JP5669518B2 - Wafer transfer mechanism - Google Patents

Wafer transfer mechanism Download PDF

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JP5669518B2
JP5669518B2 JP2010233938A JP2010233938A JP5669518B2 JP 5669518 B2 JP5669518 B2 JP 5669518B2 JP 2010233938 A JP2010233938 A JP 2010233938A JP 2010233938 A JP2010233938 A JP 2010233938A JP 5669518 B2 JP5669518 B2 JP 5669518B2
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wafer
holding
grinding
suction
pad
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JP2012089627A (en
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溝本 康隆
康隆 溝本
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Disco Corp
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Disco Corp
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Priority to TW100133630A priority patent/TWI534932B/en
Priority to KR1020110102716A priority patent/KR101757932B1/en
Priority to CN201110314510.2A priority patent/CN102456600B/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742Mechanical parts of transfer devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B25HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
    • B25JMANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
    • B25J15/00Gripping heads and other end effectors
    • B25J15/06Gripping heads and other end effectors with vacuum or magnetic holding means
    • B25J15/0616Gripping heads and other end effectors with vacuum or magnetic holding means with vacuum
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B25HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
    • B25JMANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
    • B25J15/00Gripping heads and other end effectors
    • B25J15/06Gripping heads and other end effectors with vacuum or magnetic holding means
    • B25J15/0616Gripping heads and other end effectors with vacuum or magnetic holding means with vacuum
    • B25J15/0683Details of suction cup structure, e.g. grooves or ridges
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68707Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance

Description

本発明は、半導体ウエーハ等のウエーハを保持して搬送するウエーハ搬送機構に関する。   The present invention relates to a wafer transport mechanism that holds and transports a wafer such as a semiconductor wafer.

半導体デバイス製造プロセスでは、半導体ウエーハの表面にストリートと呼ばれる複数の分割予定ラインによって区画された各領域に半導体デバイスが形成される。半導体ウエーハは研削装置によって裏面が研削されて所定の厚みに加工された後、ダイシング装置によってストリートに沿って切削することで個々のデバイスに分割され、IC、LSI等の半導体デバイスを製造する。   In a semiconductor device manufacturing process, a semiconductor device is formed in each region partitioned by a plurality of division lines called streets on the surface of a semiconductor wafer. The semiconductor wafer is ground to a predetermined thickness by a grinding device and then processed along a street by a dicing device to be divided into individual devices, thereby manufacturing semiconductor devices such as IC and LSI.

研削装置は、ウエーハを保持するチャックテーブルと、チャックテーブルに保持されたウエーハを研削する研削手段と、研削されたウエーハをチャックテーブルから搬出するウエーハ搬送機構と、搬出されたウエーハの研削面を洗浄するスピンナ洗浄ユニットとから概ね形成されていて、ウエーハを所望の厚みに加工することができる(例えば、特開2003−300155号公報参照)。   The grinding apparatus cleans the chuck table for holding the wafer, a grinding means for grinding the wafer held on the chuck table, a wafer transport mechanism for carrying the ground wafer out of the chuck table, and the ground surface of the carried wafer The wafer can be processed into a desired thickness (see, for example, JP-A-2003-300155).

ウエーハの裏面を研削する研削装置は、ウエーハを薄く研削するとともに研削後のウエーハの研削面に微細な研削屑が付着しないことが要求される。また、研削装置でウエーハの裏面を研削し、その後、ウエーハの裏面にサブデバイス(再配線層)を形成する場合があり、係る場合にはウエーハの裏面に付着する研削屑等のコンタミが基準値を下回っていなければならない。   A grinding apparatus that grinds the back surface of a wafer is required to thinly grind the wafer and to prevent fine grinding dust from adhering to the ground surface of the wafer after grinding. In some cases, the back surface of the wafer is ground with a grinding machine, and then a sub-device (rewiring layer) is formed on the back surface of the wafer. In such a case, contamination such as grinding dust adhering to the back surface of the wafer is the reference value. Must be less than

従来一般的には、研削済みのウエーハをチャックテーブルから搬出する際には、回動可能なアームの先端に取り付けられた真空吸引式の吸着パッドでウエーハを吸引し、チャックテーブルから洗浄ユニットまで搬送している。   Conventionally, when a ground wafer is unloaded from a chuck table, the wafer is sucked by a vacuum suction pad attached to the tip of a rotatable arm and transported from the chuck table to the cleaning unit. doing.

特開2003−300155号公報JP 2003-300155 A

しかし、吸着パッドを使用するウエーハ搬送装置では、研削直後のウエーハは研削面を洗浄するために洗浄ユニットに搬送されるが、ウエーハ搬送機構の吸着パッドの吸引に起因してウエーハの裏面が乾燥して、基準値を超えるコンタミがウエーハの裏面に付着し、洗浄ユニットで洗浄しても研削屑等のコンタミを取り除くのが困難であるという問題がある。   However, in a wafer transfer device that uses a suction pad, the wafer immediately after grinding is transferred to a cleaning unit to clean the ground surface, but the back surface of the wafer dries due to suction of the suction pad of the wafer transfer mechanism. Thus, there is a problem that contamination exceeding the reference value adheres to the back surface of the wafer and it is difficult to remove contamination such as grinding scraps even if the cleaning unit cleans.

本発明はこのような点に鑑みてなされたものであり、その目的とするところは、研削後のウエーハの研削面を汚染することがなく且つ研削面に研削屑が付着することのないウエーハ搬送機構を提供することである。   The present invention has been made in view of the above points, and the object of the present invention is to convey a wafer that does not contaminate the ground surface of the wafer after grinding and does not cause grinding dust to adhere to the ground surface. Is to provide a mechanism.

本発明によると、ウエーハを保持して搬送するウエーハ搬送機構であって、アームと、該アームの先端に弾性支持手段を介して支持されたウエーハを吸引保持する保持パッドとを具備し、該保持パッドは、ウエーハの外周を吸引保持する環状の吸引保持部と、該環状の吸引保持部に囲繞され吸引保持されたウエーハとの間で空間を形成する凹部と、該凹部に液体を供給する液体供給部と、該凹部から液体を排出する該環状の吸引保持部に溝状に形成された複数の排出部と、を含み、該複数の排出部はウエーハを保持した際に該凹部と該保持パッドの外部とを連通することを特徴とするウエーハ搬送機構が提供される。 According to the present invention, there is provided a wafer transport mechanism for holding and transporting a wafer, comprising: an arm; and a holding pad for sucking and holding the wafer supported by elastic support means at the tip of the arm. The pad includes an annular suction holding portion that sucks and holds the outer periphery of the wafer, a concave portion that forms a space between the annular suction holding portion and a wafer that is sucked and held, and a liquid that supplies liquid to the concave portion. a supply unit, seen including a plurality of discharge portions formed in a groove shape to the sucking and holding portion of the annular discharging the liquid from the recess, and a recess in the discharge portion of said plurality of holding the wafer the A wafer transfer mechanism is provided that communicates with the outside of the holding pad .

本発明のウエーハ搬送機構によると、研削後のウエーハの外周部を環状の吸引保持部で保持するため、ウエーハ研削面に接触する部分が少ないのに加えて、ウエーハ研削面を常に水の層で満たしながらチャックテーブルから洗浄ユニットまでウエーハを搬送するため、研削面が乾燥することがなく、基準値を超えるコンタミの付着を防止することができる。   According to the wafer conveyance mechanism of the present invention, since the outer peripheral portion of the wafer after grinding is held by the annular suction holding portion, there are few portions in contact with the wafer grinding surface, and the wafer grinding surface is always made of a water layer. Since the wafer is transported from the chuck table to the cleaning unit while filling, the ground surface does not dry, and contamination that exceeds the reference value can be prevented.

半導体ウエーハの表面側斜視図である。It is a surface side perspective view of a semiconductor wafer. 表面に保護テープを貼着した状態の半導体ウエーハの裏面側斜視図である。It is a back surface side perspective view of a semiconductor wafer in the state where a protective tape was stuck on the surface. 本発明のウエーハ搬送機構を具備した研削装置の斜視図である。It is a perspective view of the grinding device provided with the wafer conveyance mechanism of the present invention. 本発明実施形態に係るウエーハ搬送機構の斜視図である。It is a perspective view of the wafer conveyance mechanism which concerns on this invention embodiment. ウエーハ搬送機構の要部断面図である。It is principal part sectional drawing of a wafer conveyance mechanism. 保持パッドの裏面側斜視図である。It is a back surface side perspective view of a holding pad. 排出部から水が排出される状態を示す保持パッド部分の斜視図である。It is a perspective view of the holding pad part which shows the state where water is discharged from the discharge part.

以下、本発明実施形態のウエーハ搬送機構を図面を参照して詳細に説明する。図1は所定の厚さに加工される前の半導体ウエーハ11の斜視図である。図1に示す半導体ウエーハ11は、例えば厚さが700μmのシリコンウエーハから成っており、表面11aに複数のストリート(分割予定ライン)13が格子状に形成されているとともに、該複数のストリート13によって区画された複数の領域にIC、LSI等のデバイス15が形成されている。   Hereinafter, a wafer conveyance mechanism according to an embodiment of the present invention will be described in detail with reference to the drawings. FIG. 1 is a perspective view of a semiconductor wafer 11 before being processed to a predetermined thickness. The semiconductor wafer 11 shown in FIG. 1 is made of, for example, a silicon wafer having a thickness of 700 μm, and a plurality of streets (division lines) 13 are formed in a lattice shape on the surface 11a. Devices 15 such as IC and LSI are formed in a plurality of partitioned areas.

このように構成された半導体ウエーハ11は、デバイス15が形成されているデバイス領域17と、デバイス領域17を囲繞する外周余剰領域19を備えている。また、半導体ウエーハ11の外周には、シリコンウエーハの結晶方位を示すマークとしてのノッチ21が形成されている。   The semiconductor wafer 11 configured as described above includes a device region 17 in which the device 15 is formed, and an outer peripheral surplus region 19 that surrounds the device region 17. A notch 21 is formed on the outer periphery of the semiconductor wafer 11 as a mark indicating the crystal orientation of the silicon wafer.

半導体ウエーハ11の裏面11bを研削する前に、半導体ウエーハ11の表面11aには、保護テープ貼着工程により保護テープ23が貼着される。従って、半導体ウエーハ11の表面11aは、保護テープ23によって保護され、図2に示すように裏面11bが露出する形態となる。保護テープ23に替えて剛性のあるガラス等の保護部材を使用するようにしてもよい。   Before grinding the back surface 11b of the semiconductor wafer 11, the protective tape 23 is attached to the front surface 11a of the semiconductor wafer 11 by a protective tape attaching process. Therefore, the front surface 11a of the semiconductor wafer 11 is protected by the protective tape 23, and the back surface 11b is exposed as shown in FIG. Instead of the protective tape 23, a rigid protective member such as glass may be used.

次に、図3を参照して、本発明実施形態のウエーハ搬送機構を採用した研削装置について説明する。4は研削装置2のベースであり、ベースの後方には二つのコラム6a,6bが垂直に立設されている。コラム6aには、上下方向に延びる一対のガイドレール(一本のみ図示)8が固定されている。   Next, with reference to FIG. 3, a grinding apparatus that employs the wafer conveyance mechanism of the embodiment of the present invention will be described. Reference numeral 4 denotes a base of the grinding apparatus 2, and two columns 6a and 6b are provided upright at the rear of the base. A pair of guide rails (only one is shown) 8 extending in the vertical direction is fixed to the column 6a.

この一対のガイドレール8に沿って粗研削ユニット10が上下方向に移動可能に装着されている。粗研削ユニット10は、そのハウジング20が一対のガイドレール8に沿って上下方向に移動する移動基台12に取り付けられている。   A rough grinding unit 10 is mounted along the pair of guide rails 8 so as to be movable in the vertical direction. The rough grinding unit 10 is attached to a moving base 12 whose housing 20 moves up and down along a pair of guide rails 8.

粗研削ユニット10は、ハウジング20と、ハウジング20中に回転可能に収容された図示しないスピンドルと、スピンドルを回転駆動するサーボモータ22と、スピンドルの先端に固定された複数の粗研削用の研削砥石26を有する研削ホイール24を含んでいる。   The rough grinding unit 10 includes a housing 20, a spindle (not shown) rotatably accommodated in the housing 20, a servo motor 22 that rotationally drives the spindle, and a plurality of rough grinding grinding wheels fixed to the tip of the spindle. A grinding wheel 24 having 26 is included.

粗研削ユニット10は、粗研削ユニット10を一対の案内レール8に沿って上下方向に移動するボールねじ14とパルスモータ16とから構成される粗研削ユニット移動機構18を備えている。パルスモータ16をパルス駆動すると、ボールねじ14が回転し、移動基台12が上下方向に移動される。   The rough grinding unit 10 includes a rough grinding unit moving mechanism 18 including a ball screw 14 and a pulse motor 16 that move the rough grinding unit 10 up and down along a pair of guide rails 8. When the pulse motor 16 is pulse-driven, the ball screw 14 rotates and the moving base 12 is moved in the vertical direction.

他方のコラム6bにも、上下方向に伸びる一対のガイドレール(一本のみ図示)19が固定されている。この一対のガイドレール19に沿って仕上げ研削ユニット28が上下方向に移動可能に装着されている。   A pair of guide rails 19 (only one is shown) 19 extending in the vertical direction are also fixed to the other column 6b. A finish grinding unit 28 is mounted along the pair of guide rails 19 so as to be movable in the vertical direction.

仕上げ研削ユニット28は、そのハウジング36が一対のガイドレール19に沿って上下方向に移動する図示しない移動基台に取り付けられている。仕上げ研削ユニット28は、ハウジング36と、ハウジング36中に回転可能に収容された図示しないスピンドルと、スピンドルを回転駆動するサーボモータ38と、スピンドルの先端に固定された仕上げ研削用の研削砥石42を有する研削ホイール40を含んでいる。   The finish grinding unit 28 is attached to a moving base (not shown) in which the housing 36 moves in the vertical direction along the pair of guide rails 19. The finish grinding unit 28 includes a housing 36, a spindle (not shown) rotatably accommodated in the housing 36, a servo motor 38 that rotationally drives the spindle, and a grinding wheel 42 for finish grinding fixed to the tip of the spindle. A grinding wheel 40 is included.

仕上げ研削ユニット28は、仕上げ研削ユニット28を一対の案内レール19に沿って上下方向に移動するボールねじ30とパルスモータ32とから構成される仕上げ研削ユニット移動機構34を備えている。パルスモータ32を駆動すると、ボールねじ30が回転し、仕上げ研削ユニット28が上下方向に移動される。   The finish grinding unit 28 includes a finish grinding unit moving mechanism 34 including a ball screw 30 and a pulse motor 32 that move the finish grinding unit 28 in the vertical direction along the pair of guide rails 19. When the pulse motor 32 is driven, the ball screw 30 rotates and the finish grinding unit 28 is moved in the vertical direction.

研削装置2は、コラム6a,6bの前側においてベース4の上面と略面一となるように配設されたターンテーブル44を具備している。ターンテーブル44は比較的大径の円盤状に形成されており、図示しない回転駆動機構によって矢印45で示す方向に回転される。   The grinding device 2 includes a turntable 44 disposed so as to be substantially flush with the upper surface of the base 4 on the front side of the columns 6a and 6b. The turntable 44 is formed in a relatively large-diameter disk shape, and is rotated in a direction indicated by an arrow 45 by a rotation drive mechanism (not shown).

ターンテーブル44には、互いに円周方向に120°離間して3個のチャックテーブル46が水平面内で回転可能に配置されている。チャックテーブル46は、ポーラスセラミック材によって円盤状に形成された吸着部を有しており、吸着部の保持面上に載置されたウエーハを真空吸引手段を作動することにより吸引保持する。   On the turntable 44, three chuck tables 46 are arranged so as to be rotatable in a horizontal plane, spaced from each other by 120 ° in the circumferential direction. The chuck table 46 has a suction part formed in a disk shape by a porous ceramic material, and sucks and holds the wafer placed on the holding surface of the suction part by operating a vacuum suction means.

ターンテーブル44に配設された3個のチャックテーブル46は、ターンテーブル44が適宜回転することにより、ウエーハ搬入・搬出領域A、粗研削加工領域B、仕上げ研削加工領域C、及びウエーハ搬入・搬出領域Aに順次移動される。   The three chuck tables 46 arranged on the turntable 44 are rotated in accordance with the turntable 44, so that the wafer loading / unloading area A, rough grinding area B, finish grinding area C, and wafer loading / unloading are performed. The region A is sequentially moved.

ベース4の前側部分には、第1のウエーハカセット50と、第2のウエーハカセット66と、リンク機構51とハンド52とを有するウエーハ搬送ロボット54と、複数の位置決めピン58を有する位置決めテーブル56と、ウエーハ搬入機構(ローディングアーム)60と、ウエーハ搬出機構(アンローディングアーム)62と、スピンナ洗浄ユニット64が配設されている。   A front portion of the base 4 includes a first wafer cassette 50, a second wafer cassette 66, a wafer transfer robot 54 having a link mechanism 51 and a hand 52, and a positioning table 56 having a plurality of positioning pins 58. A wafer carry-in mechanism (loading arm) 60, a wafer carry-out mechanism (unloading arm) 62, and a spinner cleaning unit 64 are disposed.

スピンナ洗浄ユニット64は、ウエーハを吸引保持して回転するスピンナテーブル68を有している。70はスピンナ洗浄ユニット64のカバーである。ウエーハ搬出機構62が本発明実施形態のウエーハ搬送機構を構成する。   The spinner cleaning unit 64 has a spinner table 68 that rotates while sucking and holding the wafer. Reference numeral 70 denotes a cover of the spinner cleaning unit 64. The wafer carry-out mechanism 62 constitutes the wafer conveyance mechanism of the embodiment of the present invention.

研削後のウエーハ11は、研削面を洗浄するためスピンナ洗浄ユニット64に搬送されるが、ウエーハの研削面を吸着パッドで吸着して搬送すると、吸着パッドがウエーハの研削面に接触するため研削面の汚染が懸念される。   The ground wafer 11 is transported to the spinner cleaning unit 64 to clean the ground surface. However, when the ground surface of the wafer is sucked and transported by the suction pad, the ground surface is brought into contact with the ground surface of the wafer. There is concern about contamination.

更に、ウエーハ搬送時に吸着パッドの吸引に起因してウエーハの裏面が乾燥し、研削屑がウエーハの研削面に固着してスピンナ洗浄ユニット64で洗浄しても落ちないという問題が発生していた。この問題を解決する本発明実施形態のウエーハ搬送機構62を図4乃至図7を参照して詳細に説明する。   Further, there has been a problem that the back surface of the wafer dries due to suction of the suction pad during wafer transport, and the grinding dust adheres to the ground surface of the wafer and does not fall off even when cleaned by the spinner cleaning unit 64. A wafer transport mechanism 62 according to an embodiment of the present invention that solves this problem will be described in detail with reference to FIGS.

ウエーハ搬送機構62は、図4に示すように、上下方向に移動可能なコラム72と、コラム72の先端部に回動可能に装着されたアーム74と、アーム74の先端部に取り付けられた保持パッド(吸着パッド)76とを含んでいる。   As shown in FIG. 4, the wafer transfer mechanism 62 includes a column 72 that is movable in the vertical direction, an arm 74 that is rotatably attached to the distal end portion of the column 72, and a holding member that is attached to the distal end portion of the arm 74. A pad (suction pad) 76.

図5に示すように、アーム74の先端部には挿入穴75が形成されており、この挿入穴75中に保持パッド76の支持部78を挿入し、保持パッド76とアーム74との間にコイルばね80を介装することにより、保持パッド76はアーム74の先端に弾性的に支持される。   As shown in FIG. 5, an insertion hole 75 is formed at the distal end portion of the arm 74, and a support portion 78 of the holding pad 76 is inserted into the insertion hole 75, and the holding pad 76 and the arm 74 are interposed between them. By holding the coil spring 80, the holding pad 76 is elastically supported at the tip of the arm 74.

図6に最もよく示されるように、保持パッド76は、ウエーハ11の外周を吸引保持する環状の吸引保持部82と、環状の吸引保持部82に囲繞された、ウエーハ11との間で空間を形成する円形凹部84を有している。そして、吸引保持部82と円形凹部84との段差hは1〜2mm程度に形成される。   As best shown in FIG. 6, the holding pad 76 forms a space between the annular suction holding portion 82 for sucking and holding the outer periphery of the wafer 11 and the wafer 11 surrounded by the annular suction holding portion 82. A circular recess 84 is formed. And the level | step difference h of the suction holding | maintenance part 82 and the circular recessed part 84 is formed about 1-2 mm.

環状の吸引保持部82には複数の吸引孔86が形成されており、図5に示すように、これらの吸引孔86は環状吸引路88及び吸引口90を介して吸引源92に接続されている。環状の吸引保持部82には更に、複数の(本実施形態では4個)排出部94が形成されている。   A plurality of suction holes 86 are formed in the annular suction holding portion 82, and as shown in FIG. 5, these suction holes 86 are connected to a suction source 92 through an annular suction path 88 and a suction port 90. Yes. The annular suction holding portion 82 is further formed with a plurality of (four in the present embodiment) discharge portions 94.

円形凹部84には、円形凹部84に水を供給する複数の(本実施形態では4個)供給穴96が形成されており、これらの供給穴96は保持パッド76の表面に配設されたフレキシブルな配管98を介して図5に示すように水源100に接続されている。   A plurality of (four in this embodiment) supply holes 96 for supplying water to the circular recesses 84 are formed in the circular recess 84, and these supply holes 96 are flexible on the surface of the holding pad 76. As shown in FIG. 5, it is connected to the water source 100 through a simple pipe 98.

以下、上述したように構成された本発明実施形態のウエーハ搬送機構(ウエーハ搬出機構)62の作用について説明する。粗研削ユニット10による粗研削及び仕上げ研削ユニット28による仕上げ研削の終了したウエーハ11は、ターンテーブル44を回転してウエーハ搬入・搬出領域Aに位置づけられる。   Hereinafter, the operation of the wafer conveyance mechanism (wafer carry-out mechanism) 62 of the embodiment of the present invention configured as described above will be described. The wafer 11 that has been subjected to the rough grinding by the rough grinding unit 10 and the finish grinding by the finish grinding unit 28 is positioned in the wafer carry-in / out area A by rotating the turntable 44.

次いで、ウエーハ搬送機構62のアーム74が回動されて保持パッド76がチャックテーブル46に保持されたウエーハ11の上に位置づけられ、コラム72を下降させて保持パッド76をウエーハ11の裏面(研削面)11bに当接させる。   Next, the arm 74 of the wafer transport mechanism 62 is rotated so that the holding pad 76 is positioned on the wafer 11 held on the chuck table 46, and the column 72 is lowered to place the holding pad 76 on the back surface (grinding surface) of the wafer 11. ) It is brought into contact with 11b.

そして、チャックテーブル46の吸引保持を解除してから、保持パッド76の環状の吸引保持部82でウエーハ11の外周部を吸引保持する。よって、ウエーハ11の研削面と保持パッド76との間には円形凹部84により空間が形成され、ウエーハ11はその外周部でのみ保持パッド76により吸引保持される。   After the suction holding of the chuck table 46 is released, the outer peripheral portion of the wafer 11 is sucked and held by the annular suction holding portion 82 of the holding pad 76. Therefore, a space is formed by the circular recess 84 between the ground surface of the wafer 11 and the holding pad 76, and the wafer 11 is sucked and held by the holding pad 76 only at the outer peripheral portion thereof.

円形凹部84内には水源100に接続された供給穴96から水が供給されてウエーハ11を吸引保持した円形凹部84内は水で満たされ、図7に示すように環状の吸引保持部82に形成された排出部94から排水102が排出される。   Water is supplied from a supply hole 96 connected to the water source 100 into the circular concave portion 84, and the circular concave portion 84 that sucks and holds the wafer 11 is filled with water. As shown in FIG. The drainage 102 is discharged from the formed discharge portion 94.

この状態でコラム72を所定距離上方に移動してウエーハ11をチャックテーブル46から上昇させ、更にアーム74を回動することにより保持パッド76でウエーハ11を吸引保持した状態でスピンナ洗浄ユニット64のスピンナテーブル68までウエーハ11を搬送し、保持パッド76の環状の吸引保持部82の吸引を解除する。   In this state, the column 72 is moved upward by a predetermined distance, the wafer 11 is lifted from the chuck table 46, and the arm 74 is further rotated so that the wafer 11 is sucked and held by the holding pad 76. The wafer 11 is conveyed to the table 68 and the suction of the annular suction holding portion 82 of the holding pad 76 is released.

スピンナ洗浄ユニット64では、スピンナテーブル68でウエーハ11を吸引保持し、スピンナテーブル68を回転しながらウエーハ11を洗浄する。ウエーハ11の洗浄が終了すると、スピンナ洗浄ユニット64でウエーハ11をスピン乾燥した後、ウエーハ搬送ロボット54のハンド52でウエーハ11を吸引保持して第2のウエーハカセット62の所定箇所にウエーハ11を収容する。   In the spinner cleaning unit 64, the wafer 11 is sucked and held by the spinner table 68, and the wafer 11 is cleaned while rotating the spinner table 68. When the cleaning of the wafer 11 is completed, the wafer 11 is spin-dried by the spinner cleaning unit 64, and then the wafer 11 is sucked and held by the hand 52 of the wafer transfer robot 54, and the wafer 11 is accommodated in a predetermined position of the second wafer cassette 62. To do.

上述した実施形態のウエーハ搬送機構62によると、研削後のウエーハ11の外周部を環状の吸引保持部82で保持しながら搬送するため、ウエーハ研削面に接触する部分が少ないのに加えて、ウエーハ11の研削面に常に水の層を形成しながら搬送するため、ウエーハ11の研削面が乾燥することがなく、研削屑等によるコンタミのウエーハ研削面の汚染を徹底的に防止して、ウエーハをチャックテーブル46から洗浄ユニット64まで搬送することができる。   According to the wafer transport mechanism 62 of the above-described embodiment, since the outer peripheral portion of the wafer 11 after grinding is transported while being held by the annular suction holding portion 82, the wafer contact surface is less in contact with the wafer grinding surface. Since the wafer 11 is transported while always forming a layer of water on the ground surface, the ground surface of the wafer 11 is not dried, and contamination of the contaminated wafer ground surface by grinding debris and the like is thoroughly prevented. It can be conveyed from the chuck table 46 to the cleaning unit 64.

2 研削装置
10 粗研削ユニット
11 半導体ウエーハ
23 保護テープ
28 仕上げ研削ユニット
44 ターンテーブル
46 チャックテーブル
62 ウエーハ搬送機構(ウエーハ搬出機構)
64 スピンナ洗浄ユニット
76 保持パッド
82 環状の吸引保持部
84 円形凹部
86 吸引孔
94 排出部
96 供給穴
2 Grinding device 10 Rough grinding unit 11 Semiconductor wafer 23 Protective tape 28 Finish grinding unit 44 Turntable 46 Chuck table 62 Wafer transport mechanism (wafer carry-out mechanism)
64 Spinner cleaning unit 76 Holding pad 82 Annular suction holding part 84 Circular recess 86 Suction hole 94 Discharge part 96 Supply hole

Claims (1)

ウエーハを保持して搬送するウエーハ搬送機構であって、
アームと、
該アームの先端に弾性支持手段を介して支持されたウエーハを吸引保持する保持パッドとを具備し、
該保持パッドは、ウエーハの外周を吸引保持する環状の吸引保持部と、該環状の吸引保持部に囲繞され吸引保持されたウエーハとの間で空間を形成する凹部と、該凹部に液体を供給する液体供給部と、該凹部から液体を排出する該環状の吸引保持部に溝状に形成された複数の排出部と、を含み、
該複数の排出部はウエーハを保持した際に該凹部と該保持パッドの外部とを連通することを特徴とするウエーハ搬送機構。
A wafer transfer mechanism for holding and transferring a wafer,
Arm,
A holding pad for sucking and holding a wafer supported by elastic support means at the tip of the arm;
The holding pad is configured to suck and hold the outer periphery of the wafer, a concave portion forming a space between the annular suction holding portion and the wafer held and sucked, and supply liquid to the concave portion. a liquid supply portion that, viewed contains a plurality of discharge portions formed in a groove shape to the sucking and holding portion of the annular discharging the liquid from the recess, and
The wafer discharge mechanism , wherein the plurality of discharge portions communicate the recess and the outside of the holding pad when holding the wafer.
JP2010233938A 2010-10-18 2010-10-18 Wafer transfer mechanism Active JP5669518B2 (en)

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KR1020110102716A KR101757932B1 (en) 2010-10-18 2011-10-07 Wafer transfer mechanism
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JP7320940B2 (en) * 2018-12-17 2023-08-04 株式会社東京精密 Wafer holding device and wafer carrier holding device
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