JPWO2014087761A1 - Substrate processing mechanism and small manufacturing apparatus using the same - Google Patents

Substrate processing mechanism and small manufacturing apparatus using the same Download PDF

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JPWO2014087761A1
JPWO2014087761A1 JP2014550988A JP2014550988A JPWO2014087761A1 JP WO2014087761 A1 JPWO2014087761 A1 JP WO2014087761A1 JP 2014550988 A JP2014550988 A JP 2014550988A JP 2014550988 A JP2014550988 A JP 2014550988A JP WO2014087761 A1 JPWO2014087761 A1 JP WO2014087761A1
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cleaning liquid
substrate
nozzle
processing
semiconductor wafer
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JP6382110B2 (en
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義久 扇子
義久 扇子
史朗 原
史朗 原
ソマワン クンプアン
ソマワン クンプアン
翔 武内
翔 武内
土井　幹夫
幹夫 土井
成雄 荒崎
成雄 荒崎
幸弘 杉山
幸弘 杉山
晃一 服部
晃一 服部
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PULSA CO., LTD.
National Institute of Advanced Industrial Science and Technology AIST
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PULSA CO., LTD.
National Institute of Advanced Industrial Science and Technology AIST
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

Abstract

【課題】小型の処理基板であっても回転テーブルとの間に洗浄液が浸入し難く、且つ、洗浄後に処理基板の裏面を確実に乾燥させることができる基板処理機構及びこれを用いた小型製造装置を提供する。【解決手段】洗浄液ノズルに、回転軸の載置面を囲むように、環状のノズル口を形成する。そして、洗浄液の液面をノズル口から隆起させて、半導体ウェハの裏側露出面に接触させ、この洗浄液の表面張力によって裏側露出面に略環状に付着させる。付着した洗浄液は、半導体ウェハの回転によって遠心力を与えられて外側に移動して、この半導体ウェハの外周縁に付着したフォトレジスト液を洗い流す。その後、回転軸を上昇させて、裏側露出面に付着した洗浄液をノズル口から引き離し、半導体ウェハの回転によって洗浄液を飛散させる。これにより、半導体ウェハの裏側露出面を簡単に乾燥させることができる。A substrate processing mechanism capable of preventing a cleaning liquid from entering a rotary table even if it is a small processing substrate, and capable of reliably drying the back surface of the processing substrate after cleaning, and a small manufacturing apparatus using the same. I will provide a. An annular nozzle port is formed in a cleaning liquid nozzle so as to surround a mounting surface of a rotating shaft. Then, the liquid surface of the cleaning liquid is raised from the nozzle opening, is brought into contact with the exposed back surface of the semiconductor wafer, and is attached to the back exposed surface in a substantially annular shape by the surface tension of the cleaning liquid. The attached cleaning solution is moved to the outside by being subjected to centrifugal force by the rotation of the semiconductor wafer, and the photoresist solution adhering to the outer peripheral edge of the semiconductor wafer is washed away. Thereafter, the rotating shaft is raised, the cleaning liquid adhering to the exposed back surface is pulled away from the nozzle port, and the cleaning liquid is scattered by the rotation of the semiconductor wafer. Thereby, the back side exposed surface of the semiconductor wafer can be easily dried.

Description

本発明は、処理基板の裏面を洗浄する機構を有する基板処理機構と、この機構を備えた小型製造装置とに関する。本発明は、例えば小径の半導体ウェハを用いた半導体製造プロセスで使用されるレジスト塗布装置や現像装置等に適用することができる。   The present invention relates to a substrate processing mechanism having a mechanism for cleaning the back surface of a processing substrate, and a small-sized manufacturing apparatus including the mechanism. The present invention can be applied to, for example, a resist coating apparatus and a developing apparatus used in a semiconductor manufacturing process using a small-diameter semiconductor wafer.

従来の基板処理機構について、半導体製造プロセス用のレジスト塗布装置を例に採って説明する。   A conventional substrate processing mechanism will be described taking a resist coating apparatus for a semiconductor manufacturing process as an example.

従来のレジスト塗布装置として、スピンコート法を用いたものが知られている（例えば下記特許文献１参照）。特許文献１のレジスト塗布装置（例えば図１参照）では、半導体ウェハを回転テーブル１８に真空チャック等で固定して、この回転テーブル１８を回転させながらレジストノズル１２からレジスト液を滴下する。これにより、遠心力によってレジスト液が拡がり、この半導体ウェハ上に略均一な厚さのレジスト膜が形成される。   As a conventional resist coating apparatus, one using a spin coating method is known (for example, see Patent Document 1 below). In the resist coating apparatus of Patent Document 1 (see, for example, FIG. 1), a semiconductor wafer is fixed to a rotary table 18 with a vacuum chuck or the like, and a resist solution is dropped from the resist nozzle 12 while rotating the rotary table 18. As a result, the resist solution spreads by centrifugal force, and a resist film having a substantially uniform thickness is formed on the semiconductor wafer.

この際、半導体ウェハの周縁部から裏側にレジスト膜が回り込んで付着すると、パーティクルが発生して、半導体デバイスの歩留まり低下や性能不良を招く原因となる。このため、特許文献１のレジスト塗布装置では、針状の洗浄用溶剤ノズル２４から洗浄液を所定圧で吹き付けて裏面上で拡げることにより、半導体ウェハの裏面を洗浄している（特許文献１の段落［００１４］等参照）。   At this time, if the resist film wraps around and adheres to the back side from the peripheral edge of the semiconductor wafer, particles are generated, which causes a decrease in yield of the semiconductor device and a performance defect. For this reason, in the resist coating apparatus of Patent Document 1, the back surface of the semiconductor wafer is cleaned by spraying a cleaning liquid from the needle-shaped cleaning solvent nozzle 24 at a predetermined pressure and spreading it on the back surface (paragraph of Patent Document 1). [0014] etc.).

特開平８−３１７２２号公報JP-A-8-31722

近年、半導体デバイスの多品種少量生産に対する要望が高まっている。また、研究開発等において半導体デバイスを試作する場合には、半導体デバイスを１個或いは数個単位で製造することが望まれる。   In recent years, there has been an increasing demand for high-mix low-volume production of semiconductor devices. In addition, when a semiconductor device is prototyped in research and development, it is desired to manufacture one or several semiconductor devices.

更に、大規模な工場で同一品種の製品を大量に製造する場合、市場の需要変動に合わせて生産量を調整することが非常に困難となる。少量の生産では、工場の運営コストに見合う利益を確保できないからである。   Furthermore, when a large-scale factory manufactures a large number of products of the same product type, it is very difficult to adjust the production volume according to market demand fluctuations. This is because a small amount of production cannot secure a profit commensurate with the operating cost of the factory.

加えて、半導体製造工場は、高額の建設投資や運営費用が必要であるため、中小企業が参入し難いという欠点もある。   In addition, the semiconductor manufacturing plant requires a large amount of construction investment and operation costs, so that it is difficult for SMEs to enter.

以上のような理由から、小規模な製造工場等で、小径の半導体ウェハや小型の製造装置を用いて、半導体デバイスの多品種少量生産を安価に行う技術が望まれる。   For the above reasons, there is a demand for a technology that enables low-cost production of a large variety of semiconductor devices using a small-sized semiconductor wafer or a small manufacturing apparatus in a small-scale manufacturing factory or the like.

しかしながら、上述のような従来のレジスト塗布装置を小口径ウェハに使用する場合、回転テーブルの周縁部と半導体ウェハの周縁部との距離が非常に短くなる。このため、小口径ウェハの裏面洗浄工程では、以下のような問題が生じることがわかった。   However, when the conventional resist coating apparatus as described above is used for a small-diameter wafer, the distance between the peripheral portion of the rotary table and the peripheral portion of the semiconductor wafer becomes very short. For this reason, it turned out that the following problems arise in the back surface cleaning process of a small diameter wafer.

洗浄用溶剤ノズルを用いて半導体ウェハの裏面に洗浄液を吹き付けて拡げる場合、この洗浄液が半導体ウェハの裏面で内側に流動して、半導体ウェハと回転テーブルとの間に浸入してしまうおそれがある。このような洗浄液の浸入は、半導体ウェハの口径が小さくなるほど（従って、回転テーブルの周縁部と半導体ウェハの周縁部との距離が短くなるほど）、顕著となる。そして、半導体ウェハと回転テーブルとの間に洗浄液が浸入すると、洗浄工程後に半導体ウェハの裏面に洗浄液が残ってしまい、デバイスの歩留まり低下や性能不良の原因となる。また、半導体ウェハが洗浄液で回転テーブルに吸着されてしまい、レジスト塗布工程後に半導体ウェハの搬送不良を引き起こすおそれがある。更には、回転テーブルに洗浄液が付着するために、レジスト塗布装置が故障しやすくなる。   When the cleaning liquid is sprayed and spread on the back surface of the semiconductor wafer using the cleaning solvent nozzle, the cleaning liquid may flow inward on the back surface of the semiconductor wafer and enter between the semiconductor wafer and the turntable. Such infiltration of the cleaning liquid becomes more prominent as the diameter of the semiconductor wafer becomes smaller (thus, the shorter the distance between the peripheral edge of the rotary table and the peripheral edge of the semiconductor wafer). If the cleaning liquid enters between the semiconductor wafer and the turntable, the cleaning liquid remains on the back surface of the semiconductor wafer after the cleaning process, which causes a reduction in device yield and poor performance. Further, the semiconductor wafer is attracted to the rotary table by the cleaning liquid, and there is a risk of causing a semiconductor wafer conveyance failure after the resist coating process. Furthermore, since the cleaning liquid adheres to the rotary table, the resist coating apparatus is liable to fail.

このような欠点を解消する方法としては、回転テーブルを小さくして該回転テーブルの周縁部と半導体ウェハの周縁部との距離を長くする方法や、洗浄用溶剤ノズルの径を小さくして、洗浄液の噴射径を小さくする方法も考えられる。しかしながら、回転テーブルや洗浄用溶剤ノズルを小型化しても、上記課題を解決することは困難である。   As a method for solving such a drawback, there are a method of reducing the size of the rotary table to increase the distance between the peripheral portion of the rotary table and the peripheral portion of the semiconductor wafer, and a method of reducing the diameter of the cleaning solvent nozzle to reduce the cleaning liquid. A method of reducing the jet diameter of the nozzle is also conceivable. However, even if the rotary table and the cleaning solvent nozzle are downsized, it is difficult to solve the above problems.

また、デバイスの歩留まり低下や性能不良等の上記課題を解決するためには、洗浄工程後に、半導体ウェハの裏面に残留した洗浄液を完全に除去する必要がある。   Further, in order to solve the above-mentioned problems such as device yield reduction and poor performance, it is necessary to completely remove the cleaning liquid remaining on the back surface of the semiconductor wafer after the cleaning process.

このような問題は、半導体製造装置だけで無く、例えばサファイア基板やアルミニウム基板等に処理を施して電子デバイスを製造する装置や、光学デバイスを製造する装置等にも生じる。   Such a problem occurs not only in a semiconductor manufacturing apparatus but also in an apparatus for manufacturing an electronic device by processing a sapphire substrate, an aluminum substrate, or the like, an apparatus for manufacturing an optical device, or the like.

本発明の目的は、小型の処理基板であっても回転テーブルとの間に洗浄液が浸入し難く、且つ、洗浄後に処理基板の裏面を確実に乾燥させることができる基板処理機構及びこれを用いた小型製造装置を提供することにある。   An object of the present invention is to use a substrate processing mechanism that can prevent a cleaning liquid from entering a rotary table even with a small processing substrate and can reliably dry the back surface of the processing substrate after cleaning. It is to provide a small manufacturing apparatus.

かかる目的を達成するために、本発明の第１の観点に係る基板処理機構は、載置台に載置された処理基板の裏側露出面に洗浄液を供給するための洗浄液ノズルを有する基板処理機構であって、前記洗浄液ノズルは、前記載置台の載置面を囲むように環状に形成されたノズル口を有し、前記洗浄液の液面を前記ノズル口から隆起させて、前記処理基板の裏側露出面に接触させ、該洗浄液の表面張力によって該裏側露出面に略環状に付着させることを特徴とする。   In order to achieve such an object, a substrate processing mechanism according to a first aspect of the present invention is a substrate processing mechanism having a cleaning liquid nozzle for supplying a cleaning liquid to a backside exposed surface of a processing substrate placed on a mounting table. The cleaning liquid nozzle has a nozzle port formed in an annular shape so as to surround the mounting surface of the mounting table, and the back surface of the processing substrate is exposed by raising the cleaning liquid level from the nozzle port. It is made to contact a surface and it adheres to this back side exposed surface substantially cyclically by the surface tension of this cleaning liquid.

本発明の第１の観点に係る基板処理機構においては、前記載置台に前記処理基板を保持させて回転させることにより、該回転の遠心力で、前記裏側露出面に付着した前記洗浄液を、該処理基板の外周縁方向に流動させることが望ましい。   In the substrate processing mechanism according to the first aspect of the present invention, the cleaning liquid adhering to the back side exposed surface by the centrifugal force of the rotation by holding the processing substrate on the mounting table and rotating it, It is desirable to flow in the direction of the outer periphery of the processing substrate.

本発明の第１の観点に係る基板処理機構において、前記洗浄液ノズルは、前記載置台の外周を囲むように設けられた外筒部材と、該外筒部材の上端部付近に設けられた環状液路と、該環状液路の上側に設けられて、該環状液路から供給された前記洗浄液を隆起させる前記ノズル口とを備えることが望ましい。   In the substrate processing mechanism according to the first aspect of the present invention, the cleaning liquid nozzle includes an outer cylinder member provided so as to surround the outer periphery of the mounting table, and an annular liquid provided in the vicinity of the upper end portion of the outer cylinder member. It is desirable to include a passage and the nozzle port provided on the upper side of the annular liquid passage for raising the cleaning liquid supplied from the annular liquid passage.

本発明の第１の観点に係る基板処理機構において、前記ノズル口の前記開口は、断面が上方向に拡幅した逆テーパ状に形成されることが望ましい。   In the substrate processing mechanism according to the first aspect of the present invention, it is desirable that the opening of the nozzle port is formed in a reverse taper shape whose cross section is widened upward.

本発明の第１の観点に係る基板処理機構において、前記ノズル口の前記開口は、前記処理基板の中心側で高く且つ外縁側で低くなるように形成されていることが望ましい。   In the substrate processing mechanism according to the first aspect of the present invention, it is desirable that the opening of the nozzle port is formed so as to be higher on the center side of the processing substrate and lower on the outer edge side.

本発明の第１の観点に係る基板処理機構において、該裏面洗浄部による洗浄の後で、前記ノズル口と前記処理基板との距離を遠ざけることにより、該処理基板の前記裏側露出面に付着した前記洗浄液を前記ノズル口から引き離し、前記裏側露出面に付着した前記洗浄液が前記ノズル口から引き離された後で、前記載置台を回転させることにより、該回転の遠心力で、前記裏側露出面に付着した前記洗浄液を飛散させることが望ましい。   In the substrate processing mechanism according to the first aspect of the present invention, after cleaning by the back surface cleaning unit, the distance between the nozzle port and the processing substrate is increased to adhere to the back side exposed surface of the processing substrate. The cleaning liquid is pulled away from the nozzle port, and after the cleaning liquid adhering to the backside exposed surface is pulled away from the nozzle port, by rotating the mounting table, the centrifugal force of the rotation causes the backside exposed surface to move to the backside exposed surface. It is desirable to disperse the adhering cleaning liquid.

本発明の第１の観点に係る基板処理機構において、前記載置台を上昇させることにより、前記ノズル口と前記処理基板との距離を遠ざけることが望ましい。   In the substrate processing mechanism according to the first aspect of the present invention, it is desirable to increase the distance between the nozzle opening and the processing substrate by raising the mounting table.

本発明の第１の観点に係る基板処理機構においては、前記処理基板が、径が２０ｍｍ以下であることが望ましい。   In the substrate processing mechanism according to the first aspect of the present invention, it is desirable that the processing substrate has a diameter of 20 mm or less.

本発明の第１の観点に係る小型製造装置は、上記本発明の第１の観点の基板処理機構を備えることを特徴とする。   A small-sized manufacturing apparatus according to a first aspect of the present invention includes the substrate processing mechanism according to the first aspect of the present invention.

また、上記目的を達成するために、本発明の第２の観点に係る基板処理機構は、載置台の載置面に処理基板を保持させた状態で、処理液ノズルから該処理基板の表面に処理液を供給する処理液供給部と、ノズル口から洗浄液の液面を隆起させて、前記処理基板の裏側露出面に接触させ、該洗浄液の表面張力によって該裏側露出面に付着させる洗浄液ノズルを有する裏面洗浄部とを備える基板処理機構であって、該裏面洗浄部による洗浄の後で、前記ノズル口と前記処理基板との距離を遠ざけることにより、該処理基板の前記裏側露出面に付着した前記洗浄液を前記ノズル口から引き離す昇降部と、前記裏側露出面に付着した前記洗浄液が前記ノズル口から引き離された後で、前記載置台を回転させることにより、該回転の遠心力で、前記裏側露出面に付着した前記洗浄液を飛散させる載置台回転部とを更に備えることを特徴とする。   In order to achieve the above object, the substrate processing mechanism according to the second aspect of the present invention is configured so that the processing substrate is held on the mounting surface of the mounting table from the processing liquid nozzle to the surface of the processing substrate. A treatment liquid supply unit configured to supply a treatment liquid; and a cleaning liquid nozzle that protrudes from the nozzle port to contact the backside exposed surface of the processing substrate and adheres to the backside exposed surface by the surface tension of the cleaning liquid. A backside cleaning unit having a backside cleaning unit, and after the cleaning by the backside cleaning unit, the distance between the nozzle opening and the processing substrate is increased to adhere to the backside exposed surface of the processing substrate. An elevating unit for separating the cleaning liquid from the nozzle port, and the cleaning liquid adhering to the back-side exposed surface is separated from the nozzle port, and then rotating the mounting table, the centrifugal force of the rotation causes the back side to rotate. And further comprising a table rotating part is scattered the cleaning liquid adhering to the exit face.

本発明の第２の観点に係る基板処理機構においては、前記載置台の外周を囲むように外筒部材が設けられ、該外筒部材の上側に前記洗浄液ノズルが設けられ、前記載置台を上昇させることにより、前記ノズル口と前記処理基板との距離を遠ざけることが望ましい。   In the substrate processing mechanism according to the second aspect of the present invention, an outer cylinder member is provided so as to surround the outer periphery of the mounting table, the cleaning liquid nozzle is provided above the outer cylinder member, and the mounting table is raised. It is desirable to increase the distance between the nozzle opening and the processing substrate.

本発明の第２の観点に係る基板処理機構においては、前記処理基板が、径が２０ｍｍ以下であることが望ましい。   In the substrate processing mechanism according to the second aspect of the present invention, the processing substrate preferably has a diameter of 20 mm or less.

本発明の第２の観点に係る小型製造装置は、上記本発明の第２の観点の基板処理機構を備えることを特徴とする。   A small-sized manufacturing apparatus according to a second aspect of the present invention includes the substrate processing mechanism according to the second aspect of the present invention.

本発明の第１の観点に係る基板処理機構では、環状のノズル口から洗浄液を隆起させて、処理基板の裏側露出面に、表面張力で付着させることができる。従って、従来のように針状の洗浄液ノズルから処理基板に洗浄液を吹き付けて裏面上で拡げる場合と異なり、洗浄液が内側に流動して該処理基板と載置台との間に浸入することが無い。従って、本発明の第１の観点によれば、洗浄液の残留に起因する歩留まり低下、デバイス性能の低下、搬送不良、装置の故障等を防止することができる。   In the substrate processing mechanism according to the first aspect of the present invention, the cleaning liquid can be raised from the annular nozzle port and can be attached to the exposed back surface of the processing substrate by surface tension. Therefore, unlike the conventional case where the cleaning liquid is sprayed from the needle-shaped cleaning liquid nozzle onto the processing substrate and spread on the back surface, the cleaning liquid does not flow inward and enter between the processing substrate and the mounting table. Therefore, according to the first aspect of the present invention, it is possible to prevent a decrease in yield, a decrease in device performance, a conveyance failure, an apparatus failure, and the like due to the remaining cleaning liquid.

また、本発明の第１の観点に係る基板処理機構において、載置台の回転による遠心力で処理基板の外縁部方向に洗浄剤を流動させることにより、処理中に裏側露出面に付着した処理液等を、十分に洗浄することができる。   Further, in the substrate processing mechanism according to the first aspect of the present invention, the processing liquid adhered to the backside exposed surface during processing by causing the cleaning agent to flow in the direction of the outer edge of the processing substrate by the centrifugal force generated by the rotation of the mounting table. Etc. can be sufficiently washed.

本発明の第１の観点に係る基板処理機構において、回転台の外周を囲む外筒部材に環状液路を形成して、この環状液路の上面のノズル口によって洗浄液ノズルを構成することにより、処理基板の寸法が非常に小さい場合でも、非常に簡単な構成で、処理基板の裏側露出面に洗浄液を略環状に付着させることができる。   In the substrate processing mechanism according to the first aspect of the present invention, an annular liquid passage is formed in the outer cylinder member surrounding the outer periphery of the turntable, and the cleaning liquid nozzle is configured by the nozzle port on the upper surface of the annular liquid passage. Even when the size of the processing substrate is very small, the cleaning liquid can be attached to the exposed surface of the back side of the processing substrate in a substantially annular shape with a very simple configuration.

本発明の第１の観点に係る基板処理機構において、ノズル口の開口を逆テーパ状に形成することにより、このノズル口に溜まる洗浄液の液面の面積が大きくなり、これにより該開口における洗浄液の隆起高さを高くすることができるので、裏側露出面に洗浄液を付着させ易くなる。   In the substrate processing mechanism according to the first aspect of the present invention, by forming the opening of the nozzle port in an inversely tapered shape, the area of the liquid surface of the cleaning liquid collected in the nozzle port is increased, thereby Since the height of the bulge can be increased, the cleaning liquid can be easily adhered to the exposed surface on the back side.

本発明の第１の観点に係る基板処理機構において、ノズル口の開口を、処理基板の中心側で高く且つ外縁側で低くなるように形成することで、洗浄液が内側に流動することを、更に確実に防止できる。   In the substrate processing mechanism according to the first aspect of the present invention, by forming the opening of the nozzle port so as to be high at the center side of the processing substrate and low at the outer edge side, the cleaning liquid further flows inside. It can be surely prevented.

本発明の第１の観点に係る基板処理機構において、裏側露出面に付着した洗浄液をノズル口から引き離された後で、前記載置台を回転させることにより、該回転の遠心力で、前記裏側露出面に付着した前記洗浄液を飛散させるので、上述のように洗浄液をノズル口から隆起させて処理基板に付着させるにも拘わらず、裏側露出面の洗浄液を簡単に除去することができる。   In the substrate processing mechanism according to the first aspect of the present invention, after the cleaning liquid adhering to the backside exposed surface is pulled away from the nozzle port, the backside exposure is performed with the rotational centrifugal force by rotating the mounting table. Since the cleaning liquid adhering to the surface is scattered, the cleaning liquid on the back side exposed surface can be easily removed despite the fact that the cleaning liquid rises from the nozzle opening and adheres to the processing substrate as described above.

本発明の第１の観点に係る基板処理機構において、載置台を上昇させてノズル口と処理基板との距離を遠ざけることにより、簡単な構成で、裏側露出面の洗浄液を除去することができる。   In the substrate processing mechanism according to the first aspect of the present invention, the cleaning liquid on the back-side exposed surface can be removed with a simple configuration by raising the mounting table to increase the distance between the nozzle opening and the processing substrate.

本発明の第１の観点に係る基板処理機構によれば、処理基板の径が２０ｍｍ以下の場合であっても、洗浄液が内側に流動して該処理基板と載置台との間に浸入することを防止して、歩留まり低下、デバイス性能の低下、搬送不良、装置の故障等を防止することができる。   According to the substrate processing mechanism according to the first aspect of the present invention, even when the diameter of the processing substrate is 20 mm or less, the cleaning liquid flows inward and enters between the processing substrate and the mounting table. Can be prevented to prevent yield reduction, device performance deterioration, conveyance failure, apparatus failure, and the like.

本発明の第１の観点に係る小型製造装置によれば、上記本発明の第１の観点の基板処理機構を備えているので、上記効果を有する小型製造装置を提供することができる。   According to the small manufacturing apparatus according to the first aspect of the present invention, since the substrate processing mechanism according to the first aspect of the present invention is provided, a small manufacturing apparatus having the above effects can be provided.

本発明の第２の観点に係る基板処理機構では、ノズル口から洗浄液を隆起させて、処理基板の裏側露出面に、表面張力で付着させることができる。従って、従来のように針状の洗浄液ノズルから処理基板に洗浄液を吹き付けて裏面上で拡げる場合と異なり、洗浄液が内側に流動して該処理基板と載置台との間に浸入することが無い。従って、本発明の第２の観点によれば、洗浄液の残留に起因する歩留まり低下、デバイス性能の低下、搬送不良、装置の故障等を防止することができる。   In the substrate processing mechanism according to the second aspect of the present invention, the cleaning liquid can be raised from the nozzle opening and can be attached to the exposed back surface of the processing substrate by surface tension. Therefore, unlike the conventional case where the cleaning liquid is sprayed from the needle-shaped cleaning liquid nozzle onto the processing substrate and spread on the back surface, the cleaning liquid does not flow inward and enter between the processing substrate and the mounting table. Therefore, according to the second aspect of the present invention, it is possible to prevent a decrease in yield, a decrease in device performance, a conveyance failure, an apparatus failure, and the like due to the remaining cleaning liquid.

加えて、本発明の第２の観点に係る基板処理機構では、裏側露出面に付着した洗浄液をノズル口から引き離された後で、前記載置台を回転させることにより、該回転の遠心力で、前記裏側露出面に付着した前記洗浄液を飛散させるので、上述のように洗浄液をノズル口から隆起させて処理基板に付着させるにも拘わらず、裏側露出面の洗浄液を簡単に除去することができる。   In addition, in the substrate processing mechanism according to the second aspect of the present invention, the cleaning liquid adhering to the back side exposed surface is separated from the nozzle port, and then, by rotating the mounting table, the centrifugal force of the rotation, Since the cleaning liquid adhering to the backside exposed surface is scattered, the cleaning liquid on the backside exposed surface can be easily removed despite the fact that the cleaning liquid rises from the nozzle opening and adheres to the processing substrate as described above.

本発明の第２の観点に係る基板処理機構において、回転台の外周を囲む外筒部材に環状液路を形成して、この環状液路の上面のノズル口によって洗浄液ノズルを構成することにより、処理基板の寸法が非常に小さい場合でも、非常に簡単な構成で、処理基板の裏側露出面に洗浄液を略環状に付着させることができる。更には、単に載置台を上昇させるだけで、ノズル口と処理基板との距離を遠ざけることができるので、簡単な構成で、裏側露出面の洗浄液を除去することができる。   In the substrate processing mechanism according to the second aspect of the present invention, by forming an annular liquid passage in the outer cylindrical member surrounding the outer periphery of the turntable, and configuring the cleaning liquid nozzle by the nozzle port on the upper surface of the annular liquid passage, Even when the size of the processing substrate is very small, the cleaning liquid can be attached to the exposed surface of the back side of the processing substrate in a substantially annular shape with a very simple configuration. Furthermore, since the distance between the nozzle opening and the processing substrate can be increased simply by raising the mounting table, the cleaning liquid on the back side exposed surface can be removed with a simple configuration.

本発明の第２の観点に係る基板処理機構によれば、処理基板の径が２０ｍｍ以下の場合であっても、洗浄液が内側に流動して該処理基板と載置台との間に浸入することを防止できるとともに、裏側露出面の洗浄液を簡単に除去することができる。   According to the substrate processing mechanism according to the second aspect of the present invention, even when the diameter of the processing substrate is 20 mm or less, the cleaning liquid flows inward and enters between the processing substrate and the mounting table. Can be prevented, and the cleaning liquid on the back side exposed surface can be easily removed.

本発明の第２の観点に係る小型製造装置によれば、上記本発明の第２の観点の基盤処理機構を備えているので、上記効果を有する小型製造装置を提供することができる。   According to the small-sized manufacturing apparatus according to the second aspect of the present invention, since the base processing mechanism according to the second aspect of the present invention is provided, a small-sized manufacturing apparatus having the above effects can be provided.

実施の形態１に係る小型製造装置の全体構成を示す概念的斜視図である。1 is a conceptual perspective view showing an overall configuration of a small manufacturing apparatus according to Embodiment 1. FIG. 実施の形態１に係るレジスト塗布装置の構成を示す概念的平面図である。1 is a conceptual plan view showing a configuration of a resist coating apparatus according to Embodiment 1. FIG. 実施の形態１に係るスピンコーター機構のコーターカップ部の構成を示す概略的断面図である。3 is a schematic cross-sectional view showing a configuration of a coater cup portion of the spin coater mechanism according to Embodiment 1. FIG. 実施の形態１に係るスピンコーター機構に設けられた駆動部の構成を示す概略的断面図である。3 is a schematic cross-sectional view showing a configuration of a drive unit provided in the spin coater mechanism according to Embodiment 1. FIG. 実施の形態１に係るスピンコーター機構に設けられた洗浄液ノズルの、ノズル口形状の例を示す概念的平面図である。FIG. 3 is a conceptual plan view showing an example of a nozzle mouth shape of a cleaning liquid nozzle provided in the spin coater mechanism according to the first embodiment. 実施の形態１に係るスピンコーター機構に設けられた洗浄液ノズルの、ノズル口形状の例を示す概念的平面図である。FIG. 3 is a conceptual plan view showing an example of a nozzle mouth shape of a cleaning liquid nozzle provided in the spin coater mechanism according to the first embodiment. 実施の形態１に係るスピンコーター機構に設けられた洗浄液ノズルの、ノズル口形状の例を示す概念的平面図である。FIG. 3 is a conceptual plan view showing an example of a nozzle mouth shape of a cleaning liquid nozzle provided in the spin coater mechanism according to the first embodiment. 実施の形態１に係るスピンコーター機構の動作説明図である。FIG. 5 is an operation explanatory diagram of the spin coater mechanism according to the first embodiment. 実施の形態１に係るスピンコーター機構の動作説明図である。FIG. 5 is an operation explanatory diagram of the spin coater mechanism according to the first embodiment.

［発明の実施の形態１］
以下、本発明の実施の形態１について、本発明を小型半導体ウェハ用のレジスト塗布装置に適用した場合を例に採って説明する。Embodiment 1 of the Invention
Hereinafter, Embodiment 1 of the present invention will be described taking as an example the case where the present invention is applied to a resist coating apparatus for a small semiconductor wafer.

図１は、この実施の形態１に係る小型半導体製造装置の全体構成を概念的に示す斜視図である。   FIG. 1 is a perspective view conceptually showing the overall configuration of the small semiconductor manufacturing apparatus according to the first embodiment.

図１から解るように、この実施の形態１に係る小型半導体製造装置１００は、処理室としてのレジスト塗布装置１１０と、装置前室１２０とを収容する。レジスト塗布装置１１０と装置前室１２０とは、分離可能に構成されている。   As can be seen from FIG. 1, the small semiconductor manufacturing apparatus 100 according to the first embodiment accommodates a resist coating apparatus 110 as a processing chamber and an apparatus front chamber 120. The resist coating apparatus 110 and the apparatus front chamber 120 are configured to be separable.

レジスト塗布装置１１０は、図示しないウェハ搬送口を介して装置前室１２０から半導体ウェハ（図示せず）を受け取る。そして、この半導体ウェハに対して、公知のレジスト膜形成処理（後述）を行う。レジスト塗布装置１１０についての詳細な説明は、省略する。この実施の形態１では、半導体ウェハとして、径が２０ｍｍ以下（例えば１２．５±０．２ｍｍ）の小径のものを使用する。   The resist coating apparatus 110 receives a semiconductor wafer (not shown) from the apparatus front chamber 120 via a wafer transfer port (not shown). Then, a known resist film forming process (described later) is performed on the semiconductor wafer. A detailed description of the resist coating apparatus 110 will be omitted. In the first embodiment, a semiconductor wafer having a small diameter of 20 mm or less (for example, 12.5 ± 0.2 mm) is used.

一方、装置前室１２０は、ウェハ搬送容器（図示せず）に収容された半導体ウェハを取り出して、レジスト塗布装置１１０に搬送するための部屋である。装置前室１２０の天板１２０ａには、ウェハ搬送容器を載置するための容器載置台１２１と、載置されたウェハ搬送容器を上方から押圧固定する押さえレバー１２２と、小型半導体製造装置１００の操作を行うための操作釦等を備えた操作パネル１２４が設けられている。また、装置前室１２０は、ウェハ搬送容器から下方に取り出した半導体ウェハをレジスト塗布装置１１０に搬入するための搬送ロボット（図示せず）を備えている。   On the other hand, the apparatus front chamber 120 is a room for taking out a semiconductor wafer accommodated in a wafer transfer container (not shown) and transferring it to the resist coating apparatus 110. The top plate 120 a of the apparatus front chamber 120 has a container mounting table 121 for mounting a wafer transfer container, a pressing lever 122 for pressing and fixing the mounted wafer transfer container from above, and a small semiconductor manufacturing apparatus 100. An operation panel 124 having operation buttons and the like for performing operations is provided. Further, the front chamber 120 of the apparatus includes a transfer robot (not shown) for loading a semiconductor wafer taken out from the wafer transfer container into the resist coating apparatus 110.

図２は、レジスト塗布装置１１０の構成を概念的に示す平面図である。図２に示したように、この実施の形態１では、１台のレジスト塗布装置１１０（例えば縦３０ｃｍ、横３０ｃｍ）の内部に、搬送ユニット２１０、ＨＭＤＳ（ヘキサメチルジシラザン）処理ユニット２２０、コーターカップ部２３０、レジストノズル２４０、ＥＢＲ（Ｅｄｇｅ Ｂｅａｄ Ｒｅｍｏｖａｌ）ノズル２５０、ベーク処理ユニット２６０等が収容されている。   FIG. 2 is a plan view conceptually showing the configuration of the resist coating apparatus 110. As shown in FIG. 2, in the first embodiment, a transfer unit 210, a HMDS (hexamethyldisilazane) processing unit 220, and a coater are provided in one resist coating apparatus 110 (for example, 30 cm long and 30 cm wide). A cup portion 230, a resist nozzle 240, an EBR (Edge Bead Removal) nozzle 250, a bake processing unit 260, and the like are accommodated.

搬送ユニット２１０は、半導体ウェハを上述の搬送ロボット（図示せず）から受け取って、ＨＭＤＳ処理ユニット２２０、コーターカップ部２３０、ベーク処理ユニット２６０に順次搬送する。搬送ユニット２１０の本体部２１１は、一対のハンド部２１２ａ，２１２ｂを備えている。ハンド部２１２ａ，２１２ｂの先端部分には、円弧状のウェハ載置部２１３ａ，２１３ｂが、互いに対向するように形成されている。半導体ウェハは、これらウェハ載置部２１２ａ，２１２ｂに外縁部が当接するように、載置される。ハンド部２１２ａ，２１２ｂは、互いに遠ざかる方向に開いたり、互いに近づく方向に閉じたりすることができる。図２は、ハンド部２１２ａ，２１２ｂが閉じた状態である。搬送ユニット２１０は、図示しない機構により、本体部２１１を回転させることができると共に、ハンド部２１２ａ，２１２ｂを伸縮させることができる。   The transport unit 210 receives a semiconductor wafer from the above-described transport robot (not shown) and sequentially transports the semiconductor wafer to the HMDS processing unit 220, the coater cup unit 230, and the bake processing unit 260. The main body 211 of the transport unit 210 includes a pair of hands 212a and 212b. Arc-shaped wafer mounting portions 213a and 213b are formed at the tip portions of the hand portions 212a and 212b so as to face each other. The semiconductor wafer is placed so that the outer edge portion comes into contact with these wafer placement portions 212a and 212b. The hand portions 212a and 212b can be opened in a direction away from each other or closed in a direction approaching each other. FIG. 2 shows a state in which the hand portions 212a and 212b are closed. The transport unit 210 can rotate the main body portion 211 and extend and contract the hand portions 212a and 212b by a mechanism (not shown).

ＨＭＤＳ処理ユニット２２０は、ＨＭＤＳ処理（すなわち、フォトレジストと半導体ウェハとの密着性を向上させるために、半導体ウェハ表面のＯ−Ｈ基をＨＭＤＳで置換する処理）を行うための機構である。ＨＭＤＳ処理ユニット２２０は、ホットプレート２２１と、例えば４本の載置ピン２２２ａ〜２２２ｄとを備えている。載置ピン２２２ａ〜２２２ｄは、このホットプレート２２１の外縁部の内側に略均等に配置されている。これら載置ピン２２２ａ〜２２２ｄは、図示しない昇降機構によって昇降させることができ、最下降したときにはホットプレート２２１内に収容される。半導体ウェハをホットプレート２２１上に載置する為には、まず、ハンド部２１２ａ，２１２ｂが閉じた状態で、ウェハ載置部２１３ａ，２１３ｂ上に半導体ウェハを載置し、搬送ユニット２１０の本体部２１１を、ホットプレート２２１に対向する位置まで回転させ、更に、ハンド部２１２ａ，２１２ｂをホットプレート２２１上まで前進させる。そして、載置ピン２２２ａ〜２２２ｄを上昇させて半導体ウェハを下方から持ち上げることで、ハンド部２１２ａ，２１２ｂから離間させる。続いて、このハンド部２１２ａ，２１２ｂを開いて、後退させる。その後、ホットプレート２２１内に収容される位置まで、載置ピン２２２ａ〜２２２ｄを下降させることにより、ホットプレート２２１上に半導体ウェハが載置される。   The HMDS processing unit 220 is a mechanism for performing HMDS processing (that is, processing for replacing the O—H group on the surface of the semiconductor wafer with HMDS in order to improve the adhesion between the photoresist and the semiconductor wafer). The HMDS processing unit 220 includes a hot plate 221 and, for example, four mounting pins 222a to 222d. The mounting pins 222a to 222d are arranged substantially evenly inside the outer edge portion of the hot plate 221. These mounting pins 222a to 222d can be moved up and down by a lifting mechanism (not shown), and are housed in the hot plate 221 when lowered. In order to place the semiconductor wafer on the hot plate 221, first, the semiconductor wafer is placed on the wafer placing portions 213a and 213b with the hand portions 212a and 212b closed, and the main body of the transfer unit 210 is placed. 211 is rotated to a position facing the hot plate 221, and the hand portions 212 a and 212 b are further advanced onto the hot plate 221. Then, the mounting pins 222a to 222d are lifted to lift the semiconductor wafer from below, thereby separating them from the hand portions 212a and 212b. Subsequently, the hand portions 212a and 212b are opened and retracted. Thereafter, the semiconductor wafer is placed on the hot plate 221 by lowering the placement pins 222 a to 222 d to the position where the hot plate 221 is accommodated.

コーターカップ部２３０は、半導体ウェハに対するレジスト膜の形成や、ＥＢＲ処理、裏面洗浄処理等を行うための機構である。コーターカップ部２３０は、半導体ウェハを保持して回転させるための、載置部２３１を備えている。コーターカップ部２３０の詳細については、後述する。   The coater cup unit 230 is a mechanism for performing resist film formation, EBR processing, back surface cleaning processing, and the like on a semiconductor wafer. The coater cup unit 230 includes a mounting unit 231 for holding and rotating the semiconductor wafer. Details of the coater cup unit 230 will be described later.

レジストノズル２４０は、本発明の「処理液供給部」に相当し、レジスト膜形成工程において、回転する半導体ウェハに、フォトレジスト液を供給するためのノズルである。フォトレジストを供給する際、レジストノズル２４０は、載置部２３１に載置された半導体ウェハの中心部上方までノズル口２４１を回転移動させて、この半導体ウェハ上に、フォトレジスト液を滴下する。   The resist nozzle 240 corresponds to the “processing liquid supply unit” of the present invention, and is a nozzle for supplying a photoresist liquid to the rotating semiconductor wafer in the resist film forming step. When supplying the photoresist, the resist nozzle 240 rotates and moves the nozzle port 241 above the center of the semiconductor wafer placed on the placement portion 231, and drops the photoresist solution on the semiconductor wafer.

ＥＢＲノズル２５０は、ＥＢＲ工程（すなわち、半導体ウェハの周縁部に形成されたレジスト膜を除去する工程）において、半導体ウェハの周縁部にレジスト溶解液を供給するためのノズルである。ＥＢＲ工程に際して、ＥＢＲノズル２５０は、載置部２３１に載置された半導体ウェハの周縁部上方までノズル口２５１を回転移動させて、レジスト溶液を滴下する。   The EBR nozzle 250 is a nozzle for supplying a resist solution to the peripheral portion of the semiconductor wafer in the EBR step (that is, a step of removing the resist film formed on the peripheral portion of the semiconductor wafer). In the EBR process, the EBR nozzle 250 causes the nozzle port 251 to rotate and move to a position above the peripheral edge of the semiconductor wafer placed on the placement portion 231 to drop the resist solution.

ベーク処理ユニット２６０は、フォトレジスト膜を固化するために半導体ウェハを加熱する機構である。ベーク処理ユニット２６０は、ホットプレート２６１と、例えば４本の載置ピン２６２ａ〜２６２ｄとを備えている。載置ピン２６２ａ〜２６２ｄは、このホットプレート２６１の外縁部の内側に略均等に配置されており、図示しない昇降機構によって昇降させることができる。半導体ウェハをホットプレート２６１上に載置する際の手順は、ＨＭＤＳ処理ユニット２２０の場合と同様であるので説明を省略する。   The bake processing unit 260 is a mechanism for heating the semiconductor wafer in order to solidify the photoresist film. The bake processing unit 260 includes a hot plate 261 and, for example, four mounting pins 262a to 262d. The mounting pins 262a to 262d are substantially evenly arranged inside the outer edge of the hot plate 261, and can be moved up and down by a lifting mechanism (not shown). The procedure for placing the semiconductor wafer on the hot plate 261 is the same as that in the case of the HMDS processing unit 220, and thus the description thereof is omitted.

図３及び図４は、この実施の形態１に係るスピンコーター機構の構成を示す概略図であり、図３はコーターカップ部２３０、図４は駆動部４００を示している。   3 and 4 are schematic views showing the configuration of the spin coater mechanism according to the first embodiment. FIG. 3 shows the coater cup unit 230, and FIG.

図３に示すように、コーターカップ部２３０は、回転部３１０と、外筒部材３２０と、カップ筐体３３０と、カップカバー３４０とを備えている。   As shown in FIG. 3, the coater cup unit 230 includes a rotating unit 310, an outer cylinder member 320, a cup housing 330, and a cup cover 340.

回転部３１０は、中空の回転軸３１１を備えている。回転軸３１１は、駆動部４００（図４参照）によって回転及び昇降される。回転軸３１１の上端部は、半導体ウェハＷを載置する載置部２３１（図２参照）となっており、半導体ウェハＷを載置して中空部３１１ａを真空引きすることにより（後述）、この半導体ウェハＷを保持することができる。   The rotating unit 310 includes a hollow rotating shaft 311. The rotating shaft 311 is rotated and moved up and down by the drive unit 400 (see FIG. 4). The upper end portion of the rotating shaft 311 is a mounting portion 231 (see FIG. 2) on which the semiconductor wafer W is placed. By placing the semiconductor wafer W and evacuating the hollow portion 311a (described later), The semiconductor wafer W can be held.

外筒部材３２０は、回転軸３１１の外周を囲むように設けられている。外筒部材３２０は、半導体ウェハＷから飛散したフォトレジスト液や洗浄液等が廃液溝３３２に流入するように、傘状に形成されている。   The outer cylinder member 320 is provided so as to surround the outer periphery of the rotation shaft 311. The outer cylinder member 320 is formed in an umbrella shape so that a photoresist liquid, a cleaning liquid, or the like scattered from the semiconductor wafer W flows into the waste liquid groove 332.

この実施の形態１では、外筒部材３２０の上端部に、環状の洗浄液ノズル（本発明の「裏面洗浄部」に相当）が形成される。このために、外筒部材３２０の上端部付近には、環状溝３２１が設けられている。環状溝３２１の上方は、開口している。そして、この開口から、環状溝３２１内に、環状嵌合部材３２２が嵌め込まれている。   In the first embodiment, an annular cleaning liquid nozzle (corresponding to the “back surface cleaning portion” of the present invention) is formed at the upper end portion of the outer cylinder member 320. For this purpose, an annular groove 321 is provided in the vicinity of the upper end portion of the outer cylinder member 320. The upper part of the annular groove 321 is open. An annular fitting member 322 is fitted into the annular groove 321 from this opening.

環状溝３２１の内側面と環状嵌合部材３２２との間には、隙間が設けられている。この隙間は、環状溝３２１の下側部分では幅広に形成されて環状液路３２３を形成しており、上側部分では幅狭に形成されてノズル口３２４を形成している。但し、ノズル口３２４の上端部３２５は、断面が上方向に拡幅した逆テーパ状となるように形成されている。   A gap is provided between the inner surface of the annular groove 321 and the annular fitting member 322. The gap is formed wide at the lower portion of the annular groove 321 to form the annular liquid passage 323, and is formed narrow at the upper portion to form the nozzle port 324. However, the upper end portion 325 of the nozzle port 324 is formed so as to have a reverse taper shape whose cross section is widened upward.

また、ノズル口３２４は、環状溝３２１のノズル内側面が、環状嵌合部材３２２のノズル内側面よりも高くなるように、形成されている。   The nozzle port 324 is formed so that the nozzle inner surface of the annular groove 321 is higher than the nozzle inner surface of the annular fitting member 322.

環状溝３２１は、洗浄液供給路３２６と繋がっている。洗浄液供給路３２６は、外筒部材３２０の底面から、この環状溝３２１まで貫通している。洗浄液供給路３２６には、洗浄液を所定圧力で供給するためのポンプ機構（図示せず）が連結されている。   The annular groove 321 is connected to the cleaning liquid supply path 326. The cleaning liquid supply path 326 penetrates from the bottom surface of the outer cylinder member 320 to the annular groove 321. A pump mechanism (not shown) for supplying the cleaning liquid at a predetermined pressure is connected to the cleaning liquid supply path 326.

このような構成によれば、洗浄液供給路３２６から所定圧力で供給された洗浄液を環状液路３２３内に貯留させ、ノズル口３２４上に隆起させることができる。また、ノズル口３２４の上端部３２５が逆テーパ状に形成されているので、この先端に貯留する洗浄液量を増やして、洗浄液の隆起高さを高くし、半導体ウェハＷの裏側露出面に付着し易くすることができる。更には、環状溝３２１側（すなわち、半導体ウェハＷの中心側）が環状嵌合部材３２２側（すなわち、半導体ウェハＷの外縁側）よりも高いので、洗浄液が回転軸３１１側に流入し難い。   According to such a configuration, the cleaning liquid supplied from the cleaning liquid supply path 326 at a predetermined pressure can be stored in the annular liquid path 323 and raised above the nozzle port 324. Further, since the upper end portion 325 of the nozzle port 324 is formed in a reverse taper shape, the amount of the cleaning liquid stored at the tip is increased, the raised height of the cleaning liquid is increased, and it adheres to the exposed back surface of the semiconductor wafer W Can be made easier. Furthermore, since the annular groove 321 side (that is, the center side of the semiconductor wafer W) is higher than the annular fitting member 322 side (that is, the outer edge side of the semiconductor wafer W), it is difficult for the cleaning liquid to flow into the rotating shaft 311 side.

カップ筐体３３０及びカップカバー３４０は、回転部３１０及び外筒部材３２０の外周を覆っており、半導体ウェハＷから飛散したフォトレジスト液や洗浄液等がコーターカップ部２３０の外部に達することを防ぐ。   The cup housing 330 and the cup cover 340 cover the outer periphery of the rotating part 310 and the outer cylinder member 320, and prevent the photoresist liquid, the cleaning liquid, and the like scattered from the semiconductor wafer W from reaching the outside of the coater cup part 230.

図４に示すように、回転軸３１１の下端部は、支持体４０１に、回転自在に支持されている。支持体４０１は、雌ねじ部４０１ａ，４０１ｂを備えている。支持体４０１は、これらの雌ねじ部４０１ａ，４０１ｂで、ねじ軸４０２に、上下動自在に支持されている。そして、支持体４０１は、このねじ軸４０２を昇降モータ４０３で回転させることにより、ガイドレール４０４に案内されて昇降し、その結果、回転軸３１１が昇降する。これら雌ねじ部４０１ａ，４０１ｂ、ねじ軸４０２及び昇降モータ４０３が、本発明の「昇降部」に相当する。   As shown in FIG. 4, the lower end portion of the rotation shaft 311 is rotatably supported by the support body 401. The support 401 includes female screw parts 401a and 401b. The support 401 is supported on the screw shaft 402 by these female screw portions 401a and 401b so as to be movable up and down. Then, the support 401 is moved up and down by being guided by the guide rail 404 by rotating the screw shaft 402 by the lifting motor 403, and as a result, the rotating shaft 311 is moved up and down. The female screw portions 401a and 401b, the screw shaft 402, and the lifting motor 403 correspond to the “lifting portion” of the present invention.

または、雌ねじ部４０１ａ，４０１ｂ及びねじ軸４０２に代えて、転造ボールねじ内蔵アクチュエータを使用することも可能である。かかる構造によっても、本体部４０１を、ガイドレール４０４に案内させつつ昇降モータ４０３で昇降させることができ、従って、回転軸３１１を昇降させることができる。この場合は、かかる転造ボールねじ内蔵アクチュエータと昇降モータ４０３とが、本発明の「昇降部」に相当する。
また、支持体４０１には、回転モータ４０５が支持されている。回転モータ４０５のモータ軸４０５ａは、回転軸３１１と略平行となるように配置されていると共に、プーリ４０６が取り付けられている。一方、回転軸３１１には、プーリ４０７が設けられている。そして、これらプーリ４０６，４０７には、ベルト４０８が巻回されている。これにより、回転モータ４０５を用いて、回転軸３１１を回転させることができる。これらプーリ４０６，４０７、ベルト４０８及び回転モータ４０５が、本発明の「載置台回転部」に相当する。Alternatively, instead of the female screw portions 401a and 401b and the screw shaft 402, it is also possible to use a rolling ball screw built-in actuator. Even with such a structure, the main body 401 can be moved up and down by the lifting motor 403 while being guided by the guide rail 404, and thus the rotating shaft 311 can be moved up and down. In this case, the rolling ball screw built-in actuator and the lifting motor 403 correspond to the “lifting part” of the present invention.
Further, a rotating motor 405 is supported on the support body 401. A motor shaft 405 a of the rotary motor 405 is disposed so as to be substantially parallel to the rotary shaft 311, and a pulley 406 is attached. On the other hand, the rotation shaft 311 is provided with a pulley 407. A belt 408 is wound around the pulleys 406 and 407. Thereby, the rotating shaft 311 can be rotated using the rotary motor 405. The pulleys 406 and 407, the belt 408, and the rotation motor 405 correspond to the “mounting table rotating portion” of the present invention.

更に、支持体４０１には、真空バルブ４０９が取り付けられている。この真空バルブ４０９を介して、回転軸３１１の中空部３１１ａが、図示しない真空ポンプに連結されている。そして、この真空ポンプで回転軸３１１の中空部３１１ａを真空引きすることにより、ウェハＷ（図３参照）が回転軸３１１の上端に吸着される。   Further, a vacuum valve 409 is attached to the support 401. Through this vacuum valve 409, the hollow portion 311a of the rotating shaft 311 is connected to a vacuum pump (not shown). Then, by vacuuming the hollow portion 311 a of the rotating shaft 311 with this vacuum pump, the wafer W (see FIG. 3) is adsorbed to the upper end of the rotating shaft 311.

図５Ａ、図５Ｂ及び図５Ｃは、ノズル口３２４の形状例を示す概念的平面図である。   5A, 5B, and 5C are conceptual plan views showing examples of the shape of the nozzle port 324. FIG.

この実施の形態１では、ノズル口３２４に設けられた開口５０１の形状を、完全な環状とした（図５Ａ参照）。しかし、ノズル口３２４の開口形状は、例えば、円弧状の開口５０２を略環状に配列したものであっても良いし（図５Ｂ参照）、円形や多角形等の開口５０３を略環状に配列したものであっても良い（図５Ｃ参照）。本願では、開口５０１のみならず、開口５０２，５０３のような形状を備えたノズル口も、「環状に形成されたノズル口」と称する。すなわち、ノズル口３２４から半導体ウェハＷの裏面に付着された洗浄液が、回転による遠心力で拡がった際に、この半導体ウェハＷの外縁部全体に行き渡るような形状であれば、どのような形状であっても、本発明の効果を得ることができる。   In the first embodiment, the shape of the opening 501 provided in the nozzle port 324 is a complete ring shape (see FIG. 5A). However, the opening shape of the nozzle port 324 may be, for example, an arcuate opening 502 arranged in a substantially annular shape (see FIG. 5B), or a circular or polygonal opening 503 arranged in a substantially annular shape. It may be a thing (refer FIG. 5C). In the present application, not only the opening 501 but also the nozzle openings having shapes such as the openings 502 and 503 are referred to as “annular nozzle openings”. In other words, any shape can be used as long as the cleaning liquid attached to the back surface of the semiconductor wafer W from the nozzle port 324 spreads over the entire outer edge of the semiconductor wafer W when it is spread by the centrifugal force due to rotation. Even if it exists, the effect of this invention can be acquired.

次に、この実施の形態１に係るスピンコーター機構の動作について説明する。   Next, the operation of the spin coater mechanism according to the first embodiment will be described.

まず、昇降モータ４０３（図４参照）により、回転軸３１１を、所定高さまで上昇させる。そして、ＨＭＤＳ処理後の半導体ウェハＷが、搬送ユニット２１０（図２参照）によって回転軸３１１の上端に載置されるとともに、真空ポンプによって真空吸着される。   First, the rotary shaft 311 is raised to a predetermined height by the lifting motor 403 (see FIG. 4). Then, the semiconductor wafer W after the HMDS process is placed on the upper end of the rotating shaft 311 by the transfer unit 210 (see FIG. 2) and is vacuum-sucked by a vacuum pump.

そして、回転軸３１１が下降し、更に、レジストノズル２４０が半導体ウェハＷの中心上方まで回転移動する。続いて、半導体ウェハＷを所定回転速度で回転させながら、レジストノズル２４０からフォトレジスト液を滴下する。その結果、このフォトレジスト液Ｒが、遠心力によって半導体ウェハＷ上で拡がり、液状のフォトレジスト膜を形成する。このとき、フォトレジスト液Ｒの一部は、半導体ウェハＷの周縁部から裏面側に回り込む（後述の図６Ａ参照）。   Then, the rotating shaft 311 is lowered, and the resist nozzle 240 is rotated to the upper center of the semiconductor wafer W. Subsequently, a photoresist solution is dropped from the resist nozzle 240 while rotating the semiconductor wafer W at a predetermined rotation speed. As a result, the photoresist liquid R spreads on the semiconductor wafer W by centrifugal force, and forms a liquid photoresist film. At this time, a part of the photoresist solution R goes around from the peripheral edge of the semiconductor wafer W to the back surface side (see FIG. 6A described later).

次に、レジストノズル２４０を半導体ウェハＷ上から退避させた後、ＥＢＲノズル２５０を半導体ウェハＷの外周縁上方まで移動させる。そして、この半導体ウェハＷを回転させながらレジスト溶解液を供給することにより、上述のようなＥＢＲ処理を行う。この結果、半導体ウェハＷの外周縁や表面側の外周縁近傍に形成されたフォトレジスト膜が除去される。   Next, after the resist nozzle 240 is retracted from the semiconductor wafer W, the EBR nozzle 250 is moved to above the outer peripheral edge of the semiconductor wafer W. Then, the EBR process as described above is performed by supplying a resist solution while rotating the semiconductor wafer W. As a result, the photoresist film formed in the outer periphery of the semiconductor wafer W or in the vicinity of the outer periphery on the surface side is removed.

この実施の形態１では、このＥＢＲ処理と同時に、半導体ウェハＷの裏面洗浄を行う。このために、洗浄液供給路３２６に、所定圧力で、洗浄液Ｌが供給される。これにより、環状液路３２３が、洗浄液Ｌで充填させる。そして、この洗浄液Ｌは、ノズル口３２４から上昇して、上端部３２５に達する。その結果、洗浄液Ｌは、表面張力によって上端部３２５から隆起した状態になって、半導体ウェハＷの裏面に付着する（図６Ａ参照）。付着した洗浄液Ｌは、この半導体ウェハＷの回転が与える遠心力によって、この半導体ウェハＷの外周縁に向かって移動し、この外周縁のフォトレジスト液を洗い流す。その後、洗浄液やフォトレジスト液は廃液溝３３２（図３参照）を介して排出される。   In the first embodiment, the back surface of the semiconductor wafer W is cleaned simultaneously with the EBR process. For this purpose, the cleaning liquid L is supplied to the cleaning liquid supply path 326 at a predetermined pressure. Thereby, the annular liquid path 323 is filled with the cleaning liquid L. Then, the cleaning liquid L rises from the nozzle port 324 and reaches the upper end 325. As a result, the cleaning liquid L rises from the upper end 325 due to surface tension and adheres to the back surface of the semiconductor wafer W (see FIG. 6A). The adhering cleaning liquid L moves toward the outer peripheral edge of the semiconductor wafer W by centrifugal force given by the rotation of the semiconductor wafer W, and the photoresist liquid on the outer peripheral edge is washed away. Thereafter, the cleaning liquid and the photoresist liquid are discharged through the waste liquid groove 332 (see FIG. 3).

ＥＢＲ処理及び裏面洗浄処理が終了すると、次に、ＥＢＲ処理のレジスト溶解液や洗浄液を半導体ウェハＷから除去するための乾燥処理を行う。この乾燥処理では、昇降モータ４０３により、半導体ウェハＷを所定量だけ上昇させる（図６Ｂ参照）。この結果、ノズル口３２４の上端部３２５で隆起した洗浄液Ｌと、半導体ウェハＷの裏面とが、分離する。そして、半導体ウェハＷの回転による遠心力で、レジスト溶解液や洗浄液を飛散させる。これにより、この半導体ウェハＷを乾燥させることができる。   When the EBR process and the back surface cleaning process are completed, a drying process for removing the resist solution and the cleaning liquid of the EBR process from the semiconductor wafer W is performed next. In this drying process, the semiconductor wafer W is raised by a predetermined amount by the lifting motor 403 (see FIG. 6B). As a result, the cleaning liquid L raised at the upper end 325 of the nozzle port 324 and the back surface of the semiconductor wafer W are separated. Then, the resist solution and the cleaning solution are scattered by the centrifugal force generated by the rotation of the semiconductor wafer W. Thereby, this semiconductor wafer W can be dried.

その後、昇降モータ４０３により、回転軸３１１を、所定高さまで上昇させる。続いて、搬送ユニット２１０が、半導体ウェハＷを受け取って、ベーク処理ユニット２６０まで移送する。   Thereafter, the rotary shaft 311 is raised to a predetermined height by the lifting motor 403. Subsequently, the transfer unit 210 receives the semiconductor wafer W and transfers it to the bake processing unit 260.

以上説明したように、この実施の形態１では、洗浄液を半導体ウェハＷの裏面に吹き付けるのでは無く、表面張力で隆起した洗浄液を付着させて遠心力で外周縁方向に移動させることによって、洗浄を行う。このため、洗浄液が内側に流動することが無いので、半導体ウェハＷの裏面と載置面（回転軸３１１の上端）との間に流入することも無い。   As described above, in the first embodiment, the cleaning liquid is not sprayed on the back surface of the semiconductor wafer W, but the cleaning liquid raised by the surface tension is attached and moved by the centrifugal force in the direction of the outer peripheral edge. Do. For this reason, since the cleaning liquid does not flow inward, it does not flow between the back surface of the semiconductor wafer W and the mounting surface (the upper end of the rotating shaft 311).

また、この実施の形態１では、ノズル口３２４が、環状溝３２１側（すなわち、半導体ウェハＷの中心側）で高く且つ環状嵌合部材３２２側（すなわち、半導体ウェハＷの外縁側）で低くなるように形成されているので、洗浄液の回転軸３１１側への流入を、更に確実に防止できる。   In the first embodiment, the nozzle port 324 is high on the annular groove 321 side (that is, the center side of the semiconductor wafer W) and low on the annular fitting member 322 side (that is, the outer edge side of the semiconductor wafer W). Thus, the inflow of the cleaning liquid to the rotating shaft 311 side can be prevented more reliably.

加えて、この実施の形態１では、ノズル口３２４の上端部が逆テーパ状に形成されているので、洗浄液Ｌの隆起高さを十分に高くすることができる。   In addition, in the first embodiment, since the upper end portion of the nozzle port 324 is formed in an inversely tapered shape, the height of the cleaning liquid L can be sufficiently increased.

なお、この実施の形態１では、半導体ウェハを用いる半導体製造装置を例に採って説明したが、本発明は、他の種類の基板（例えばサファイア基板等の絶縁性基板や、アルミニウム基板等の導電性基板）や、非円盤形状（例えば矩形）の処理基板からデバイスを製造する製造装置にも適用することができる。   In the first embodiment, a semiconductor manufacturing apparatus using a semiconductor wafer has been described as an example. However, the present invention is applicable to other types of substrates (for example, insulating substrates such as a sapphire substrate and conductive materials such as an aluminum substrate). And a manufacturing apparatus for manufacturing a device from a non-disk-shaped (for example, rectangular) processing substrate.

また、この実施の形態１では「デバイス」として半導体デバイスを例に採ったが、本発明は他の種類のデバイス（例えば、光学素子や光集積回路等の光デバイス）を製造する製造装置にも適用することができる。   In the first embodiment, a semiconductor device is taken as an example of “device”. However, the present invention is also applied to a manufacturing apparatus for manufacturing other types of devices (for example, optical devices such as optical elements and optical integrated circuits). Can be applied.

更には、この実施の形態１では、本発明をレジスト塗布装置に適用した場合を例に採って説明したが、例えばフォトリソグラフィー工程で使用する現像装置等、他の基板処理機構にも使用することができる。   Furthermore, in the first embodiment, the case where the present invention is applied to a resist coating apparatus has been described as an example. However, the present invention can also be used for other substrate processing mechanisms such as a developing apparatus used in a photolithography process. Can do.

加えて、この実施の形態１では、本発明を小型の半導体ウェハＷに使用した場合を例に採って説明したが、８インチや１２インチ等の大径半導体ウェハ等にも使用できる。   In addition, in the first embodiment, the case where the present invention is used for a small semiconductor wafer W has been described as an example, but it can also be used for a large-diameter semiconductor wafer such as 8 inches or 12 inches.

この実施の形態１では、ノズル口３２４から隆起した洗浄液を半導体ウェハＷの裏面に付着させると共に、遠心力で半導体ウェハＷの外縁部に移動させて洗浄する場合を例に採って説明したが、例えば半導体ウェハＷを回転させずに表面処理を行うような場合に、ノズル口３２４から隆起した洗浄液を半導体ウェハＷの裏面に付着させることで、この半導体ウェハＷと載置部２３１との間への処理液の浸入を防止することも可能である。   In the first embodiment, the cleaning liquid raised from the nozzle port 324 is attached to the back surface of the semiconductor wafer W, and moved to the outer edge portion of the semiconductor wafer W by centrifugal force for cleaning. For example, when the surface treatment is performed without rotating the semiconductor wafer W, the cleaning liquid raised from the nozzle port 324 is attached to the back surface of the semiconductor wafer W, so that the semiconductor wafer W is placed between the semiconductor wafer W and the mounting portion 231. It is also possible to prevent the treatment liquid from entering.

この実施の形態１では、半導体ウェハＷを上昇させることによって該半導体ウェハＷとノズル口３２４とを遠ざけたが、ノズル口３２４を下降させても良い。   In the first embodiment, the semiconductor wafer W and the nozzle port 324 are moved away by raising the semiconductor wafer W, but the nozzle port 324 may be lowered.

１００ 小型半導体製造装置
１１０ 処理室
１２０ 装置前室
１２１ 容器載置台
１２２ 押さえレバー
１２４ 操作釦
２１０ レジスト塗布装置
２２０ ＨＭＤＳ処理ユニット
２３０ コーターカップ部
２４０ レジストノズル
２５０ ＥＢＲノズル
２６０ ベール処理ユニット
３１０ 回転部
３１１ 回転軸
３２０ 外筒部材
３２１ 環状溝
３２２ 嵌合部材
３２３ 環状液路
３２４ ノズル口
３２５ 上端部
３２６ 洗浄液供給路
３３０ カップ筐体
３４０ カップカバー
４００ 駆動部
４０１ 支持体
４０１ａ，４０１ｂ 雌ねじ部
４０２ ねじ軸
４０３ 昇降モータ
４０４ ガイドレール
４０５ 回転モータ
４０６，４０７ プーリ
４０８ ベルト
４０９ 真空バルブDESCRIPTION OF SYMBOLS 100 Small semiconductor manufacturing apparatus 110 Processing chamber 120 Front chamber 121 Container mounting stand 122 Holding lever 124 Operation button 210 Resist coating apparatus 220 HMDS processing unit 230 Coater cup part 240 Resist nozzle 250 EBR nozzle 260 Bale processing unit 310 Rotating part 311 Rotating shaft 320 outer cylinder member 321 annular groove 322 fitting member 323 annular liquid path 324 nozzle port 325 upper end 326 cleaning liquid supply path 330 cup housing 340 cup cover 400 drive part 401 support body 401a, 401b female screw part 402 screw shaft 403 lift motor 404 Guide rail 405 Rotary motor 406, 407 Pulley 408 Belt 409 Vacuum valve

Claims (13)

載置台に載置された処理基板の裏側露出面に洗浄液を供給する洗浄液ノズルを有する基板処理機構であって、
前記洗浄液ノズルは、前記載置台の載置面を囲むように環状に形成されたノズル口を有し、
前記洗浄液の液面を前記ノズル口から隆起させて、前記処理基板の裏側露出面に接触させ、該洗浄液の表面張力によって該裏側露出面に略環状に付着させる、
ことを特徴とする基板処理機構。A substrate processing mechanism having a cleaning liquid nozzle for supplying a cleaning liquid to a backside exposed surface of a processing substrate mounted on a mounting table,
The cleaning liquid nozzle has a nozzle port formed in an annular shape so as to surround the mounting surface of the mounting table,
The liquid surface of the cleaning liquid is raised from the nozzle opening, is brought into contact with the backside exposed surface of the processing substrate, and is attached to the backside exposed surface in a substantially annular shape by the surface tension of the cleaning liquid.
A substrate processing mechanism. 前記載置台に前記処理基板を保持させて回転させることにより、前記裏側露出面に付着した前記洗浄液を該回転の遠心力で該処理基板の外周縁方向に流動させることで、前記処理基板の前記裏側露出面を洗浄する特徴とする請求項１に記載の基板処理機構。   The cleaning substrate attached to the backside exposed surface is caused to flow in the direction of the outer peripheral edge of the processing substrate by the centrifugal force of the rotation by holding and rotating the processing substrate on the mounting table. The substrate processing mechanism according to claim 1, wherein the back side exposed surface is cleaned. 前記洗浄液ノズルは、
前記載置台の外周を囲むように設けられた外筒部材と、
該外筒部材の上端部付近に設けられた環状液路と、
該環状液路に前記洗浄液を所定圧力で供給する洗浄液供給路と、
を備え、
前記ノズル口は、前記環状液路の上側に設けられて、該環状液路から供給された前記洗浄液を隆起させる、
ことを特徴とする請求項１に記載の基板処理機構。The cleaning liquid nozzle
An outer cylinder member provided to surround the outer periphery of the mounting table,
An annular liquid passage provided near the upper end of the outer cylinder member;
A cleaning liquid supply path for supplying the cleaning liquid to the annular liquid path at a predetermined pressure;
With
The nozzle port is provided on the upper side of the annular liquid path to raise the cleaning liquid supplied from the annular liquid path.
The substrate processing mechanism according to claim 1. 前記ノズル口は、断面が上方向に拡幅した逆テーパ状に形成されたことを特徴とする請求項１に記載の基板処理機構。   The substrate processing mechanism according to claim 1, wherein the nozzle port is formed in a reverse taper shape whose cross section is widened upward. 前記ノズル口は、前記処理基板の中心側で高く且つ外縁側で低くなるように形成されていることを特徴とする請求項１に記載の基板処理機構。   The substrate processing mechanism according to claim 1, wherein the nozzle port is formed so as to be higher on a center side of the processing substrate and lower on an outer edge side. 該裏面洗浄部による洗浄の後で、前記ノズル口と前記処理基板との距離を遠ざけることにより、該処理基板の前記裏側露出面に付着した前記洗浄液を前記ノズル口から引き離し、
前記裏側露出面に付着した前記洗浄液が前記ノズル口から引き離された後で、前記載置台を回転させることにより、該回転の遠心力で、前記裏側露出面に付着した前記洗浄液を飛散させる、
ことを特徴とする請求項１に記載の基板処理機構。After cleaning by the back surface cleaning unit, the cleaning liquid adhering to the exposed back surface of the processing substrate is separated from the nozzle port by increasing the distance between the nozzle port and the processing substrate,
After the cleaning liquid adhering to the back side exposed surface is pulled away from the nozzle port, the cleaning liquid adhering to the back side exposed surface is scattered by the centrifugal force of the rotation by rotating the mounting table.
The substrate processing mechanism according to claim 1. 前記載置台を上昇させることにより、前記ノズル口と前記処理基板との距離を遠ざけることを特徴とする請求項６に記載の基板処理機構。   The substrate processing mechanism according to claim 6, wherein a distance between the nozzle port and the processing substrate is increased by raising the mounting table. 前記処理基板が、径が２０ｍｍ以下であることを特徴とする請求項１に記載の基板処理機構。   The substrate processing mechanism according to claim 1, wherein the processing substrate has a diameter of 20 mm or less. 請求項１に記載の基板処理機構を備えることを特徴とする小型製造装置。   A compact manufacturing apparatus comprising the substrate processing mechanism according to claim 1. 載置台の載置面に処理基板を保持させた状態で、処理液ノズルから該処理基板の表面に処理液を供給する処理液供給部と、
ノズル口から洗浄液の液面を隆起させて、前記処理基板の裏側露出面に接触させ、該洗浄液の表面張力によって該裏側露出面に付着させる洗浄液ノズルを有する裏面洗浄部と、
を備える基板処理機構であって、
該裏面洗浄部による洗浄の後で、前記ノズル口と前記処理基板との距離を遠ざけることにより、該処理基板の前記裏側露出面に付着した前記洗浄液を前記ノズル口から引き離す昇降部と、
前記裏側露出面に付着した前記洗浄液が前記ノズル口から引き離された後で、前記載置台を回転させることにより、該回転の遠心力で、前記裏側露出面に付着した前記洗浄液を飛散させる載置台回転部と、
を更に備えることを特徴とする基板処理機構。A processing liquid supply unit that supplies the processing liquid from the processing liquid nozzle to the surface of the processing substrate in a state where the processing substrate is held on the mounting surface of the mounting table;
A back surface cleaning unit having a cleaning liquid nozzle that protrudes from the nozzle port, contacts the back side exposed surface of the processing substrate, and adheres to the back side exposed surface by the surface tension of the cleaning liquid;
A substrate processing mechanism comprising:
After the cleaning by the back surface cleaning unit, an elevating unit for separating the cleaning liquid adhering to the exposed back surface of the processing substrate from the nozzle port by increasing the distance between the nozzle port and the processing substrate,
After the cleaning liquid adhering to the back side exposed surface is pulled away from the nozzle port, the mounting table causes the cleaning liquid adhering to the back side exposed surface to be scattered by the centrifugal force of the rotation by rotating the mounting table. A rotating part;
And a substrate processing mechanism. 前記載置台の外周を囲むように外筒部材が設けられ、
該外筒部材の上側に前記洗浄液ノズルが設けられ、
前記載置台を上昇させることにより、前記ノズル口と前記処理基板との距離を遠ざける、
ことを特徴とする請求項１０に記載の基板処理機構。An outer cylinder member is provided so as to surround the outer periphery of the mounting table,
The cleaning liquid nozzle is provided on the upper side of the outer cylinder member,
By raising the mounting table, the distance between the nozzle port and the processing substrate is increased.
The substrate processing mechanism according to claim 10. 前記処理基板が、径が２０ｍｍ以下であることを特徴とする請求項１０に記載の基板処理機構。   The substrate processing mechanism according to claim 10, wherein the processing substrate has a diameter of 20 mm or less. 請求項１０に記載の基板処理機構を備えることを特徴とする小型製造装置。   A small-sized manufacturing apparatus comprising the substrate processing mechanism according to claim 10.
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