JP6887371B2 - A storage medium that stores a board processing device, a control method for the board processing device, and a program. - Google Patents

A storage medium that stores a board processing device, a control method for the board processing device, and a program. Download PDF

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JP6887371B2
JP6887371B2 JP2017244060A JP2017244060A JP6887371B2 JP 6887371 B2 JP6887371 B2 JP 6887371B2 JP 2017244060 A JP2017244060 A JP 2017244060A JP 2017244060 A JP2017244060 A JP 2017244060A JP 6887371 B2 JP6887371 B2 JP 6887371B2
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polishing
polishing head
substrate
static pressure
pressure plate
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JP2019110266A (en
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遊 石井
遊 石井
優 町田
優 町田
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Ebara Corp
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Ebara Corp
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Priority to KR1020180135673A priority patent/KR20190074951A/en
Priority to TW107142560A priority patent/TWI765125B/en
Priority to US16/224,537 priority patent/US20190184517A1/en
Priority to CN201811556240.4A priority patent/CN110014363A/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B21/00—Machines or devices using grinding or polishing belts; Accessories therefor
    • B24B21/004—Machines or devices using grinding or polishing belts; Accessories therefor using abrasive rolled strips
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B21/00—Machines or devices using grinding or polishing belts; Accessories therefor
    • B24B21/04—Machines or devices using grinding or polishing belts; Accessories therefor for grinding plane surfaces
    • B24B21/06—Machines or devices using grinding or polishing belts; Accessories therefor for grinding plane surfaces involving members with limited contact area pressing the belt against the work, e.g. shoes sweeping across the whole area to be ground
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/0076—Other grinding machines or devices grinding machines comprising two or more grinding tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/033—Other grinding machines or devices for grinding a surface for cleaning purposes, e.g. for descaling or for grinding off flaws in the surface
    • B24B27/04—Grinding machines or devices in which the grinding tool is supported on a swinging arm
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
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    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
    • B24B37/107—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement in a rotary movement only, about an axis being stationary during lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/12—Lapping plates for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • B24B37/345—Feeding, loading or unloading work specially adapted to lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/06—Work supports, e.g. adjustable steadies
    • B24B41/061—Work supports, e.g. adjustable steadies axially supporting turning workpieces, e.g. magnetically, pneumatically
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/06—Work supports, e.g. adjustable steadies
    • B24B41/067—Work supports, e.g. adjustable steadies radially supporting workpieces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/04—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor involving a rotary work-table
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
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    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

Description

本発明は、基板処理装置、基板処理装置の制御方法、基板処理装置の制御方法をコンピュータに実行させるためのプログラムを格納した記憶媒体に関する。 The present invention relates to a storage medium that stores a substrate processing apparatus, a control method for the substrate processing apparatus, and a program for causing a computer to execute a control method for the substrate processing apparatus.

近年、メモリー回路、ロジック回路、イメージセンサ（例えばＣＭＯＳセンサー）などのデバイスは、より高集積化されつつある。これらのデバイスを形成する工程においては、微粒子や塵埃などの異物がデバイスに付着することがある。デバイスに付着した異物は、配線間の短絡や回路の不具合を引き起こしてしまう。したがって、デバイスの信頼性を向上させるために、デバイスが形成されたウェハを洗浄して、ウェハ上の異物を除去することが必要とされる。 In recent years, devices such as memory circuits, logic circuits, and image sensors (for example, CMOS sensors) are becoming more integrated. In the process of forming these devices, foreign matter such as fine particles and dust may adhere to the device. Foreign matter adhering to the device causes short circuits between wires and circuit malfunctions. Therefore, in order to improve the reliability of the device, it is necessary to wash the wafer on which the device is formed to remove foreign matter on the wafer.

ウェハの裏面（非デバイス面）にも、上述したような微粒子や粉塵などの異物が付着することがある。このような異物がウェハの裏面に付着すると、ウェハが露光装置のステージ基準面から離間したりウェハ表面がステージ基準面に対して傾き、結果として、パターニングのずれや焦点距離のずれが生じることとなる。このような問題を防止するために、ウェハの表面（デバイス面）にレジストを塗布した後に、露光工程前に、ウェハの裏面に付着した異物を除去することが必要とされる。 Foreign substances such as fine particles and dust as described above may also adhere to the back surface (non-device surface) of the wafer. When such foreign matter adheres to the back surface of the wafer, the wafer is separated from the stage reference surface of the exposure apparatus or the wafer surface is tilted with respect to the stage reference surface, resulting in patterning deviation and focal length deviation. Become. In order to prevent such a problem, it is necessary to remove the foreign matter adhering to the back surface of the wafer after applying the resist to the front surface (device surface) of the wafer and before the exposure step.

最近では、光学式露光技術の他に、ナノインプリント技術を使ったパターンニング装置が開発されている。このナノインプリント技術は、パターンニング用の押型をウェハに塗布された樹脂材料に押し付けることで配線パターンを転写する技術である。ナノインプリント技術では、押型とウェハ間、およびウェハとウェハ間での汚れの転写を避けるために、ウェハの表面に存在する異物を除去することが必要となる。 Recently, in addition to optical exposure technology, patterning equipment using nanoimprint technology has been developed. This nanoimprint technology is a technology for transferring a wiring pattern by pressing a patterning stamp against a resin material coated on a wafer. In nanoimprint technology, it is necessary to remove foreign matter present on the surface of the wafer in order to avoid transfer of stains between the stamp and the wafer and between the wafers.

特開２０１３−１７２０１９号公報（特許文献１）には、ウェハを回転させながら、砥粒、研磨テープ等を備えるスクラバーを摺接させて、ウェハの表面及び／又は裏面に付着した異物を除去する基板処理装置が開示されている。 According to Japanese Patent Application Laid-Open No. 2013-172019 (Patent Document 1), while rotating the wafer, a scrubber provided with abrasive grains, polishing tape, etc. is slidably contacted to remove foreign matter adhering to the front surface and / or back surface of the wafer. The substrate processing apparatus is disclosed.

特開２０１３−１７２０１９号公報Japanese Unexamined Patent Publication No. 2013-172019

しかしながら、比較的大きい研磨ヘッドだけで基板を研磨すると、基板に局所的な研磨不足が生じるおそれがある。例えば、基板の外周部は、基板の中央部よりも研磨ヘッドの研磨具と接触する時間が短くなり、研磨レートが低くなる傾向がある。このような研磨レートのばらつきは、基板の面内均一性を低下させ、露光工程に影響を与える可能性がある。本発明の目的は、上述した課題の少なくとも一部を解決することである。 However, if the substrate is polished only with a relatively large polishing head, there is a possibility that the substrate may be locally insufficiently polished. For example, the outer peripheral portion of the substrate tends to have a shorter contact time with the polishing tool of the polishing head than the central portion of the substrate, and the polishing rate tends to be lower. Such variations in the polishing rate may reduce the in-plane uniformity of the substrate and affect the exposure process. An object of the present invention is to solve at least a part of the above-mentioned problems.

本発明の一側面は、研磨具を基板の第１面に摺接させて前記第１面を研磨する第１研磨ヘッドと、 前記第１研磨ヘッドよりも小径の第２研磨ヘッドであって、研磨具を前記基板の前記第１面に摺接させて前記第１面を研磨する前記第２研磨ヘッドと、 前記第１研磨ヘッド及び前記第２研磨ヘッドに対応して、前記基板の前記第１面とは反対側の第２面側から流体圧によって前記基板を支持する基板支持機構と、を備えた基板処理装置に関す
る。 One aspect of the present invention is a first polishing head for polishing the first surface by sliding a polishing tool against the first surface of the substrate, and a second polishing head having a diameter smaller than that of the first polishing head. The second polishing head for polishing the first surface by sliding a polishing tool against the first surface of the substrate, and the second polishing head of the substrate corresponding to the first polishing head and the second polishing head. The present invention relates to a substrate processing apparatus including a substrate support mechanism for supporting the substrate by fluid pressure from the second surface side opposite to the first surface.

本発明の一側面は、基板を保持して前記基板を回転させる基板保持機構であって、前記基板の周縁部に接触可能する複数のローラを備え、各ローラがその軸心を中心に回転可能に構成されている、前記基板保持機構と、 研磨具を前記基板の第１面に摺接させて前記第１面を研磨する第１研磨ヘッドと、 前記第１研磨ヘッドよりも小径の第２研磨ヘッドであって、研磨具を基板の第１面に摺接させて前記第１面を研磨する前記第２研磨ヘッドと、を備えた基板処理装置に関する。 One aspect of the present invention is a substrate holding mechanism that holds a substrate and rotates the substrate, and includes a plurality of rollers that can come into contact with the peripheral edge of the substrate, and each roller can rotate about its axis. The substrate holding mechanism, the first polishing head for polishing the first surface by sliding the polishing tool against the first surface of the substrate, and the second polishing head having a diameter smaller than that of the first polishing head. The present invention relates to a substrate processing apparatus including a polishing head, the second polishing head for polishing the first surface by sliding a polishing tool against the first surface of the substrate.

一実施形態に係る基板処理装置を備えた基板処理システムの平面図である。It is a top view of the substrate processing system provided with the substrate processing apparatus which concerns on one Embodiment. 研磨ユニットの研磨ヘッドの構成を示す模式的な平面図である。It is a schematic plan view which shows the structure of the polishing head of a polishing unit. 研磨ユニットの研磨ヘッドの構成を示す模式的な平面図である。It is a schematic plan view which shows the structure of the polishing head of a polishing unit. 第１実施形態に係る研磨ユニットの模式的な側面図である。It is a schematic side view of the polishing unit which concerns on 1st Embodiment. 静圧プレートの構成例である。This is a configuration example of a static pressure plate. 静圧プレートの構成例である。This is a configuration example of a static pressure plate. 静圧プレートの構成例である。This is a configuration example of a static pressure plate. 静圧プレートの平面形状の例である。This is an example of the planar shape of a static pressure plate. 静圧プレートの平面形状の例である。This is an example of the planar shape of a static pressure plate. 第２実施形態に係る研磨ユニットの模式的な側面図である。It is a schematic side view of the polishing unit which concerns on 2nd Embodiment. 第２実施形態に係る研磨ユニットの模式的な平面図である。It is a schematic plan view of the polishing unit which concerns on 2nd Embodiment. 静圧プレートの移動機構の構成例を示す。An example of the configuration of the static pressure plate moving mechanism is shown. 第３実施形態に係る研磨ユニットの模式的な側面図である。It is a schematic side view of the polishing unit which concerns on 3rd Embodiment. 第４実施形態に係る研磨ユニットの模式的な側面図である。It is a schematic side view of the polishing unit which concerns on 4th Embodiment. 静圧プレートの流体噴出口の構成例である。This is a configuration example of a fluid outlet of a static pressure plate. 静圧プレートの流体噴出口の構成例である。This is a configuration example of a fluid outlet of a static pressure plate. 研磨ユニットの基板保持機構の一例である。This is an example of the substrate holding mechanism of the polishing unit. 研磨ユニットの基板保持機構の一例である。This is an example of the substrate holding mechanism of the polishing unit. 研磨ユニットの他の例である。Another example of a polishing unit. 研磨ユニットの他の例である。Another example of a polishing unit.

（第１実施形態）
図１は、一実施形態に係る基板処理装置を備えた基板処理システムの平面図である。基板処理システム１は、フロントロード部３を備えたロードアンロード部２と、基板処理装置としての第１研磨ユニット８および第２研磨ユニット９と、洗浄ユニット１１と、乾燥ユニット１３と、制御装置１４と、を備えている。また、ロードアンロード部２には、フロントロード部３の配列方向に沿って移動可能な第１搬送ロボット４が設置されている。また、第１研磨ユニット８および第２研磨ユニット９に隣接して、第２搬送ロボット６と、第１ウェハステーション５と、第２ウェハステーション７とが設置されている。また、洗浄ユニット１１に隣接して第３搬送ロボット１０が設置されており、洗浄ユニット１１と乾燥ユニット１３との間には、第４搬送ロボット１２が設置されている。 (First Embodiment)
FIG. 1 is a plan view of a substrate processing system including the substrate processing apparatus according to the embodiment. The substrate processing system 1 includes a load / unload unit 2 provided with a front load unit 3, a first polishing unit 8 and a second polishing unit 9 as substrate processing devices, a cleaning unit 11, a drying unit 13, and a control device. 14 and. Further, the load / unload unit 2 is provided with a first transfer robot 4 that can move along the arrangement direction of the front load unit 3. Further, a second transfer robot 6, a first wafer station 5, and a second wafer station 7 are installed adjacent to the first polishing unit 8 and the second polishing unit 9. Further, a third transfer robot 10 is installed adjacent to the cleaning unit 11, and a fourth transfer robot 12 is installed between the cleaning unit 11 and the drying unit 13.

フロントロード部３は、複数のウェハを格納するウェハカセットを１又は複数載置することが可能に構成されている。ウェハカセットは、例えば、オープンカセット、ＳＭＩＦ(Standard Manufacturing Interface)ポッド、ＦＯＵＰ(Front Opening Unified Pod)である。第１搬送ロボット４は、フロントロード部３に搭載されたウェハカセットからウェハを取り出し、ウェハステーション５に載置する。 The front load unit 3 is configured so that one or a plurality of wafer cassettes for storing a plurality of wafers can be placed. Wafer cassettes are, for example, open cassettes, SMIF (Standard Manufacturing Interface) pods, and FOUPs (Front Opening Unified Pods). The first transfer robot 4 takes out a wafer from the wafer cassette mounted on the front load unit 3 and places it on the wafer station 5.

ウェハステーション５は、図示しない反転機を備えており、第１搬送ロボット４により
載置されたウェハの表面と裏面とを反転させる。第２搬送ロボット６は、反転後のウェハ（フェースダウンの状態）をウェハステーション５から取り出し、研磨ユニット８又は研磨ユニット９に搬入する。研磨ユニット８及び研磨ユニット９は、後述するように、ウェハを保持して回転させる基板保持機構と、研磨具が設けられた研磨ヘッドとを備えている。研磨ユニット８及び研磨ユニット９では、いわゆる裏面研磨装置であり、基板保持機構によってウェハを回転させながら、ウェハの裏面（上方に向いている）を研磨ヘッドの研磨具により研磨する。ここでは、研磨ユニット８及び研磨ユニット９が共に裏面研磨装置である場合を説明する。ウェハカセットから取り出されたウェハは、何れかの研磨ユニットにおいて裏面研磨処理された後に、洗浄、乾燥処理され、ウェハカセットに戻される。他の実施形態では、一方の研磨ユニットを裏面研磨装置とし、他方の研磨ユニットをべベル研磨装置、またはウェハ外周領域を研磨する装置としてもよい。この場合、一方の研磨ユニットで研磨処理されたウェハは、その後、他方の研磨ユニットで研磨処理された後に、洗浄、乾燥される。 The wafer station 5 is provided with a reversing machine (not shown), and the front surface and the back surface of the wafer placed on the first transfer robot 4 are inverted. The second transfer robot 6 takes out the inverted wafer (face-down state) from the wafer station 5 and carries it into the polishing unit 8 or the polishing unit 9. As will be described later, the polishing unit 8 and the polishing unit 9 include a substrate holding mechanism for holding and rotating the wafer, and a polishing head provided with a polishing tool. The polishing unit 8 and the polishing unit 9 are so-called back surface polishing devices, and the back surface (facing upward) of the wafer is polished by the polishing tool of the polishing head while rotating the wafer by the substrate holding mechanism. Here, a case where both the polishing unit 8 and the polishing unit 9 are back surface polishing devices will be described. The wafer taken out from the wafer cassette is subjected to backside polishing treatment in any of the polishing units, then washed and dried, and returned to the wafer cassette. In another embodiment, one polishing unit may be a back surface polishing device, and the other polishing unit may be a bevel polishing device or an apparatus for polishing the outer peripheral region of the wafer. In this case, the wafer polished by one polishing unit is then polished by the other polishing unit, and then washed and dried.

また、第２搬送ロボット６は、研磨ユニット８又は研磨ユニット９で処理された後のウェハをウェハステーション７に載置する。第３搬送ロボット１０は、ウェハステーション７から研磨処理後のウェハを取り出し、洗浄ユニット１１に搬入する。洗浄ユニット１１は、研磨処理後のウェハに対して洗浄処理を施す。一実施形態では、洗浄ユニット１１は、ウェハを挟むように配置された上側ロールスポンジおよび下側ロールスポンジを備えており、洗浄液をウェハの両面に供給しながら、これらのスポンジでウェハの両面を洗浄する。 Further, the second transfer robot 6 places the wafer processed by the polishing unit 8 or the polishing unit 9 on the wafer station 7. The third transfer robot 10 takes out the polished wafer from the wafer station 7 and carries it into the cleaning unit 11. The cleaning unit 11 performs a cleaning process on the wafer after the polishing process. In one embodiment, the cleaning unit 11 includes an upper roll sponge and a lower roll sponge arranged so as to sandwich the wafer, and while supplying cleaning liquid to both sides of the wafer, both sides of the wafer are cleaned with these sponges. To do.

第４搬送ロボット１２は、洗浄ユニット１１で洗浄されたウェハを取り出し、乾燥ユニット１３に搬入する。乾燥ユニット１３は、洗浄後のウェハを乾燥する。一実施形態では、乾燥ユニット１３は、ウェハをその軸心周りに高速で回転させることによってウェハをスピン乾燥する。その後、乾燥後のウェハは、第１搬送ロボット３によって取り出され、ウェハカセットに戻される。 The fourth transfer robot 12 takes out the wafer washed by the washing unit 11 and carries it into the drying unit 13. The drying unit 13 dries the washed wafer. In one embodiment, the drying unit 13 spin-drys the wafer by rotating the wafer around its axis at high speed. After that, the dried wafer is taken out by the first transfer robot 3 and returned to the wafer cassette.

制御装置１４は、上述した基板処理装置１の各部の動作を制御する。制御装置１４は、各種の設定データ及び各種のプログラムを格納したメモリと、メモリのプログラムを実行するＣＰＵと、を有する。メモリを構成する記憶媒体は、揮発性の記憶媒体及び／又は不揮発性の記憶媒体を含むことができる。記憶媒体は、例えば、ＲＯＭ、ＲＡＭ、ハードディスク、ＣＤ−ＲＯＭ、ＤＶＤ−ＲＯＭ、フレキシブルディスクなどの任意の記憶媒体の１又は複数を含むことができる。メモリが格納するプログラムは、例えば、各搬送ロボットの搬送を制御するプログラム、各研磨ユニットの研磨処理を制御するプログラム、洗浄ユニットの洗浄処理を制御するプログラム、乾燥ユニットの乾燥処理を制御するプログラムを含む。また、制御装置１４は、基板処理装置１及びその他の関連装置を統括制御する図示しない上位コントローラと通信可能に構成され、上位コントローラが有するデータベースとの間でデータのやり取りをすることができる。 The control device 14 controls the operation of each part of the substrate processing device 1 described above. The control device 14 has a memory for storing various setting data and various programs, and a CPU for executing the program of the memory. The storage medium constituting the memory may include a volatile storage medium and / or a non-volatile storage medium. The storage medium can include, for example, one or more of any storage media such as ROM, RAM, hard disk, CD-ROM, DVD-ROM, flexible disk, and the like. The programs stored in the memory include, for example, a program for controlling the transfer of each transfer robot, a program for controlling the polishing process of each polishing unit, a program for controlling the cleaning process of the cleaning unit, and a program for controlling the drying process of the drying unit. Including. Further, the control device 14 is configured to be communicable with a higher-level controller (not shown) that controls the board processing device 1 and other related devices in an integrated manner, and can exchange data with the database of the higher-level controller.

図２Ａ、図２Ｂは、研磨ユニットの研磨ヘッドの構成を示す模式的な平面図である。図２Ａは、研磨ヘッドが退避位置にある場合を示す。図２Ｂは、研磨ヘッドが研磨位置にある場合を示す。本実施形態の研磨ユニットは、複数の研磨ヘッドを備えている。以下では、一例として、研磨ユニットが２つの研磨ヘッド２１、２３を備える場合について説明するが、３つ以上の研磨ヘッドを備えてもよい。なお、図２Ａ、Ｂでは図示省略するが、各研磨ユニットには、ウェハＷにリンス液を供給するリンス液供給ノズル（図１２参照）が設けられている。 2A and 2B are schematic plan views showing the configuration of the polishing head of the polishing unit. FIG. 2A shows the case where the polishing head is in the retracted position. FIG. 2B shows the case where the polishing head is in the polishing position. The polishing unit of the present embodiment includes a plurality of polishing heads. In the following, as an example, a case where the polishing unit includes two polishing heads 21 and 23 will be described, but three or more polishing heads may be provided. Although not shown in FIGS. 2A and 2B, each polishing unit is provided with a rinse liquid supply nozzle (see FIG. 12) for supplying the rinse liquid to the wafer W.

研磨ヘッド２１は、ウェハＷの半径より大きな直径を有する。研磨ヘッド２１の底面（ウェハに当接する側）には、研磨具としての１又は複数の研磨テープが取り付けられてい
る。例えば、研磨ヘッド２１の底面に３枚の研磨テープが放射状に配置される。研磨テープの両端は、研磨ヘッド２１内に配置された図示しない２つのリールに保持されており、２つのリール間を延びる研磨テープの下面がウェハの面に接触可能とされている。なお、研磨具としては、砥粒を含むパッド、固定砥粒などその他の研磨具を使用することもできる。研磨ヘッド２１は、揺動アーム２２の一端に回転可能に保持されている。研磨ヘッド２１は、揺動アーム２２の一端側に設けられた図示しないヘッド回転機構により回転される。揺動アーム２２の他端は、図示しない揺動軸に接続されており、図示しない軸回転機構の回転により揺動軸が回転されると、揺動アーム２２が揺動される（例えば、図１の状態から図２の状態、又はその逆）。揺動アーム２２の揺動により、研磨ヘッド２１は、退避位置（図２Ａ）と研磨位置（図２Ｂ）との間で揺動される。また、揺動軸には、図示しない昇降機構が連結されており、昇降機構によって研磨ヘッド２１が昇降される。 The polishing head 21 has a diameter larger than the radius of the wafer W. One or more polishing tapes as polishing tools are attached to the bottom surface (the side that contacts the wafer) of the polishing head 21. For example, three polishing tapes are radially arranged on the bottom surface of the polishing head 21. Both ends of the polishing tape are held by two reels (not shown) arranged in the polishing head 21, and the lower surface of the polishing tape extending between the two reels can come into contact with the surface of the wafer. As the polishing tool, other polishing tools such as a pad containing abrasive grains and fixed abrasive grains can also be used. The polishing head 21 is rotatably held at one end of the swing arm 22. The polishing head 21 is rotated by a head rotation mechanism (not shown) provided on one end side of the swing arm 22. The other end of the swing arm 22 is connected to a swing shaft (not shown), and when the swing shaft is rotated by the rotation of a shaft rotation mechanism (not shown), the swing arm 22 swings (for example, FIG. From the state of 1 to the state of FIG. 2 or vice versa). Due to the swing of the swing arm 22, the polishing head 21 is swung between the retracted position (FIG. 2A) and the polishing position (FIG. 2B). A lifting mechanism (not shown) is connected to the swing shaft, and the polishing head 21 is lifted and lowered by the lifting mechanism.

研磨ヘッド２３は、研磨ヘッド２１の直径よりも小さな直径を有する。研磨ヘッド２３の底面（ウェハに当接する側）には、研磨具としての１又は複数の研磨テープが取り付けられている。例えば、研磨ヘッド２３の底面に３枚の研磨テープが放射状に配置される。研磨テープの両端は、研磨ヘッド２３内に配置された図示しない２つのリールに保持されており、２つのリール間を延びる研磨テープの下面がウェハの面に接触可能とされている。なお、研磨具としては、砥粒を含むパッド、固定砥粒などその他の研磨具を使用することもできる。研磨ヘッド２３は、揺動アーム２４の一端に回転可能に保持されている。研磨ヘッド２３は、揺動アーム２４の一端側に設けられた図示しないヘッド回転機構により回転される。揺動アーム２４の他端は、図示しない揺動軸に接続されており、図示しない軸回転機構の回転により揺動軸が回転されると、揺動アーム２４が揺動される。揺動アーム２４の揺動により、研磨ヘッド２３は、退避位置（図２Ａ）と研磨位置（図２Ｂ）との間で揺動される（例えば、図１の状態から図２の状態、又はその逆）。また、揺動軸には、図示しない昇降機構が連結されており、昇降機構によって研磨ヘッド２３が昇降される。ウェハＷは、基板保持機構により保持され、回転される。基板保持機構は、例えば、ウェハＷの外周縁に配置された複数のローラ２−１１（図２Ａ、図２Ｂ、図１２）を備え、これらの複数のローラ２−１１でウェハＷを挟持した状態で、各ローラ２−１１がその軸心周りに回転（自転）することにより、各ローラ２−１１は公転することなく、ウェハＷを回転させる。また、基板保持機構は、図１１に示すような、ウェハＷを狭持して公転することでウェハＷを回転させるチャック１−１１を備える構成であってもよい。各研磨ヘッド２１、２４の回転方向は、図２Ｂに示すように、ウェハＷの回転方向と同一であっても、異なる方向であってもよい。また、各研磨ヘッド２１、２４の回転方向が互いに異なってもよい。
また、ウェハＷの研磨面（本実施形態では、裏面）には、図示しないノズルにより研磨液又は純水が供給される。 The polishing head 23 has a diameter smaller than the diameter of the polishing head 21. One or more polishing tapes as polishing tools are attached to the bottom surface (the side that contacts the wafer) of the polishing head 23. For example, three polishing tapes are radially arranged on the bottom surface of the polishing head 23. Both ends of the polishing tape are held by two reels (not shown) arranged in the polishing head 23, and the lower surface of the polishing tape extending between the two reels can come into contact with the surface of the wafer. As the polishing tool, other polishing tools such as a pad containing abrasive grains and fixed abrasive grains can also be used. The polishing head 23 is rotatably held at one end of the swing arm 24. The polishing head 23 is rotated by a head rotation mechanism (not shown) provided on one end side of the swing arm 24. The other end of the swing arm 24 is connected to a swing shaft (not shown), and when the swing shaft is rotated by the rotation of a shaft rotation mechanism (not shown), the swing arm 24 swings. Due to the swing of the swing arm 24, the polishing head 23 is swung between the retracted position (FIG. 2A) and the polishing position (FIG. 2B) (for example, from the state of FIG. 1 to the state of FIG. 2, or the state thereof. Reverse). A lifting mechanism (not shown) is connected to the swing shaft, and the polishing head 23 is lifted and lowered by the lifting mechanism. The wafer W is held and rotated by the substrate holding mechanism. The substrate holding mechanism includes, for example, a plurality of rollers 2-11 (FIGS. 2A, 2B, and 12) arranged on the outer peripheral edge of the wafer W, and the wafer W is sandwiched between the plurality of rollers 2-11. Then, each roller 2-11 rotates (rotates) around its axis, so that each roller 2-11 rotates the wafer W without revolving. Further, the substrate holding mechanism may have a configuration as shown in FIG. 11 including chucks 1-11 that rotate the wafer W by holding the wafer W and revolving around it. As shown in FIG. 2B, the rotation directions of the polishing heads 21 and 24 may be the same as or different from the rotation direction of the wafer W. Further, the rotation directions of the polishing heads 21 and 24 may be different from each other.
Further, the polishing liquid or pure water is supplied to the polishing surface of the wafer W (the back surface in this embodiment) by a nozzle (not shown).

相対的に大径の研磨ヘッド２１に加えて、相対的に小径の研磨ヘッド２３を使用する理由は、以下の通りである。ウェハＷの外周部では、研磨ヘッド２１による接触時間が短く、研磨レートが相対的に低くなる。そのため、ウェハＷの外周部において、小径の研磨ヘッド２３によって、ウェハＷを補足研磨する。研磨ヘッド２１の研磨と同時に、或いは、研磨ヘッド２１による研磨後に、研磨ヘッド２３によりウェハＷの外周部を追加的に研磨することにより、ウェハＷの裏面の研磨量を均一に近づけることができる。この結果、研磨処理後のウェハＷの裏面の面内均一性を向上し得る。 The reason for using the relatively small diameter polishing head 23 in addition to the relatively large diameter polishing head 21 is as follows. On the outer peripheral portion of the wafer W, the contact time by the polishing head 21 is short, and the polishing rate is relatively low. Therefore, the wafer W is supplementarily polished by the small-diameter polishing head 23 on the outer peripheral portion of the wafer W. The amount of polishing on the back surface of the wafer W can be made uniform by additionally polishing the outer peripheral portion of the wafer W with the polishing head 23 at the same time as polishing the polishing head 21 or after polishing by the polishing head 21. As a result, the in-plane uniformity of the back surface of the wafer W after the polishing treatment can be improved.

図３は、第１実施形態に係る研磨ユニットの模式的な側面図である。ここでは、基板保持機構の図示を省略している。研磨ユニット８、９では、前述した研磨ヘッド２１、２３がウェハＷの裏面に当接してウェハの裏面Ｓ１を研磨する。このとき、研磨ヘッド２１、２３でウェハＷを裏面Ｓ１から表面Ｓ２（この例では、上方から下方に）に向かって押圧するため、研磨ヘッドとは反対側の表面Ｓ２側から基板支持機構（静圧支持機構）３０に
よってウェハＷを支持する。言い換えれば、研磨ヘッド２１、２３がウェハＷの裏面を押圧する力に抗する支持力を静圧支持機構３０によってウェハの表面から加えることにより、ウェハＷが撓むことを抑制する。 FIG. 3 is a schematic side view of the polishing unit according to the first embodiment. Here, the illustration of the substrate holding mechanism is omitted. In the polishing units 8 and 9, the above-mentioned polishing heads 21 and 23 abut on the back surface of the wafer W to polish the back surface S1 of the wafer. At this time, since the wafer W is pressed from the back surface S1 to the front surface S2 (in this example, from the top to the bottom) by the polishing heads 21 and 23, the substrate support mechanism (static) is pressed from the surface S2 side opposite to the polishing head. The wafer W is supported by the pressure support mechanism) 30. In other words, the static pressure support mechanism 30 applies a bearing force against the force of the polishing heads 21 and 23 to press the back surface of the wafer W from the surface of the wafer to prevent the wafer W from bending.

静圧支持機構３０は、静圧プレート３１と、静圧プレート３３とを備えている。静圧プレート３１は、研磨ヘッド２１に対応して設けられている。静圧プレート３１は、研磨ヘッド２１の直径より若干大きく形成されており、平面視において、研磨ヘッド２１の全体を包含し得るように構成、配置されている。静圧プレート３１は、ウェハＷに面する側に支持面３２を有しており、支持面３２とウェハＷの表面との間に若干の隙間を有して配置されている。静圧プレート３１には、後述する流体供給路が形成されており、この流体供給路を介して流体（液体または気体、例えば、純水）が支持面３２に供給されることによって、ウェハＷの表面が流体によって非接触で支持される。 The static pressure support mechanism 30 includes a static pressure plate 31 and a static pressure plate 33. The static pressure plate 31 is provided corresponding to the polishing head 21. The static pressure plate 31 is formed to be slightly larger than the diameter of the polishing head 21, and is configured and arranged so as to include the entire polishing head 21 in a plan view. The static pressure plate 31 has a support surface 32 on the side facing the wafer W, and is arranged with a slight gap between the support surface 32 and the surface of the wafer W. A fluid supply path, which will be described later, is formed in the static pressure plate 31, and a fluid (liquid or gas, for example, pure water) is supplied to the support surface 32 through the fluid supply path to supply the wafer W. The surface is non-contact supported by the fluid.

静圧プレート３３は、研磨ヘッド２３に対応して設けられている。静圧プレート３３は、研磨ヘッド２３の直径より大きく形成されており、平面視において、研磨ヘッド２３の全体を包含し得るように構成、配置されている。静圧プレート３３は、ウェハＷに面する側に支持面３４を有しており、支持面３４とウェハＷの表面との間に若干の隙間を有して配置されている。静圧プレート３３には、後述する流体供給路が形成されており、この流体供給路を介して流体（液体または気体、例えば、純水）が支持面３４に供給されることによって、ウェハＷの表面が流体によって非接触で支持される。 The static pressure plate 33 is provided corresponding to the polishing head 23. The static pressure plate 33 is formed to be larger than the diameter of the polishing head 23, and is configured and arranged so as to include the entire polishing head 23 in a plan view. The static pressure plate 33 has a support surface 34 on the side facing the wafer W, and is arranged with a slight gap between the support surface 34 and the surface of the wafer W. A fluid supply path, which will be described later, is formed in the static pressure plate 33, and a fluid (liquid or gas, for example, pure water) is supplied to the support surface 34 through the fluid supply path to supply the wafer W. The surface is non-contact supported by the fluid.

図４Ａから図４Ｃは、静圧プレートの構成例を示す。ここでは、基板保持機構の図示を省略している。また、ここでは、静圧プレート３１を例に挙げて説明するが、静圧プレート３３も同様の構成を有する。但し、静圧プレート３１と静圧プレート３３とは、異なるタイプの構成を有してもよい。例えば、静圧プレート３１が図４Ａの構成であり、静圧プレート３３が図４Ｂの構成であってもよい。また、静圧プレート３１と静圧プレート３３は、図４から図４Ｃ以外の構成を備えてもよい。 4A to 4C show a configuration example of the static pressure plate. Here, the illustration of the substrate holding mechanism is omitted. Further, although the static pressure plate 31 will be described as an example here, the static pressure plate 33 also has the same configuration. However, the static pressure plate 31 and the static pressure plate 33 may have different types of configurations. For example, the static pressure plate 31 may have the configuration shown in FIG. 4A, and the static pressure plate 33 may have the configuration shown in FIG. 4B. Further, the static pressure plate 31 and the static pressure plate 33 may have a configuration other than those shown in FIGS. 4 to 4C.

図４Ａに示す例では、静圧プレート３１は、加圧された流体（圧力流体）である流体４１を導入するための流体供給路３１ａを有している。流体供給路３１ａは、流体４１を保持するポケット（凹部）３１ｂに連結されている。研磨ヘッド２１により基板Ｗの裏面Ｓ１に印加された荷重は、ポケット３１ｂの中の流体４１と、ポケット３１ｂから静圧プレート３１の支持面３２にオーバフローした流体によって受けられる。図４Ｂに示す例では、流体供給路３１ａから導入された流体４１は、支持面３２の全体に広がり、研磨ヘッド２１により基板Ｗの裏面に印加された荷重を受ける。図４Ｃに示す例では、静圧プレート３１の支持面３２には、多数の通孔３１ｃが形成されており、これらの通孔３１ｃを通じて流体４１が流体供給路３１ａから支持面３２に供給される。支持面３２に供給された流体４１によって、研磨ヘッド２１により基板Ｗの裏面Ｓ１に印加された荷重を受ける。図４ＡからＣには、図２Ａ、Ｂを参照して上述した基板保持機構としての複数のローラ２−１１（図２Ａ、図２Ｂ、図１２）も示す。これらの複数のローラ２−１１でウェハＷを挟持した状態で、各ローラ２−１１がその軸心周りに回転（自転）することにより、各ローラ２−１１は公転することなく、ウェハＷを回転させる。また、基板保持機構は、図１１に示すような、ウェハＷを狭持して公転することでウェハＷを回転させるチャック１−１１を備える構成であってもよい。 In the example shown in FIG. 4A, the static pressure plate 31 has a fluid supply path 31a for introducing a fluid 41 which is a pressurized fluid (pressure fluid). The fluid supply path 31a is connected to a pocket (recess) 31b that holds the fluid 41. The load applied to the back surface S1 of the substrate W by the polishing head 21 is received by the fluid 41 in the pocket 31b and the fluid overflowing from the pocket 31b to the support surface 32 of the static pressure plate 31. In the example shown in FIG. 4B, the fluid 41 introduced from the fluid supply path 31a spreads over the entire support surface 32 and receives the load applied to the back surface of the substrate W by the polishing head 21. In the example shown in FIG. 4C, a large number of through holes 31c are formed in the support surface 32 of the static pressure plate 31, and the fluid 41 is supplied from the fluid supply path 31a to the support surface 32 through these through holes 31c. .. The fluid 41 supplied to the support surface 32 receives the load applied to the back surface S1 of the substrate W by the polishing head 21. 4A to 4C also show a plurality of rollers 2-11 (FIGS. 2A, 2B, 12) as the substrate holding mechanism described above with reference to FIGS. 2A and 2B. With the wafer W sandwiched between these plurality of rollers 2-11, each roller 2-11 rotates (rotates) around its axis, so that each roller 2-11 does not revolve and the wafer W is rotated. Rotate. Further, the substrate holding mechanism may have a configuration as shown in FIG. 11 including chucks 1-11 that rotate the wafer W by holding the wafer W and revolving around it.

図５Ａ、図５Ｂは、静圧プレートの平面形状の例である。図５Ａの例では、静圧プレート３１、３３は、それぞれ、研磨ヘッド２１、２３と同心円状の形状を有する。静圧プレート３１、３３の直径は、それぞれ、研磨ヘッド２１、２３の直径と同等か、若干大きく形成される。図５Ｂの例では、静圧プレート３１、３３の直径は、それぞれ、研磨ヘッド２１、２３の直径よりも大きい、円形または楕円形の一部として構成されている。また、
図５Ａ、図５Ｂにおいて、静圧プレート３１、３３のウェハＷの外周に隣接する部分では、ウェハＷを保持する基板保持機構（例えば、図１１のチャック１−１１）と干渉しない形状とされている。なお、ウェハＷとともに回転しないような基板保持機構（例えば、図５Ａ、図５Ｂ、図１２のローラ２−１１）を使用する場合には、静圧プレート３１、３３は、ウェハＷの外周に重なっても、外周よりも外側まで延びていてもよい。 5A and 5B are examples of the planar shape of the static pressure plate. In the example of FIG. 5A, the static pressure plates 31 and 33 have a concentric shape with the polishing heads 21 and 23, respectively. The diameters of the static pressure plates 31 and 33 are formed to be equal to or slightly larger than the diameters of the polishing heads 21 and 23, respectively. In the example of FIG. 5B, the diameters of the static pressure plates 31 and 33 are configured as part of a circular or elliptical shape that is larger than the diameters of the polishing heads 21 and 23, respectively. Also,
In FIGS. 5A and 5B, the portions of the static pressure plates 31 and 33 adjacent to the outer periphery of the wafer W are shaped so as not to interfere with the substrate holding mechanism for holding the wafer W (for example, chucks 1-11 in FIG. 11). There is. When a substrate holding mechanism (for example, rollers 2-11 in FIGS. 5A, 5B, and 12) that does not rotate with the wafer W is used, the static pressure plates 31 and 33 overlap the outer periphery of the wafer W. Alternatively, it may extend to the outside of the outer circumference.

（第２実施形態）
図６Ａは、第２実施形態に係る研磨ユニットの模式的な側面図である。図６Ｂは、第２実施形態に係る研磨ユニットの模式的な平面図である。ここでは、基板保持機構の図示を省略している。本実施形態の研磨ユニットは、小径の研磨ヘッド２３が揺動しつつ研磨処理を行う点で、第１実施形態に係る研磨ユニットと異なる。その他の構成は、第１実施形態と同様であるので、重複する説明は省略する。 (Second Embodiment)
FIG. 6A is a schematic side view of the polishing unit according to the second embodiment. FIG. 6B is a schematic plan view of the polishing unit according to the second embodiment. Here, the illustration of the substrate holding mechanism is omitted. The polishing unit of the present embodiment is different from the polishing unit of the first embodiment in that the polishing process is performed while the small-diameter polishing head 23 swings. Since other configurations are the same as those of the first embodiment, duplicate description will be omitted.

研磨ヘッド２３の揺動は、上述したように、揺動アーム２４が揺動軸周りに回転されることにより成される。また、静圧プレート３３は、研磨ヘッド２３の揺動に追従する。即ち、静圧プレート３３は、研磨ヘッド２３の移動に伴い、平面視において、常に、研磨ヘッド２３を包含するように移動する。 The swing of the polishing head 23 is achieved by rotating the swing arm 24 around the swing axis as described above. Further, the static pressure plate 33 follows the swing of the polishing head 23. That is, the static pressure plate 33 always moves so as to include the polishing head 23 in a plan view as the polishing head 23 moves.

図７は、静圧プレートの移動機構の構成例を示す。ここでは、基板保持機構の図示を省略している。この例では、静圧プレート３３は、ボールねじ機構３６に連結されており、ボールねじ機構３６がモータ３５で駆動される。ボールねじ機構３６は、モータ３５の回転運動を直進運動に変換し、静圧プレート３３を往復移動させる。なお、静圧プレートの移動機構としては、モータ及びボールねじ機構の構成に限らず、ラックピニオン機構、エアシリンダ、ソレノイド等の任意の駆動機構を使用することができる。なお、研磨ヘッド２３が円弧状に揺動するのに対して、静圧プレート３３は直線運動するため、研磨ヘッド２３の領域を常に静圧プレート３３で包含できるように、静圧プレート３３は、研磨ヘッド２３の直径よりも大きな直径に形成することが好ましい。 FIG. 7 shows a configuration example of the moving mechanism of the static pressure plate. Here, the illustration of the substrate holding mechanism is omitted. In this example, the static pressure plate 33 is connected to the ball screw mechanism 36, and the ball screw mechanism 36 is driven by the motor 35. The ball screw mechanism 36 converts the rotational motion of the motor 35 into a linear motion and reciprocates the static pressure plate 33. The static pressure plate moving mechanism is not limited to the configuration of the motor and the ball screw mechanism, and any drive mechanism such as a rack and pinion mechanism, an air cylinder, or a solenoid can be used. Since the static pressure plate 33 moves linearly while the polishing head 23 swings in an arc shape, the static pressure plate 33 is provided so that the area of the polishing head 23 can always be included in the static pressure plate 33. It is preferable to form the polishing head 23 having a diameter larger than the diameter of the polishing head 23.

（第３実施形態）
図８は、第３実施形態に係る研磨ユニットの模式的な側面図である。ここでは、基板保持機構の図示を省略している。本実施形態の研磨ユニットは、小径の静圧プレート３３が省略され、大径の静圧プレート３１が移動可能に構成されている点で、第１実施形態に係る研磨ユニットと異なる。その他の構成は、第１実施形態と同様であるので、重複する説明は省略する。 (Third Embodiment)
FIG. 8 is a schematic side view of the polishing unit according to the third embodiment. Here, the illustration of the substrate holding mechanism is omitted. The polishing unit of the present embodiment is different from the polishing unit according to the first embodiment in that the small-diameter static pressure plate 33 is omitted and the large-diameter static pressure plate 31 is movable. Since other configurations are the same as those of the first embodiment, duplicate description will be omitted.

本実施形態では、静圧プレート３１は、研磨ヘッド２１に対応する位置と、研磨ヘッド２３に対応する位置との間で移動可能である。静圧プレート３１は、前述したように、研磨ヘッド２１に対応する位置では、平面視において、研磨ヘッド２１を包含するように配置される。また、静圧プレート３１は、研磨ヘッド２３に対応する位置では、平面視において、研磨ヘッド２３を包含するように配置される。研磨ヘッド２１と研磨ヘッド２３の寸法の関係から、大径の研磨ヘッド２１に対応する静圧プレート３１は、研磨ヘッド２３より十分大きい。研磨ヘッド２３の移動機構は、第２実施形態において、静圧プレート３３を往復移動させる移動機構として説明したものと同様の移動機構を採用することができる。つまり、モータ及びボールねじ機構、ラックピニオン機構、エアシリンダ、ソレノイド等の任意の駆動機構を使用することができる。本実施形態では、研磨ヘッド２１による研磨処理後に、研磨ヘッド２３の研磨処理を実行する。または、その逆の順番で行ってもよい。研磨ヘッド２１による研磨処理時には、静圧プレート３１を研磨ヘッド２１に対応する位置（対向する位置）に設置する。研磨ヘッド２１による荷重を静圧プレート３１で受けつつ、研磨ヘッド２１による研磨処理を実行する。そして、研磨ヘッド２３の研磨処理時には、静圧プレート３１を移動機構により研磨ヘッド２３に対応する位置（対向する
位置）に移動させる。研磨ヘッド２３による荷重を静圧プレート３１で受けつつ、研磨ヘッド２３による研磨処理を実行する。 In the present embodiment, the static pressure plate 31 can be moved between the position corresponding to the polishing head 21 and the position corresponding to the polishing head 23. As described above, the static pressure plate 31 is arranged so as to include the polishing head 21 in a plan view at a position corresponding to the polishing head 21. Further, the static pressure plate 31 is arranged so as to include the polishing head 23 in a plan view at a position corresponding to the polishing head 23. Due to the dimensional relationship between the polishing head 21 and the polishing head 23, the static pressure plate 31 corresponding to the large-diameter polishing head 21 is sufficiently larger than the polishing head 23. As the moving mechanism of the polishing head 23, the same moving mechanism as described as the moving mechanism for reciprocating the static pressure plate 33 in the second embodiment can be adopted. That is, any drive mechanism such as a motor and a ball screw mechanism, a rack and pinion mechanism, an air cylinder, and a solenoid can be used. In the present embodiment, the polishing process of the polishing head 23 is executed after the polishing process by the polishing head 21. Alternatively, the order may be reversed. During the polishing process by the polishing head 21, the static pressure plate 31 is installed at a position (opposing position) corresponding to the polishing head 21. While receiving the load from the polishing head 21 on the static pressure plate 31, the polishing process by the polishing head 21 is executed. Then, during the polishing process of the polishing head 23, the static pressure plate 31 is moved to a position (opposite position) corresponding to the polishing head 23 by a moving mechanism. While the static pressure plate 31 receives the load from the polishing head 23, the polishing process by the polishing head 23 is executed.

（第４実施形態）
図９は、第４実施形態に係る研磨ユニットの模式的な側面図である。図１０Ａ、図１０Ｂは、静圧プレートの平面図である。ここでは、基板保持機構の図示を省略している。本実施形態では、２つの研磨ヘッドに対して、共通の静圧プレート５０が設けられている点で、第１実施形態と異なる。その他の構成は、第１実施形態と同様であるので、重複する説明は省略する。 (Fourth Embodiment)
FIG. 9 is a schematic side view of the polishing unit according to the fourth embodiment. 10A and 10B are plan views of the static pressure plate. Here, the illustration of the substrate holding mechanism is omitted. The present embodiment is different from the first embodiment in that a common static pressure plate 50 is provided for the two polishing heads. Since other configurations are the same as those of the first embodiment, duplicate description will be omitted.

静圧プレート５０は、２つの流体供給ライン５３、５４に接続されており、各流体供給ライン５３、５４には流量制御バルブ５５、５６が設けられている。流量制御バルブ５５、５６は、制御装置１４からの信号によって流量が制御される。また、流体供給ライン５３、５４は、流体供給源５６に接続されており、流体供給源５６から圧力流体（液体又は気体）の供給を受ける。液体は、例えば、ＤＩＷ（純水）である。 The static pressure plate 50 is connected to two fluid supply lines 53 and 54, and each fluid supply line 53 and 54 is provided with flow control valves 55 and 56. The flow rate of the flow rate control valves 55 and 56 is controlled by a signal from the control device 14. Further, the fluid supply lines 53 and 54 are connected to the fluid supply source 56, and receive the supply of the pressure fluid (liquid or gas) from the fluid supply source 56. The liquid is, for example, DIW (pure water).

静圧プレート５０の支持面５１には、図１０Ａに示すように、研磨ヘッド２１に対応する領域において、複数の通孔又は流体噴出口３１ｃが形成されており、研磨ヘッド２３に対応する領域において、複数の通孔又は流体噴出口３２ｃが形成されている（図４Ｃ参照）。複数の流体噴出口３１ｃは、流体供給ライン５３に連通している。複数の流体噴出口３２ｃは、流体供給ライン５４に連通している。流体供給ライン５３から流体噴出口３１ｃを通って支持面５１に供給される流体によって、研磨ヘッド２１による荷重を受け、流体供給ライン５４から流体噴出口３２ｃを通って支持面５１に供給される流体によって、研磨ヘッド２３による荷重を受けるように構成されている。研磨ヘッド２１または研磨ヘッド２３の一方のみ使用する場合には、使用しない研磨ヘッドに対応する静圧プレートへの流体の供給を流量制御バルブ５５又は５６によって遮断してもよい。なお、流量制御バルブ５５、５６に代えて開閉バルブを使用してもよい。 As shown in FIG. 10A, a plurality of through holes or fluid ejection ports 31c are formed in the region corresponding to the polishing head 21 on the support surface 51 of the static pressure plate 50, and in the region corresponding to the polishing head 23. , A plurality of through holes or fluid outlets 32c are formed (see FIG. 4C). The plurality of fluid outlets 31c communicate with the fluid supply line 53. The plurality of fluid outlets 32c communicate with the fluid supply line 54. The fluid supplied from the fluid supply line 53 to the support surface 51 through the fluid ejection port 31c receives the load from the polishing head 21 and is supplied from the fluid supply line 54 to the support surface 51 through the fluid ejection port 32c. Is configured to receive the load of the polishing head 23. When only one of the polishing head 21 and the polishing head 23 is used, the supply of the fluid to the static pressure plate corresponding to the unused polishing head may be cut off by the flow rate control valve 55 or 56. An on-off valve may be used instead of the flow rate control valves 55 and 56.

小径の研磨ヘッド２３を揺動させる場合には、図１０Ｂに示すように、流体噴出口３２ｃを複数の領域Ａ１、Ａ２、Ａ３に形成し、各領域の流体噴出口を別々の流体供給ライン５４Ａ１、５４Ａ２、５４Ａ３（図示略）に接続し、各流体供給ラインに設けられた制御バルブを制御して、流体を各領域Ａ１、Ａ２、Ａ３の流体噴出口３２ｃに順次供給するようにしてもよい。また、全領域Ａ１、Ａ２、Ａ３（研磨ヘッド２３の可動範囲）の流体噴出口３２ｃに同時に流体を供給して、研磨ヘッド２３の揺動範囲全てをカバーするようにしてもよい。 When swinging the small-diameter polishing head 23, as shown in FIG. 10B, fluid outlets 32c are formed in a plurality of regions A1, A2, and A3, and fluid outlets in each region are provided as separate fluid supply lines 54A1. , 54A2, 54A3 (not shown), and the control valve provided in each fluid supply line may be controlled to sequentially supply the fluid to the fluid outlets 32c in each of the regions A1, A2, and A3. .. Further, the fluid may be simultaneously supplied to the fluid outlets 32c in the entire regions A1, A2, and A3 (movable range of the polishing head 23) to cover the entire swing range of the polishing head 23.

図１１は、研磨ユニットの基板保持機構の一例である。ここでは、図面の複雑化を避けるため、１つの研磨ヘッド及び静圧プレートのみ示すが、実際には、上述したように複数の研磨ヘッド及び静圧プレートが配置される。各研磨ヘッド及び各静圧プレートは、研磨位置においてウェハの外周縁側で、各チャック１−１１を避けるような形状とされている。この例では、ウェハＷの外周縁に複数配置された複数のチャック１−１１でウェハＷの外周縁をクランプすることによって、ウェハ１−１１が保持される。各チャック１−１１は、円筒状の基板回転機構１−１０の回転基台１−１６に固定されている。回転基台１６は、アンギュラコンタクト玉軸受２０、２０を介して、静止部材１４に回転自在に支持されている。中空モータ１−１２のロータが回転機台１６に固定され、ステータが静止部材１４に固定されている。中空モータ１−１２が回転すると、回転基台１６が静止部材１４に対して回転し、各チャック１−１１はウェハＷを保持した状態で回転する。このとき、各チャック１−１１は、ウェハＷの中心周りに公転する。なお、各チャック１−１１は、昇降機構１−３０により上昇され、ウェハＷを開放するように構成されている。図１１において、研磨ヘッド１−５０は、研磨具としての研磨テープ１−６１を備えている。研磨
ヘッド１−５０は、シャフト１−５１を介して揺動アーム１−５３の一端に連結されており、揺動アーム１−５３の他端は揺動軸１−５４に固定されている。揺動軸１−５４は軸回転機構１−５５に連結されている。この軸回転機構１−５５により揺動軸１−５４が駆動されると、研磨ヘッド１−５０が、退避位置（図２Ａ）と研磨位置（図２Ａ）との間を移動するようになっている。揺動軸１−５４には、研磨ヘッド１−５０を上下方向に移動させる昇降機構１−５６がさらに連結されている。この昇降機構１−５６は、揺動軸１−５４およびシャフト１−５１を介して研磨ヘッド１−５０を昇降させる。研磨ヘッド１−５０は、昇降機構１−５６によりウェハＷの上面に接触するまで下降される。昇降機構１−５６としては、エアシリンダ、またはサーボモータとボールねじとの組み合わせなどが使用される。静圧支持機構１−９０は、上述したような構成の静圧プレート１−９１を備え、静圧プレート１−９１が、昇降機構１−９８により昇降され、回転機構１−９９により回転される。なお、この構成の基板保持機構を採用する場合には、研磨ヘッド、静圧プレートは、研磨処理中に公転するチャック１−１１と干渉しない形状または配置をとる必要がある。 FIG. 11 is an example of the substrate holding mechanism of the polishing unit. Here, in order to avoid complication of the drawing, only one polishing head and static pressure plate are shown, but in reality, a plurality of polishing heads and static pressure plates are arranged as described above. Each polishing head and each static pressure plate are shaped so as to avoid each chuck 1-11 on the outer peripheral edge side of the wafer at the polishing position. In this example, the wafer 1-11 is held by clamping the outer peripheral edge of the wafer W with a plurality of chucks 1-11 arranged on the outer peripheral edge of the wafer W. Each chuck 1-11 is fixed to the rotation base 1-16 of the cylindrical substrate rotation mechanism 1-10. The rotary base 16 is rotatably supported by the stationary member 14 via the angular contact ball bearings 20 and 20. The rotor of the hollow motor 1-12 is fixed to the rotary machine base 16, and the stator is fixed to the stationary member 14. When the hollow motor 1-12 rotates, the rotation base 16 rotates with respect to the stationary member 14, and each chuck 1-11 rotates while holding the wafer W. At this time, each chuck 1-11 revolves around the center of the wafer W. Each chuck 1-11 is raised by the elevating mechanism 1-30 to open the wafer W. In FIG. 11, the polishing head 1-50 includes a polishing tape 1-61 as a polishing tool. The polishing head 1-50 is connected to one end of the swing arm 1-53 via a shaft 1-51, and the other end of the swing arm 1-53 is fixed to the swing shaft 1-54. The swing shaft 1-54 is connected to the shaft rotation mechanism 1-55. When the swing shaft 1-54 is driven by the shaft rotation mechanism 1-55, the polishing head 1-50 moves between the retracted position (FIG. 2A) and the polishing position (FIG. 2A). There is. An elevating mechanism 1-56 that moves the polishing head 1-50 in the vertical direction is further connected to the swing shaft 1-54. The elevating mechanism 1-56 elevates and elevates the polishing head 1-50 via the swing shaft 1-54 and the shaft 1-51. The polishing head 1-50 is lowered by the elevating mechanism 1-56 until it comes into contact with the upper surface of the wafer W. As the elevating mechanism 1-56, an air cylinder, a combination of a servomotor and a ball screw, or the like is used. The static pressure support mechanism 1-90 includes a static pressure plate 1-91 having the above-described configuration, and the static pressure plate 1-91 is raised and lowered by the elevating mechanism 1-98 and rotated by the rotating mechanism 1-99. .. When adopting the substrate holding mechanism having this configuration, the polishing head and the static pressure plate need to have a shape or arrangement that does not interfere with the chuck 1-11 that revolves during the polishing process.

図１２は、研磨ユニットの基板保持機構の一例である。この例では、ウェハＷの外周縁に配置された複数のローラ２−１１でウェハＷを挟持した状態で、各ローラ２−１１がその軸心周りに回転（自転）することにより、各ローラ２−１１は公転することなく、ウェハＷを回転させる。図中、２−１はウェハＷの裏面、２−２はウェハＷの表面である。基板保持機構２−１０は、ウェハＷの外周縁に接触可能な複数のローラ２−１１と、これらのローラ２−１１をそれぞれの軸心を中心に回転させるローラ回転機構２−１２とを備えている。一例では、４つのローラが設けられるが、３つ以下、５つ以上のローラを設けてもよい。一実施形態では、ローラ回転機構１２は、モータ、ベルト、プーリなどを備える。ローラ回転機構１２は、複数のローラ２−１１を同じ方向に同じ速度で回転させる。ウェハＷの研磨中、ウェハＷの外周縁は、複数のローラ２−１１によって挟持される。ウェハＷは、水平に保持され、ローラ２−１１の回転によってウェハＷはその軸心を中心に回転される。研磨ヘッド組立体２−４９は、研磨ヘッド２−５０を有している。研磨ヘッド２−５０は、前述した揺動アーム（図示省略）に連結されている。研磨ヘッド２−５０は、搖動アームに取り付けられたヘッドシャフト２−５１に連結されている。このヘッドシャフト２−５１は、研磨ヘッド２−５０をその軸心を中心として回転させるヘッド回転機構２−５８に連結されている。さらに、ヘッドシャフト２−５１には、研磨ヘッド２−５０に下向きの荷重を付与する荷重付与装置としてのエアシリンダ２−５７が連結されている。研磨ヘッド２−５０は、ウェハＷの面を研磨するための研磨具としての複数の研磨テープ２−６１等を備えている。一実施形態では、ヘッド回転機構５８は、モータ、ベルト、プーリ等の構成を備える。静圧プレート２−９０は、支持面２−９１に形成された複数の流体噴射口２−９４と、流体噴射口２−９４に接続された流体供給路２−９２とを備えている。流体供給路２−９２は、図示しない流体供給源に接続されている。また、リンス液供給ノズル２−２７が設けられており、リンス液供給ノズル２−２７は、リンス液をウェハＷの中心に供給し、リンス液は回転するウェハＷの遠心力によりウェハ面上を広がる。なお、図１２では、１つの研磨ヘッドを図示するが、上述したように研磨ヘッドは２つ（又はそれ以上）設けられる。 FIG. 12 is an example of the substrate holding mechanism of the polishing unit. In this example, each roller 2-11 rotates (rotates) around its axis while the wafer W is sandwiched between a plurality of rollers 2-11 arranged on the outer peripheral edge of the wafer W. -11 rotates the wafer W without revolving. In the figure, 2-1 is the back surface of the wafer W, and 2-2 is the front surface of the wafer W. The substrate holding mechanism 2-10 includes a plurality of rollers 2-11 that can come into contact with the outer peripheral edge of the wafer W, and a roller rotation mechanism 2-12 that rotates these rollers 2-11 around their respective axes. ing. In one example, four rollers are provided, but three or less, five or more rollers may be provided. In one embodiment, the roller rotation mechanism 12 includes a motor, a belt, a pulley, and the like. The roller rotation mechanism 12 rotates a plurality of rollers 2-11 in the same direction and at the same speed. During polishing of the wafer W, the outer peripheral edge of the wafer W is sandwiched by a plurality of rollers 2-11. The wafer W is held horizontally, and the rotation of the rollers 2-11 causes the wafer W to rotate about its axis. The polishing head assembly 2-49 has a polishing head 2-50. The polishing head 2-50 is connected to the above-mentioned swing arm (not shown). The polishing head 2-50 is connected to a head shaft 2-51 attached to the swing arm. The head shaft 2-51 is connected to a head rotation mechanism 2-58 that rotates the polishing head 2-50 about its axis. Further, an air cylinder 2-57 as a load applying device for applying a downward load to the polishing head 2-50 is connected to the head shaft 2-51. The polishing head 2-50 includes a plurality of polishing tapes 2-61 and the like as a polishing tool for polishing the surface of the wafer W. In one embodiment, the head rotation mechanism 58 includes a motor, a belt, a pulley, and the like. The static pressure plate 2-90 includes a plurality of fluid injection ports 2-94 formed on the support surface 2-91, and a fluid supply path 2-92 connected to the fluid injection port 2-94. The fluid supply path 2-92 is connected to a fluid supply source (not shown). Further, a rinse liquid supply nozzle 2-27 is provided, and the rinse liquid supply nozzle 2-27 supplies the rinse liquid to the center of the wafer W, and the rinse liquid moves on the wafer surface by the centrifugal force of the rotating wafer W. spread. Although one polishing head is shown in FIG. 12, two (or more) polishing heads are provided as described above.

この構成の基板保持機構を採用する場合には、固定された位置にある複数のローラ２−１１を避けるように予め研磨ヘッド、静圧プレートの形状または配置を設定すれば、ウェハＷの回転中に、研磨ヘッド、静圧プレートがチャック（ローラ）に干渉することはない。従って、研磨ヘッド、静圧プレートがウェハＷの外周縁に到達するように、又は、ウェハＷの外周縁を超えて半径方向外方まで延びるように配置することができる。 When the substrate holding mechanism having this configuration is adopted, if the shape or arrangement of the polishing head and the static pressure plate is set in advance so as to avoid a plurality of rollers 2-11 at fixed positions, the wafer W is rotating. In addition, the polishing head and static pressure plate do not interfere with the chuck (roller). Therefore, the polishing head and the static pressure plate can be arranged so as to reach the outer peripheral edge of the wafer W or extend beyond the outer peripheral edge of the wafer W to the outer edge in the radial direction.

図１３、図１４は、研磨ユニットの他の例である。この例では、ウェハＷの表面が上側、裏面が下側に配置された状態で、研磨テープ３−２４を備える研磨ヘッド３−１４が、
ウェハＷの裏面の外周部を研磨しつつ、研磨ヘッド移動機構３−３５により移動され、ウェハのべベル部を含む外周側領域全体を研磨する（図１４）。この例では、基板保持機構１２は、ウェハＷを真空吸着により保持する基板ステージ３−１７と、基板ステージ３−１７を回転させるモータ３−１９とから構成されている。研磨ヘッド３−１４は、研磨具としての研磨テープ３−２２を保持する複数のローラと、研磨テープ３−２２をウェハＷの裏面に押し付ける押圧部材３−２４と、押圧部材３−２４に押圧力を付与するアクチュエータとしてのエアシリンダ３−２５とを備えている。研磨テープ３−２２は、繰り出しリールから研磨ヘッド３−１４を経由して巻取りリールに所定の速度で送られる。研磨ヘッド３−１４は、研磨ヘッド移動機構３−３５に連結されている。この研磨ヘッド移動機構３−３５は、研磨ヘッド３−１４をウェハＷの半径方向外側に移動させるように構成されている。研磨ヘッド移動機構３−３５は、例えばボールねじとサーボモータとの組み合わせから構成される。基板ステージ１７に保持されたウェハＷの上方および下方には、ウェハＷに研磨液（純水）を供給する液体供給ノズルが配置されている。このような構成において、ウェハＷの表面の外周部（図１３の研磨ヘッド３−１４に対応する位置）に、上述した静圧プレート３１又は３３を配置することにより、ウェハＷの撓みを抑制することができる。この例では、静圧プレート３１又は３３は、ウェハＷの上方に配置される。なお、研磨ヘッド３−１４と静圧プレート３１又は３３の上下を入れ替えてもよい。即ち、研磨ヘッド３−１４をウェハＷの上方に配置し、静圧プレート３１又は３３をウェハＷの下方にするようにしてもよい。 13 and 14 are other examples of the polishing unit. In this example, the polishing head 3-14 provided with the polishing tape 3-24 has the front surface of the wafer W arranged on the upper side and the back surface on the lower side.
While polishing the outer peripheral portion of the back surface of the wafer W, it is moved by the polishing head moving mechanism 3-35 to polish the entire outer peripheral side region including the bevel portion of the wafer (FIG. 14). In this example, the substrate holding mechanism 12 is composed of a substrate stage 3-17 that holds the wafer W by vacuum suction and a motor 3-19 that rotates the substrate stage 3-17. The polishing head 3-14 is pressed against a plurality of rollers holding the polishing tape 3-22 as a polishing tool, a pressing member 3-24 that presses the polishing tape 3-22 against the back surface of the wafer W, and a pressing member 3-24. It is provided with an air cylinder 3-25 as an actuator for applying pressure. The polishing tape 3-22 is sent from the feeding reel to the take-up reel via the polishing head 3-14 at a predetermined speed. The polishing head 3-14 is connected to the polishing head moving mechanism 3-35. The polishing head moving mechanism 3-35 is configured to move the polishing head 3-14 outward in the radial direction of the wafer W. The polishing head moving mechanism 3-35 is composed of, for example, a combination of a ball screw and a servomotor. Liquid supply nozzles for supplying the polishing liquid (pure water) to the wafer W are arranged above and below the wafer W held on the substrate stage 17. In such a configuration, by arranging the static pressure plate 31 or 33 described above on the outer peripheral portion of the surface of the wafer W (position corresponding to the polishing head 3-14 in FIG. 13), the deflection of the wafer W is suppressed. be able to. In this example, the static pressure plate 31 or 33 is located above the wafer W. The top and bottom of the polishing head 3-14 and the static pressure plate 31 or 33 may be exchanged. That is, the polishing head 3-14 may be arranged above the wafer W, and the static pressure plate 31 or 33 may be arranged below the wafer W.

上記実施形態から少なくとも以下の技術的思想が把握される。
第１形態によれば、 研磨具を基板の第１面に摺接させて前記第１面を研磨する第１研磨ヘッドと、 前記第１研磨ヘッドよりも小径の第２研磨ヘッドであって、研磨具を前記基板の前記第１面に摺接させて前記第１面を研磨する前記第２研磨ヘッドと、 前記第１研磨ヘッド及び前記第２研磨ヘッドにそれぞれ対応して、前記基板の前記第１面とは反対側の第２面側から流体圧によって前記基板を支持する基板支持機構と、を備えた基板処理装置が提供される。 At least the following technical ideas are grasped from the above embodiment.
According to the first aspect, there is a first polishing head that grinds the first surface by sliding a polishing tool against the first surface of the substrate, and a second polishing head having a diameter smaller than that of the first polishing head. The second polishing head for polishing the first surface by sliding a polishing tool against the first surface of the substrate, and the first polishing head and the second polishing head corresponding to the above-mentioned substrate. A substrate processing apparatus including a substrate support mechanism for supporting the substrate by fluid pressure from the second surface side opposite to the first surface is provided.

この形態によれば、第１研磨ヘッドにより基板の第１面の全体を研磨するとともに、より小径の第２研磨ヘッドにより基板の第１面の研磨レートの低い部分を補足研磨することができるので、基板を均一に研磨することができる。また、第１研磨ヘッド及び第２研磨ヘッドにそれぞれ対応して、基板の第２面側から基板を支持するため、第１研磨ヘッド及び第２研磨ヘッドによる押し付け力に応じて適切な範囲で、基板を反対側から支持することができる。従って、第１及び第２研磨ヘッドに対応する領域以外において、不要な支持力を基板に加えることを抑制できる。また、流体の使用量を低減できる。 According to this form, the entire first surface of the substrate can be polished by the first polishing head, and the portion of the first surface of the substrate having a low polishing rate can be supplementarily polished by the second polishing head having a smaller diameter. , The substrate can be polished uniformly. Further, since the substrate is supported from the second surface side of the substrate corresponding to the first polishing head and the second polishing head, respectively, within an appropriate range according to the pressing force of the first polishing head and the second polishing head. The substrate can be supported from the opposite side. Therefore, it is possible to suppress the application of unnecessary bearing capacity to the substrate in areas other than the regions corresponding to the first and second polishing heads. In addition, the amount of fluid used can be reduced.

形態２によれば、形態１の基板処理装置において、 前記基板支持機構は、 前記第１研磨ヘッドに対応して前記基板を支持する第１静圧プレートと、 前記第２研磨ヘッドに対応して前記基板を支持する第２静圧プレートと、を有する。
この形態によれば、第１及び第２研磨ヘッドに対応して第１及び第２静圧プレートをそれぞれ設けるため、簡易な構成により、第１研磨ヘッド及び第２研磨ヘッドによる押し付け力に応じて適切な範囲で、基板を反対側から支持することができる。 According to the second aspect, in the substrate processing apparatus of the first aspect, the substrate support mechanism corresponds to the first static pressure plate that supports the substrate corresponding to the first polishing head and the second polishing head. It has a second static pressure plate that supports the substrate.
According to this form, since the first and second static pressure plates are provided corresponding to the first and second polishing heads, respectively, with a simple configuration, according to the pressing force by the first polishing head and the second polishing head. To the extent appropriate, the substrate can be supported from the opposite side.

形態３によれば、形態２の基板処理装置において、 前記第２研磨ヘッドは、研磨処理中に揺動しつつ前記基板を研磨し、 前記第２静圧プレートは、前記第２研磨ヘッドに追従して移動することができるように構成されている。
この形態によれば、小径の第２研磨ヘッドを揺動させることにより、基板の研磨レートの低い部分において、更に研磨レートを向上させることができる。この結果、研磨時間を短縮できる。また、第２静圧プレートが第２研磨ヘッドに追従して移動するため、第２研磨ヘッドが押し付けられる基板の領域を第２静圧プレートによって適切に支持することが
できる。 According to the third aspect, in the substrate processing apparatus of the second aspect, the second polishing head polishes the substrate while swinging during the polishing process, and the second static pressure plate follows the second polishing head. It is configured so that it can be moved.
According to this form, by swinging the second polishing head having a small diameter, the polishing rate can be further improved in the portion where the polishing rate of the substrate is low. As a result, the polishing time can be shortened. Further, since the second static pressure plate moves following the second polishing head, the region of the substrate on which the second polishing head is pressed can be appropriately supported by the second static pressure plate.

形態４によれば、形態１の基板処理装置において、 前記基板処理機構は、 前記第１研磨ヘッドに対応する領域と、前記第２研磨ヘッドに対応する領域との間で移動可能に構成された静圧プレートを有する。
この形態によれば、共通の静圧プレートを使用して、第１研磨ヘッドに対応する基板の支持と、第２研磨ヘッドに対応する基板の支持とを実現できる。 According to the fourth aspect, in the substrate processing apparatus of the first aspect, the substrate processing mechanism is configured to be movable between the region corresponding to the first polishing head and the region corresponding to the second polishing head. It has a static pressure plate.
According to this form, it is possible to realize the support of the substrate corresponding to the first polishing head and the support of the substrate corresponding to the second polishing head by using a common static pressure plate.

形態５によれば、形態１の基板処理装置において、 前記基板処理機構は、 前記第１研磨ヘッド及び前記第２研磨ヘッドに対応して前記基板を支持する静圧プレートと、 前記静圧プレートの前記第１研磨ヘッドに対応する領域に流体を供給する第１流体ラインと、
前記静圧プレートの前記第２研磨ヘッドに対応する領域に流体を供給する第２流体ラインを有する。
この形態によれば、共通の静圧プレートを移動させることなく、第１及び第２流体ラインから第１及び第２研磨ヘッドに対応する領域にそれぞれ流体を供給することにより、第１研磨ヘッドに対応する基板の支持と、第２研磨ヘッドに対応する基板の支持とを適切な範囲で実現できる。 According to the fifth aspect, in the substrate processing apparatus of the first aspect, the substrate processing mechanism includes a hydrostatic plate that supports the substrate corresponding to the first polishing head and the second polishing head, and the hydrostatic plate. A first fluid line that supplies fluid to the region corresponding to the first polishing head,
It has a second fluid line that supplies fluid to the region of the static pressure plate that corresponds to the second polishing head.
According to this embodiment, the fluid is supplied from the first and second fluid lines to the regions corresponding to the first and second polishing heads, respectively, without moving the common static pressure plate, thereby causing the first polishing head. Support for the corresponding substrate and support for the substrate corresponding to the second polishing head can be realized within an appropriate range.

形態６によれば、形態５の基板処理装置において、 前記第２研磨ヘッドは、研磨処理中に揺動しつつ前記基板を研磨し、 前記静圧プレートは、前記流体を前記基板の前記第２面上に供給する位置を、前記第２研磨ヘッドに追従して変更できるように構成されている。
この形態によれば、小径の第２研磨ヘッドを揺動させることにより、基板の研磨レートの低い部分において、更に研磨レートを向上させることができる。この結果、研磨時間を短縮できる。また、流体の供給位置を第２研磨ヘッドに追従して移動するため、第２研磨ヘッドが押し付けられる基板の領域を流体によって適切に支持することができる。 According to the sixth embodiment, in the substrate processing apparatus of the fifth embodiment, the second polishing head oscillates during the polishing process to polish the substrate, and the static pressure plate uses the fluid to transfer the fluid to the second substrate. The position to be supplied on the surface can be changed following the second polishing head.
According to this form, by swinging the second polishing head having a small diameter, the polishing rate can be further improved in the portion where the polishing rate of the substrate is low. As a result, the polishing time can be shortened. Further, since the fluid supply position moves following the second polishing head, the region of the substrate on which the second polishing head is pressed can be appropriately supported by the fluid.

形態７によれば、形態１乃至６の何れかの基板処理装置において、 前記第２研磨ヘッドは、前記第１研磨ヘッドよりも前記基板の半径方向外方において、前記基板を研磨するように配置される。
この形態によれば、研磨レートが低くなる傾向がある基板の外周部において、補足研磨を行うことによって、研磨後の基板の面内均一性を向上できる。 According to the seventh aspect, in the substrate processing apparatus according to any one of the first to sixth aspects, the second polishing head is arranged so as to polish the substrate at a position outside the radial direction of the substrate with respect to the first polishing head. Will be done.
According to this form, the in-plane uniformity of the substrate after polishing can be improved by performing supplementary polishing on the outer peripheral portion of the substrate where the polishing rate tends to be low.

形態８によれば、形態１乃至７の何れかの基板処理装置において、 前記基板の前記第１面は、デバイスが形成されていない面であり、 前記研磨処理は、前記基板の前記第２面にレジストが塗布された後、露光処理前に実行される研磨処理である。
この形態によれば、非デバイス面の面内均一性が、その後のデバイス面に対する露光工程に与える影響を抑制することができる。 According to the eighth aspect, in the substrate processing apparatus according to any one of the first to seventh aspects, the first surface of the substrate is a surface on which no device is formed, and the polishing process is performed on the second surface of the substrate. This is a polishing process that is performed after the resist is applied to the surface and before the exposure process.
According to this form, the influence of the in-plane uniformity of the non-device surface on the subsequent exposure process on the device surface can be suppressed.

形態９によれば、基板を保持して前記基板を回転させる基板保持機構であって、前記基板の周縁部に接触可能する複数のローラを備え、各ローラがその軸心を中心に回転可能に構成されている、前記基板保持機構と、 研磨具を前記基板の第１面に摺接させて前記第１面を研磨する第１研磨ヘッドと、 前記第１研磨ヘッドよりも小径の第２研磨ヘッドであって、研磨具を基板の第１面に摺接させて前記第１面を研磨する前記第２研磨ヘッドと、を備えた基板処理装置が提供される。
この形態によれば、基板を保持するローラが基板とともに回転しない。そのため、基板の端部まで、或いは、基板の径方向外側まで研磨ヘッドを配置することができる。その結果、基板の端部まで研磨することができる。更に、第１研磨ヘッドにより基板全体を研磨するとともに、より小径の第２研磨ヘッドにより基板の研磨レートの低い部分を補足研磨
することができるので、基板を均一に研磨することができる。 According to the ninth aspect, it is a substrate holding mechanism that holds a substrate and rotates the substrate, and includes a plurality of rollers that can come into contact with the peripheral edge of the substrate, and each roller can rotate about its axis. The substrate holding mechanism, the first polishing head for polishing the first surface by sliding a polishing tool against the first surface of the substrate, and the second polishing having a diameter smaller than that of the first polishing head are configured. Provided is a substrate processing apparatus including a second polishing head, which is a head and in which a polishing tool is brought into sliding contact with a first surface of a substrate to polish the first surface.
According to this form, the rollers holding the substrate do not rotate with the substrate. Therefore, the polishing head can be arranged up to the edge of the substrate or to the outside in the radial direction of the substrate. As a result, the edge of the substrate can be polished. Further, the entire substrate can be polished by the first polishing head, and the portion having a low polishing rate of the substrate can be supplementarily polished by the second polishing head having a smaller diameter, so that the substrate can be uniformly polished.

形態１０によれば、第１研磨ヘッドの研磨具を基板の第１面に摺接させつつ、前記第１研磨ヘッドよりも小径の第２研磨ヘッドの研磨具を前記基板の前記第１面に摺接させて、前記基板の前記第１面を研磨すること、 前記第１研磨ヘッド及び前記第２研磨ヘッドに対応して、前記基板の前記第１面とは反対側の第２面側から前記基板を支持すること、を含む、基板処理方法が提供される。
この形態によれば、形態１と同様の作用効果を奏する。 According to the tenth aspect, while the polishing tool of the first polishing head is in sliding contact with the first surface of the substrate, the polishing tool of the second polishing head having a diameter smaller than that of the first polishing head is placed on the first surface of the substrate. Polishing the first surface of the substrate by sliding contact, corresponding to the first polishing head and the second polishing head, from the second surface side opposite to the first surface of the substrate. A substrate processing method is provided that includes supporting the substrate.
According to this form, the same action and effect as in the first form can be obtained.

形態１１によれば、基板の周縁部に複数のローラを接触させ、各ローラをその軸心周りに回転させることによって、前記基板を回転させること、 前記基板の回転中に、第１研磨ヘッド、及び前記第１研磨ヘッドよりも小径の第２研磨ヘッドによって、前記基板の第１面を研磨すること、を含む、基板処理方法が提供される。
この形態によれば、形態９と同様の作用効果を奏する。 According to the eleventh aspect, the substrate is rotated by bringing a plurality of rollers into contact with the peripheral edge of the substrate and rotating each roller around the axis thereof. A substrate processing method is provided, which comprises polishing the first surface of the substrate with a second polishing head having a diameter smaller than that of the first polishing head.
According to this form, the same action and effect as that of the form 9 is obtained.

形態１２によれば、基板処理装置の制御方法をコンピュータに実行させるためのプログラムを格納した不揮発性の記憶媒体であって、 第１研磨ヘッドの研磨具を基板の第１面に摺接させつつ、前記第１研磨ヘッドよりも小径の第２研磨ヘッドの研磨具を前記基板の前記第１面に摺接させて、前記基板の前記第１面を研磨すること、 前記研磨処理中、前記第１研磨ヘッド及び前記第２研磨ヘッドに対応して、前記基板の前記第１面とは反対側の第２面側から前記基板を支持すること、をコンピュータに実行させるためのプログラムを格納した記憶媒体に関する。
この形態によれば、形態１と同様の作用効果を奏する。 According to the twelfth aspect, it is a non-volatile storage medium in which a program for causing a computer to execute a control method of the substrate processing apparatus is stored, and the polishing tool of the first polishing head is brought into sliding contact with the first surface of the substrate. A polishing tool of a second polishing head having a diameter smaller than that of the first polishing head is brought into sliding contact with the first surface of the substrate to polish the first surface of the substrate. A storage that stores a program for causing a computer to support the substrate from a second surface side opposite to the first surface of the substrate corresponding to the 1 polishing head and the 2nd polishing head. Regarding the medium.
According to this form, the same action and effect as in the first form can be obtained.

形態１３によれば、基板処理装置の制御方法をコンピュータに実行させるためのプログラムを格納した不揮発性の記憶媒体であって、 基板の周縁部に複数のローラを接触させ、各ローラをその軸心周りに回転させることによって、前記基板を回転させること、 前記基板の回転中に、第１研磨ヘッド、及び前記第１研磨ヘッドよりも小径の第２研磨ヘッドによって、前記基板の第１面を研磨すること、をコンピュータに実行させるためのプログラムを格納した記憶媒体に関する。
この形態によれば、形態９と同様の作用効果を奏する。 According to the thirteenth aspect, it is a non-volatile storage medium in which a program for causing a computer to execute a control method of a substrate processing apparatus is stored, and a plurality of rollers are brought into contact with the peripheral edge of the substrate, and each roller is brought into its axis. The substrate is rotated by rotating it around, and during the rotation of the substrate, the first surface of the substrate is polished by the first polishing head and the second polishing head having a diameter smaller than that of the first polishing head. It relates to a storage medium containing a program for causing a computer to execute.
According to this form, the same action and effect as that of the form 9 is obtained.

以上、いくつかの例に基づいて本発明の実施形態について説明してきたが、上記した発明の実施形態は、本発明の理解を容易にするためのものであり、本発明を限定するものではない。本発明は、その趣旨を逸脱することなく、変更、改良され得るとともに、本発明には、その均等物が含まれることはもちろんである。また、上述した課題の少なくとも一部を解決できる範囲、または、効果の少なくとも一部を奏する範囲において、特許請求の範囲および明細書に記載された各構成要素の任意の組み合わせ、または、省略が可能である。 Although the embodiments of the present invention have been described above based on some examples, the above-described embodiments of the present invention are for facilitating the understanding of the present invention and do not limit the present invention. .. The present invention can be modified and improved without departing from the spirit thereof, and it goes without saying that the present invention includes an equivalent thereof. In addition, any combination or omission of the claims and the components described in the specification is possible within the range in which at least a part of the above-mentioned problems can be solved, or in the range in which at least a part of the effect is exhibited. Is.

１ 基板処理システム
２ ロードアンロード部
３ フロントロード部
４ 搬送ロボット
５ ウェハステージ
６ 搬送ロボット
７ ウェハステージ
８ 研磨ユニット
９ 研磨ユニット
１０ 搬送ロボット
１１ 洗浄ユニット
１２ 搬送ロボット
１３ 乾燥ユニット
１４ 制御装置
２１ 研磨ヘッド
２２ 揺動アーム
２３ 研磨ヘッド
２４ 揺動アーム
３１ 静圧プレート
３２ 支持面
３３ 静圧プレート
３４ 支持面
４１ 流体
３１ａ 流体供給路
３１ｂ ポケット
３１ｃ 流体噴出口
３２ｃ 流体噴出口
３５ モータ
３６ ボールねじ機構
５０ 静圧プレート
５１ 支持面
５３ 流体ライン
５４ 流体ライン
５５ 流量制御バルブ
５６ 流量制御バルブ 1 Substrate processing system 2 Load / unload part 3 Front load part 4 Transfer robot 5 Wafer stage 6 Transfer robot 7 Wafer stage 8 Polishing unit 9 Polishing unit 10 Transfer robot 11 Cleaning unit 12 Transfer robot 13 Drying unit 14 Control device 21 Polishing head 22 Swing arm 23 Polishing head 24 Swing arm 31 Static pressure plate 32 Support surface 33 Static pressure plate 34 Support surface 41 Fluid 31a Fluid supply path 31b Pocket 31c Fluid spout 32c Fluid spout 35 Motor 36 Ball screw mechanism 50 Static pressure plate 51 Support surface 53 Fluid line 54 Fluid line 55 Flow control valve 56 Flow control valve

Claims (9)

研磨具を基板の第１面に摺接させて前記第１面を研磨する第１研磨ヘッドと、
前記第１研磨ヘッドよりも小径の第２研磨ヘッドであって、研磨具を前記基板の前記第１面に摺接させて前記第１面を研磨する前記第２研磨ヘッドと、
前記第１研磨ヘッド及び前記第２研磨ヘッドにそれぞれ対応して、前記基板の前記第１面とは反対側の第２面側から流体圧によって前記基板を支持する基板支持機構と、
を備え、
前記基板支持機構は、
前記第１研磨ヘッドに対応する領域と、前記第２研磨ヘッドに対応する領域との間で移動可能に構成された静圧プレートを有する、
基板処理装置。 A first polishing head that grinds the first surface by sliding the polishing tool against the first surface of the substrate, and
A second polishing head having a diameter smaller than that of the first polishing head, the second polishing head for polishing the first surface by sliding a polishing tool against the first surface of the substrate.
A substrate support mechanism that supports the substrate by fluid pressure from the second surface side of the substrate opposite to the first surface, respectively, corresponding to the first polishing head and the second polishing head.
Equipped with a,
The substrate support mechanism is
It has a static pressure plate configured to be movable between a region corresponding to the first polishing head and a region corresponding to the second polishing head.
Board processing equipment. 研磨具を基板の第１面に摺接させて前記第１面を研磨する第１研磨ヘッドと、 A first polishing head that grinds the first surface by sliding the polishing tool against the first surface of the substrate, and
前記第１研磨ヘッドよりも小径の第２研磨ヘッドであって、研磨具を前記基板の前記第１面に摺接させて前記第１面を研磨する前記第２研磨ヘッドと、 A second polishing head having a diameter smaller than that of the first polishing head, the second polishing head for polishing the first surface by sliding a polishing tool against the first surface of the substrate.
前記第１研磨ヘッド及び前記第２研磨ヘッドにそれぞれ対応して、前記基板の前記第１面とは反対側の第２面側から流体圧によって前記基板を支持する基板支持機構と、 A substrate support mechanism that supports the substrate by fluid pressure from the second surface side of the substrate opposite to the first surface, respectively, corresponding to the first polishing head and the second polishing head.
を備え、With
前記基板支持機構は、 The substrate support mechanism is
前記第１研磨ヘッド及び前記第２研磨ヘッドに対応して前記基板を支持する静圧プレートと、 A static pressure plate that supports the substrate corresponding to the first polishing head and the second polishing head, and
前記静圧プレートの前記第１研磨ヘッドに対応する領域に流体を供給する第１流体ラインと、 A first fluid line that supplies fluid to the region of the static pressure plate corresponding to the first polishing head,
前記静圧プレートの前記第２研磨ヘッドに対応する領域に流体を供給する第２流体ラインと、を有する It has a second fluid line that supplies fluid to the region of the static pressure plate corresponding to the second polishing head.
基板処理装置。Board processing equipment. 請求項２に記載の基板処理装置において、
前記第２研磨ヘッドは、研磨処理中に揺動しつつ前記基板を研磨し、
前記静圧プレートは、前記流体を前記基板の前記第２面上に供給する位置を、前記第２研磨ヘッドに追従して変更できるように構成されている、基板処理装置。 In the substrate processing apparatus according to claim 2,
The second polishing head polishes the substrate while swinging during the polishing process.
The static pressure plate is a substrate processing apparatus configured so that a position where the fluid is supplied onto the second surface of the substrate can be changed following the second polishing head. 請求項１乃至３の何れかに記載の基板処理装置において、
前記第２研磨ヘッドは、前記第１研磨ヘッドよりも前記基板の半径方向外方において、前記基板を研磨するように配置される、基板処理装置。 In the substrate processing apparatus according to any one of claims 1 to 3,
The second polishing head is a substrate processing apparatus that is arranged so as to polish the substrate at a radial direction outer side of the substrate than the first polishing head. 請求項１乃至４の何れかに記載の基板処理装置において、
前記基板の前記第１面は、デバイスが形成されていない面であり、
前記研磨処理は、前記基板の前記第２面にレジストが塗布された後、露光処理前に実行される研磨処理である、基板処理装置。 In the substrate processing apparatus according to any one of claims 1 to 4,
The first surface of the substrate is a surface on which no device is formed.
The substrate processing apparatus, which is a polishing process executed before the exposure process after the resist is applied to the second surface of the substrate. 第１研磨ヘッドの研磨具を基板の第１面に摺接させて前記第１面を研磨すること、
前記第１研磨ヘッドよりも小径の第２研磨ヘッドの研磨具を前記基板の前記第１面に摺接させて、前記基板の前記第１面を研磨すること、
前記第１研磨ヘッドに対応する領域と、前記第２研磨ヘッドに対応する領域との間で移動可能に構成された静圧プレートを有する基板支持機構によって、前記第１研磨ヘッド及び前記第２研磨ヘッドに対応して、前記基板の前記第１面とは反対側の第２面側から前記基板を支持することであって、前記第１研磨ヘッドによる研磨処理時に前記静圧プレートを前記第１研磨ヘッドに対応する位置に移動させ、前記第２研磨ヘッドによる研磨処理時に前記静圧プレートを前記第２研磨ヘッドに対応する位置に移動させること、
を含む、基板処理方法。 The polishing tool of the first polishing head by sliding contact with the first surface of the substrate to polish the first surface,
Polishing the first surface of the substrate by sliding a polishing tool of a second polishing head having a diameter smaller than that of the first polishing head to the first surface of the substrate.
The first polishing head and the second polishing are provided by a substrate support mechanism having a static pressure plate configured to be movable between a region corresponding to the first polishing head and a region corresponding to the second polishing head. Corresponding to the head, the substrate is supported from the second surface side opposite to the first surface of the substrate, and the static pressure plate is subjected to the first polishing process by the first polishing head. To move the static pressure plate to a position corresponding to the second polishing head and to move the static pressure plate to a position corresponding to the second polishing head during the polishing process by the second polishing head .
Substrate processing methods, including. 第１研磨ヘッドの研磨具を基板の第１面に摺接させつつ、前記第１研磨ヘッドよりも小径の第２研磨ヘッドの研磨具を前記基板の前記第１面に摺接させて、前記基板の前記第１面を研磨すること、 While the polishing tool of the first polishing head is in sliding contact with the first surface of the substrate, the polishing tool of the second polishing head having a diameter smaller than that of the first polishing head is brought into sliding contact with the first surface of the substrate. Polishing the first surface of the substrate,
前記第１研磨ヘッドよりも小径の第２研磨ヘッドの研磨具を前記基板の前記第１面に摺接させて、前記基板の前記第１面を研磨すること、 Polishing the first surface of the substrate by sliding a polishing tool of a second polishing head having a diameter smaller than that of the first polishing head to the first surface of the substrate.
前記第１研磨ヘッド及び前記第２研磨ヘッドに対応して前記基板を支持する静圧プレートと、前記静圧プレートの前記第１研磨ヘッドに対応する領域に流体を供給する第１流体ラインと、前記静圧プレートの前記第２研磨ヘッドに対応する領域に流体を供給する第２流体ラインとを有する基板支持機構によって、前記第１研磨ヘッド及び前記第２研磨ヘッドに対応して、前記基板の前記第１面とは反対側の第２面側から前記基板を支持すること、 A static pressure plate that supports the substrate corresponding to the first polishing head and the second polishing head, and a first fluid line that supplies a fluid to a region of the static pressure plate corresponding to the first polishing head. A substrate support mechanism having a second fluid line that supplies fluid to a region of the static pressure plate corresponding to the second polishing head allows the substrate to correspond to the first polishing head and the second polishing head. Supporting the substrate from the second surface side opposite to the first surface.
を含む、基板処理方法。Substrate processing methods, including. 基板処理装置の制御方法をコンピュータに実行させるためのプログラムを格納した不揮発性の記憶媒体であって、
第１研磨ヘッドの研磨具を基板の第１面に摺接させて前記第１面を研磨すること、
前記第１研磨ヘッドよりも小径の第２研磨ヘッドの研磨具を前記基板の前記第１面に摺接させて、前記基板の前記第１面を研磨すること、
前記研磨処理中、前記第１研磨ヘッドに対応する領域と、前記第２研磨ヘッドに対応する領域との間で移動可能に構成された静圧プレートを有する基板支持機構によって、前記第１研磨ヘッド及び前記第２研磨ヘッドに対応して、前記基板の前記第１面とは反対側の第２面側から前記基板を支持することであって、前記第１研磨ヘッドによる研磨処理時に前記静圧プレートを前記第１研磨ヘッドに対応する位置に移動させ、前記第２研磨ヘッドによる研磨処理時に前記静圧プレートを前記第２研磨ヘッドに対応する位置に移動させること、
をコンピュータに実行させるためのプログラムを格納した記憶媒体。 It is a non-volatile storage medium that stores a program for causing a computer to execute a control method for a substrate processing device.
The polishing tool of the first polishing head by sliding contact with the first surface of the substrate to polish the first surface,
Polishing the first surface of the substrate by sliding a polishing tool of a second polishing head having a diameter smaller than that of the first polishing head to the first surface of the substrate.
During the polishing process, the first polishing head is provided by a substrate support mechanism having a static pressure plate configured to be movable between a region corresponding to the first polishing head and a region corresponding to the second polishing head. And, corresponding to the second polishing head, the substrate is supported from the second surface side opposite to the first surface of the substrate, and the static pressure is applied during the polishing process by the first polishing head. Moving the plate to a position corresponding to the first polishing head, and moving the static pressure plate to a position corresponding to the second polishing head during the polishing process by the second polishing head .
A storage medium that contains a program that allows a computer to execute a program. 基板処理装置の制御方法をコンピュータに実行させるためのプログラムを格納した不揮発性の記憶媒体であって、 It is a non-volatile storage medium that stores a program for causing a computer to execute a control method for a substrate processing device.
第１研磨ヘッドの研磨具を基板の第１面に摺接させつつ、前記第１研磨ヘッドよりも小径の第２研磨ヘッドの研磨具を前記基板の前記第１面に摺接させて、前記基板の前記第１面を研磨すること、 While the polishing tool of the first polishing head is in sliding contact with the first surface of the substrate, the polishing tool of the second polishing head having a diameter smaller than that of the first polishing head is brought into sliding contact with the first surface of the substrate. Polishing the first surface of the substrate,
前記研磨処理中、前記第１研磨ヘッド及び前記第２研磨ヘッドに対応して前記基板を支持する静圧プレートと、前記静圧プレートの前記第１研磨ヘッドに対応する領域に流体を供給する第１流体ラインと、前記静圧プレートの前記第２研磨ヘッドに対応する領域に流体を供給する第２流体ラインとを有する基板支持機構によって、前記第１研磨ヘッド及び前記第２研磨ヘッドに対応して、前記基板の前記第１面とは反対側の第２面側から前記基板を支持すること、 During the polishing process, a fluid is supplied to the static pressure plate that supports the substrate corresponding to the first polishing head and the second polishing head, and the region corresponding to the first polishing head of the static pressure plate. Corresponding to the first polishing head and the second polishing head by a substrate support mechanism having one fluid line and a second fluid line for supplying fluid to the region corresponding to the second polishing head of the static pressure plate. The substrate is supported from the second surface side opposite to the first surface of the substrate.
をコンピュータに実行させるためのプログラムを格納した記憶媒体。A storage medium that contains a program that allows a computer to execute a program.
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