JP2014089790A5 - - Google Patents

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Publication number
JP2014089790A5
JP2014089790A5 JP2012240610A JP2012240610A JP2014089790A5 JP 2014089790 A5 JP2014089790 A5 JP 2014089790A5 JP 2012240610 A JP2012240610 A JP 2012240610A JP 2012240610 A JP2012240610 A JP 2012240610A JP 2014089790 A5 JP2014089790 A5 JP 2014089790A5
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JP
Japan
Prior art keywords
voltage
replica
semiconductor device
assist voltage
response
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012240610A
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English (en)
Japanese (ja)
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JP2014089790A (ja
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Publication date
Application filed filed Critical
Priority to JP2012240610A priority Critical patent/JP2014089790A/ja
Priority claimed from JP2012240610A external-priority patent/JP2014089790A/ja
Publication of JP2014089790A publication Critical patent/JP2014089790A/ja
Publication of JP2014089790A5 publication Critical patent/JP2014089790A5/ja
Pending legal-status Critical Current

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JP2012240610A 2012-10-31 2012-10-31 半導体装置 Pending JP2014089790A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012240610A JP2014089790A (ja) 2012-10-31 2012-10-31 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012240610A JP2014089790A (ja) 2012-10-31 2012-10-31 半導体装置

Publications (2)

Publication Number Publication Date
JP2014089790A JP2014089790A (ja) 2014-05-15
JP2014089790A5 true JP2014089790A5 (cg-RX-API-DMAC10.html) 2015-10-01

Family

ID=50791560

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012240610A Pending JP2014089790A (ja) 2012-10-31 2012-10-31 半導体装置

Country Status (1)

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JP (1) JP2014089790A (cg-RX-API-DMAC10.html)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109498060B (zh) * 2018-12-25 2021-04-13 西北大学 基于ctlm与超声波技术的乳腺成像设备及方法
US10811088B2 (en) * 2019-03-12 2020-10-20 Qualcomm Incorporated Access assist with wordline adjustment with tracking cell
JP7196040B2 (ja) * 2019-03-14 2022-12-26 株式会社東芝 半導体記憶装置
CN114566202B (zh) * 2022-04-26 2022-08-02 长鑫存储技术有限公司 一种感测放大器的测试方法、装置、存储装置及存储系统
CN118887982B (zh) * 2023-04-25 2025-10-03 长鑫存储技术有限公司 字线驱动电路以及存储器

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002109887A (ja) * 2000-09-29 2002-04-12 Hitachi Ltd 半導体集積回路
JP2003059273A (ja) * 2001-08-09 2003-02-28 Hitachi Ltd 半導体記憶装置
JP4439167B2 (ja) * 2002-08-30 2010-03-24 株式会社ルネサステクノロジ 半導体記憶装置
JP4373154B2 (ja) * 2003-07-18 2009-11-25 株式会社半導体エネルギー研究所 メモリ回路およびそのメモリ回路を有する表示装置、電子機器
JP5328386B2 (ja) * 2009-01-15 2013-10-30 ルネサスエレクトロニクス株式会社 半導体集積回路装置およびその動作方法
JP2012123877A (ja) * 2010-12-09 2012-06-28 Toshiba Corp 半導体記憶装置

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