JP2014086551A - 撮像装置及びカメラ - Google Patents

撮像装置及びカメラ Download PDF

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Publication number
JP2014086551A
JP2014086551A JP2012234067A JP2012234067A JP2014086551A JP 2014086551 A JP2014086551 A JP 2014086551A JP 2012234067 A JP2012234067 A JP 2012234067A JP 2012234067 A JP2012234067 A JP 2012234067A JP 2014086551 A JP2014086551 A JP 2014086551A
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JP
Japan
Prior art keywords
imaging device
photoelectric conversion
semiconductor substrate
refractive index
conversion unit
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Pending
Application number
JP2012234067A
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English (en)
Japanese (ja)
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JP2014086551A5 (enExample
Inventor
Takehiko Soda
岳彦 曽田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2012234067A priority Critical patent/JP2014086551A/ja
Priority to US14/046,491 priority patent/US9490289B2/en
Publication of JP2014086551A publication Critical patent/JP2014086551A/ja
Publication of JP2014086551A5 publication Critical patent/JP2014086551A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

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  • Solid State Image Pick-Up Elements (AREA)
JP2012234067A 2012-10-23 2012-10-23 撮像装置及びカメラ Pending JP2014086551A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012234067A JP2014086551A (ja) 2012-10-23 2012-10-23 撮像装置及びカメラ
US14/046,491 US9490289B2 (en) 2012-10-23 2013-10-04 Image sensing device and camera

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012234067A JP2014086551A (ja) 2012-10-23 2012-10-23 撮像装置及びカメラ

Publications (2)

Publication Number Publication Date
JP2014086551A true JP2014086551A (ja) 2014-05-12
JP2014086551A5 JP2014086551A5 (enExample) 2015-12-03

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012234067A Pending JP2014086551A (ja) 2012-10-23 2012-10-23 撮像装置及びカメラ

Country Status (2)

Country Link
US (1) US9490289B2 (enExample)
JP (1) JP2014086551A (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014120610A (ja) * 2012-12-17 2014-06-30 Olympus Corp 固体撮像素子
WO2016063727A1 (ja) * 2014-10-20 2016-04-28 ソニー株式会社 固体撮像素子及び電子機器
WO2018116697A1 (ja) * 2016-12-20 2018-06-28 パナソニックＩｐマネジメント株式会社 固体撮像装置およびその製造方法
JP2020068289A (ja) * 2018-10-24 2020-04-30 キヤノン株式会社 光電変換装置、撮像システム、移動体、および積層用の半導体チップ
CN112310132A (zh) * 2019-07-26 2021-02-02 佳能株式会社 半导体装置和使用物体识别的设备
WO2021215337A1 (ja) * 2020-04-20 2021-10-28 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および電子機器
US11902704B2 (en) 2016-05-30 2024-02-13 Sony Corporation Apparatus and method for video-audio processing, and program for separating an object sound corresponding to a selected video object

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6161258B2 (ja) 2012-11-12 2017-07-12 キヤノン株式会社 固体撮像装置およびその製造方法ならびにカメラ
JP6162999B2 (ja) 2013-04-15 2017-07-12 キヤノン株式会社 固体撮像装置およびカメラ
JP2014225536A (ja) 2013-05-15 2014-12-04 キヤノン株式会社 固体撮像装置及びカメラ
JP6541361B2 (ja) 2015-02-05 2019-07-10 キヤノン株式会社 固体撮像装置
JP2016201397A (ja) * 2015-04-07 2016-12-01 ソニー株式会社 固体撮像素子および電子機器
US9768213B2 (en) 2015-06-03 2017-09-19 Canon Kabushiki Kaisha Solid-state image sensor and camera
US10014333B2 (en) * 2015-08-26 2018-07-03 Semiconductor Components Industries, Llc Back-side illuminated pixels with interconnect layers
JP6738200B2 (ja) 2016-05-26 2020-08-12 キヤノン株式会社 撮像装置
US11463644B2 (en) 2018-08-31 2022-10-04 Canon Kabushiki Kaisha Imaging device, imaging system, and drive method of imaging device
KR102589608B1 (ko) * 2018-10-22 2023-10-16 삼성전자주식회사 이미지 센서 및 이의 제조 방법
CN109524428B (zh) * 2018-11-13 2020-09-25 上海奕瑞光电子科技股份有限公司 X射线探测单元、探测器及探测系统
CN121001425A (zh) * 2020-12-29 2025-11-21 李学能 半导体装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006261372A (ja) * 2005-03-17 2006-09-28 Sony Corp 固体撮像素子および固体撮像素子の製造方法および画像撮影装置
JP2008147333A (ja) * 2006-12-08 2008-06-26 Sony Corp 固体撮像装置、その製造方法および撮像装置
US20100203665A1 (en) * 2009-02-09 2010-08-12 Samsung Electronics Co., Ltd. Methods of manufacturing an image sensor having an air gap
US20110241145A1 (en) * 2010-04-06 2011-10-06 Victor Lenchenkov Backside illumination image sensors with reflective light guides

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5810575B2 (ja) 2011-03-25 2015-11-11 ソニー株式会社 固体撮像装置、および、その製造方法、電子機器
US8680454B2 (en) * 2011-12-01 2014-03-25 Omnivision Technologies, Inc. Backside-illuminated (BSI) pixel including light guide

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006261372A (ja) * 2005-03-17 2006-09-28 Sony Corp 固体撮像素子および固体撮像素子の製造方法および画像撮影装置
JP2008147333A (ja) * 2006-12-08 2008-06-26 Sony Corp 固体撮像装置、その製造方法および撮像装置
US20100203665A1 (en) * 2009-02-09 2010-08-12 Samsung Electronics Co., Ltd. Methods of manufacturing an image sensor having an air gap
US20110241145A1 (en) * 2010-04-06 2011-10-06 Victor Lenchenkov Backside illumination image sensors with reflective light guides

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014120610A (ja) * 2012-12-17 2014-06-30 Olympus Corp 固体撮像素子
WO2016063727A1 (ja) * 2014-10-20 2016-04-28 ソニー株式会社 固体撮像素子及び電子機器
US10236311B2 (en) 2014-10-20 2019-03-19 Sony Semiconductor Solutions Corporation Solid-state imaging element and electronic device to improve quality of an image
US11902704B2 (en) 2016-05-30 2024-02-13 Sony Corporation Apparatus and method for video-audio processing, and program for separating an object sound corresponding to a selected video object
US12256169B2 (en) 2016-05-30 2025-03-18 Sony Group Corporation Apparatus and method for video-audio processing, and program for separating an object sound corresponding to a selected video object
WO2018116697A1 (ja) * 2016-12-20 2018-06-28 パナソニックＩｐマネジメント株式会社 固体撮像装置およびその製造方法
JP2020068289A (ja) * 2018-10-24 2020-04-30 キヤノン株式会社 光電変換装置、撮像システム、移動体、および積層用の半導体チップ
US11843014B2 (en) 2018-10-24 2023-12-12 Canon Kabushiki Kaisha Photoelectric conversion apparatus having metal portion, imaging system, movable body, and semiconductor chip for stacking
CN112310132A (zh) * 2019-07-26 2021-02-02 佳能株式会社 半导体装置和使用物体识别的设备
US11417694B2 (en) 2019-07-26 2022-08-16 Canon Kabushiki Kaisha Semiconductor device and equipment
WO2021215337A1 (ja) * 2020-04-20 2021-10-28 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および電子機器
JPWO2021215337A1 (enExample) * 2020-04-20 2021-10-28

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Publication number Publication date
US9490289B2 (en) 2016-11-08
US20140111663A1 (en) 2014-04-24

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