JP2014070015A - 誘電体組成物及びこれを用いた積層セラミック電子部品 - Google Patents
誘電体組成物及びこれを用いた積層セラミック電子部品 Download PDFInfo
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Abstract
【解決手段】ABO3で表現されるペロブスカイト構造を有する誘電体グレイン10を含み、上記誘電体グレインの中心からグレイン境界(grain boundary)b方向に仮想の直線を引いたとき、上記誘電体グレインの中心cから0.75〜0.95に該当する領域での希土類元素の含量がBサイトを占めるイオン100at%に対して0.5〜2.5at%である誘電体組成物。誘電体組成物を用いた積層セラミック電子部品は、信頼性に優れ、且つ高い誘電率を確保することができる効果がある。
【選択図】図1
Description
2 シェル
10 誘電体グレイン
11 誘電体層
21 第1の内部電極
22 第2の内部電極
31、32 第1及び第2の外部電極
100 積層セラミックキャパシタ
110 セラミック本体
c 誘電体グレインの中心
b 誘電体グレインの境界
Claims (9)
- ABO3で表現されるペロブスカイト構造を有する誘電体グレインを含み、前記誘電体グレインの中心からグレイン境界(grain boundary)方向に仮想の直線を引いたとき、前記誘電体グレインの中心から前記グレイン境界までの距離を1としたときに、前記誘電体グレインの中心からの距離が0.75〜0.95に該当する領域での希土類元素の含量はBサイトを占めるイオン100at%に対して0.5〜2.5at%である、誘電体組成物。
- 前記誘電体グレインの中心から0.75〜0.95に該当する領域での希土類元素の含量は、前記誘電体グレインの中心での希土類元素の含量に対して0.05〜2.0倍である、請求項1に記載の誘電体組成物。
- 前記Aは、バリウム(Ba)、ストロンチウム(Sr)、鉛(Pb)及びカルシウム(Ca)からなる群から選択された一つ以上を含む、請求項1または2に記載の誘電体組成物。
- 前記Bは、チタニウム(Ti)及びジルコニウム(Zr)からなる群から選択された一つ以上を含む、請求項1から3の何れか1項に記載の誘電体組成物。
- 前記希土類元素は、3価イオンを含む、請求項1から4の何れか1項に記載の誘電体組成物。
- 前記希土類元素は、スカンジウム(Sc)、イットリウム(Y)、ランタン(La)、アクチニウム(Ac)、セリウム(Ce)、プラセオジミウム(Pr)、ネオジム(Nd)、プロメチウム(Pm)、サマリウム(Sm)、ユウロピウム(Eu)、ガドリニウム(Gd)、テルビウム(Tb)、ジスプロシウム(Dy)、ホルミウム(Ho)、エルビウム(Er)、ツリウム(Tm)、イッテルビウム(Yb)、及びルテニウム(Lu)からなる群から選択された一つ以上である、請求項1から5の何れか1項に記載の誘電体組成物。
- 前記誘電体グレインは、BamTiO3(0.995≦m≦1.010)、(Ba1−XCax)m(Ti1−yZry)O3(0.995≦m≦1.010、0≦x≦0.10、0<y≦0.20)、Bam(Ti1−xZrx)O3(0.995≦m≦1.010、x≦0.10)又は前記希土類元素のうち一つ又はそれ以上が一部固溶されたBamTiO3(0.995≦m≦1.010)、(Ba1−XCax)m(Ti1−yZry)O3(0.995≦m≦1.010、0≦x≦0.10、0<y≦0.20)、Bam(Ti1−xZrx)O3(0.995≦m≦1.010、x≦0.10)からなる群から選択された一つ以上を含む、請求項1から6の何れか1項に記載の誘電体組成物。
- 平均厚さが0.48μm以下の誘電体層を含むセラミック本体と、
前記セラミック本体内で前記誘電体層を介して対向するように配置される内部電極と、
を含み、
前記誘電体層は、請求項1から7の何れか1項に記載の誘電体組成物を含む、積層セラミック電子部品。 - 前記誘電体層の誘電率は4000以上である、請求項8に記載の積層セラミック電子部品。
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KR101823162B1 (ko) * | 2012-10-05 | 2018-01-29 | 삼성전기주식회사 | 유전체 조성물 및 이를 이용한 적층 세라믹 전자부품 |
KR101952846B1 (ko) * | 2012-10-05 | 2019-02-27 | 삼성전기주식회사 | 유전체 조성물 및 이를 이용한 적층 세라믹 전자부품 |
KR101922876B1 (ko) * | 2016-11-09 | 2018-11-28 | 삼성전기 주식회사 | 유전체 조성물 및 이를 포함하는 적층 세라믹 커패시터 |
KR102449359B1 (ko) * | 2017-08-28 | 2022-09-30 | 삼성전기주식회사 | 유전체 파우더 및 이를 이용한 적층형 세라믹 전자부품 |
KR102483896B1 (ko) | 2017-12-19 | 2022-12-30 | 삼성전자주식회사 | 세라믹 유전체 및 그 제조 방법, 세라믹 전자 부품 및 전자장치 |
KR102585981B1 (ko) | 2018-03-28 | 2023-10-05 | 삼성전자주식회사 | 유전체, 및 이를 포함하는 적층형 커패시터, 및 전자 소자 |
KR102194706B1 (ko) * | 2019-02-15 | 2020-12-23 | 삼성전기주식회사 | 적층형 커패시터 |
KR20190116110A (ko) * | 2019-06-14 | 2019-10-14 | 삼성전기주식회사 | 유전체 자기 조성물 및 이를 포함하는 적층 세라믹 커패시터 |
JP7167955B2 (ja) * | 2020-03-24 | 2022-11-09 | 株式会社村田製作所 | 積層セラミック電子部品 |
KR20220088099A (ko) * | 2020-12-18 | 2022-06-27 | 삼성전기주식회사 | 세라믹 전자 부품 |
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US9382162B2 (en) | 2016-07-05 |
JP2015044735A (ja) | 2015-03-12 |
KR101376924B1 (ko) | 2014-03-20 |
CN103708821B (zh) | 2017-08-01 |
CN103708821A (zh) | 2014-04-09 |
US20140092525A1 (en) | 2014-04-03 |
US20150098166A1 (en) | 2015-04-09 |
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