JP2014068014A5 - - Google Patents
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- Publication number
- JP2014068014A5 JP2014068014A5 JP2013197964A JP2013197964A JP2014068014A5 JP 2014068014 A5 JP2014068014 A5 JP 2014068014A5 JP 2013197964 A JP2013197964 A JP 2013197964A JP 2013197964 A JP2013197964 A JP 2013197964A JP 2014068014 A5 JP2014068014 A5 JP 2014068014A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- electrode
- layer
- interlayer insulating
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010410 layer Substances 0.000 claims 66
- 229910052751 metal Inorganic materials 0.000 claims 41
- 239000002184 metal Substances 0.000 claims 37
- 239000004065 semiconductor Substances 0.000 claims 35
- 229910045601 alloy Inorganic materials 0.000 claims 31
- 239000000956 alloy Substances 0.000 claims 31
- 239000011229 interlayer Substances 0.000 claims 25
- 239000000758 substrate Substances 0.000 claims 10
- 239000013078 crystal Substances 0.000 claims 6
- 238000000926 separation method Methods 0.000 claims 6
- 230000004888 barrier function Effects 0.000 claims 4
- 229910001020 Au alloy Inorganic materials 0.000 claims 2
- 239000010949 copper Substances 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- 229910000881 Cu alloy Inorganic materials 0.000 claims 1
- 229910017566 Cu-Mn Inorganic materials 0.000 claims 1
- 229910002482 Cu–Ni Inorganic materials 0.000 claims 1
- 229910017871 Cu—Mn Inorganic materials 0.000 claims 1
- 229910000914 Mn alloy Inorganic materials 0.000 claims 1
- 229910000990 Ni alloy Inorganic materials 0.000 claims 1
- 229910001080 W alloy Inorganic materials 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2012-0106707 | 2012-09-25 | ||
| KR1020120106707A KR101992352B1 (ko) | 2012-09-25 | 2012-09-25 | 반도체 장치 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014068014A JP2014068014A (ja) | 2014-04-17 |
| JP2014068014A5 true JP2014068014A5 (enExample) | 2015-11-12 |
| JP5865881B2 JP5865881B2 (ja) | 2016-02-17 |
Family
ID=50338075
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013197964A Active JP5865881B2 (ja) | 2012-09-25 | 2013-09-25 | 半導体装置及びその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US9153522B2 (enExample) |
| JP (1) | JP5865881B2 (enExample) |
| KR (1) | KR101992352B1 (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9673132B2 (en) * | 2012-04-27 | 2017-06-06 | Taiwan Semiconductor Manufacting Company, Ltd. | Interconnection structure with confinement layer |
| KR20140011137A (ko) * | 2012-07-17 | 2014-01-28 | 삼성전자주식회사 | Tsv 구조를 구비한 집적회로 소자 및 그 제조 방법 |
| KR20150052175A (ko) * | 2012-09-05 | 2015-05-13 | 리써치트라이앵글인스티튜트 | 돌출부들을 갖는 컨택 패드들을 이용하는 전자 소자들 및 제조 방법들 |
| US9514986B2 (en) * | 2013-08-28 | 2016-12-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Device with capped through-substrate via structure |
| US9865523B2 (en) | 2014-01-17 | 2018-01-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Robust through-silicon-via structure |
| US9583417B2 (en) * | 2014-03-12 | 2017-02-28 | Invensas Corporation | Via structure for signal equalization |
| KR102320821B1 (ko) | 2014-09-11 | 2021-11-02 | 삼성전자주식회사 | 반도체 패키지 |
| DE102014115105B4 (de) | 2014-10-09 | 2023-06-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Halbleitereinrichtung und Verfahren zur Herstellung einer Halbleitereinrichtung |
| JP2016139648A (ja) | 2015-01-26 | 2016-08-04 | 株式会社東芝 | 半導体装置及びその製造方法 |
| US10074594B2 (en) * | 2015-04-17 | 2018-09-11 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure and manufacturing method thereof |
| US9761509B2 (en) | 2015-12-29 | 2017-09-12 | United Microelectronics Corp. | Semiconductor device with throgh-substrate via and method for fabrication the semiconductor device |
| US10050139B2 (en) | 2016-06-24 | 2018-08-14 | Infineon Technologies Ag | Semiconductor device including a LDMOS transistor and method |
| US9875933B2 (en) * | 2016-06-24 | 2018-01-23 | Infineon Technologies Ag | Substrate and method including forming a via comprising a conductive liner layer and conductive plug having different microstructures |
| US10622284B2 (en) | 2016-06-24 | 2020-04-14 | Infineon Technologies Ag | LDMOS transistor and method |
| US10242932B2 (en) | 2016-06-24 | 2019-03-26 | Infineon Technologies Ag | LDMOS transistor and method |
| US10432172B2 (en) | 2016-09-01 | 2019-10-01 | Samsung Electro-Mechanics Co., Ltd. | Bulk acoustic filter device and method of manufacturing the same |
| US10276528B2 (en) * | 2017-07-18 | 2019-04-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semicondcutor device and manufacturing method thereof |
| KR102542614B1 (ko) * | 2017-10-30 | 2023-06-15 | 삼성전자주식회사 | 이미지 센서 |
| JP7219598B2 (ja) * | 2018-11-27 | 2023-02-08 | 新光電気工業株式会社 | 配線基板及びその製造方法 |
| US11398408B2 (en) * | 2019-09-24 | 2022-07-26 | Advanced Semiconductor Engineering, Inc. | Semiconductor substrate with trace connected to via at a level within a dielectric layer |
| WO2021257392A1 (en) * | 2020-06-17 | 2021-12-23 | Tokyo Electron Limited | Method for area selective deposition using a surface cleaning process |
Family Cites Families (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5262354A (en) * | 1992-02-26 | 1993-11-16 | International Business Machines Corporation | Refractory metal capped low resistivity metal conductor lines and vias |
| US5300813A (en) * | 1992-02-26 | 1994-04-05 | International Business Machines Corporation | Refractory metal capped low resistivity metal conductor lines and vias |
| MY144573A (en) * | 1998-09-14 | 2011-10-14 | Ibiden Co Ltd | Printed circuit board and method for its production |
| US6884335B2 (en) * | 2003-05-20 | 2005-04-26 | Novellus Systems, Inc. | Electroplating using DC current interruption and variable rotation rate |
| US7019402B2 (en) | 2003-10-17 | 2006-03-28 | International Business Machines Corporation | Silicon chip carrier with through-vias using laser assisted chemical vapor deposition of conductor |
| US6979625B1 (en) * | 2003-11-12 | 2005-12-27 | Advanced Micro Devices, Inc. | Copper interconnects with metal capping layer and selective copper alloys |
| US8084866B2 (en) | 2003-12-10 | 2011-12-27 | Micron Technology, Inc. | Microelectronic devices and methods for filling vias in microelectronic devices |
| JP4800585B2 (ja) | 2004-03-30 | 2011-10-26 | ルネサスエレクトロニクス株式会社 | 貫通電極の製造方法、シリコンスペーサーの製造方法 |
| US7232513B1 (en) * | 2004-06-29 | 2007-06-19 | Novellus Systems, Inc. | Electroplating bath containing wetting agent for defect reduction |
| WO2006016678A1 (ja) * | 2004-08-12 | 2006-02-16 | Nec Corporation | 半導体装置及びその製造方法 |
| US7946331B2 (en) * | 2005-06-14 | 2011-05-24 | Cufer Asset Ltd. L.L.C. | Pin-type chip tooling |
| JP4552770B2 (ja) | 2005-06-21 | 2010-09-29 | パナソニック電工株式会社 | 半導体基板への貫通配線の形成方法 |
| JP4581864B2 (ja) | 2005-06-21 | 2010-11-17 | パナソニック電工株式会社 | 半導体基板への貫通配線の形成方法 |
| JP2007005404A (ja) | 2005-06-21 | 2007-01-11 | Matsushita Electric Works Ltd | 半導体基板への貫通配線の形成方法 |
| US7528006B2 (en) | 2005-06-30 | 2009-05-05 | Intel Corporation | Integrated circuit die containing particle-filled through-silicon metal vias with reduced thermal expansion |
| US7772116B2 (en) * | 2005-09-01 | 2010-08-10 | Micron Technology, Inc. | Methods of forming blind wafer interconnects |
| US7892972B2 (en) * | 2006-02-03 | 2011-02-22 | Micron Technology, Inc. | Methods for fabricating and filling conductive vias and conductive vias so formed |
| JP5231733B2 (ja) | 2006-11-27 | 2013-07-10 | パナソニック株式会社 | 貫通孔配線構造およびその形成方法 |
| US7939941B2 (en) | 2007-06-27 | 2011-05-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Formation of through via before contact processing |
| US7973416B2 (en) * | 2008-05-12 | 2011-07-05 | Texas Instruments Incorporated | Thru silicon enabled die stacking scheme |
| US7678696B2 (en) | 2008-08-08 | 2010-03-16 | International Business Machines Corporation | Method of making through wafer vias |
| KR20100021856A (ko) | 2008-08-18 | 2010-02-26 | 삼성전자주식회사 | 관통 전극을 갖는 반도체장치의 형성방법 및 관련된 장치 |
| US8097953B2 (en) | 2008-10-28 | 2012-01-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Three-dimensional integrated circuit stacking-joint interface structure |
| US20100200408A1 (en) * | 2009-02-11 | 2010-08-12 | United Solar Ovonic Llc | Method and apparatus for the solution deposition of high quality oxide material |
| US8610283B2 (en) * | 2009-10-05 | 2013-12-17 | International Business Machines Corporation | Semiconductor device having a copper plug |
| KR101302564B1 (ko) | 2009-10-28 | 2013-09-02 | 한국전자통신연구원 | 비아 형성 방법 및 이를 이용하는 적층 칩 패키지의 제조 방법 |
| KR20110050957A (ko) * | 2009-11-09 | 2011-05-17 | 삼성전자주식회사 | 반도체 소자의 관통 비아 콘택 및 그 형성 방법 |
| US8304863B2 (en) * | 2010-02-09 | 2012-11-06 | International Business Machines Corporation | Electromigration immune through-substrate vias |
| JP2011216867A (ja) * | 2010-03-17 | 2011-10-27 | Tokyo Electron Ltd | 薄膜の形成方法 |
| KR101692434B1 (ko) | 2010-06-28 | 2017-01-18 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
| JP5504147B2 (ja) * | 2010-12-21 | 2014-05-28 | 株式会社荏原製作所 | 電気めっき方法 |
| JP2012151435A (ja) | 2010-12-27 | 2012-08-09 | Elpida Memory Inc | 半導体装置の製造方法 |
| EP2756524A4 (en) * | 2011-09-13 | 2015-06-03 | Adesto Technologies Corp | RESISTANCE CONTROL DEVICES WITH ALLOYED ELECTRODES AND METHOD OF MANUFACTURE THEREOF |
| US8785790B2 (en) * | 2011-11-10 | 2014-07-22 | Invensas Corporation | High strength through-substrate vias |
| US9269612B2 (en) * | 2011-11-22 | 2016-02-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mechanisms of forming damascene interconnect structures |
| KR20140011137A (ko) * | 2012-07-17 | 2014-01-28 | 삼성전자주식회사 | Tsv 구조를 구비한 집적회로 소자 및 그 제조 방법 |
-
2012
- 2012-09-25 KR KR1020120106707A patent/KR101992352B1/ko active Active
-
2013
- 2013-09-16 US US14/028,523 patent/US9153522B2/en active Active
- 2013-09-25 JP JP2013197964A patent/JP5865881B2/ja active Active
-
2015
- 2015-07-24 US US14/809,159 patent/US9679829B2/en active Active
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