JP2014063950A - 配線基板の製造方法 - Google Patents
配線基板の製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 37
- 238000005530 etching Methods 0.000 claims abstract description 66
- 238000007788 roughening Methods 0.000 claims abstract description 7
- 229920005989 resin Polymers 0.000 claims description 126
- 239000011347 resin Substances 0.000 claims description 126
- 238000000034 method Methods 0.000 claims description 54
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 23
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 22
- 229910052802 copper Inorganic materials 0.000 claims description 14
- 239000010949 copper Substances 0.000 claims description 14
- 229910052759 nickel Inorganic materials 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 7
- 230000003746 surface roughness Effects 0.000 claims description 7
- 239000000654 additive Substances 0.000 claims description 6
- 230000007423 decrease Effects 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 350
- 238000007747 plating Methods 0.000 description 22
- 239000004065 semiconductor Substances 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 239000011889 copper foil Substances 0.000 description 8
- 238000001039 wet etching Methods 0.000 description 7
- 229910000679 solder Inorganic materials 0.000 description 6
- 238000009713 electroplating Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 238000007772 electroless plating Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 3
- 239000012286 potassium permanganate Substances 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/4682—Manufacture of core-less build-up multilayer circuits on a temporary carrier or on a metal foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4857—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/095—Conductive through-holes or vias
- H05K2201/096—Vertically aligned vias, holes or stacked vias
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/01—Tools for processing; Objects used during processing
- H05K2203/0147—Carriers and holders
- H05K2203/0152—Temporary metallic carrier, e.g. for transferring material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/108—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by semi-additive methods; masks therefor
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
【解決手段】支持体10の上に、エッチングストップ層12を介してn層(nは2以上の整数)のビルドアップ中間体5を形成する工程と、支持体10を除去してエッチングストップ層12を露出させる工程と、エッチングストップ層12を除去して最下の配線層21を露出させる工程と、ビルドアップ中間体5の両面に絶縁層35,36を形成する工程と、両面側の第2絶縁層35,36に、配線層21、25に到達するビアホールVH5、VH6をそれぞれ形成する工程と、配線層21を被覆する絶縁層36の露出面を粗化する工程と、ビアホールVH6を介して配線層21に接続される配線層27を絶縁層36の露出面に形成すると共に、ビアホールVH5を介して配線層25に接続される配線層26を絶縁層35の上に形成する工程とを含む。
【選択図】図7
Description
図3〜図8は第1実施形態の配線基板の製造方法を示す断面図である。
図10〜図13は第2実施形態の配線基板の製造方法を示す断面図である。
Claims (9)
- 支持体の上に、エッチングストップ層を介して第1配線層を形成する工程と、前記第1配線層の上に第1絶縁層を形成する工程と、前記第1絶縁層に、前記第1配線層に到達する第1ビアホールを形成する工程と、前記第1ビアホールを介して前記第1配線層に接続される第2配線層を前記第1絶縁層の上に形成する工程とを含む方法により、n層(nは2以上の整数)のビルドアップ中間体を形成する工程と、
前記支持体を除去してエッチングストップ層を露出させる工程と、
前記エッチングストップ層を除去して前記第1配線層を露出させる工程と、
前記ビルドアップ中間体の両面に第2絶縁層をそれぞれ形成する工程と、
前記両面側の第2絶縁層に、前記第1配線層及びn層目の前記配線層に到達する第2ビアホールをそれぞれ形成する工程と、
前記第1配線層を被覆する前記第2絶縁層の露出面を粗化する工程と、
前記第2ビアホールを介して前記第1配線層に接続される第3配線層を前記第2絶縁層の露出面に形成すると共に、前記第2ビアホールを介して前記n層目の配線層に接続される第4配線層を前記第2絶縁層の上に形成する工程とを有することを特徴とする配線基板の製造方法。 - 前記第1配線層を形成する工程において、
前記エッチングストップ層は、前記支持体上の全面に形成されることを特徴とする請求項1に記載の配線基板の製造方法。 - 前記第1配線層を形成する工程において、
前記エッチングストップ層は、前記第1配線層と同一パターンで形成されることを特徴とする請求項1に記載の配線基板の製造方法。
配線基板。 - 前記第2絶縁層の露出面を粗化する工程において、
前記第2絶縁層の露出面の表面粗さは、前記第1絶縁層の上面の表面粗さと同一範囲に設定されることを特徴とする請求項1乃至3のいずれか一項に記載の配線基板の製造方法。 - 前記第2絶縁層の露出面を粗化する工程は、デスミア処理によって行われることを特徴とする請求項1乃至4のいずれか一項に記載の配線基板の製造方法。
- 前記第3配線層は、セミアディティブ法によって形成されることを特徴とする請求項1乃至5のいずれか一項に記載の配線基板の製造方法。
- 前記第1ビアホールは、前記第2絶縁層の表面から厚み方向に向けて直径が小さくなるテーパー形状であり、前記第1配線層の下面側に配置される前記第2ビアホールの形状は前記第1ビアホールと逆のテーパー形状となっていることを特徴とする請求項1乃至6のいずれか一項に記載の配線基板の製造方法。
- 前記支持体及び前記第1配線層は銅から形成され、前記エッチングストップ層はニッケルから形成されることを特徴とする1乃至7のいずれか一項に記載の配線基板の製造方法。
- 前記第1、第2絶縁層は、樹脂から形成されることを特徴とする請求項1乃至8のいずれか一項に記載の配線基板の製造方法。
Priority Applications (2)
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JP2012209398A JP6092555B2 (ja) | 2012-09-24 | 2012-09-24 | 配線基板の製造方法 |
US14/027,648 US9006103B2 (en) | 2012-09-24 | 2013-09-16 | Method of manufacturing wiring substrate |
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JP2012209398A JP6092555B2 (ja) | 2012-09-24 | 2012-09-24 | 配線基板の製造方法 |
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JP2014063950A true JP2014063950A (ja) | 2014-04-10 |
JP2014063950A5 JP2014063950A5 (ja) | 2015-09-24 |
JP6092555B2 JP6092555B2 (ja) | 2017-03-08 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI650240B (zh) * | 2016-02-18 | 2019-02-11 | 三井金屬鑛業股份有限公司 | 印刷電路板之製造方法 |
WO2024043196A1 (ja) * | 2022-08-26 | 2024-02-29 | Mgcエレクトロテクノ株式会社 | 積層体、及び、コアレス基板の製造方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10096542B2 (en) * | 2017-02-22 | 2018-10-09 | Advanced Semiconductor Engineering, Inc. | Substrate, semiconductor package structure and manufacturing process |
CN110997313A (zh) * | 2017-10-26 | 2020-04-10 | 三井金属矿业株式会社 | 极薄铜箔和带载体的极薄铜箔、以及印刷电路板的制造方法 |
TWI751554B (zh) * | 2020-05-12 | 2022-01-01 | 台灣愛司帝科技股份有限公司 | 影像顯示器及其拼接式電路承載與控制模組 |
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JP2003008228A (ja) * | 2001-06-22 | 2003-01-10 | Ibiden Co Ltd | 多層プリント配線板およびその製造方法 |
JP2007059821A (ja) * | 2005-08-26 | 2007-03-08 | Shinko Electric Ind Co Ltd | 配線基板の製造方法 |
JP2011129808A (ja) * | 2009-12-21 | 2011-06-30 | Shinko Electric Ind Co Ltd | 配線基板及びその製造方法 |
JP2011146477A (ja) * | 2010-01-13 | 2011-07-28 | Shinko Electric Ind Co Ltd | 配線基板及びその製造方法、並びに半導体パッケージ |
JP2011199077A (ja) * | 2010-03-19 | 2011-10-06 | Ngk Spark Plug Co Ltd | 多層配線基板の製造方法 |
JP2013522917A (ja) * | 2010-04-06 | 2013-06-13 | インテル コーポレイション | コアレスパッケージを備えた電磁干渉シールド用の金属充填ダイバックサイドフィルムの形成方法 |
Family Cites Families (2)
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JP5092547B2 (ja) | 2007-05-30 | 2012-12-05 | 凸版印刷株式会社 | 印刷配線板の製造方法 |
JP5092662B2 (ja) | 2007-10-03 | 2012-12-05 | 凸版印刷株式会社 | 印刷配線板の製造方法 |
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- 2012-09-24 JP JP2012209398A patent/JP6092555B2/ja active Active
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- 2013-09-16 US US14/027,648 patent/US9006103B2/en active Active
Patent Citations (6)
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JP2003008228A (ja) * | 2001-06-22 | 2003-01-10 | Ibiden Co Ltd | 多層プリント配線板およびその製造方法 |
JP2007059821A (ja) * | 2005-08-26 | 2007-03-08 | Shinko Electric Ind Co Ltd | 配線基板の製造方法 |
JP2011129808A (ja) * | 2009-12-21 | 2011-06-30 | Shinko Electric Ind Co Ltd | 配線基板及びその製造方法 |
JP2011146477A (ja) * | 2010-01-13 | 2011-07-28 | Shinko Electric Ind Co Ltd | 配線基板及びその製造方法、並びに半導体パッケージ |
JP2011199077A (ja) * | 2010-03-19 | 2011-10-06 | Ngk Spark Plug Co Ltd | 多層配線基板の製造方法 |
JP2013522917A (ja) * | 2010-04-06 | 2013-06-13 | インテル コーポレイション | コアレスパッケージを備えた電磁干渉シールド用の金属充填ダイバックサイドフィルムの形成方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI650240B (zh) * | 2016-02-18 | 2019-02-11 | 三井金屬鑛業股份有限公司 | 印刷電路板之製造方法 |
WO2024043196A1 (ja) * | 2022-08-26 | 2024-02-29 | Mgcエレクトロテクノ株式会社 | 積層体、及び、コアレス基板の製造方法 |
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US9006103B2 (en) | 2015-04-14 |
US20140087556A1 (en) | 2014-03-27 |
JP6092555B2 (ja) | 2017-03-08 |
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