JP2014053369A5 - - Google Patents
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- Publication number
- JP2014053369A5 JP2014053369A5 JP2012195167A JP2012195167A JP2014053369A5 JP 2014053369 A5 JP2014053369 A5 JP 2014053369A5 JP 2012195167 A JP2012195167 A JP 2012195167A JP 2012195167 A JP2012195167 A JP 2012195167A JP 2014053369 A5 JP2014053369 A5 JP 2014053369A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- insulating film
- dielectric constants
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000010410 layer Substances 0.000 description 21
- 239000011229 interlayer Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 101100107923 Vitis labrusca AMAT gene Proteins 0.000 description 1
- CFOAUMXQOCBWNJ-UHFFFAOYSA-N [B].[Si] Chemical compound [B].[Si] CFOAUMXQOCBWNJ-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012195167A JP5835696B2 (ja) | 2012-09-05 | 2012-09-05 | 半導体装置およびその製造方法 |
| US13/836,215 US9024443B2 (en) | 2012-09-05 | 2013-03-15 | Semiconductor device and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012195167A JP5835696B2 (ja) | 2012-09-05 | 2012-09-05 | 半導体装置およびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014053369A JP2014053369A (ja) | 2014-03-20 |
| JP2014053369A5 true JP2014053369A5 (https=) | 2014-10-16 |
| JP5835696B2 JP5835696B2 (ja) | 2015-12-24 |
Family
ID=50186361
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012195167A Expired - Fee Related JP5835696B2 (ja) | 2012-09-05 | 2012-09-05 | 半導体装置およびその製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US9024443B2 (https=) |
| JP (1) | JP5835696B2 (https=) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9583429B2 (en) | 2013-11-14 | 2017-02-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Interconnect structure and method of forming same |
| US20150279793A1 (en) * | 2014-03-27 | 2015-10-01 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure and manufacturing method thereof |
| US9184060B1 (en) * | 2014-11-14 | 2015-11-10 | Lam Research Corporation | Plated metal hard mask for vertical NAND hole etch |
| CN110246827B (zh) * | 2014-12-16 | 2021-10-15 | 旺宏电子股份有限公司 | 半导体元件及其制造方法 |
| US9449915B2 (en) * | 2014-12-24 | 2016-09-20 | Macronix International Co., Ltd. | Semiconductor device and method of manufacturing the same |
| US9685555B2 (en) * | 2014-12-29 | 2017-06-20 | Stmicroelectronics, Inc. | High-reliability, low-resistance contacts for nanoscale transistors |
| US9443921B2 (en) * | 2015-02-10 | 2016-09-13 | Advanced Semiconductor Engineering, Inc. | Semiconductor package structure and semiconductor manufacturing process |
| CN104766869B (zh) * | 2015-04-07 | 2018-01-26 | 合肥鑫晟光电科技有限公司 | 阵列基板及其制备方法、显示装置 |
| US10410883B2 (en) | 2016-06-01 | 2019-09-10 | Corning Incorporated | Articles and methods of forming vias in substrates |
| US10794679B2 (en) | 2016-06-29 | 2020-10-06 | Corning Incorporated | Method and system for measuring geometric parameters of through holes |
| US10134657B2 (en) | 2016-06-29 | 2018-11-20 | Corning Incorporated | Inorganic wafer having through-holes attached to semiconductor wafer |
| CN106024636B (zh) * | 2016-07-12 | 2023-08-04 | 杭州士兰集成电路有限公司 | 槽栅功率器件及制作方法 |
| US11078112B2 (en) | 2017-05-25 | 2021-08-03 | Corning Incorporated | Silica-containing substrates with vias having an axially variable sidewall taper and methods for forming the same |
| US10580725B2 (en) | 2017-05-25 | 2020-03-03 | Corning Incorporated | Articles having vias with geometry attributes and methods for fabricating the same |
| US12180108B2 (en) | 2017-12-19 | 2024-12-31 | Corning Incorporated | Methods for etching vias in glass-based articles employing positive charge organic molecules |
| JP2019121685A (ja) * | 2018-01-05 | 2019-07-22 | 東京エレクトロン株式会社 | エッチング方法 |
| US11554984B2 (en) | 2018-02-22 | 2023-01-17 | Corning Incorporated | Alkali-free borosilicate glasses with low post-HF etch roughness |
| US11152294B2 (en) | 2018-04-09 | 2021-10-19 | Corning Incorporated | Hermetic metallized via with improved reliability |
| US10847482B2 (en) | 2018-05-16 | 2020-11-24 | Micron Technology, Inc. | Integrated circuit structures and methods of forming an opening in a material |
| US10651100B2 (en) | 2018-05-16 | 2020-05-12 | Micron Technology, Inc. | Substrates, structures within a scribe-line area of a substrate, and methods of forming a conductive line of a redistribution layer of a substrate and of forming a structure within a scribe-line area of the substrate |
| WO2020061437A1 (en) | 2018-09-20 | 2020-03-26 | Industrial Technology Research Institute | Copper metallization for through-glass vias on thin glass |
| JP6798730B2 (ja) * | 2018-12-13 | 2020-12-09 | ウルトラメモリ株式会社 | 半導体モジュール及びその製造方法 |
| WO2020171940A1 (en) | 2019-02-21 | 2020-08-27 | Corning Incorporated | Glass or glass ceramic articles with copper-metallized through holes and processes for making the same |
| JP7237672B2 (ja) | 2019-03-15 | 2023-03-13 | 株式会社東芝 | 半導体装置 |
| WO2020208698A1 (ja) * | 2019-04-09 | 2020-10-15 | 日本碍子株式会社 | 接合基板及び接合基板の製造方法 |
| KR102829971B1 (ko) * | 2020-07-02 | 2025-07-08 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
| KR102944499B1 (ko) | 2021-06-30 | 2026-03-25 | 삼성전자주식회사 | 집적회로 소자 및 이를 포함하는 전자 시스템 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2623812B2 (ja) * | 1989-01-25 | 1997-06-25 | 日本電気株式会社 | 半導体装置の製造方法 |
| US5746884A (en) * | 1996-08-13 | 1998-05-05 | Advanced Micro Devices, Inc. | Fluted via formation for superior metal step coverage |
| JP3445495B2 (ja) * | 1997-07-23 | 2003-09-08 | 株式会社東芝 | 半導体装置 |
| JP3036499B2 (ja) * | 1997-11-26 | 2000-04-24 | 日本電気株式会社 | 配線用アルミニウム膜の形成方法及びアルミニウム配線を有する半導体装置 |
| JP4260334B2 (ja) * | 1999-03-29 | 2009-04-30 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2000332008A (ja) * | 1999-05-20 | 2000-11-30 | Fujitsu Ltd | 半導体装置及びその製造方法 |
| JP2001244334A (ja) * | 2000-03-02 | 2001-09-07 | Toshiba Corp | 半導体装置及びその製造方法 |
| US6645853B1 (en) | 2001-12-05 | 2003-11-11 | Advanced Micro Devices, Inc. | Interconnects with improved barrier layer adhesion |
| DE102005042732A1 (de) * | 2004-10-14 | 2006-05-24 | Samsung Electronics Co., Ltd., Suwon | Verfahren zur Ätzstoppschichtbildung, Halbleiterbauelement und Herstellungsverfahren |
| JP2007027291A (ja) * | 2005-07-14 | 2007-02-01 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
| US7318422B2 (en) * | 2005-07-27 | 2008-01-15 | Walbro Engine Management, L.L.C. | Fluid pump assembly |
| JP4272191B2 (ja) | 2005-08-30 | 2009-06-03 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP4523535B2 (ja) | 2005-08-30 | 2010-08-11 | 富士通株式会社 | 半導体装置の製造方法 |
| JP5355892B2 (ja) | 2005-09-16 | 2013-11-27 | ルネサスエレクトロニクス株式会社 | 配線構造並びに半導体装置及びその製造方法 |
| JP2008091835A (ja) | 2006-10-05 | 2008-04-17 | Toshiba Corp | 半導体装置およびその製造方法 |
| JP5117421B2 (ja) * | 2009-02-12 | 2013-01-16 | 株式会社東芝 | 磁気抵抗効果素子及びその製造方法 |
| JP2012129465A (ja) * | 2010-12-17 | 2012-07-05 | Elpida Memory Inc | 半導体装置及びその製造方法 |
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2012
- 2012-09-05 JP JP2012195167A patent/JP5835696B2/ja not_active Expired - Fee Related
-
2013
- 2013-03-15 US US13/836,215 patent/US9024443B2/en not_active Expired - Fee Related