JP2014007020A - 発光パネルおよび発光パネル製造方法 - Google Patents
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Abstract
【解決手段】光を放出する光放出部10bと、し外部光L3・L4を透過させる光透過部10aを備えた発光パネルである。透過発光領域10は、光を放出する光放出部と、光を透過させる光透過部と、を有する。光放出部は、光を放出する発光部と、光を遮光するとともに反射する導電性の反射層13と、を有する。発光部は、反射層13の一面に電気的に接続される導電性で透光性の第1電極層12と、この第1電極層12と対向配置された導電性で透光性の第2電極層15と、この第2電極層15と前記第1電極層12との間に介在される有機EL層14と、を有する。光透過部は、反射層13の位置しない第1電極層12と、第2電極層15と、有機EL層14と、を有する。光透過部10aの第1電極層12と有機EL層14との空間には樹脂層(絶縁性光透過層)18を充填する。
【選択図】図7
Description
次に、図4〜図8を参照し、発光パネルの第1の実施形態について説明する。図4は、有機EL素子を光源としたトップエミッション型の発光パネルの平面構成を示す概念図である。図5は、図4のIIa−IIb線断面図である。図6は、図4のIIc−IId線断面図である。図7は、図4のIIe−IIf線断面図である。図8は、図7の一部を拡大して示す断面図である。
図9および図10を参照し、発光パネルに関する第2の実施形態について説明する。図9は、平面構成を示す概念図である。図10は、図9の一部を拡大して示す断面図である。
図11および図12を参照し、発光パネルに関する第3の実施形態について説明する。図11は、平面構成を示す概念図である。図12は、図11の一部を拡大して示す断面図である。この実施形態は、第2の実施形態と同じように、第2電極層15と反射層13のショートを防止するものである。
100A 第1主面
100B 第2主面
10 透過発光領域
20 周辺領域
10a 光透過部
10b 光放出部
11 透光性基板
12 第1電極層
13 反射層
14 有機EL層
15 第2電極層
16 保護キャップ
171 第1絶縁層
172 第2絶縁層
18 樹脂層
191 第1電極パッド
192 第2電極パッド
Claims (7)
- 光を放出し光を透過させる透過発光領域を備えた発光パネルであって、
前記透過発光領域は、光を放出する光放出部と、光を透過させる光透過部と、を有し、
前記光放出部は、光を放出する発光部と、光を遮光するとともに反射する導電性の反射層と、を有し、
前記発光部は、前記反射層の一面に電気的に接続される導電性で透光性の第1電極層と、該第1電極層と対向配置された導電性で透光性の第2電極層と、該第2電極層と前記第1電極層との間に介在される有機EL層と、を有し、
前記光透過部は、前記反射層の位置しない前記第1電極層と、前記第2電極層と、前記有機EL層と、を有し、
前記光透過部の前記第1電極層と前記有機EL層との空間に充填した樹脂層(絶縁性光透過層)と、からなる発光パネル。 - 前記発光部から前記発光パネルの第1主面の側に向かう光は、該第1主面から放出し、前記発光部から前記発光パネルの第2主面の側に向かう光は、前記反射層により遮蔽した、請求項1記載の発光パネル。
- 前記有機EL層は、トップエミッション型の発光構造を有している請求項1または2記載の発光パネル。
- 前記反射層の上面の高さは、前記樹脂層(絶縁性光透過層)の上面より低くした、請求項1〜3の何れか1項記載の発光パネル。
- 前記反射層の上面の高さは、前記樹脂層(絶縁性光透過層)の上面より高くした、請求項1〜3の何れか1項記載の発光パネル。
- 光を放出し光を透過させる透過発光領域を備えた発光パネルの製造方法であって、
非透湿の透光性基板の表面に、透光性で導電性の第1電極層を成膜し、
前記第1電極層上に導電性の反射層を成膜し、
前記反射層上に有機EL層を成膜し、
前記有機EL層上に透光性で導電性の第2電極層を成膜し、
前記反射層の位置する以外の前記第1電極層と前記有機EL層間に樹脂を充填して樹脂層(絶縁性光透過層)を形成し、
前記反射層以外は、スピンコートで成膜し、マスクを用いて必要部分をフォトリソグラフィ法で形成した、発光パネルの製造方法。 - 前記反射層は、スパッタリング法または熱転写法により形成した、請求6記載の発光パネル製造方法。
Priority Applications (6)
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JP2012140743A JP2014007020A (ja) | 2012-06-22 | 2012-06-22 | 発光パネルおよび発光パネル製造方法 |
KR20147027195A KR20140130734A (ko) | 2012-06-22 | 2013-05-30 | 발광패널 |
US14/398,606 US9231229B2 (en) | 2012-06-22 | 2013-05-30 | Light emitting panel and manufacturing method of light emitting panel |
EP13807760.7A EP2866527A1 (en) | 2012-06-22 | 2013-05-30 | Light emitting panel |
PCT/JP2013/003427 WO2013190781A1 (ja) | 2012-06-22 | 2013-05-30 | 発光パネル |
CN201380027727.2A CN104350811A (zh) | 2012-06-22 | 2013-05-30 | 发光面板 |
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JP2012140743A JP2014007020A (ja) | 2012-06-22 | 2012-06-22 | 発光パネルおよび発光パネル製造方法 |
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US (1) | US9231229B2 (ja) |
EP (1) | EP2866527A1 (ja) |
JP (1) | JP2014007020A (ja) |
KR (1) | KR20140130734A (ja) |
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JP2017069030A (ja) * | 2015-09-30 | 2017-04-06 | 住友化学株式会社 | 有機el素子の製造方法 |
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CN103715230B (zh) * | 2013-12-31 | 2018-12-07 | 北京维信诺科技有限公司 | 一种透明oled器件及其显示装置 |
USRE48695E1 (en) | 2013-12-31 | 2021-08-17 | Beijing Visionox Technology Co., Ltd. | Transparent OLED device and display device employing same |
WO2015125308A1 (ja) * | 2014-02-24 | 2015-08-27 | 株式会社 東芝 | 有機電界発光素子、照明装置、および照明システム |
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JP2001332393A (ja) * | 2000-05-23 | 2001-11-30 | Canon Inc | 電子機器 |
JP2002198168A (ja) | 2000-12-26 | 2002-07-12 | Nec Kansai Ltd | 電界発光灯及びその製造方法 |
JP4849779B2 (ja) | 2003-05-16 | 2012-01-11 | 株式会社半導体エネルギー研究所 | 発光装置および電子機器 |
US7566902B2 (en) * | 2003-05-16 | 2009-07-28 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and electronic device |
US20080137008A1 (en) | 2006-12-06 | 2008-06-12 | General Electric Company | Color tunable oled illumination display and method for controlled display illumination |
JP2011249541A (ja) * | 2010-05-26 | 2011-12-08 | Harison Toshiba Lighting Corp | 発光パネル |
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WO2013190781A1 (ja) | 2013-12-27 |
KR20140130734A (ko) | 2014-11-11 |
US20150102309A1 (en) | 2015-04-16 |
US9231229B2 (en) | 2016-01-05 |
EP2866527A1 (en) | 2015-04-29 |
CN104350811A (zh) | 2015-02-11 |
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