JP2014006469A5 - - Google Patents
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- JP2014006469A5 JP2014006469A5 JP2012143760A JP2012143760A JP2014006469A5 JP 2014006469 A5 JP2014006469 A5 JP 2014006469A5 JP 2012143760 A JP2012143760 A JP 2012143760A JP 2012143760 A JP2012143760 A JP 2012143760A JP 2014006469 A5 JP2014006469 A5 JP 2014006469A5
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- 239000000463 material Substances 0.000 claims 18
- 239000010410 layer Substances 0.000 claims 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 10
- 229910052710 silicon Inorganic materials 0.000 claims 10
- 239000010703 silicon Substances 0.000 claims 10
- 239000007789 gas Substances 0.000 claims 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 6
- 239000001301 oxygen Substances 0.000 claims 6
- 229910052760 oxygen Inorganic materials 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 6
- 238000001312 dry etching Methods 0.000 claims 5
- 238000004519 manufacturing process Methods 0.000 claims 5
- 238000000034 method Methods 0.000 claims 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 4
- 229910052804 chromium Inorganic materials 0.000 claims 4
- 239000011651 chromium Substances 0.000 claims 4
- 229910001882 dioxygen Inorganic materials 0.000 claims 4
- 229910052750 molybdenum Inorganic materials 0.000 claims 4
- 239000011733 molybdenum Substances 0.000 claims 4
- 229910052723 transition metal Inorganic materials 0.000 claims 4
- 150000003624 transition metals Chemical class 0.000 claims 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 4
- 229910052721 tungsten Inorganic materials 0.000 claims 4
- 239000010937 tungsten Substances 0.000 claims 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 3
- 229910052731 fluorine Inorganic materials 0.000 claims 3
- 239000011737 fluorine Substances 0.000 claims 3
- 239000004065 semiconductor Substances 0.000 claims 3
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 2
- 239000000460 chlorine Substances 0.000 claims 2
- 229910052801 chlorine Inorganic materials 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 230000003287 optical effect Effects 0.000 claims 2
- 239000002344 surface layer Substances 0.000 claims 2
- 238000002834 transmittance Methods 0.000 claims 2
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012143760A JP5906143B2 (ja) | 2012-06-27 | 2012-06-27 | マスクブランク、転写用マスク、転写用マスクの製造方法および半導体デバイスの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012143760A JP5906143B2 (ja) | 2012-06-27 | 2012-06-27 | マスクブランク、転写用マスク、転写用マスクの製造方法および半導体デバイスの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014006469A JP2014006469A (ja) | 2014-01-16 |
| JP2014006469A5 true JP2014006469A5 (enrdf_load_stackoverflow) | 2015-06-25 |
| JP5906143B2 JP5906143B2 (ja) | 2016-04-20 |
Family
ID=50104214
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012143760A Active JP5906143B2 (ja) | 2012-06-27 | 2012-06-27 | マスクブランク、転写用マスク、転写用マスクの製造方法および半導体デバイスの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5906143B2 (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI720752B (zh) * | 2015-09-30 | 2021-03-01 | 日商Ｈｏｙａ股份有限公司 | 空白遮罩、相位移轉遮罩及半導體元件之製造方法 |
| KR102398583B1 (ko) * | 2015-11-06 | 2022-05-17 | 호야 가부시키가이샤 | 마스크 블랭크, 위상 시프트 마스크의 제조 방법 및 반도체 디바이스의 제조 방법 |
| JP7545791B1 (ja) | 2023-08-04 | 2024-09-05 | 株式会社エスケーエレクトロニクス | フォトマスクの製造方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1124231A (ja) * | 1997-07-01 | 1999-01-29 | Sony Corp | ハーフトーン位相シフトマスク、及びその製造方法 |
| JP5165833B2 (ja) * | 2005-02-04 | 2013-03-21 | 信越化学工業株式会社 | フォトマスクブランク、フォトマスク、およびフォトマスクブランクの製造方法 |
| JP4933753B2 (ja) * | 2005-07-21 | 2012-05-16 | 信越化学工業株式会社 | 位相シフトマスクブランクおよび位相シフトマスクならびにこれらの製造方法 |
| KR101426190B1 (ko) * | 2005-09-09 | 2014-07-31 | 호야 가부시키가이샤 | 포토마스크 블랭크, 포토마스크와 그 제조 방법, 및 반도체 장치의 제조 방법 |
| TWI457696B (zh) * | 2008-03-31 | 2014-10-21 | Hoya Corp | 空白光罩、光罩及空白光罩之製造方法 |
| JP5554239B2 (ja) * | 2008-09-30 | 2014-07-23 | Ｈｏｙａ株式会社 | フォトマスクブランク、フォトマスク及びその製造方法 |
| JP5704754B2 (ja) * | 2010-01-16 | 2015-04-22 | Hoya株式会社 | マスクブランク及び転写用マスクの製造方法 |
| JP5662032B2 (ja) * | 2010-02-05 | 2015-01-28 | アルバック成膜株式会社 | マスクブランクス及びハーフトーンマスク |
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2012
- 2012-06-27 JP JP2012143760A patent/JP5906143B2/ja active Active