JP2014006469A5 - - Google Patents

Claims (23)

A mask blank having a structure in which a first film and a second film are sequentially laminated on a substrate from the substrate side, which is used for producing a transfer mask;
The first film is made of a material that can be dry-etched with a fluorine-based gas,
The second film has a laminated structure of a lower layer and an upper layer,
The lower layer is made of a material containing at least one of molybdenum and tungsten and having a silicon content of 0 at% or more and less than 10 at%,
The upper layer is made of a material containing chromium and oxygen, a chromium content of less than 50 at%, and an oxygen content of 25 at% or more. The mask blank according to claim 1, wherein the lower layer is made of a material containing at least one of molybdenum and tungsten and not containing silicon.   The mask blank according to claim 1, wherein the lower layer is made of a material further containing nitrogen. The mask blank according to any one of claims 1 to 3, wherein the lower layer is made of a material having an oxygen content of 30 at% or less. The second film, the mask blank according to any one of claims 1 to 4, characterized in that dry etching using a mixed gas of chlorine gas and oxygen gas formed of a material as possible. The first film is made of a material containing silicon, or a material containing silicon and a transition metal, wherein the silicon content is higher than the transition metal content. Item 6. A mask blank according to any one of Items 1 to 5 . The first film is a mask blank according to any one of claims 1 to 6, characterized in that the oxide layer in the surface layer of the second film side. The mask blank according to any one of claims 1 to 7 , wherein a resist film is formed with a thickness of 100 nm or less in contact with the surface of the upper layer. The laminated structure of the first film and the second film, the mask blank according to any one of claims 1 to 8, the optical density with respect to the ArF exposure light, characterized in that 2.8 or more. The first film is a mask blank according to any one of claims 1-9, wherein the transmittance to ArF exposure light is a light semi-transmitting film of 1% or more. A transfer mask in which a first film having a first pattern and a second film having a second pattern are sequentially stacked on a substrate from the substrate side,
The first film is made of a material that can be dry-etched with a fluorine-based gas,
The second film has a laminated structure of a lower layer and an upper layer,
The lower layer is made of a material containing at least one of molybdenum and tungsten and having a silicon content of 0 at% or more and less than 10 at%,
The transfer mask according to claim 1, wherein the upper layer is made of a material containing chromium and oxygen, a chromium content of less than 50 at%, and an oxygen content of 25 at% or more. 12. The transfer mask according to claim 11 , wherein the lower layer is made of a material containing at least one of molybdenum and tungsten and not containing silicon. The lower layer, transfer mask according to claim 11 or 12, characterized in that it consists of a material further containing nitrogen. The transfer mask according to claim 11, wherein the lower layer is made of a material having an oxygen content of 30 at% or less. The second film, transfer mask according to any of claims 11 to 14, characterized in that dry etching using a mixed gas of chlorine gas and oxygen gas formed of a material as possible. The first film is made of a material containing silicon, or a material containing silicon and a transition metal, wherein the silicon content is higher than the transition metal content. Item 16. A transfer mask according to any one of Items 11 to 15 . The first film is transfer mask according to any one of claims 11 16, characterized in that the oxide layer in the surface layer of the second film side. The laminated structure of the first film and the second film, transfer mask according to any one of claims 11 to 17, the optical density with respect to the ArF exposure light, characterized in that 2.8 or more. The first film is transfer mask according to any one of claims 11 18, wherein the transmittance to ArF exposure light is a light semi-transmitting film of 1% or more. A method for manufacturing a transfer mask using the mask blank according to any one of claims 1 to 10 ,
A resist film having a first pattern is formed in contact with the surface of the second film, and the first pattern is formed on the second film by dry etching using a mixed gas of chlorine-based gas and oxygen gas. And a process of
Step of forming the first pattern on the first film by removing the resist film having the first pattern and then using the second film having the first pattern as a mask by dry etching using a fluorine-based gas When,
A resist film having a second pattern is formed in contact with the surface of the second film, and a second pattern is formed on the second film by dry etching using a mixed gas of chlorine-based gas and oxygen gas. And a process for producing a transfer mask. 21. The method of manufacturing a transfer mask according to claim 20 , wherein the resist film having the first pattern has a thickness of 100 nm or less. Using the transfer mask according to any of claims 11 19, a method of manufacturing a semiconductor device characterized by comprising the step of exposing and transferring a first pattern to the resist film on a semiconductor substrate. A process for exposing and transferring a first pattern onto a resist film on a semiconductor substrate using the transfer mask manufactured by the method for manufacturing a transfer mask according to claim 20 or 21 . Production method.