JP5906143B2 - マスクブランク、転写用マスク、転写用マスクの製造方法および半導体デバイスの製造方法 - Google Patents
マスクブランク、転写用マスク、転写用マスクの製造方法および半導体デバイスの製造方法 Download PDFInfo
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- JP5906143B2 JP5906143B2 JP2012143760A JP2012143760A JP5906143B2 JP 5906143 B2 JP5906143 B2 JP 5906143B2 JP 2012143760 A JP2012143760 A JP 2012143760A JP 2012143760 A JP2012143760 A JP 2012143760A JP 5906143 B2 JP5906143 B2 JP 5906143B2
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- 238000012546 transfer Methods 0.000 title claims description 105
- 238000004519 manufacturing process Methods 0.000 title claims description 34
- 239000004065 semiconductor Substances 0.000 title claims description 29
- 239000007789 gas Substances 0.000 claims description 141
- 239000010410 layer Substances 0.000 claims description 135
- 239000000463 material Substances 0.000 claims description 133
- 239000000460 chlorine Substances 0.000 claims description 54
- 239000011651 chromium Substances 0.000 claims description 54
- 238000001312 dry etching Methods 0.000 claims description 50
- 229910052760 oxygen Inorganic materials 0.000 claims description 49
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 47
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 47
- 229910052801 chlorine Inorganic materials 0.000 claims description 47
- 239000001301 oxygen Substances 0.000 claims description 47
- 239000000758 substrate Substances 0.000 claims description 46
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 45
- 229910001882 dioxygen Inorganic materials 0.000 claims description 45
- 238000000034 method Methods 0.000 claims description 44
- 229910052710 silicon Inorganic materials 0.000 claims description 44
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 43
- 230000003287 optical effect Effects 0.000 claims description 43
- 239000010703 silicon Substances 0.000 claims description 43
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 41
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 40
- 229910052804 chromium Inorganic materials 0.000 claims description 40
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 31
- 229910052731 fluorine Inorganic materials 0.000 claims description 31
- 239000011737 fluorine Substances 0.000 claims description 31
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 27
- 229910052750 molybdenum Inorganic materials 0.000 claims description 27
- 239000011733 molybdenum Substances 0.000 claims description 27
- 229910052757 nitrogen Inorganic materials 0.000 claims description 24
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 21
- 229910052721 tungsten Inorganic materials 0.000 claims description 21
- 239000010937 tungsten Substances 0.000 claims description 21
- 230000008569 process Effects 0.000 claims description 18
- 229910052723 transition metal Inorganic materials 0.000 claims description 18
- 150000003624 transition metals Chemical class 0.000 claims description 18
- 238000002834 transmittance Methods 0.000 claims description 16
- 239000002344 surface layer Substances 0.000 claims description 10
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims description 6
- 239000010408 film Substances 0.000 description 416
- 238000005530 etching Methods 0.000 description 72
- 239000010409 thin film Substances 0.000 description 27
- 230000010363 phase shift Effects 0.000 description 18
- 230000002093 peripheral effect Effects 0.000 description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- 238000004544 sputter deposition Methods 0.000 description 10
- 229910052799 carbon Inorganic materials 0.000 description 9
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910052715 tantalum Inorganic materials 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 7
- 238000011161 development Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 6
- 238000010894 electron beam technology Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 238000005546 reactive sputtering Methods 0.000 description 6
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000007687 exposure technique Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- 238000012795 verification Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 229910002092 carbon dioxide Inorganic materials 0.000 description 3
- 239000001569 carbon dioxide Substances 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000010955 niobium Substances 0.000 description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 2
- ITWBWJFEJCHKSN-UHFFFAOYSA-N 1,4,7-triazonane Chemical compound C1CNCCNCCN1 ITWBWJFEJCHKSN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910004535 TaBN Inorganic materials 0.000 description 1
- 229910004166 TaN Inorganic materials 0.000 description 1
- 229910003071 TaON Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012143760A JP5906143B2 (ja) | 2012-06-27 | 2012-06-27 | マスクブランク、転写用マスク、転写用マスクの製造方法および半導体デバイスの製造方法 |
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| JP2012143760A JP5906143B2 (ja) | 2012-06-27 | 2012-06-27 | マスクブランク、転写用マスク、転写用マスクの製造方法および半導体デバイスの製造方法 |
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| Publication Number | Publication Date |
|---|---|
| JP2014006469A JP2014006469A (ja) | 2014-01-16 |
| JP2014006469A5 JP2014006469A5 (enrdf_load_stackoverflow) | 2015-06-25 |
| JP5906143B2 true JP5906143B2 (ja) | 2016-04-20 |
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| JP2012143760A Active JP5906143B2 (ja) | 2012-06-27 | 2012-06-27 | マスクブランク、転写用マスク、転写用マスクの製造方法および半導体デバイスの製造方法 |
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| JP (1) | JP5906143B2 (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7545791B1 (ja) | 2023-08-04 | 2024-09-05 | 株式会社エスケーエレクトロニクス | フォトマスクの製造方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI720752B (zh) * | 2015-09-30 | 2021-03-01 | 日商Ｈｏｙａ股份有限公司 | 空白遮罩、相位移轉遮罩及半導體元件之製造方法 |
| KR102398583B1 (ko) * | 2015-11-06 | 2022-05-17 | 호야 가부시키가이샤 | 마스크 블랭크, 위상 시프트 마스크의 제조 방법 및 반도체 디바이스의 제조 방법 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1124231A (ja) * | 1997-07-01 | 1999-01-29 | Sony Corp | ハーフトーン位相シフトマスク、及びその製造方法 |
| JP5165833B2 (ja) * | 2005-02-04 | 2013-03-21 | 信越化学工業株式会社 | フォトマスクブランク、フォトマスク、およびフォトマスクブランクの製造方法 |
| JP4933753B2 (ja) * | 2005-07-21 | 2012-05-16 | 信越化学工業株式会社 | 位相シフトマスクブランクおよび位相シフトマスクならびにこれらの製造方法 |
| KR101426190B1 (ko) * | 2005-09-09 | 2014-07-31 | 호야 가부시키가이샤 | 포토마스크 블랭크, 포토마스크와 그 제조 방법, 및 반도체 장치의 제조 방법 |
| TWI457696B (zh) * | 2008-03-31 | 2014-10-21 | Hoya Corp | 空白光罩、光罩及空白光罩之製造方法 |
| JP5554239B2 (ja) * | 2008-09-30 | 2014-07-23 | Ｈｏｙａ株式会社 | フォトマスクブランク、フォトマスク及びその製造方法 |
| JP5704754B2 (ja) * | 2010-01-16 | 2015-04-22 | Hoya株式会社 | マスクブランク及び転写用マスクの製造方法 |
| JP5662032B2 (ja) * | 2010-02-05 | 2015-01-28 | アルバック成膜株式会社 | マスクブランクス及びハーフトーンマスク |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7545791B1 (ja) | 2023-08-04 | 2024-09-05 | 株式会社エスケーエレクトロニクス | フォトマスクの製造方法 |
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| JP2014006469A (ja) | 2014-01-16 |
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