JP2013541150A5 - - Google Patents

Download PDF

Info

Publication number
JP2013541150A5
JP2013541150A5 JP2013528751A JP2013528751A JP2013541150A5 JP 2013541150 A5 JP2013541150 A5 JP 2013541150A5 JP 2013528751 A JP2013528751 A JP 2013528751A JP 2013528751 A JP2013528751 A JP 2013528751A JP 2013541150 A5 JP2013541150 A5 JP 2013541150A5
Authority
JP
Japan
Prior art keywords
electron gun
tip
end cone
chip
electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2013528751A
Other languages
English (en)
Japanese (ja)
Other versions
JP6038794B2 (ja
JP2013541150A (ja
Filing date
Publication date
Priority claimed from FR1003696A external-priority patent/FR2965102B1/fr
Application filed filed Critical
Publication of JP2013541150A publication Critical patent/JP2013541150A/ja
Publication of JP2013541150A5 publication Critical patent/JP2013541150A5/ja
Application granted granted Critical
Publication of JP6038794B2 publication Critical patent/JP6038794B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2013528751A 2010-09-17 2011-09-16 電子顕微鏡法用に構成された、高電圧下で放射する電子銃 Active JP6038794B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1003696A FR2965102B1 (fr) 2010-09-17 2010-09-17 Canon a electrons emettant sous haute tension, destine notamment a la microscopie electronique
FR1003696 2010-09-17
PCT/FR2011/052135 WO2012035277A1 (fr) 2010-09-17 2011-09-16 Canon à électrons émettant sous haute tension, destiné notamment à la microscopie électronique

Publications (3)

Publication Number Publication Date
JP2013541150A JP2013541150A (ja) 2013-11-07
JP2013541150A5 true JP2013541150A5 (https=) 2014-11-06
JP6038794B2 JP6038794B2 (ja) 2016-12-07

Family

ID=43799504

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013528751A Active JP6038794B2 (ja) 2010-09-17 2011-09-16 電子顕微鏡法用に構成された、高電圧下で放射する電子銃

Country Status (5)

Country Link
US (1) US9048057B2 (https=)
EP (1) EP2617049B1 (https=)
JP (1) JP6038794B2 (https=)
FR (1) FR2965102B1 (https=)
WO (1) WO2012035277A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10692692B2 (en) * 2015-05-27 2020-06-23 Kla-Tencor Corporation System and method for providing a clean environment in an electron-optical system
US10832885B2 (en) * 2015-12-23 2020-11-10 Massachusetts Institute Of Technology Electron transparent membrane for cold cathode devices
CN119985408B (zh) * 2025-01-21 2025-12-26 国家纳米科学中心 一种基于碳纳米管电子源的超高时空分辨成像方法及成像系统

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3353768B2 (ja) * 1999-12-17 2002-12-03 日本電気株式会社 ナノチューブの加工方法
US7879308B1 (en) * 2000-03-17 2011-02-01 University Of Central Florida Research Foundation, Inc. Multiwall carbon nanotube field emitter fabricated by focused ion beam technique
JP3453378B2 (ja) * 2002-01-08 2003-10-06 科学技術振興事業団 鋭端多層カーボンナノチューブ放射状集合体とその製造方法
JP3832402B2 (ja) * 2002-08-12 2006-10-11 株式会社日立製作所 カーボンナノチューブを有する電子源とそれを用いた電子顕微鏡および電子線描画装置
DE10362116B4 (de) * 2003-09-17 2008-08-28 Carl Zeiss Nts Gmbh Verfahren zur Präparation einer Probe für elektronenmikroskopische Untersuchungen, sowie dabei verwendeter Greifer
US7465210B2 (en) * 2004-02-25 2008-12-16 The Regents Of The University Of California Method of fabricating carbide and nitride nano electron emitters
JP4751635B2 (ja) * 2005-04-13 2011-08-17 株式会社日立ハイテクノロジーズ 磁界重畳型電子銃
JP2007055856A (ja) * 2005-08-25 2007-03-08 Dialight Japan Co Ltd 炭素膜、電子放出源および電界放射型照明ランプ
US20080242401A1 (en) * 2005-09-09 2008-10-02 Wms Gaming Inc. Wagering Game System with Bistable Lcd Display
JP4977399B2 (ja) * 2005-11-10 2012-07-18 株式会社日立ハイテクノロジーズ 荷電粒子線装置
JP2007242253A (ja) * 2006-03-06 2007-09-20 Hitachi High-Technologies Corp 先鋭化カーボンナノチューブ及びそれを用いた電子源
CN100573783C (zh) * 2006-04-05 2009-12-23 清华大学 碳纳米管场发射电子源的制造方法
CN101051595B (zh) * 2006-04-05 2010-11-10 清华大学 碳纳米管场发射电子源
JP5102968B2 (ja) * 2006-04-14 2012-12-19 株式会社日立ハイテクノロジーズ 導電性針およびその製造方法
JP2008041289A (ja) * 2006-08-02 2008-02-21 Hitachi High-Technologies Corp 電界放出型電子銃およびそれを用いた電子線応用装置
JP2008047309A (ja) * 2006-08-11 2008-02-28 Hitachi High-Technologies Corp 電界放出型電子銃、およびその運転方法
US7847273B2 (en) * 2007-03-30 2010-12-07 Eloret Corporation Carbon nanotube electron gun
JP5016988B2 (ja) * 2007-06-19 2012-09-05 株式会社日立ハイテクノロジーズ 荷電粒子線装置およびその真空立上げ方法
US7828622B1 (en) * 2007-10-25 2010-11-09 Kla-Tencor Technologies Corporation Sharpening metal carbide emitters
JP2009146705A (ja) * 2007-12-13 2009-07-02 Sumitomo Electric Ind Ltd 電子放出素子、電子源、電子線装置、及び電子放出素子の製造方法
US8252115B2 (en) * 2008-04-02 2012-08-28 Raytheon Company System and method for growing nanotubes with a specified isotope composition via ion implantation using a catalytic transmembrane
CN101559939B (zh) * 2008-04-18 2011-05-04 清华大学 碳纳米管制备方法
KR100943971B1 (ko) * 2008-06-30 2010-02-26 한국과학기술원 탄소 미세 구조물을 갖는 전계방출 어레이 및 그 제조방법
DE102008049654B4 (de) * 2008-09-30 2024-08-01 Carl Zeiss Microscopy Gmbh Elektronenstrahlquelle, Elektronenstrahlsystem mit derselben, Verfahren zur Herstellung der Elektronenstrahlquelle sowie deren Verwendung
US20110180385A1 (en) * 2010-01-28 2011-07-28 Raytheon Company Control of Catalytic Chemical Processes

Similar Documents

Publication Publication Date Title
Dong et al. Electron-beam-induced deposition with carbon nanotube emitters
JP4644679B2 (ja) カーボンナノチューブ電子イオン化装置
Bonard et al. Carbon nanotube films as electron field emitters
KR101040536B1 (ko) 나노구조 물질 기반 ｘ-선관을 위한 게이트-집속전극 일체형 전극 구조
US7732764B2 (en) Field emission electron gun and electron beam applied device using the same
JP2013541150A5 (https=)
Choi et al. Acquisition of X-ray images by using a CNT cold emitter
Sun et al. Fabrication of carbon nanotube emitters on the graphite rod and their high field emission performance
JP6594983B2 (ja) イオンビーム装置、及び試料元素分析方法
CN108428610A (zh) 一种小型离子源及其制备方法
KR101245524B1 (ko) 멀티―빔 ｘ―선관
CN102947479B (zh) 涂覆表面的方法和设备
JP6038794B2 (ja) 電子顕微鏡法用に構成された、高電圧下で放射する電子銃
CN108428609A (zh) 会聚离子束装置
CN111161988A (zh) 一种基于碳纳米管阴极的低能电子束枪
CN101681751B (zh) 使用cnt针尖的电子柱及用于对准cnt针尖的方法
US7442941B2 (en) Ion generator
CN102592914B (zh) 利用纳米碳管控制场发射电子发散角的方法
Chen et al. Fabrication and characterization of carbon nanotube arrays using sandwich catalyst stacks
JP6377920B2 (ja) 高輝度電子銃、高輝度電子銃を用いるシステム及び高輝度電子銃の動作方法
JP5406748B2 (ja) 電界放出型電子源及びその製造方法
Kato et al. Electron gun using coniferous carbon nano-structure
KR20130082364A (ko) 탄소나노튜브를 이용한 엑스선 발생장치의 음극부 모듈 제조방법
Filippov et al. Outgassing during large area field emitter operation in the diode system
Saito et al. Development of small sized FE-SEM equipped with a carbon nanotube field emitter