JP6038794B2 - 電子顕微鏡法用に構成された、高電圧下で放射する電子銃 - Google Patents
電子顕微鏡法用に構成された、高電圧下で放射する電子銃 Download PDFInfo
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- 238000001493 electron microscopy Methods 0.000 title description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 37
- 229910052721 tungsten Inorganic materials 0.000 claims description 36
- 239000010937 tungsten Substances 0.000 claims description 36
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 35
- 229910052799 carbon Inorganic materials 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 24
- 239000002121 nanofiber Substances 0.000 claims description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- 238000000605 extraction Methods 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 10
- 230000005855 radiation Effects 0.000 claims description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 8
- 229910052796 boron Inorganic materials 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 7
- 238000010884 ion-beam technique Methods 0.000 claims description 6
- 239000002041 carbon nanotube Substances 0.000 claims description 5
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 5
- 238000010168 coupling process Methods 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 229910000986 non-evaporable getter Inorganic materials 0.000 claims description 5
- 230000008878 coupling Effects 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 4
- 238000005329 nanolithography Methods 0.000 claims description 4
- 239000002296 pyrolytic carbon Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 229910020781 SixOy Inorganic materials 0.000 claims 1
- 229910021645 metal ion Inorganic materials 0.000 claims 1
- -1 tungsten ions Chemical class 0.000 claims 1
- 238000010894 electron beam technology Methods 0.000 description 15
- 230000000694 effects Effects 0.000 description 8
- 230000005684 electric field Effects 0.000 description 7
- 238000001093 holography Methods 0.000 description 7
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000002071 nanotube Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000002123 temporal effect Effects 0.000 description 4
- 238000004627 transmission electron microscopy Methods 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 3
- 229910052746 lanthanum Inorganic materials 0.000 description 3
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical class C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000000399 optical microscopy Methods 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 238000004611 spectroscopical analysis Methods 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 240000008042 Zea mays Species 0.000 description 1
- 235000005824 Zea mays ssp. parviglumis Nutrition 0.000 description 1
- 235000002017 Zea mays subsp mays Nutrition 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000002134 carbon nanofiber Substances 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 235000005822 corn Nutrition 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002048 multi walled nanotube Substances 0.000 description 1
- 230000000191 radiation effect Effects 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/46—Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
- H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
- H01J1/3044—Point emitters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
- H01J3/02—Electron guns
- H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
- H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/06—Electron sources; Electron guns
- H01J37/073—Electron guns using field emission, photo emission, or secondary emission electron sources
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30403—Field emission cathodes characterised by the emitter shape
- H01J2201/30407—Microengineered point emitters
- H01J2201/30411—Microengineered point emitters conical shaped, e.g. Spindt type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30403—Field emission cathodes characterised by the emitter shape
- H01J2201/30407—Microengineered point emitters
- H01J2201/30415—Microengineered point emitters needle shaped
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30403—Field emission cathodes characterised by the emitter shape
- H01J2201/30426—Coatings on the emitter surface, e.g. with low work function materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30403—Field emission cathodes characterised by the emitter shape
- H01J2201/30434—Nanotubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30446—Field emission cathodes characterised by the emitter material
- H01J2201/30453—Carbon types
- H01J2201/30469—Carbon nanotubes (CNTs)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/063—Electron sources
- H01J2237/06308—Thermionic sources
- H01J2237/06316—Schottky emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/063—Electron sources
- H01J2237/06325—Cold-cathode sources
- H01J2237/06341—Field emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
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- Cold Cathode And The Manufacture (AREA)
Description
Claims (14)
- 支持された電子放射チップと、
取り出しアノード(2)と、
前記放射チップと前記取り出しアノード(2)との間に電位差を生成可能な手段と、を備える、電界放射型電子銃(4)であって、
前記放射チップ(4)は、ナノファイバ上の熱分解カーボンの化学蒸着層からなる1つの端部コーン、および1つの導電チップ支持部を有し、
前記端部コーンは、直径が20nmよりも小さいナノメートルの先端、およびベースを有し、前記導電チップ支持部と整列して、該導電チップ支持部に結合され、
前記端部コーンは、その材料が、カーボンと、化学式CxByNzによって記載され、または表される材料と、を含む材料グループから選択されるコーンであり、Cはカーボンに相当し、Bはボロンに相当し、且つNは窒素に相当する、ことを特徴とする、電子銃。 - 前記ナノファイバは、その材料が、カーボンと、化学式CxByNzによって記載され、または表される材料と、化学式SixOyによって記載され、または表される材料と、を含む材料グループから選択されるナノファイバであり、Cはカーボンに相当し、Bはボロンに相当し、Nは窒素に相当し、Siはシリコンに相当し、且つ、Oは酸素に相当することを特徴とする、請求項1に記載の電子銃。
- 前記ナノファイバは、カーボンナノチューブであり、該カーボンナノチューブの直径は、10nm(10 -8 m)よりも小さいことを特徴とする、請求項1又は2に記載の電子銃。
- 前記導電チップ支持部は、金属チップ、特にタングステンからなる金属チップであることを特徴とする、請求項1〜3のいずれか1項に記載の電子銃。
- 前記チップ(4)は、タングステンからなる金属フィラメント(6)によって支持されることを特徴とする、請求項1〜4のいずれか1項に記載の電子銃。
- 前記端部コーンは、0.5〜10μmの範囲の長さを有することを特徴とする、請求項1〜5のいずれか1項に記載の電子銃。
- 前記放射チップおよび前記取り出しアノードは、チャンバ内に配置され、
前記チャンバにおいて、特に非蒸発性のゲッターを用いたポンプを使用して、高真空が形成されることを特徴とする、請求項1〜6のいずれか1項に記載の電子銃。 - 前記1つの端部コーンは、前記ナノファイバー上に直接的に堆積させられた前記カーボン系の材料の化学蒸着層からなることを特徴とする、請求項1〜7のいずれか1項に記載の電子銃。
- 電子銃および柱を備え、
前記柱は、電子光学コンポーネントのような種々の部材と、前記電子銃によって放射された電子を加速させる手段とを有する、電子顕微鏡であって、
前記電子銃は、請求項1〜8のいずれか1項に記載の電子銃であることを特徴とする、電子顕微鏡。 - 前記加速手段は、200kV以下の電位差を生成可能な手段を有することを特徴とする、請求項9に記載の電子顕微鏡。
- 局部的に電子を照射する装置、特に、ナノエッチング装置またはナノリソグラフィー装置であって、
1以上の、請求項1〜8のいずれか1項に記載の電子銃を備えることを特徴とする、装置。 - 支持された電子放射チップ(4)と、
取り出しアノード(2)と、
前記放射チップと前記取り出しアノード(2)との間に電位差を生成可能な手段と、を備えた、電界放射型電子銃を製造する方法であって、
ナノファイバ上に化学蒸着することによって、直径が20nmよりも小さいナノメートルの先端、およびベースを有する端部コーンを製造し、前記端部コーンは、その材料が、熱分解カーボンと、化学式CxByNzによって記載され、または表される材料と、を含む材料グループから選択されるコーンであり、Cはカーボンに相当し、Bはボロンに相当し、且つNは窒素に相当し、
次いで、前記端部コーンを導電チップ支持部に整列させ、前記端部コーンの前記ベースを導電チップ支持部に結合することによって、1つの前記導電チップ支持部、および1つの前記端部コーンを用いて、前記放射チップ(4)を形成することを特徴とする、方法。 - ナノマニピュレータと、GISとして知られるガス導入システムとを備えた、FIB装置として知られる集束イオンビーム装置によって生成された金属イオンのビームを用いて、前記端部コーンを前記チップ支持部に結合することを特徴とする、請求項12に記載の方法。
- タングステンからなる導電チップ支持部と、
タングステンイオンを生成するように構成されたFIB装置と、
気体タングステンを導入するように構成されたGISと、を用いることを特徴とする、請求項13に記載の方法。
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FR1003696 | 2010-09-17 | ||
FR1003696A FR2965102B1 (fr) | 2010-09-17 | 2010-09-17 | Canon a electrons emettant sous haute tension, destine notamment a la microscopie electronique |
PCT/FR2011/052135 WO2012035277A1 (fr) | 2010-09-17 | 2011-09-16 | Canon à électrons émettant sous haute tension, destiné notamment à la microscopie électronique |
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JP2013541150A JP2013541150A (ja) | 2013-11-07 |
JP2013541150A5 JP2013541150A5 (ja) | 2014-11-06 |
JP6038794B2 true JP6038794B2 (ja) | 2016-12-07 |
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EP (1) | EP2617049B1 (ja) |
JP (1) | JP6038794B2 (ja) |
FR (1) | FR2965102B1 (ja) |
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WO2012035277A1 (fr) | 2012-03-22 |
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