JP2013537511A - 半導体材料にドープするための方法 - Google Patents
半導体材料にドープするための方法 Download PDFInfo
- Publication number
- JP2013537511A JP2013537511A JP2013519122A JP2013519122A JP2013537511A JP 2013537511 A JP2013537511 A JP 2013537511A JP 2013519122 A JP2013519122 A JP 2013519122A JP 2013519122 A JP2013519122 A JP 2013519122A JP 2013537511 A JP2013537511 A JP 2013537511A
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- JP
- Japan
- Prior art keywords
- dopant
- sacrificial
- receptor
- crucible
- semiconductor material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000000463 material Substances 0.000 title claims abstract description 60
- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 title claims description 18
- 239000002019 doping agent Substances 0.000 claims abstract description 54
- 239000002994 raw material Substances 0.000 claims abstract description 17
- 238000002844 melting Methods 0.000 claims description 22
- 230000008018 melting Effects 0.000 claims description 22
- 239000012768 molten material Substances 0.000 abstract description 3
- 239000012535 impurity Substances 0.000 description 21
- 239000000370 acceptor Substances 0.000 description 6
- 238000009826 distribution Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000002178 crystalline material Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000011343 solid material Substances 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- -1 GaAs or CdTe Chemical class 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000010079 rubber tapping Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
前記半導体材料から成る原料を収容するるつぼを用意するステップと、
閉じられた犠牲受容体内にドーパント材料を配置するステップであって、犠牲受容体が前記半導体材料により形成されるステップと、
るつぼの内容物を溶融するステップと、
を備えるという事実によって特徴付けられる。
Claims (6)
- 半導体材料にドープするための方法であって、
前記半導体材料から成る原料(4)を収容するるつぼ(1)を用意するステップと、
前記半導体材料により形成される閉じられた犠牲受容体(5)内に、ドーパント材料(6)を配置するステップと、
前記るつぼ(1)内に前記受容体(5)を挿入するステップと、
前記るつぼ(1)の内容物を溶融するステップと、
を備えることを特徴とする方法。 - 閉じられた前記犠牲受容体(5)が密閉されることを特徴とする請求項1に記載の方法。
- 前記るつぼ(1)が減圧で動作する筐体(7)内に配置されることを特徴とする請求項1および請求項2のいずれか一項に記載の方法。
- 閉じられた前記犠牲受容体(5)が半導体材料から成る前記原料(4)の底部から1/3に配置されることを特徴とする請求項1から請求項3のいずれか一項に記載の方法。
- 更なる犠牲受容体(5a,5b)の使用を含むことを特徴とする請求項1から請求項4のいずれか一項に記載の方法。
- 前記犠牲受容体(5a)と前記更なる犠牲受容体(5b)とが異なる溶融温度を有することを特徴とする請求項5に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1003009A FR2962849B1 (fr) | 2010-07-16 | 2010-07-16 | Procede de dopage d'un materiau semi-conducteur |
FR1003009 | 2010-07-16 | ||
PCT/FR2011/000385 WO2012007653A1 (fr) | 2010-07-16 | 2011-07-01 | Procédé de dopage d'un matériau semi-conducteur |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013537511A true JP2013537511A (ja) | 2013-10-03 |
JP5833115B2 JP5833115B2 (ja) | 2015-12-16 |
Family
ID=43334566
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013519122A Expired - Fee Related JP5833115B2 (ja) | 2010-07-16 | 2011-07-01 | 半導体材料にドープするための方法 |
Country Status (11)
Country | Link |
---|---|
US (1) | US8900981B2 (ja) |
EP (1) | EP2593593B1 (ja) |
JP (1) | JP5833115B2 (ja) |
CN (1) | CN103119206B (ja) |
BR (1) | BR112013001064A2 (ja) |
CA (1) | CA2804613A1 (ja) |
EA (1) | EA023641B1 (ja) |
ES (1) | ES2528618T3 (ja) |
FR (1) | FR2962849B1 (ja) |
WO (1) | WO2012007653A1 (ja) |
ZA (1) | ZA201300367B (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106591942B (zh) * | 2016-12-30 | 2019-06-11 | 江西赛维Ldk太阳能高科技有限公司 | 多晶硅铸锭用坩埚及其制备方法和多晶硅锭及其制备方法 |
CN108360060B (zh) * | 2017-12-08 | 2019-07-09 | 中国电子科技集团公司第十三研究所 | 一种化合物晶体合成后旋转垂直温度梯度晶体生长装置 |
CN108360061B (zh) * | 2017-12-08 | 2019-07-09 | 中国电子科技集团公司第十三研究所 | 一种水平注入合成后旋转连续vgf晶体生长的方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11312683A (ja) * | 1998-04-28 | 1999-11-09 | Sumitomo Metal Ind Ltd | 半導体単結晶シリコンの製造方法 |
JP2002104898A (ja) * | 2000-09-28 | 2002-04-10 | Shin Etsu Handotai Co Ltd | シリコン結晶及びシリコン結晶ウエーハ並びにその製造方法 |
JP2004224582A (ja) * | 2003-01-20 | 2004-08-12 | Shin Etsu Handotai Co Ltd | 単結晶の製造方法 |
JP2009035455A (ja) * | 2007-08-02 | 2009-02-19 | Sumco Techxiv株式会社 | 半導体単結晶の製造装置 |
JP2009249262A (ja) * | 2008-04-10 | 2009-10-29 | Sumco Corp | シリコン単結晶の製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4789596A (en) * | 1987-11-27 | 1988-12-06 | Ethyl Corporation | Dopant coated bead-like silicon particles |
JPH0446097A (ja) * | 1990-06-11 | 1992-02-17 | Mitsubishi Materials Corp | 化合物半導体単結晶成長におけるドーピング方法 |
US5406905A (en) * | 1993-05-28 | 1995-04-18 | Simco/Ramic Corporation | Cast dopant for crystal growing |
US6179914B1 (en) * | 1999-02-02 | 2001-01-30 | Seh America, Inc. | Dopant delivery system and method |
DE10007179B4 (de) * | 2000-02-17 | 2004-08-19 | Siltronic Ag | Verfahren und Vorrichtung zum Dotieren einer Schmelze mit einem Dotierstoff |
DE102005032790A1 (de) * | 2005-06-06 | 2006-12-07 | Deutsche Solar Ag | Behälter mit Beschichtung und Herstellungsverfahren |
KR20100049078A (ko) * | 2007-07-20 | 2010-05-11 | 비피 코포레이션 노쓰 아메리카 인코포레이티드 | 시드 결정으로부터 캐스트 실리콘을 제조하는 방법 및 장치 |
-
2010
- 2010-07-16 FR FR1003009A patent/FR2962849B1/fr not_active Expired - Fee Related
-
2011
- 2011-07-01 CA CA2804613A patent/CA2804613A1/en not_active Abandoned
- 2011-07-01 EA EA201390127A patent/EA023641B1/ru not_active IP Right Cessation
- 2011-07-01 CN CN201180039656.9A patent/CN103119206B/zh not_active Expired - Fee Related
- 2011-07-01 JP JP2013519122A patent/JP5833115B2/ja not_active Expired - Fee Related
- 2011-07-01 WO PCT/FR2011/000385 patent/WO2012007653A1/fr active Application Filing
- 2011-07-01 EP EP11744038.8A patent/EP2593593B1/fr not_active Not-in-force
- 2011-07-01 US US13/810,622 patent/US8900981B2/en not_active Expired - Fee Related
- 2011-07-01 ES ES11744038.8T patent/ES2528618T3/es active Active
- 2011-08-01 BR BR112013001064A patent/BR112013001064A2/pt not_active IP Right Cessation
-
2013
- 2013-01-15 ZA ZA2013/00367A patent/ZA201300367B/en unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11312683A (ja) * | 1998-04-28 | 1999-11-09 | Sumitomo Metal Ind Ltd | 半導体単結晶シリコンの製造方法 |
JP2002104898A (ja) * | 2000-09-28 | 2002-04-10 | Shin Etsu Handotai Co Ltd | シリコン結晶及びシリコン結晶ウエーハ並びにその製造方法 |
JP2004224582A (ja) * | 2003-01-20 | 2004-08-12 | Shin Etsu Handotai Co Ltd | 単結晶の製造方法 |
JP2009035455A (ja) * | 2007-08-02 | 2009-02-19 | Sumco Techxiv株式会社 | 半導体単結晶の製造装置 |
JP2009249262A (ja) * | 2008-04-10 | 2009-10-29 | Sumco Corp | シリコン単結晶の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2012007653A8 (fr) | 2012-08-02 |
JP5833115B2 (ja) | 2015-12-16 |
EA201390127A1 (ru) | 2013-05-30 |
FR2962849A1 (fr) | 2012-01-20 |
EP2593593B1 (fr) | 2014-11-19 |
EP2593593A1 (fr) | 2013-05-22 |
WO2012007653A1 (fr) | 2012-01-19 |
CN103119206B (zh) | 2015-11-25 |
ES2528618T3 (es) | 2015-02-11 |
CA2804613A1 (en) | 2012-01-19 |
EA023641B1 (ru) | 2016-06-30 |
US20130115762A1 (en) | 2013-05-09 |
ZA201300367B (en) | 2013-09-25 |
US8900981B2 (en) | 2014-12-02 |
BR112013001064A2 (pt) | 2016-05-24 |
CN103119206A (zh) | 2013-05-22 |
FR2962849B1 (fr) | 2014-03-28 |
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