JP2013527930A5 - - Google Patents

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Publication number
JP2013527930A5
JP2013527930A5 JP2013509307A JP2013509307A JP2013527930A5 JP 2013527930 A5 JP2013527930 A5 JP 2013527930A5 JP 2013509307 A JP2013509307 A JP 2013509307A JP 2013509307 A JP2013509307 A JP 2013509307A JP 2013527930 A5 JP2013527930 A5 JP 2013527930A5
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JP
Japan
Prior art keywords
transistor
heating element
temperature
semiconductor chip
circuit
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Application number
JP2013509307A
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English (en)
Japanese (ja)
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JP2013527930A (ja
JP5901616B2 (ja
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Publication date
Priority claimed from US12/774,730 external-priority patent/US8384395B2/en
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Publication of JP2013527930A publication Critical patent/JP2013527930A/ja
Publication of JP2013527930A5 publication Critical patent/JP2013527930A5/ja
Application granted granted Critical
Publication of JP5901616B2 publication Critical patent/JP5901616B2/ja
Active legal-status Critical Current
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JP2013509307A 2010-05-06 2011-05-06 温度を制御するため及び半導体チップのテストを可能にするための回路 Active JP5901616B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/774,730 US8384395B2 (en) 2010-05-06 2010-05-06 Circuit for controlling temperature and enabling testing of a semiconductor chip
US12/774,730 2010-05-06
PCT/US2011/035600 WO2011140491A2 (en) 2010-05-06 2011-05-06 Circuit for controlling temperature and enabling testing of a semiconductor chip

Publications (3)

Publication Number Publication Date
JP2013527930A JP2013527930A (ja) 2013-07-04
JP2013527930A5 true JP2013527930A5 (enExample) 2014-06-26
JP5901616B2 JP5901616B2 (ja) 2016-04-13

Family

ID=44901536

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013509307A Active JP5901616B2 (ja) 2010-05-06 2011-05-06 温度を制御するため及び半導体チップのテストを可能にするための回路

Country Status (4)

Country Link
US (1) US8384395B2 (enExample)
JP (1) JP5901616B2 (enExample)
CN (1) CN102859373B (enExample)
WO (1) WO2011140491A2 (enExample)

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US20130126508A1 (en) * 2011-11-17 2013-05-23 Texas Instruments Incorporated Extending Radiation Tolerance By Localized Temperature Annealing Of Semiconductor Devices
US8569808B1 (en) 2012-04-06 2013-10-29 Taiwan Semiconductor Manufacturing Co., Ltd. Temperature stabilitized MEMS
US9651981B2 (en) 2012-08-09 2017-05-16 Infineon Technologies Austria Ag Integrated chip with heating element and reference circuit
US20140105246A1 (en) * 2012-10-11 2014-04-17 Easic Corporation Temperature Controlled Structured ASIC Manufactured on a 28 NM CMOS Process Lithographic Node
US9024657B2 (en) 2012-10-11 2015-05-05 Easic Corporation Architectural floorplan for a structured ASIC manufactured on a 28 NM CMOS process lithographic node or smaller
US9562943B2 (en) * 2012-11-19 2017-02-07 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer temperature sensing methods and related semiconductor wafer
CN103941172B (zh) * 2013-01-22 2016-12-28 中芯国际集成电路制造(上海)有限公司 半导体测试装置及测试方法
CN104101823B (zh) * 2013-04-02 2016-08-10 中芯国际集成电路制造(上海)有限公司 半导体测试结构及测试方法
US8760180B1 (en) * 2013-07-29 2014-06-24 Analog Test Engines Systems and methods mitigating temperature dependence of circuitry in electronic devices
US9507369B2 (en) * 2013-09-27 2016-11-29 Cavium, Inc. Dynamically adjusting supply voltage based on monitored chip temperature
JP2015154658A (ja) * 2014-02-18 2015-08-24 セイコーエプソン株式会社 回路装置及び電子機器
US9401643B1 (en) 2015-03-10 2016-07-26 International Business Machines Corporation Bias-temperature induced damage mitigation circuit
CN104808136A (zh) * 2015-05-18 2015-07-29 杭州士兰微电子股份有限公司 芯片温度与电流强度关联性的测试设备
JP6426552B2 (ja) * 2015-07-29 2018-11-21 日立オートモティブシステムズ株式会社 バーンイン試験装置及び方法
CN105445645B (zh) * 2015-12-14 2018-01-05 宁波大学 一种用于监测集成电路nbti老化效应的数字型监测电路
WO2018125045A1 (en) * 2016-12-27 2018-07-05 Intel Corporation Targeted burn-in on an integrated circuit
CN109932630B (zh) * 2017-12-15 2021-08-03 朋程科技股份有限公司 过温度检测电路及其测试方法
CN109710015B (zh) * 2018-12-29 2021-03-02 西安紫光国芯半导体有限公司 一种门延时稳定电路及方法
US11366154B2 (en) * 2019-07-31 2022-06-21 Globalfoundries U.S. Inc. Enabling of functional logic in IC using thermal sequence enabling test
KR20210021271A (ko) * 2019-08-17 2021-02-25 삼성전자주식회사 칩 국부적 열원을 이용한 이미지 센서 내의 열 쉐이딩을 감소시키기 위한 시스템 및 방법
WO2022029207A1 (en) * 2020-08-04 2022-02-10 Advantest Corporation Automated test equipments, handlers and methods for testing a device under test using an additional signaling
WO2023272700A1 (zh) * 2021-07-01 2023-01-05 华为技术有限公司 温度控制装置和方法
CN115061030B (zh) * 2022-05-06 2025-07-22 深圳格芯集成电路装备有限公司 保温运载机构、检测设备及保温方法
CN115798563A (zh) * 2022-10-21 2023-03-14 长鑫存储技术有限公司 测试芯片的方法、放热电路以及芯片
CN115794526B (zh) * 2023-01-05 2023-10-10 法特迪精密科技（苏州）有限公司 片上芯片高温老化测试插座控制系统及控制方法
CN119471327B (zh) * 2025-01-14 2025-03-25 安盈半导体技术(常州)有限公司 一种基于温度响应的芯片测试方法及测试系统

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JPH0812114B2 (ja) * 1985-10-09 1996-02-07 東京エレクトロン東北株式会社 デジタル温度検出装置
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US5233161A (en) * 1991-10-31 1993-08-03 Hughes Aircraft Company Method for self regulating CMOS digital microcircuit burn-in without ovens
JPH06216724A (ja) * 1993-01-20 1994-08-05 Mitsubishi Electric Corp コンパレータ装置及びそのクロック供給制御装置
DE4481362B4 (de) * 1994-11-29 2009-01-08 Advantest Corp. Temperaturkompensationsschaltung für IC-Baustein
US6590405B2 (en) * 1999-04-21 2003-07-08 Advantest, Corp CMOS integrated circuit and timing signal generator using same
JP2001174516A (ja) * 1999-12-17 2001-06-29 Toshiba Microelectronics Corp 半導体試験装置
US6861860B2 (en) * 2002-05-17 2005-03-01 Stmicroelectronics, Inc. Integrated circuit burn-in test system and associated methods
US6677800B1 (en) * 2002-10-17 2004-01-13 Richtek Technology Corp. Temperature sensing circuit
JP3762415B2 (ja) * 2004-06-07 2006-04-05 株式会社アドバンテスト バーンイン装置の状態診断方法
US7564274B2 (en) * 2005-02-24 2009-07-21 Icera, Inc. Detecting excess current leakage of a CMOS device
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US7852098B2 (en) * 2005-08-01 2010-12-14 Marvell World Trade Ltd. On-die heating circuit and control loop for rapid heating of the die
JP2008109243A (ja) * 2006-10-24 2008-05-08 Renesas Technology Corp Ｒｆ通信用半導体集積回路
CL2008003007A1 (es) 2007-10-12 2009-10-02 Bigtec Private Ltd Un micro chip con capas de ceramicas de coccion conjunta a baja temperatura (ltcc) formando una camara de reaccion, anillos conductores que rodean a la camara de reaccion y un calentador que suministra calor a los anillos, el metodo de fabricacion del micro chip y un micro dispositivo de reaccion en cadena de polimerasa (pcr).
JP2009103550A (ja) 2007-10-23 2009-05-14 Seiko Epson Corp 電子部品の温度制御装置及びｉｃハンドラ
JP2009109314A (ja) * 2007-10-30 2009-05-21 Olympus Corp 半導体装置および半導体装置の検査方法

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