JP5901616B2 - 温度を制御するため及び半導体チップのテストを可能にするための回路 - Google Patents

温度を制御するため及び半導体チップのテストを可能にするための回路 Download PDF

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JP5901616B2
JP5901616B2 JP2013509307A JP2013509307A JP5901616B2 JP 5901616 B2 JP5901616 B2 JP 5901616B2 JP 2013509307 A JP2013509307 A JP 2013509307A JP 2013509307 A JP2013509307 A JP 2013509307A JP 5901616 B2 JP5901616 B2 JP 5901616B2
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heating element
transistor
temperature
semiconductor chip
coupled
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JP2013527930A (ja
JP2013527930A5 (enExample
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カルナド ラヴィンドラ
カルナド ラヴィンドラ
プラサード サドヘール
プラサード サドヘール
エイ ジョナヴィトゥラ ラム
エイ ジョナヴィトゥラ ラム
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日本テキサス・インスツルメンツ株式会社
テキサス インスツルメンツ インコーポレイテッド
テキサス インスツルメンツ インコーポレイテッド
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/2872—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation
    • G01R31/2874—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to temperature
    • G01R31/2875—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to temperature related to heating
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/2856—Internal circuit aspects, e.g. built-in test features; Test chips; Measuring material aspects, e.g. electro migration [EM]

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  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2013509307A 2010-05-06 2011-05-06 温度を制御するため及び半導体チップのテストを可能にするための回路 Active JP5901616B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/774,730 US8384395B2 (en) 2010-05-06 2010-05-06 Circuit for controlling temperature and enabling testing of a semiconductor chip
US12/774,730 2010-05-06
PCT/US2011/035600 WO2011140491A2 (en) 2010-05-06 2011-05-06 Circuit for controlling temperature and enabling testing of a semiconductor chip

Publications (3)

Publication Number Publication Date
JP2013527930A JP2013527930A (ja) 2013-07-04
JP2013527930A5 JP2013527930A5 (enExample) 2014-06-26
JP5901616B2 true JP5901616B2 (ja) 2016-04-13

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JP2013509307A Active JP5901616B2 (ja) 2010-05-06 2011-05-06 温度を制御するため及び半導体チップのテストを可能にするための回路

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Country Link
US (1) US8384395B2 (enExample)
JP (1) JP5901616B2 (enExample)
CN (1) CN102859373B (enExample)
WO (1) WO2011140491A2 (enExample)

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US8569808B1 (en) 2012-04-06 2013-10-29 Taiwan Semiconductor Manufacturing Co., Ltd. Temperature stabilitized MEMS
US9651981B2 (en) 2012-08-09 2017-05-16 Infineon Technologies Austria Ag Integrated chip with heating element and reference circuit
US20140105246A1 (en) * 2012-10-11 2014-04-17 Easic Corporation Temperature Controlled Structured ASIC Manufactured on a 28 NM CMOS Process Lithographic Node
US9024657B2 (en) 2012-10-11 2015-05-05 Easic Corporation Architectural floorplan for a structured ASIC manufactured on a 28 NM CMOS process lithographic node or smaller
US9562943B2 (en) * 2012-11-19 2017-02-07 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer temperature sensing methods and related semiconductor wafer
CN103941172B (zh) * 2013-01-22 2016-12-28 中芯国际集成电路制造(上海)有限公司 半导体测试装置及测试方法
CN104101823B (zh) * 2013-04-02 2016-08-10 中芯国际集成电路制造(上海)有限公司 半导体测试结构及测试方法
US8760180B1 (en) * 2013-07-29 2014-06-24 Analog Test Engines Systems and methods mitigating temperature dependence of circuitry in electronic devices
US9507369B2 (en) * 2013-09-27 2016-11-29 Cavium, Inc. Dynamically adjusting supply voltage based on monitored chip temperature
JP2015154658A (ja) * 2014-02-18 2015-08-24 セイコーエプソン株式会社 回路装置及び電子機器
US9401643B1 (en) 2015-03-10 2016-07-26 International Business Machines Corporation Bias-temperature induced damage mitigation circuit
CN104808136A (zh) * 2015-05-18 2015-07-29 杭州士兰微电子股份有限公司 芯片温度与电流强度关联性的测试设备
JP6426552B2 (ja) * 2015-07-29 2018-11-21 日立オートモティブシステムズ株式会社 バーンイン試験装置及び方法
CN105445645B (zh) * 2015-12-14 2018-01-05 宁波大学 一种用于监测集成电路nbti老化效应的数字型监测电路
WO2018125045A1 (en) * 2016-12-27 2018-07-05 Intel Corporation Targeted burn-in on an integrated circuit
CN109932630B (zh) * 2017-12-15 2021-08-03 朋程科技股份有限公司 过温度检测电路及其测试方法
CN109710015B (zh) * 2018-12-29 2021-03-02 西安紫光国芯半导体有限公司 一种门延时稳定电路及方法
US11366154B2 (en) * 2019-07-31 2022-06-21 Globalfoundries U.S. Inc. Enabling of functional logic in IC using thermal sequence enabling test
KR20210021271A (ko) * 2019-08-17 2021-02-25 삼성전자주식회사 칩 국부적 열원을 이용한 이미지 센서 내의 열 쉐이딩을 감소시키기 위한 시스템 및 방법
WO2022029207A1 (en) * 2020-08-04 2022-02-10 Advantest Corporation Automated test equipments, handlers and methods for testing a device under test using an additional signaling
WO2023272700A1 (zh) * 2021-07-01 2023-01-05 华为技术有限公司 温度控制装置和方法
CN115061030B (zh) * 2022-05-06 2025-07-22 深圳格芯集成电路装备有限公司 保温运载机构、检测设备及保温方法
CN115798563A (zh) * 2022-10-21 2023-03-14 长鑫存储技术有限公司 测试芯片的方法、放热电路以及芯片
CN115794526B (zh) * 2023-01-05 2023-10-10 法特迪精密科技（苏州）有限公司 片上芯片高温老化测试插座控制系统及控制方法
CN119471327B (zh) * 2025-01-14 2025-03-25 安盈半导体技术(常州)有限公司 一种基于温度响应的芯片测试方法及测试系统

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Also Published As

Publication number Publication date
US20110273186A1 (en) 2011-11-10
CN102859373B (zh) 2016-01-27
JP2013527930A (ja) 2013-07-04
CN102859373A (zh) 2013-01-02
US8384395B2 (en) 2013-02-26
WO2011140491A2 (en) 2011-11-10
WO2011140491A3 (en) 2012-03-01

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