JP2013527596A - 原子層堆積による量子閉じ込め構造の照射誘起核形成 - Google Patents
原子層堆積による量子閉じ込め構造の照射誘起核形成 Download PDFInfo
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Abstract
【解決手段】本発明の方法は、堆積装置を用いて、基板上に材料の層を堆積するステップを含み、前記堆積ステップは、前記量子閉じ込め構造のサイズおよび/または形状を制御するべく前記材料の層における量子閉じ込め構造の核形成を変更するために、前記堆積のサイクルの前、その最中、および/またはその後に前記層に対し照射を行うことを含む。該量子閉じ込め構造は、量子井戸、ナノワイヤ、ナノチューブ、または量子ドットを含み得る。前記照射は、前記堆積装置に対してin−situまたはex−situで行われ得る。前記照射は、光子、電子、またはイオンの照射を含み得る。前記堆積には、原子層堆積、化学蒸着法、MOCVD法、分子線エピタキシ、蒸着、スパッタリング、パルスレーザ堆積が含まれ得る。
【選択図】図1
Description
基板を照射するステップと、
イオン照射源を使用するステップであって、該イオン照射が前記基板の表面を改変する、該ステップと、
改変された前記基板の表面上に材料の層を堆積するべく堆積装置を使用するステップであって、改変された前記基板の表面は、前記材料の層内部の量子閉じ込め構造の核形成を促進する、該ステップとを含むことを特徴とする方法が含まれる。
Si−OH+Pb(tmhd)2→Si−O−tmhd+H−tmhd (1)
と記述できる。
Si−O−Pb−tmhd+H2S→Si−O−Pb−SH+H−tmhd (2)
と記述できる。
Claims (41)
- 量子閉じ込め構造の製造方法であって、
(a)堆積装置を用いて、基板上に材料の層を堆積するステップを含み、
前記堆積ステップは、前記量子閉じ込め構造の(i)サイズ、(ii)形状、または(i)サイズ及び(ii)形状を制御するべく前記材料の層における量子閉じ込め構造の核形成を変更するために、(i)前記堆積サイクル前、(ii)前記堆積サイクル中、(iii)前記堆積サイクル後、(i)前記堆積サイクル前及び(ii)前記堆積サイクル中、(i)前記堆積サイクル前及び(iii)前記堆積サイクル後、(ii)前記堆積サイクル中及び(iii)前記堆積サイクル後、または、(i)前記堆積サイクル前及び(ii)前記堆積サイクル中及び(iii)前記堆積サイクル後に前記材料の層に対し照射を行うことを含むことを特徴とする方法。 - 前記量子閉じ込め構造は、量子井戸、ナノワイヤ、ナノチューブ、及び量子ドットからなる群から選択されることを特徴とする請求項1に記載の方法。
- 前記基板は、1〜5000の範囲にあるアスペクト比を有する三次元トポロジーを有することを特徴とする請求項1に記載の方法。
- 前記照射は、前記堆積装置に対してin−situまたはex−situで行われることを特徴とする請求項1に記載の方法。
- 前記照射が、光子、電子、及びイオンからなる群から選択された照射を含むことを特徴とする請求項1に記載の方法。
- 前記照射の使用が、前記材料の層の(i)形態、(ii)核形成密度、(iii)化学的性質、(i)形態及び(ii)核形成密度、(i)形態及び(iii)化学的性質、(ii)核形成密度及び(iii)化学的性質、または(i)形態及び(ii)核形成密度及び(iii)化学的性質に影響を与えるべくさらに処置されることを特徴とする請求項1に記載の方法。
- 前記材料の層のバンドギャップは、量子閉じ込め構造の寸法のサイズを制御することによって調節されることを特徴とする請求項1に記載の方法。
- 前記材料の層のバンドギャップは、量子閉じ込め構造を外囲する材料の特性を制御することによって調節されることを特徴とする請求項1に記載の方法。
- テンプレートを使用した成長を用いて、量子閉じ込め構造を形成することを特徴とする請求項1に記載の方法。
- 前記テンプレートを使用した成長は、陽極酸化アルミニウム(AAO)、またはトラック・エッチングを利用して製造したポリカーボネート膜を使用することを含み、
前記量子閉じ込め構造は、量子ドット、ナノワイヤ、またはナノチューブを含むことを特徴とする請求項9に記載の方法。 - 前記堆積が、原子層堆積、化学蒸着法、MOCVD法、分子線エピタキシ、蒸着、スパッタリング、及びパルスレーザ堆積からなる群から選択されることを特徴とする請求項1に記載の方法。
- 前記量子閉じ込め構造は、量子ドットを含み、
前記量子ドットの核形成は、前駆物質、リアクタ温度、基質材料、リアクタ圧力、環境ガス、前駆物質パルス時間、及び反応時間からなる群から選択されるALD堆積条件によって制御されることを特徴とする請求項1に記載の方法。 - 前記材料の層の表面上での化学反応は、環境ガス及び照射を用いて誘導され、
前記環境ガスには酸化性または還元性化学種が含まれ、
前記化学種が照射にさらされると触媒された化学反応が前記材料の層の上に形成され、
前記量子閉じ込め構造の核形成は、化学結合の切断、化学結合の形成、または前記材料の層の化学量論的影響による影響をうけることを特徴とする請求項1に記載の方法。 - 前記照射は、照射から前記材料の層に運動エネルギーを移動するべく配置され、
前記材料の層の表面温度の上昇が与えられ、
前記材料の層の表面温度の上昇が、表面拡散、昇華、蒸発、合着、及びオストワルト熟成からなる群から選択される前記材料の層の特性を制御することを特徴とする請求項1に記載の方法。 - 前記照射は、化学結合の切断を含む前記材料の層の化学的変化を引き起こすべく配置され、
前記材料の層の表面上の新たな形態の形成がなされることを特徴とする請求項1に記載の方法。 - 前記照射は、前記材料の層の表面上に静電気の帯電を生成するべく配置されることを特徴とする請求項1に記載の方法。
- 前記照射は、前記材料の層の表面の形態を粗面化するべく配置され、
前記粗面化された形態は、核形成のための優先部位を生成し、表面拡散プロセスを制御することによって量子閉じ込め構造の核形成の挙動を制御することを特徴とする請求項1に記載の方法。 - 前記照射は、ランプ及びレーザーからなる群から選択される光子源を含むことを特徴とする請求項1に記載の方法。
- 前記照射は、前記材料の層の表面の温度を上昇させるべく配置され、
前記材料の層の上昇した表面温度により、前記材料の層の表面の化学結合が切断されて前記材料の層または前記基板における拡散が促進され、
量子井戸、量子ナノワイヤ、または量子ドットのALDによる形成が制御されることを特徴とする請求項1に記載の方法。 - 前記照射は、電界放出ガン及び熱電子源からなる群から選択される電子源を含むことを特徴とする請求項1に記載の方法。
- 前記照射は、イオン照射を含み、
前記イオン照射は、前記材料の層または前記基板に運動エネルギーを移動させるべく使用され、
前記イオン照射は、前記基板の形態を改変し、および/または前記材料の層の表面上に静電荷を生成するために使用され、
前記量子閉じ込め構造の核形成サイズ及び密度が制御されることを特徴とする請求項1に記載の方法。 - 前記照射は、イオン照射を含み、
前記イオン照射は、堆積される材料と前記材料の層または前記基板との間の静電相互作用を制御するべく使用され、
前記相互作用は、前記基板の形態を改変するか、または前記材料の層の表面上に静電荷を生成し、
前記量子閉じ込め構造の核形成サイズ及び密度が制御されることを特徴とする請求項1に記載の方法。 - 前記照射は、受け取られる照射化学種の照射源及び照射方向を制御することによってパターン形成され、
前記パターンは量子閉じ込め構造の成長を制御することを特徴とする請求項1に記載の方法。 - 照射される前記材料の層があるパターンにマスクされ、
前記量子閉じ込め構造の成長は、前記マスクのパターンによって制御されることを特徴とする請求項1に記載の方法。 - 量子閉じ込め構造の製造方法であって、
(a)基板を照射するステップと、
(b)イオン照射源を使用するステップであって、該イオン照射が前記基板の表面を改変する、該ステップと、
(c)改変された前記基板の表面上に材料の層を堆積するべく堆積装置を使用するステップであって、改変された前記基板の表面は、前記材料の層内部の量子閉じ込め構造の核形成を促進する、該ステップとを含むことを特徴とする方法 - 前記量子閉じ込め構造は、量子井戸、ナノワイヤ、ナノチューブ、及び量子ドットからなる群から選択されることを特徴とする請求項25に記載の方法。
- 前記基板は、1〜5000の範囲にあるアスペクト比を有する三次元トポロジーを有することを特徴とする請求項25に記載の方法。
- 前記照射は、前記堆積装置に対してin−situまたはex−situで行われることを特徴とする請求項25に記載の方法。
- 前記照射の使用が、前記材料の層の(i)形態、(ii)核形成密度、(iii)化学的性質、(i)形態及び(ii)核形成密度、(i)形態及び(iii)化学的性質、(ii)核形成密度及び(iii)化学的性質、または(i)形態及び(ii)核形成密度及び(iii)化学的性質に影響を与えるべくさらに処置されることを特徴とする請求項25に記載の方法。
- 前記材料の層のバンドギャップは、量子閉じ込め構造の寸法のサイズを制御することによって調節されることを特徴とする請求項25に記載の方法。
- 前記材料の層のバンドギャップは、量子閉じ込め構造を外囲する材料の特性を制御することによって調節されることを特徴とする請求項25に記載の方法。
- テンプレートを使用した成長を用いて、量子閉じ込め構造を形成することを特徴とする請求項25に記載の方法。
- 前記テンプレートを使用した成長は、陽極酸化アルミニウム(AAO)、またはトラック・エッチングを利用して製造したポリカーボネート膜を使用することを含み、
前記量子閉じ込め構造は、量子ドット、ナノワイヤ、またはナノチューブを含むことを特徴とする請求項32に記載の方法。 - 前記堆積が、原子層堆積、化学蒸着法、MOCVD法、分子線エピタキシ、蒸着、スパッタリング、及びパルスレーザ堆積からなる群から選択されることを特徴とする請求項25に記載の方法。
- 前記量子閉じ込め構造は、量子ドットを含み、
前記量子ドットの核形成は、前駆物質、リアクタ温度、基質材料、リアクタ圧力、環境ガス、前駆物質パルス時間、及び反応時間からなる群から選択されるALD堆積条件によって制御されることを特徴とする請求項25に記載の方法。 - 前記材料の層の表面上での化学反応は、環境ガス及び照射を用いて誘導され、
前記環境ガスには酸化性または還元性化学種が含まれ、
前記化学種が照射にさらされると触媒された化学反応が前記材料の層の上に形成され、
前記量子閉じ込め構造の核形成は、化学結合の切断、化学結合の形成、または前記照射による前記材料の層の化学量論的影響による影響をうけることを特徴とする請求項25に記載の方法。 - 前記照射は、化学結合の切断を含む前記材料の層の化学的変化を引き起こすべく配置され、
前記材料の層の表面上の新たな形態の形成がなされることを特徴とする請求項25に記載の方法。 - 前記照射は、前記材料の層の表面上に静電気の帯電を生成するべく配置されることを特徴とする請求項25に記載の方法。
- 前記照射は、前記材料の層の表面の形態を粗面化するべく配置され、
前記粗面化された形態は、核形成のための優先部位を生成し、表面拡散プロセスを制御することによって量子閉じ込め構造の核形成の挙動を制御することを特徴とする請求項25に記載の方法。 - 前記イオン照射は、前記材料の層または前記基板に運動エネルギーを移動させるべく使用され、
前記イオン照射は、前記基板の形態を改変し、および/または前記材料の層の表面上に静電荷を生成するために使用され、
前記量子閉じ込め構造の核形成サイズ及び密度が制御されることを特徴とする請求項25に記載の方法。 - 前記イオン照射は、堆積される材料と前記材料の層または前記基板との間の静電相互作用を制御するべく使用され、
前記相互作用は、前記基板の形態を改変するか、または前記材料の層の表面上に静電荷を生成し、
前記量子閉じ込め構造の核形成サイズ及び密度が制御されることを特徴とする請求項25に記載の方法。
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PCT/US2011/000542 WO2011119231A2 (en) | 2010-03-24 | 2011-03-24 | Irradiation assisted nucleation of quantum confinements by atomic layer deposition |
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CN105810848B (zh) * | 2016-03-16 | 2017-12-19 | 京东方科技集团股份有限公司 | 一种量子点层的制备方法及含有量子点层的qled显示装置、制备方法 |
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