JP2013525600A - 火花の拡散が空間的に制限された火花蒸着のためのターゲット - Google Patents
火花の拡散が空間的に制限された火花蒸着のためのターゲット Download PDFInfo
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- JP2013525600A JP2013525600A JP2013504138A JP2013504138A JP2013525600A JP 2013525600 A JP2013525600 A JP 2013525600A JP 2013504138 A JP2013504138 A JP 2013504138A JP 2013504138 A JP2013504138 A JP 2013504138A JP 2013525600 A JP2013525600 A JP 2013525600A
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- 230000008021 deposition Effects 0.000 title description 5
- 238000009792 diffusion process Methods 0.000 title description 2
- 239000000463 material Substances 0.000 claims abstract description 19
- 238000000465 moulding Methods 0.000 claims description 6
- 230000005484 gravity Effects 0.000 claims description 5
- 239000000696 magnetic material Substances 0.000 claims description 5
- 230000004907 flux Effects 0.000 description 12
- 238000000576 coating method Methods 0.000 description 8
- 239000013077 target material Substances 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32614—Consumable cathodes for arc discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3444—Associated circuits
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Coating By Spraying Or Casting (AREA)
Abstract
Description
Claims (5)
- 蒸発することが意図される表面を実質的に1つの平面に含む、蒸発されるべき材料からなる第1の本体(3)を備えるアークソース用のターゲットであって、前記表面は当該平面で中央領域を取り囲んでいる、そのようなターゲットにおいて、前記中央領域には前記第1の本体(3)から電気的に絶縁された、好ましくは円板形状で構成された第2の本体(7)が設けられており、それにより前記第2の本体(7)から火花を維持するための電子が実質的に提供され得ないようになっていることを特徴とするターゲット。
- 前記第1の本体(3)は前記第2の本体(7)が中に沈降していて絶縁ピン(9)により取り付けられた成形部(5)を前記中央領域に含んでおり、前記第1の本体(3)と前記第2の本体(9)の間の間隔は1.5mmから3.5mmの間の1つまたは複数の値をとることを特徴とする、請求項1に記載のターゲット。
- 前記本体(7)は少なくとも前記成形部(5)から突き出す表面に前記本体(3)の材料に相当する材料を有していることを特徴とする、請求項2に記載のターゲット。
- 前記第2の本体(7)は少なくとも1つの成形部(13)を含んでおり、それにより軸上に位置している前記第2の本体(7)の重心が穴の外套面の高さに位置するようになっていることを特徴とする、請求項2または3に記載のターゲット。
- 前記第2の本体は軟磁性材料で製作されていることを特徴とする、先行請求項のうちいずれか1項に記載のターゲット。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US32492910P | 2010-04-16 | 2010-04-16 | |
US61/324,929 | 2010-04-16 | ||
DE102010020737.3 | 2010-05-17 | ||
DE102010020737A DE102010020737A1 (de) | 2010-05-17 | 2010-05-17 | Target für Funkenverdampfung mit räumlicher Begrenzung der Ausbreitung des Funkens |
PCT/EP2011/000057 WO2011128004A1 (de) | 2010-04-16 | 2011-01-10 | Target für funkenverdampfung mit räumlicher begrenzung der ausbreitung des funkens |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2013525600A true JP2013525600A (ja) | 2013-06-20 |
JP2013525600A5 JP2013525600A5 (ja) | 2014-01-09 |
JP5757991B2 JP5757991B2 (ja) | 2015-08-05 |
Family
ID=43735926
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013504138A Active JP5757991B2 (ja) | 2010-04-16 | 2011-01-10 | 火花の拡散が空間的に制限された火花蒸着のためのターゲット |
Country Status (12)
Country | Link |
---|---|
US (1) | US9657389B2 (ja) |
EP (1) | EP2559050B1 (ja) |
JP (1) | JP5757991B2 (ja) |
KR (1) | KR101784540B1 (ja) |
CN (1) | CN102822938B (ja) |
BR (1) | BR112012026552B1 (ja) |
CA (1) | CA2796394C (ja) |
DE (1) | DE102010020737A1 (ja) |
MX (1) | MX338452B (ja) |
RU (1) | RU2562909C2 (ja) |
TW (1) | TWI544101B (ja) |
WO (1) | WO2011128004A1 (ja) |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62218562A (ja) * | 1986-03-19 | 1987-09-25 | Fujitsu Ltd | スパツタリング装置 |
JPH0925563A (ja) * | 1995-07-11 | 1997-01-28 | Erich Bergmann | プラズマ促進物理蒸着装置 |
JP2002525431A (ja) * | 1998-09-14 | 2002-08-13 | ユナキス・トレーディング・アクチェンゲゼルシャフト | アーク蒸化室用ターゲット配置 |
JP2002541335A (ja) * | 1999-04-12 | 2002-12-03 | ゴロコフスキー、ウラジミール・アイ | 矩形陰極アーク源およびアークスポットの指向方法 |
JP2005126737A (ja) * | 2003-10-21 | 2005-05-19 | Riken Corp | アーク式蒸発源 |
US20080110749A1 (en) * | 2006-05-16 | 2008-05-15 | Siegfried Krassnitzer | Arc source and magnet configuration |
JP2010031371A (ja) * | 2008-07-23 | 2010-02-12 | Seagate Technology Llc | スパッタリング装置、およびスパッタリング装置を介してターゲットから基板上へ材料をスパッタリングする方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5298136A (en) * | 1987-08-18 | 1994-03-29 | Regents Of The University Of Minnesota | Steered arc coating with thick targets |
DE4401986A1 (de) * | 1994-01-25 | 1995-07-27 | Dresden Vakuumtech Gmbh | Verfahren zum Betreiben eines Vakuumlichtbogenverdampfers und Stromversorgungseinrichtung dafür |
DE59712307D1 (de) * | 1996-12-21 | 2005-06-16 | Singulus Technologies Ag | Vorrichtung zur kathodenzerstäubung |
US6783638B2 (en) * | 2001-09-07 | 2004-08-31 | Sputtered Films, Inc. | Flat magnetron |
DE60315007D1 (de) * | 2002-03-23 | 2007-08-30 | Metal Nanopowders Ltd | Verfahren zur erzeugung von pulver |
US20060049041A1 (en) * | 2004-08-20 | 2006-03-09 | Jds Uniphase Corporation | Anode for sputter coating |
-
2010
- 2010-05-17 DE DE102010020737A patent/DE102010020737A1/de not_active Withdrawn
-
2011
- 2011-01-10 KR KR1020127026973A patent/KR101784540B1/ko active IP Right Grant
- 2011-01-10 JP JP2013504138A patent/JP5757991B2/ja active Active
- 2011-01-10 US US13/641,499 patent/US9657389B2/en active Active
- 2011-01-10 CA CA2796394A patent/CA2796394C/en active Active
- 2011-01-10 WO PCT/EP2011/000057 patent/WO2011128004A1/de active Application Filing
- 2011-01-10 BR BR112012026552-0A patent/BR112012026552B1/pt active IP Right Grant
- 2011-01-10 MX MX2012012055A patent/MX338452B/es active IP Right Grant
- 2011-01-10 EP EP11701194.0A patent/EP2559050B1/de active Active
- 2011-01-10 RU RU2012148715/07A patent/RU2562909C2/ru active
- 2011-01-10 CN CN201180019323.XA patent/CN102822938B/zh active Active
- 2011-04-14 TW TW100112896A patent/TWI544101B/zh active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62218562A (ja) * | 1986-03-19 | 1987-09-25 | Fujitsu Ltd | スパツタリング装置 |
JPH0925563A (ja) * | 1995-07-11 | 1997-01-28 | Erich Bergmann | プラズマ促進物理蒸着装置 |
JP2002525431A (ja) * | 1998-09-14 | 2002-08-13 | ユナキス・トレーディング・アクチェンゲゼルシャフト | アーク蒸化室用ターゲット配置 |
JP2002541335A (ja) * | 1999-04-12 | 2002-12-03 | ゴロコフスキー、ウラジミール・アイ | 矩形陰極アーク源およびアークスポットの指向方法 |
JP2005126737A (ja) * | 2003-10-21 | 2005-05-19 | Riken Corp | アーク式蒸発源 |
US20080110749A1 (en) * | 2006-05-16 | 2008-05-15 | Siegfried Krassnitzer | Arc source and magnet configuration |
JP2010031371A (ja) * | 2008-07-23 | 2010-02-12 | Seagate Technology Llc | スパッタリング装置、およびスパッタリング装置を介してターゲットから基板上へ材料をスパッタリングする方法 |
Also Published As
Publication number | Publication date |
---|---|
KR101784540B1 (ko) | 2017-10-11 |
TWI544101B (zh) | 2016-08-01 |
CN102822938A (zh) | 2012-12-12 |
US9657389B2 (en) | 2017-05-23 |
RU2012148715A (ru) | 2014-05-27 |
CA2796394A1 (en) | 2011-10-20 |
DE102010020737A1 (de) | 2011-11-17 |
EP2559050B1 (de) | 2017-06-07 |
MX338452B (es) | 2016-04-18 |
RU2562909C2 (ru) | 2015-09-10 |
MX2012012055A (es) | 2012-12-17 |
EP2559050A1 (de) | 2013-02-20 |
JP5757991B2 (ja) | 2015-08-05 |
CA2796394C (en) | 2019-07-09 |
WO2011128004A1 (de) | 2011-10-20 |
TW201207141A (en) | 2012-02-16 |
CN102822938B (zh) | 2016-05-04 |
BR112012026552A2 (pt) | 2016-07-12 |
BR112012026552B1 (pt) | 2022-01-11 |
KR20130064045A (ko) | 2013-06-17 |
US20130126348A1 (en) | 2013-05-23 |
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