MX338452B - Objetivo para vaporizacion por chispa con limitacion fisica de la propagacion de la chispa. - Google Patents

Objetivo para vaporizacion por chispa con limitacion fisica de la propagacion de la chispa.

Info

Publication number
MX338452B
MX338452B MX2012012055A MX2012012055A MX338452B MX 338452 B MX338452 B MX 338452B MX 2012012055 A MX2012012055 A MX 2012012055A MX 2012012055 A MX2012012055 A MX 2012012055A MX 338452 B MX338452 B MX 338452B
Authority
MX
Mexico
Prior art keywords
spark
target
propogation
vaporization
physical limiting
Prior art date
Application number
MX2012012055A
Other languages
English (en)
Other versions
MX2012012055A (es
Inventor
Siegfried Krassnitzer
Juerg Hagmann
Original Assignee
Oerlikon Surface Solutions Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oerlikon Surface Solutions Ag filed Critical Oerlikon Surface Solutions Ag
Publication of MX2012012055A publication Critical patent/MX2012012055A/es
Publication of MX338452B publication Critical patent/MX338452B/es

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C23C14/325—Electric arc evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32614—Consumable cathodes for arc discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3444—Associated circuits

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Coating By Spraying Or Casting (AREA)

Abstract

La presente invención se refiere a un objetivo para una fuente ARC que tiene un primer cuerpo (3) compuesto de un material que se vaporizará, el cual comprende esencialmente una superficie que está destinada a vaporizarse en un plano, donde la superficie rodea un área central en este plano, que se caracteriza porque un segundo cuerpo (7) se proporciona en el área central, cuyo segundo cuerpo (7) está preferiblemente en la forma de un disco y está aislado eléctricamente del primer cuerpo (3), para que el segundo cuerpo (7) no pueda proporcionar esencialmente los electrones para el mantenimiento de una chispa.
MX2012012055A 2010-04-16 2011-01-10 Objetivo para vaporizacion por chispa con limitacion fisica de la propagacion de la chispa. MX338452B (es)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US32492910P 2010-04-16 2010-04-16
DE102010020737A DE102010020737A1 (de) 2010-05-17 2010-05-17 Target für Funkenverdampfung mit räumlicher Begrenzung der Ausbreitung des Funkens
PCT/EP2011/000057 WO2011128004A1 (de) 2010-04-16 2011-01-10 Target für funkenverdampfung mit räumlicher begrenzung der ausbreitung des funkens

Publications (2)

Publication Number Publication Date
MX2012012055A MX2012012055A (es) 2012-12-17
MX338452B true MX338452B (es) 2016-04-18

Family

ID=43735926

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2012012055A MX338452B (es) 2010-04-16 2011-01-10 Objetivo para vaporizacion por chispa con limitacion fisica de la propagacion de la chispa.

Country Status (12)

Country Link
US (1) US9657389B2 (es)
EP (1) EP2559050B1 (es)
JP (1) JP5757991B2 (es)
KR (1) KR101784540B1 (es)
CN (1) CN102822938B (es)
BR (1) BR112012026552B1 (es)
CA (1) CA2796394C (es)
DE (1) DE102010020737A1 (es)
MX (1) MX338452B (es)
RU (1) RU2562909C2 (es)
TW (1) TWI544101B (es)
WO (1) WO2011128004A1 (es)

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62218562A (ja) * 1986-03-19 1987-09-25 Fujitsu Ltd スパツタリング装置
US5298136A (en) 1987-08-18 1994-03-29 Regents Of The University Of Minnesota Steered arc coating with thick targets
DE4401986A1 (de) 1994-01-25 1995-07-27 Dresden Vakuumtech Gmbh Verfahren zum Betreiben eines Vakuumlichtbogenverdampfers und Stromversorgungseinrichtung dafür
CH689558A5 (de) * 1995-07-11 1999-06-15 Erich Bergmann Bedampfungsanlage und Verdampfereinheit.
US6338781B1 (en) 1996-12-21 2002-01-15 Singulus Technologies Ag Magnetron sputtering cathode with magnet disposed between two yoke plates
WO2000016373A1 (de) 1998-09-14 2000-03-23 Unaxis Trading Ag Targetanordnung für eine arc-verdampfungs-kammer
CA2268659C (en) * 1999-04-12 2008-12-30 Vladimir I. Gorokhovsky Rectangular cathodic arc source and method of steering an arc spot
US6783638B2 (en) * 2001-09-07 2004-08-31 Sputtered Films, Inc. Flat magnetron
ATE367232T1 (de) * 2002-03-23 2007-08-15 Metal Nanopowders Ltd Verfahren zur erzeugung von pulver
JP2005126737A (ja) * 2003-10-21 2005-05-19 Riken Corp アーク式蒸発源
US20060049041A1 (en) * 2004-08-20 2006-03-09 Jds Uniphase Corporation Anode for sputter coating
EP2466614A3 (de) * 2006-05-16 2013-05-22 Oerlikon Trading AG, Trübbach Arcquelle und Magnetanordnung
US20100018857A1 (en) * 2008-07-23 2010-01-28 Seagate Technology Llc Sputter cathode apparatus allowing thick magnetic targets

Also Published As

Publication number Publication date
RU2562909C2 (ru) 2015-09-10
TW201207141A (en) 2012-02-16
JP2013525600A (ja) 2013-06-20
TWI544101B (zh) 2016-08-01
MX2012012055A (es) 2012-12-17
CN102822938A (zh) 2012-12-12
EP2559050B1 (de) 2017-06-07
JP5757991B2 (ja) 2015-08-05
EP2559050A1 (de) 2013-02-20
US20130126348A1 (en) 2013-05-23
BR112012026552B1 (pt) 2022-01-11
KR20130064045A (ko) 2013-06-17
CA2796394C (en) 2019-07-09
BR112012026552A2 (pt) 2016-07-12
DE102010020737A1 (de) 2011-11-17
US9657389B2 (en) 2017-05-23
RU2012148715A (ru) 2014-05-27
CN102822938B (zh) 2016-05-04
CA2796394A1 (en) 2011-10-20
KR101784540B1 (ko) 2017-10-11
WO2011128004A1 (de) 2011-10-20

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Owner name: SOLENIS TECHNOLOGIES CAYMAN, L.P.

FG Grant or registration