JP2013520839A5 - - Google Patents

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Publication number
JP2013520839A5
JP2013520839A5 JP2012555025A JP2012555025A JP2013520839A5 JP 2013520839 A5 JP2013520839 A5 JP 2013520839A5 JP 2012555025 A JP2012555025 A JP 2012555025A JP 2012555025 A JP2012555025 A JP 2012555025A JP 2013520839 A5 JP2013520839 A5 JP 2013520839A5
Authority
JP
Japan
Prior art keywords
material layer
conductive material
electrically insulating
insulating material
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012555025A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013520839A (ja
Filing date
Publication date
Priority claimed from US12/713,264 external-priority patent/US8803203B2/en
Application filed filed Critical
Publication of JP2013520839A publication Critical patent/JP2013520839A/ja
Publication of JP2013520839A5 publication Critical patent/JP2013520839A5/ja
Pending legal-status Critical Current

Links

JP2012555025A 2010-02-26 2011-02-10 内側にへこんだ形状を含んだ縦型トランジスタ Pending JP2013520839A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/713,264 2010-02-26
US12/713,264 US8803203B2 (en) 2010-02-26 2010-02-26 Transistor including reentrant profile
PCT/US2011/024310 WO2011106165A1 (en) 2010-02-26 2011-02-10 Vertical transistor including reentrant profile

Publications (2)

Publication Number Publication Date
JP2013520839A JP2013520839A (ja) 2013-06-06
JP2013520839A5 true JP2013520839A5 (cg-RX-API-DMAC10.html) 2014-02-06

Family

ID=43875263

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012555025A Pending JP2013520839A (ja) 2010-02-26 2011-02-10 内側にへこんだ形状を含んだ縦型トランジスタ

Country Status (7)

Country Link
US (2) US8803203B2 (cg-RX-API-DMAC10.html)
EP (1) EP2539924B1 (cg-RX-API-DMAC10.html)
JP (1) JP2013520839A (cg-RX-API-DMAC10.html)
KR (1) KR20120114372A (cg-RX-API-DMAC10.html)
CN (1) CN102782821B (cg-RX-API-DMAC10.html)
BR (1) BR112012019907A2 (cg-RX-API-DMAC10.html)
WO (1) WO2011106165A1 (cg-RX-API-DMAC10.html)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012094357A2 (en) * 2011-01-07 2012-07-12 Eastman Kodak Company Transistor including multiple reentrant profiles
US8492769B2 (en) * 2011-01-07 2013-07-23 Eastman Kodak Company Transistor including multi-layer reentrant profile
US8962989B2 (en) 2011-02-03 2015-02-24 Solar Junction Corporation Flexible hermetic semiconductor solar cell package with non-hermetic option
US8273654B1 (en) * 2011-09-29 2012-09-25 Eastman Kodak Company Producing a vertical transistor including reentrant profile
US9006736B2 (en) * 2013-07-12 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9117914B1 (en) * 2014-03-06 2015-08-25 Eastman Kodak Company VTFT with polymer core
US9123815B1 (en) * 2014-03-06 2015-09-01 Eastman Kodak Company VTFTs including offset electrodes
US9147770B1 (en) * 2014-03-06 2015-09-29 Eastman Kodak Company VTFT with extended electrode
US20150287831A1 (en) * 2014-04-08 2015-10-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device including semiconductor device
US9691997B2 (en) * 2014-06-11 2017-06-27 Eastman Kodak Company Devices having dielectric layers with thiosulfate-containing polymers

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63170971A (ja) 1987-01-09 1988-07-14 Nec Corp 半導体装置
EP0344292B1 (en) 1987-12-02 1997-04-23 Advanced Micro Devices, Inc. A process of fabricating self-aligned semiconductor devices
JPH02140863A (ja) 1988-11-22 1990-05-30 Nec Corp 分散型エディタにおける端末側エディタのテキスト送信方式
JPH02140863U (cg-RX-API-DMAC10.html) 1989-04-26 1990-11-26
JPH05144744A (ja) 1991-11-18 1993-06-11 Nippon Telegr & Teleph Corp <Ntt> 半導体薄膜形成方法
KR970007965B1 (en) 1994-05-12 1997-05-19 Lg Semicon Co Ltd Structure and fabrication method of tft
KR0132490B1 (ko) 1994-07-21 1998-04-16 문정환 박막트랜지스터 제조방법
JPH08153878A (ja) * 1994-11-29 1996-06-11 Sony Corp 薄膜トランジスタ及びその製造方法
US5641694A (en) 1994-12-22 1997-06-24 International Business Machines Corporation Method of fabricating vertical epitaxial SOI transistor
KR0165398B1 (ko) 1995-05-26 1998-12-15 윤종용 버티칼 트랜지스터의 제조방법
US5780911A (en) * 1995-11-29 1998-07-14 Lg Semicon Co., Ltd. Thin film transistor and method for fabricating the same
GB0024294D0 (en) 2000-10-04 2000-11-15 Univ Cambridge Tech Solid state embossing of polymer devices
DE10234735A1 (de) 2002-07-30 2004-02-12 Infineon Technologies Ag Verfahren zum vertikalen Strukturieren von Substraten in der Halbleiterprozesstechnik mittels inkonformer Abscheidung
US6924517B2 (en) * 2003-08-26 2005-08-02 International Business Machines Corporation Thin channel FET with recessed source/drains and extensions
FR2861501B1 (fr) * 2003-10-22 2006-01-13 Commissariat Energie Atomique Dispositif microelectronique a effet de champ apte a former un ou plusiseurs canaux de transistors
JP3983222B2 (ja) 2004-01-13 2007-09-26 Ｎｅｃエレクトロニクス株式会社 半導体装置及びその製造方法
US7629633B2 (en) 2004-05-20 2009-12-08 Isaac Wing Tak Chan Vertical thin film transistor with short-channel effect suppression
US6972461B1 (en) 2004-06-30 2005-12-06 International Business Machines Corporation Channel MOSFET with strained silicon channel on strained SiGe
JP4568286B2 (ja) 2004-10-04 2010-10-27 パナソニック株式会社 縦型電界効果トランジスタおよびその製造方法
JP2006269599A (ja) * 2005-03-23 2006-10-05 Sony Corp パターン形成方法、有機電界効果型トランジスタの製造方法、及び、フレキシブルプリント回路板の製造方法
TWI278068B (en) 2005-11-03 2007-04-01 Nanya Technology Corp Growth controlled vertical transistor
US7456429B2 (en) 2006-03-29 2008-11-25 Eastman Kodak Company Apparatus for atomic layer deposition
US7413982B2 (en) 2006-03-29 2008-08-19 Eastman Kodak Company Process for atomic layer deposition
JP2007284766A (ja) 2006-04-19 2007-11-01 Shimadzu Corp 縦型プラズマｃｖｄ装置
US7410856B2 (en) 2006-09-14 2008-08-12 Micron Technology, Inc. Methods of forming vertical transistors
JP2008091379A (ja) * 2006-09-29 2008-04-17 Sanyo Electric Co Ltd 電界効果トランジスタ及びその製造方法
JP2008103636A (ja) 2006-10-20 2008-05-01 Sumitomo Electric Ind Ltd 縦型トランジスタ、および縦型トランジスタを作製する方法
JP2008160004A (ja) 2006-12-26 2008-07-10 Toshiba Corp 半導体記憶装置及びその製造方法
US11136667B2 (en) 2007-01-08 2021-10-05 Eastman Kodak Company Deposition system and method using a delivery head separated from a substrate by gas pressure
US7789961B2 (en) 2007-01-08 2010-09-07 Eastman Kodak Company Delivery device comprising gas diffuser for thin film deposition
JP2008277375A (ja) 2007-04-26 2008-11-13 Sanyo Electric Co Ltd 電界効果トランジスタ及びその製造方法
US20090001470A1 (en) 2007-06-26 2009-01-01 Anderson Brent A Method for forming acute-angle spacer for non-orthogonal finfet and the resulting structure
KR100889607B1 (ko) 2007-08-13 2009-03-20 성균관대학교산학협력단 더미 드레인층을 이용한 수직 실린더형 트랜지스터의제조방법 및 이에 의해 제조된 수직 실린더형 트랜지스터
KR100896631B1 (ko) 2007-08-13 2009-05-08 성균관대학교산학협력단 수직 실린더형 트랜지스터의 제조방법 및 이에 의해 제조된수직 실린더형 트랜지스터
JP2009130165A (ja) * 2007-11-26 2009-06-11 Sanyo Electric Co Ltd Ｃｍｏｓ半導体装置
KR100960928B1 (ko) 2008-01-02 2010-06-07 주식회사 하이닉스반도체 수직형 트랜지스터 및 그의 형성방법
JP2010040580A (ja) 2008-07-31 2010-02-18 Sanyo Electric Co Ltd 有機薄膜デバイスの製造方法及び有機薄膜デバイス
US8637355B2 (en) * 2011-08-26 2014-01-28 Eastman Kodak Company Actuating transistor including single layer reentrant profile

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