JP2013520823A5 - - Google Patents

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Publication number
JP2013520823A5
JP2013520823A5 JP2012554335A JP2012554335A JP2013520823A5 JP 2013520823 A5 JP2013520823 A5 JP 2013520823A5 JP 2012554335 A JP2012554335 A JP 2012554335A JP 2012554335 A JP2012554335 A JP 2012554335A JP 2013520823 A5 JP2013520823 A5 JP 2013520823A5
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JP
Japan
Prior art keywords
layer
type cladding
cladding layer
refractive index
waveguide
Prior art date
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Application number
JP2012554335A
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English (en)
Japanese (ja)
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JP2013520823A (ja
JP5795010B2 (ja
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Publication date
Priority claimed from DE102010009457A external-priority patent/DE102010009457A1/de
Application filed filed Critical
Publication of JP2013520823A publication Critical patent/JP2013520823A/ja
Publication of JP2013520823A5 publication Critical patent/JP2013520823A5/ja
Application granted granted Critical
Publication of JP5795010B2 publication Critical patent/JP5795010B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2012554335A 2010-02-26 2011-02-23 オプトエレクトロニクス半導体チップ Expired - Fee Related JP5795010B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102010009457A DE102010009457A1 (de) 2010-02-26 2010-02-26 Optoelektronischer Halbleiterchip
DE102010009457.9 2010-02-26
PCT/EP2011/052681 WO2011104274A2 (de) 2010-02-26 2011-02-23 Optoelektronischer halbleiterchip

Publications (3)

Publication Number Publication Date
JP2013520823A JP2013520823A (ja) 2013-06-06
JP2013520823A5 true JP2013520823A5 (https=) 2014-03-13
JP5795010B2 JP5795010B2 (ja) 2015-10-14

Family

ID=43798293

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012554335A Expired - Fee Related JP5795010B2 (ja) 2010-02-26 2011-02-23 オプトエレクトロニクス半導体チップ

Country Status (7)

Country Link
US (1) US8916849B2 (https=)
EP (1) EP2539980B9 (https=)
JP (1) JP5795010B2 (https=)
KR (1) KR20130036212A (https=)
CN (1) CN102771023B (https=)
DE (1) DE102010009457A1 (https=)
WO (1) WO2011104274A2 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1883141B1 (de) * 2006-07-27 2017-05-24 OSRAM Opto Semiconductors GmbH LD oder LED mit Übergitter-Mantelschicht
US9269876B2 (en) * 2012-03-06 2016-02-23 Soraa, Inc. Light emitting diodes with low refractive index material layers to reduce light guiding effects
FR3004005B1 (fr) * 2013-03-28 2016-11-25 Commissariat Energie Atomique Diode electroluminescente a multiples puits quantiques et jonction p-n asymetrique
KR102038623B1 (ko) * 2013-08-21 2019-10-30 삼성전자주식회사 광변조기 및 이를 포함한 3차원 영상 획득 장치
DE102014111058A1 (de) * 2014-08-04 2016-02-04 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung
CN104319631B (zh) * 2014-09-28 2017-04-26 北京大学东莞光电研究院 一种制备GaN基激光器的方法以及一种GaN基激光器
US9444224B2 (en) * 2014-12-08 2016-09-13 Palo Alto Research Center Incorporated Nitride laser diode with engineered non-uniform alloy composition in the n-cladding layer
DE102016122147B4 (de) 2016-11-17 2022-06-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaser
DE102017122032A1 (de) * 2017-09-22 2019-03-28 Osram Opto Semiconductors Gmbh Laserdiode
WO2019232261A1 (en) * 2018-05-30 2019-12-05 Nlight, Inc. Large optical cavity (loc) laser diode having quantum well offset and efficient single mode laser emission along fast axis
CN110047980B (zh) * 2019-05-05 2020-11-03 深圳市洲明科技股份有限公司 一种紫外led外延结构及其制备方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6690700B2 (en) * 1998-10-16 2004-02-10 Agilent Technologies, Inc. Nitride semiconductor device
JP3454181B2 (ja) 1999-03-23 2003-10-06 松下電器産業株式会社 窒化物半導体素子
JP4433356B2 (ja) * 1999-07-09 2010-03-17 シャープ株式会社 半導体レーザ素子および光学式情報再生装置
JP2002111134A (ja) * 2000-09-29 2002-04-12 Toshiba Corp 半導体レーザ装置
JP4075324B2 (ja) * 2001-05-10 2008-04-16 日亜化学工業株式会社 窒化物半導体素子
US6954478B2 (en) 2002-02-04 2005-10-11 Sanyo Electric Co., Ltd. Nitride-based semiconductor laser device
JP4204982B2 (ja) 2002-04-04 2009-01-07 シャープ株式会社 半導体レーザ素子
US7058105B2 (en) 2002-10-17 2006-06-06 Samsung Electro-Mechanics Co., Ltd. Semiconductor optoelectronic device
KR20070080696A (ko) * 2006-02-08 2007-08-13 삼성전자주식회사 질화물계 반도체 레이저 다이오드
US7804869B2 (en) * 2006-05-22 2010-09-28 Agere Systems Inc. Gallium nitride based semiconductor device with electron blocking layer
JP2008103772A (ja) * 2008-01-17 2008-05-01 Matsushita Electric Ind Co Ltd 半導体レーザ装置

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