CN102771023B - 光电子半导体芯片 - Google Patents

光电子半导体芯片 Download PDF

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Publication number
CN102771023B
CN102771023B CN201180011338.1A CN201180011338A CN102771023B CN 102771023 B CN102771023 B CN 102771023B CN 201180011338 A CN201180011338 A CN 201180011338A CN 102771023 B CN102771023 B CN 102771023B
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CN
China
Prior art keywords
layer
refractive index
cladding
waveguide
semiconductor chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201180011338.1A
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English (en)
Chinese (zh)
Other versions
CN102771023A (zh
Inventor
克里斯托夫·艾克勒
特雷莎·莱尔默
亚德里恩·斯特凡·阿夫拉梅斯库
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
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Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of CN102771023A publication Critical patent/CN102771023A/zh
Application granted granted Critical
Publication of CN102771023B publication Critical patent/CN102771023B/zh
Expired - Fee Related legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H01S5/0653—Mode suppression, e.g. specific multimode
    • H01S5/0655—Single transverse or lateral mode emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2027—Reflecting region or layer, parallel to the active layer, e.g. to modify propagation of the mode in the laser or to influence transverse modes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
CN201180011338.1A 2010-02-26 2011-02-23 光电子半导体芯片 Expired - Fee Related CN102771023B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102010009457A DE102010009457A1 (de) 2010-02-26 2010-02-26 Optoelektronischer Halbleiterchip
DE102010009457.9 2010-02-26
PCT/EP2011/052681 WO2011104274A2 (de) 2010-02-26 2011-02-23 Optoelektronischer halbleiterchip

Publications (2)

Publication Number Publication Date
CN102771023A CN102771023A (zh) 2012-11-07
CN102771023B true CN102771023B (zh) 2014-12-31

Family

ID=43798293

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180011338.1A Expired - Fee Related CN102771023B (zh) 2010-02-26 2011-02-23 光电子半导体芯片

Country Status (7)

Country Link
US (1) US8916849B2 (https=)
EP (1) EP2539980B9 (https=)
JP (1) JP5795010B2 (https=)
KR (1) KR20130036212A (https=)
CN (1) CN102771023B (https=)
DE (1) DE102010009457A1 (https=)
WO (1) WO2011104274A2 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1883141B1 (de) * 2006-07-27 2017-05-24 OSRAM Opto Semiconductors GmbH LD oder LED mit Übergitter-Mantelschicht
US9269876B2 (en) * 2012-03-06 2016-02-23 Soraa, Inc. Light emitting diodes with low refractive index material layers to reduce light guiding effects
FR3004005B1 (fr) * 2013-03-28 2016-11-25 Commissariat Energie Atomique Diode electroluminescente a multiples puits quantiques et jonction p-n asymetrique
KR102038623B1 (ko) * 2013-08-21 2019-10-30 삼성전자주식회사 광변조기 및 이를 포함한 3차원 영상 획득 장치
DE102014111058A1 (de) * 2014-08-04 2016-02-04 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung
CN104319631B (zh) * 2014-09-28 2017-04-26 北京大学东莞光电研究院 一种制备GaN基激光器的方法以及一种GaN基激光器
US9444224B2 (en) * 2014-12-08 2016-09-13 Palo Alto Research Center Incorporated Nitride laser diode with engineered non-uniform alloy composition in the n-cladding layer
DE102016122147B4 (de) 2016-11-17 2022-06-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaser
DE102017122032A1 (de) * 2017-09-22 2019-03-28 Osram Opto Semiconductors Gmbh Laserdiode
WO2019232261A1 (en) * 2018-05-30 2019-12-05 Nlight, Inc. Large optical cavity (loc) laser diode having quantum well offset and efficient single mode laser emission along fast axis
CN110047980B (zh) * 2019-05-05 2020-11-03 深圳市洲明科技股份有限公司 一种紫外led外延结构及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000277862A (ja) * 1999-03-23 2000-10-06 Matsushita Electric Ind Co Ltd 窒化物半導体素子
CN1490910A (zh) * 2002-10-17 2004-04-21 ���ǵ�����ʽ���� 半导体光电子器件
US20070183469A1 (en) * 2006-02-08 2007-08-09 Samsung Electronics Co., Ltd. Nitride based semiconductor laser diode

Family Cites Families (8)

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Publication number Priority date Publication date Assignee Title
US6690700B2 (en) * 1998-10-16 2004-02-10 Agilent Technologies, Inc. Nitride semiconductor device
JP4433356B2 (ja) * 1999-07-09 2010-03-17 シャープ株式会社 半導体レーザ素子および光学式情報再生装置
JP2002111134A (ja) * 2000-09-29 2002-04-12 Toshiba Corp 半導体レーザ装置
JP4075324B2 (ja) * 2001-05-10 2008-04-16 日亜化学工業株式会社 窒化物半導体素子
US6954478B2 (en) 2002-02-04 2005-10-11 Sanyo Electric Co., Ltd. Nitride-based semiconductor laser device
JP4204982B2 (ja) 2002-04-04 2009-01-07 シャープ株式会社 半導体レーザ素子
US7804869B2 (en) * 2006-05-22 2010-09-28 Agere Systems Inc. Gallium nitride based semiconductor device with electron blocking layer
JP2008103772A (ja) * 2008-01-17 2008-05-01 Matsushita Electric Ind Co Ltd 半導体レーザ装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000277862A (ja) * 1999-03-23 2000-10-06 Matsushita Electric Ind Co Ltd 窒化物半導体素子
CN1490910A (zh) * 2002-10-17 2004-04-21 ���ǵ�����ʽ���� 半导体光电子器件
US20070183469A1 (en) * 2006-02-08 2007-08-09 Samsung Electronics Co., Ltd. Nitride based semiconductor laser diode

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特开2000-277862A 2000.10.06 *

Also Published As

Publication number Publication date
US8916849B2 (en) 2014-12-23
DE102010009457A1 (de) 2011-09-01
WO2011104274A2 (de) 2011-09-01
WO2011104274A3 (de) 2011-12-01
KR20130036212A (ko) 2013-04-11
EP2539980B1 (de) 2018-04-11
EP2539980A2 (de) 2013-01-02
CN102771023A (zh) 2012-11-07
JP2013520823A (ja) 2013-06-06
EP2539980B9 (de) 2018-09-12
US20130039376A1 (en) 2013-02-14
JP5795010B2 (ja) 2015-10-14

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