DE102010009457A1 - Optoelektronischer Halbleiterchip - Google Patents

Optoelektronischer Halbleiterchip Download PDF

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Publication number
DE102010009457A1
DE102010009457A1 DE102010009457A DE102010009457A DE102010009457A1 DE 102010009457 A1 DE102010009457 A1 DE 102010009457A1 DE 102010009457 A DE102010009457 A DE 102010009457A DE 102010009457 A DE102010009457 A DE 102010009457A DE 102010009457 A1 DE102010009457 A1 DE 102010009457A1
Authority
DE
Germany
Prior art keywords
layer
semiconductor chip
waveguide
carrier
cladding layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102010009457A
Other languages
German (de)
English (en)
Inventor
Dr. Eichler Christoph
Teresa Lermer
Dr. Avramescu Adrian Stefan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to DE102010009457A priority Critical patent/DE102010009457A1/de
Priority to CN201180011338.1A priority patent/CN102771023B/zh
Priority to KR1020127025304A priority patent/KR20130036212A/ko
Priority to US13/579,259 priority patent/US8916849B2/en
Priority to EP11704791.0A priority patent/EP2539980B9/de
Priority to PCT/EP2011/052681 priority patent/WO2011104274A2/de
Priority to JP2012554335A priority patent/JP5795010B2/ja
Publication of DE102010009457A1 publication Critical patent/DE102010009457A1/de
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H01S5/0653—Mode suppression, e.g. specific multimode
    • H01S5/0655—Single transverse or lateral mode emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2027—Reflecting region or layer, parallel to the active layer, e.g. to modify propagation of the mode in the laser or to influence transverse modes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
DE102010009457A 2010-02-26 2010-02-26 Optoelektronischer Halbleiterchip Withdrawn DE102010009457A1 (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
DE102010009457A DE102010009457A1 (de) 2010-02-26 2010-02-26 Optoelektronischer Halbleiterchip
CN201180011338.1A CN102771023B (zh) 2010-02-26 2011-02-23 光电子半导体芯片
KR1020127025304A KR20130036212A (ko) 2010-02-26 2011-02-23 광전자 반도체 칩
US13/579,259 US8916849B2 (en) 2010-02-26 2011-02-23 Optoelectronic semiconductor chip
EP11704791.0A EP2539980B9 (de) 2010-02-26 2011-02-23 Optoelektronischer halbleiterchip
PCT/EP2011/052681 WO2011104274A2 (de) 2010-02-26 2011-02-23 Optoelektronischer halbleiterchip
JP2012554335A JP5795010B2 (ja) 2010-02-26 2011-02-23 オプトエレクトロニクス半導体チップ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102010009457A DE102010009457A1 (de) 2010-02-26 2010-02-26 Optoelektronischer Halbleiterchip

Publications (1)

Publication Number Publication Date
DE102010009457A1 true DE102010009457A1 (de) 2011-09-01

Family

ID=43798293

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102010009457A Withdrawn DE102010009457A1 (de) 2010-02-26 2010-02-26 Optoelektronischer Halbleiterchip

Country Status (7)

Country Link
US (1) US8916849B2 (https=)
EP (1) EP2539980B9 (https=)
JP (1) JP5795010B2 (https=)
KR (1) KR20130036212A (https=)
CN (1) CN102771023B (https=)
DE (1) DE102010009457A1 (https=)
WO (1) WO2011104274A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10826276B2 (en) 2016-11-17 2020-11-03 Osram Oled Gmbh Semiconductor laser

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1883141B1 (de) * 2006-07-27 2017-05-24 OSRAM Opto Semiconductors GmbH LD oder LED mit Übergitter-Mantelschicht
US9269876B2 (en) * 2012-03-06 2016-02-23 Soraa, Inc. Light emitting diodes with low refractive index material layers to reduce light guiding effects
FR3004005B1 (fr) * 2013-03-28 2016-11-25 Commissariat Energie Atomique Diode electroluminescente a multiples puits quantiques et jonction p-n asymetrique
KR102038623B1 (ko) * 2013-08-21 2019-10-30 삼성전자주식회사 광변조기 및 이를 포함한 3차원 영상 획득 장치
DE102014111058A1 (de) * 2014-08-04 2016-02-04 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung
CN104319631B (zh) * 2014-09-28 2017-04-26 北京大学东莞光电研究院 一种制备GaN基激光器的方法以及一种GaN基激光器
US9444224B2 (en) * 2014-12-08 2016-09-13 Palo Alto Research Center Incorporated Nitride laser diode with engineered non-uniform alloy composition in the n-cladding layer
DE102017122032A1 (de) * 2017-09-22 2019-03-28 Osram Opto Semiconductors Gmbh Laserdiode
WO2019232261A1 (en) * 2018-05-30 2019-12-05 Nlight, Inc. Large optical cavity (loc) laser diode having quantum well offset and efficient single mode laser emission along fast axis
CN110047980B (zh) * 2019-05-05 2020-11-03 深圳市洲明科技股份有限公司 一种紫外led外延结构及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020039374A1 (en) * 2000-09-29 2002-04-04 Kabushiki Kaisha Toshiba Semiconductor laser diode
US6493367B1 (en) * 1999-07-09 2002-12-10 Sharp Kabushiki Kaisha Semiconductor laser device and optical information reproduction apparatus

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6690700B2 (en) * 1998-10-16 2004-02-10 Agilent Technologies, Inc. Nitride semiconductor device
JP3454181B2 (ja) 1999-03-23 2003-10-06 松下電器産業株式会社 窒化物半導体素子
JP4075324B2 (ja) * 2001-05-10 2008-04-16 日亜化学工業株式会社 窒化物半導体素子
US6954478B2 (en) 2002-02-04 2005-10-11 Sanyo Electric Co., Ltd. Nitride-based semiconductor laser device
JP4204982B2 (ja) 2002-04-04 2009-01-07 シャープ株式会社 半導体レーザ素子
US7058105B2 (en) 2002-10-17 2006-06-06 Samsung Electro-Mechanics Co., Ltd. Semiconductor optoelectronic device
KR20070080696A (ko) * 2006-02-08 2007-08-13 삼성전자주식회사 질화물계 반도체 레이저 다이오드
US7804869B2 (en) * 2006-05-22 2010-09-28 Agere Systems Inc. Gallium nitride based semiconductor device with electron blocking layer
JP2008103772A (ja) * 2008-01-17 2008-05-01 Matsushita Electric Ind Co Ltd 半導体レーザ装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6493367B1 (en) * 1999-07-09 2002-12-10 Sharp Kabushiki Kaisha Semiconductor laser device and optical information reproduction apparatus
US20020039374A1 (en) * 2000-09-29 2002-04-04 Kabushiki Kaisha Toshiba Semiconductor laser diode

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10826276B2 (en) 2016-11-17 2020-11-03 Osram Oled Gmbh Semiconductor laser
DE102016122147B4 (de) 2016-11-17 2022-06-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaser

Also Published As

Publication number Publication date
US8916849B2 (en) 2014-12-23
WO2011104274A2 (de) 2011-09-01
WO2011104274A3 (de) 2011-12-01
KR20130036212A (ko) 2013-04-11
EP2539980B1 (de) 2018-04-11
EP2539980A2 (de) 2013-01-02
CN102771023A (zh) 2012-11-07
JP2013520823A (ja) 2013-06-06
EP2539980B9 (de) 2018-09-12
US20130039376A1 (en) 2013-02-14
JP5795010B2 (ja) 2015-10-14
CN102771023B (zh) 2014-12-31

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