JP2013520001A - 太陽電池を金属基材上に製造する積層システム、および該積層システムを製造する方法 - Google Patents
太陽電池を金属基材上に製造する積層システム、および該積層システムを製造する方法 Download PDFInfo
- Publication number
- JP2013520001A JP2013520001A JP2012552403A JP2012552403A JP2013520001A JP 2013520001 A JP2013520001 A JP 2013520001A JP 2012552403 A JP2012552403 A JP 2012552403A JP 2012552403 A JP2012552403 A JP 2012552403A JP 2013520001 A JP2013520001 A JP 2013520001A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- polymer coating
- coating layer
- polymer
- embossed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 50
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 36
- 239000002184 metal Substances 0.000 title claims abstract description 36
- 238000003475 lamination Methods 0.000 title claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000010410 layer Substances 0.000 claims description 130
- 229920000642 polymer Polymers 0.000 claims description 103
- 239000011247 coating layer Substances 0.000 claims description 53
- 238000004049 embossing Methods 0.000 claims description 37
- 238000000576 coating method Methods 0.000 claims description 21
- 239000011248 coating agent Substances 0.000 claims description 20
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 19
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 17
- 229910052782 aluminium Inorganic materials 0.000 claims description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 14
- -1 polyethylene terephthalate Polymers 0.000 claims description 13
- 229910000831 Steel Inorganic materials 0.000 claims description 11
- 239000010959 steel Substances 0.000 claims description 11
- 239000012790 adhesive layer Substances 0.000 claims description 10
- 230000000694 effects Effects 0.000 claims description 10
- 229910001209 Low-carbon steel Inorganic materials 0.000 claims description 9
- 239000010409 thin film Substances 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 238000000149 argon plasma sintering Methods 0.000 claims description 7
- 230000000903 blocking effect Effects 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 230000005611 electricity Effects 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 238000001579 optical reflectometry Methods 0.000 claims description 6
- 239000010935 stainless steel Substances 0.000 claims description 6
- 229910001220 stainless steel Inorganic materials 0.000 claims description 6
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 5
- 229910000423 chromium oxide Inorganic materials 0.000 claims description 5
- 238000010030 laminating Methods 0.000 claims description 5
- 230000000737 periodic effect Effects 0.000 claims description 5
- 229920000728 polyester Polymers 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- 239000002052 molecular layer Substances 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 229910000838 Al alloy Inorganic materials 0.000 claims description 3
- 239000004698 Polyethylene Substances 0.000 claims description 3
- 229920001577 copolymer Polymers 0.000 claims description 3
- 229920001707 polybutylene terephthalate Polymers 0.000 claims description 3
- 150000003384 small molecules Chemical class 0.000 claims description 3
- 229920001169 thermoplastic Polymers 0.000 claims description 3
- 239000004962 Polyamide-imide Substances 0.000 claims description 2
- 239000004642 Polyimide Substances 0.000 claims description 2
- 239000004743 Polypropylene Substances 0.000 claims description 2
- 239000011127 biaxially oriented polypropylene Substances 0.000 claims description 2
- 229920002312 polyamide-imide Polymers 0.000 claims description 2
- 229920000573 polyethylene Polymers 0.000 claims description 2
- 239000011112 polyethylene naphthalate Substances 0.000 claims description 2
- 229920001721 polyimide Polymers 0.000 claims description 2
- 229920000098 polyolefin Polymers 0.000 claims description 2
- 229920001155 polypropylene Polymers 0.000 claims description 2
- 239000004800 polyvinyl chloride Substances 0.000 claims description 2
- 229920006378 biaxially oriented polypropylene Polymers 0.000 claims 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 claims 1
- 229920000915 polyvinyl chloride Polymers 0.000 claims 1
- 238000002425 crystallisation Methods 0.000 description 7
- 230000008025 crystallization Effects 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 239000008199 coating composition Substances 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- YIMQCDZDWXUDCA-UHFFFAOYSA-N [4-(hydroxymethyl)cyclohexyl]methanol Chemical group OCC1CCC(CO)CC1 YIMQCDZDWXUDCA-UHFFFAOYSA-N 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001125 extrusion Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 230000027756 respiratory electron transport chain Effects 0.000 description 2
- 230000009974 thixotropic effect Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910001335 Galvanized steel Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000007765 extrusion coating Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000008397 galvanized steel Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- CSJDCSCTVDEHRN-UHFFFAOYSA-N methane;molecular oxygen Chemical compound C.O=O CSJDCSCTVDEHRN-UHFFFAOYSA-N 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920005597 polymer membrane Polymers 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000005029 tin-free steel Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/87—Light-trapping means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/821—Patterning of a layer by embossing, e.g. stamping to form trenches in an insulating layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
Description
本発明の目的は、安価な太陽電池の連続製造用積層システムを提供することにある。本発明のさらなる目的は、そのような積層システムを製造する方法を提供することにある。
本発明の第一の側面において、
− 光散乱のためのエンボス加工されたポリマーコーティング層を備えた金属基材と、
− 前記エンボス加工されたポリマーコーティング層の形状に追随し、かつ、高い光反射性を有する太陽電池裏面電極と、
− 光を電気に効率的に変換することができる、1つ以上の光起電活性層と、
− 透明なトップ電極と
を備える太陽電池を製造する積層システムであって、
− 前記ポリマーコーティング層が結晶化可能ポリマーを含んでなる、積層システム
が提供される。
− ポリマーコーティング層を備える金属基材を用意する工程と、
− 前記ポリマーコーティング層をエンボス加工し、光散乱のための表面テクスチャを得る工程と、
− 前記エンボス加工されたポリマーコーティング層上に接着層を設ける工程、および/または、所望により、前記ポリマーコーティング層を前処理して接着を向上させる工程と、
− 前記エンボス加工されたポリマーコーティング層または前記接着層の形状に追随し、かつ、高い光反射性を有する太陽電池裏面電極を設け、前記電極が熱エンボス加工されたポリマーコーティング層に追随する工程と、
− 光を電気に効率的に変換することができる、1種以上の光電活性層と、
− 透明トップ電極と
を含む方法が提供される。
− エンボス加工されたポリマーコーティング層が、酸化クロム層またはアルミニウム層のような接着層を備える工程、
− 裏面電極が金属層であり、好ましくは0.1〜0.6μmの厚さを有し、好ましくは金属層が銀またはアルミニウム層である工程、
− 追加の散乱層が裏面電極上に設けられ、裏面電極と光起電活性層の屈折率の間の屈折率を有し、散乱層が好ましくはZnO:Al、SnO2:Fまたはインジウムスズ酸化物(ITO)のような透明導電性酸化物であり、散乱層が所望により酸化珪素ナノ層を備える工程、
− n−i−p−セルにおけるように、光起電活性シリコンの薄膜、または光起電活性の有機小分子を基礎とする薄膜、または正孔伝導および励起子遮断層と組み合わされたポリマーもしくはハイブリッド系のドナー−アクセプター層システムを備える光起電活性層を供給する工程、
− ポリエチレンテレフタレート(PET)のような結晶化可能ポリマーを含んでなるポリマーコーティング層を供給する工程、
− 鋼帯、好ましくは防食コーティングを備える軟鋼、またはステンレス鋼帯またはアルミニウム帯またはアルミニウム合金帯、として金属基材を提供する工程
の1つ以上の工程を含んでなり、
− 熱エンボス加工されたポリマーコーティング層がホログラフィー効果を与える
方法が提供される。
Claims (15)
- − 光散乱のためのエンボス加工されたポリマーコーティング層を備えた金属基材と、
− 前記エンボス加工されたポリマーコーティング層の形状に追随し、かつ、高い光反射性を有する太陽電池裏面電極と、
− 光を電気に効率的に変換することができる、1つ以上の光起電活性層と、
− 透明なトップ電極と
を備える太陽電池を製造する積層システムであって、
− 前記ポリマーコーティング層が結晶化可能ポリマーを含んでなる、積層システム。 - 前記ポリマーコーティング層が、ポリエチレンテレフタレート、ポリブチレンテレフタレート、ポリエチレンナフタレートまたはそれらの共重合体もしくは混合物、のようなポリエステル、ポリプロピレン、2軸配向されたポリプロピレンもしくはポリエチレン、またはポリ塩化ビニルのようなポリオレフィン、ポリアミドまたはポリイミドからなる結晶化可能ポリマーの群から選択される少なくとも1種の結晶化可能ポリマーを含んでなる、請求項1〜5のいずれか一項に記載の積層システム。
- 前記エンボス加工されたポリマーコーティング層が、酸化クロム層またはアルミニウム層のような接着層を備える、請求項1または2に記載の積層システム。
- 前記裏面電極が金属層であり、好ましくは0.1〜0.6μmの厚さを有し、好ましくは前記金属層が銀またはアルミニウム層である、請求項1〜3のいずれか一項に記載の積層システム。
- 前記光起電活性層が、光起電活性シリコンの薄膜、光起電活性の有機小分子に基づく薄膜、または正孔伝導および励起子遮断層と組み合わされたポリマーもしくはハイブリッド系のドナー−アクセプター層システムを備える、請求項1〜4のいずれか一項に記載の積層システム。
- 追加の散乱層が前記裏面電極上に設けられ、前記裏面電極と前記光起電活性層の屈折率の間の屈折率を有し、前記散乱層が好ましくはZnO:Al、SnO2:Fまたはインジウムスズ酸化物(ITO)のような透明導電性酸化物であり、前記散乱層が所望により酸化珪素ナノ層または正孔伝導もしくは励起子遮断層を備える、請求項1〜5のいずれか一項に記載の積層システム。
- 前記金属基材が鋼帯であり、好ましくは防食コーティングを備える軟鋼、またはステンレス鋼帯、アルミニウム帯もしくはアルミニウム合金帯である、請求項1〜6のいずれか一項に記載の積層システム。
- 前記エンボス加工されたポリマーコーティング層がホログラフィー効果を与える、請求項1〜7のいずれか一項に記載の積層システム。
- 前記金属基材が、防食コーティングを備える軟鋼であり、前記結晶化可能ポリマーがポリエチレンテレフタレートから本質的になる、請求項1〜8のいずれか一項に記載の積層システム。
- 太陽電池で用いる積層システムを製造する方法であって、
− ポリマーコーティング層を備える金属基材を用意する工程と、
− 前記ポリマーコーティング層をエンボス加工し、光散乱のための表面テクスチャを得る工程と、
− 前記エンボス加工されたポリマーコーティング層上に接着層を設け、および/または、所望により、前記ポリマーコーティング層を前処理して接着を向上させる工程と、
− 前記エンボス加工されたポリマーコーティング層または前記接着層の形状に追随し、かつ、高い光反射性を有する太陽電池裏面電極を設け、前記電極が熱エンボス加工されたポリマーコーティング層に追随する工程と、
− 光を電気に効率的に変換することができる、1種以上の光電活性層と、
− 透明トップ電極と
を含む方法。 - 前記ポリマーコーティング層のエンボス加工が、ホログラムまたは周期的格子のような表面テクスチャを熱エンボス加工することによってもたらされ、それにより前記ポリマーコーティング層を少なくとも部分的に結晶化し、好ましくは前記熱エンボス加工が120〜200℃のエンボス加工温度で適用される、請求項10に記載の方法。
- 前記基材に少なくとも部分的に結晶化されたポリマーコーティング層を設け、次いで、前記コーティングされた基材を第二のコーティングでコーティングし、該第二のコーティングが次いで多くとも部分的に硬化され、エンボス加工されて光散乱のための表面テクスチャを得、その後硬化を完了する、請求項10に記載の方法。
- − 前記エンボス加工されたポリマーコーティング層が、酸化クロム層またはアルミニウム層のような接着層を備え、および/または
− 前記裏面電極が金属層であり、好ましくは0.1〜0.6μmの厚さを有し、好ましくは前記金属層が銀またはアルミニウム層であり、および/または
− 追加の散乱層が前記裏面電極上に設けられ、前記裏面電極と前記光起電活性層の屈折率の間の屈折率を有し、前記散乱層が好ましくはZnO:Al、SnO2:Fまたはインジウムスズ酸化物(ITO)のような透明導電性酸化物であり、前記散乱層が所望により酸化珪素ナノ層を備え、および/または
− 前記光起電活性層が、光起電活性シリコンの薄膜、光起電活性の有機小分子に基づく薄膜、または正孔伝導および励起子遮断層と組み合わされたポリマーもしくはハイブリッド系のドナー−アクセプター層システムを備え、および/または
− 前記ポリマーコーティング層が、ポリエチレンテレフタレート(PET)のような結晶化可能ポリマーを含んでなり、および/または
− 前記金属基材が鋼帯であり、好ましくは防食コーティングを備える軟鋼、またはステンレス鋼帯、アルミニウム帯もしくはアルミニウム合金帯であり、および/または
− 前記熱エンボス加工されたポリマーコーティング層がホログラフィー効果を与える、
請求項10〜12のいずれか一項に記載の方法。 - 前記ポリマーコーティング層が、ポリエチレンテレフタレート(PET)のような、結晶化可能熱可塑性ポリマーを含んでなる、請求項10〜12のいずれか一項に記載の方法。
- 前記エンボス加工が、企業ロゴ、商品名および/または商標を含むホログラフィー像のような、偽造防止、ブランド振興および/または製品認証用のホログラフィー像をもたらす、請求項10〜13のいずれか一項に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP10001343 | 2010-02-10 | ||
EP10001343.2 | 2010-02-10 | ||
PCT/EP2011/052002 WO2011098544A1 (en) | 2010-02-10 | 2011-02-10 | Layered system for producing a solar cell on a metal substrate, method for producing said layered system |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2013520001A true JP2013520001A (ja) | 2013-05-30 |
Family
ID=42357742
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012552403A Pending JP2013520001A (ja) | 2010-02-10 | 2011-02-10 | 太陽電池を金属基材上に製造する積層システム、および該積層システムを製造する方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US8945972B2 (ja) |
EP (1) | EP2534702A1 (ja) |
JP (1) | JP2013520001A (ja) |
KR (1) | KR20120130204A (ja) |
CN (1) | CN102812563B (ja) |
AU (1) | AU2011214291B2 (ja) |
CA (1) | CA2789573C (ja) |
WO (1) | WO2011098544A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015195315A (ja) * | 2014-03-31 | 2015-11-05 | 株式会社神戸製鋼所 | 金属基板 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8654524B2 (en) | 2009-08-17 | 2014-02-18 | Apple Inc. | Housing as an I/O device |
EP2789027B1 (en) * | 2011-12-06 | 2019-08-14 | Novaled GmbH | Organic photovoltaic device |
KR101467991B1 (ko) * | 2012-11-12 | 2014-12-03 | 재단법인대구경북과학기술원 | 광수확능력이 향상된 전고상 광 감응 태양전지 및 이의 제조방법 |
KR102108275B1 (ko) * | 2016-03-03 | 2020-05-07 | (주)엘지하우시스 | 발광형 집광 필름 |
KR102498522B1 (ko) * | 2018-03-15 | 2023-02-10 | 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 | 화합물 반도체 태양전지 및 이의 제조 방법 |
DE102019110191A1 (de) | 2019-04-17 | 2020-10-22 | Infineon Technologies Ag | Package aufweisend einen Identifizierer auf und/oder in einem Träger |
CN112952006B (zh) * | 2019-12-11 | 2024-03-12 | 中国科学院大连化学物理研究所 | 一种钙钛矿太阳能电池钙钛矿吸光层表面制绒方法 |
Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62224981A (ja) * | 1986-03-27 | 1987-10-02 | Sumitomo Electric Ind Ltd | 非晶質半導体素子 |
JPS62252976A (ja) * | 1986-04-25 | 1987-11-04 | Mitsubishi Electric Corp | 光発電素子基板の表面加工法 |
JPH05505911A (ja) * | 1991-02-04 | 1993-08-26 | パウル・シエーレル・インステイトウト | 太陽電池 |
JPH06106643A (ja) * | 1992-05-20 | 1994-04-19 | Sidel Sa | Pet製容器をその製造時に熱処理するための装置 |
JPH06240441A (ja) * | 1992-07-21 | 1994-08-30 | Basf Ag | ポリマー/金属複合体またはポリマー/半導体複合体の製造方法 |
JPH09241863A (ja) * | 1996-03-05 | 1997-09-16 | Tokyo Metropolis | レーザ溶射法による高耐食性改質層の作製方法 |
JP2003298088A (ja) * | 2002-04-02 | 2003-10-17 | Kanegafuchi Chem Ind Co Ltd | シリコン系薄膜光電変換装置 |
JP2003532801A (ja) * | 1998-03-24 | 2003-11-05 | ミネソタ マイニング アンド マニュファクチャリング カンパニー | 寸法安定性のある不織繊維状ウェブの作成方法および装置 |
JP2004034489A (ja) * | 2002-07-03 | 2004-02-05 | Toppan Printing Co Ltd | 化粧シート |
WO2004098883A1 (ja) * | 2003-05-09 | 2004-11-18 | Mitsubishi Plastics, Inc. | エンボス意匠シート及びエンボス意匠シート被覆金属板 |
WO2008074879A2 (en) * | 2006-12-21 | 2008-06-26 | Helianthos B.V. | Method for making solar sub-cells from a solar cell |
JP2009078561A (ja) * | 2001-11-28 | 2009-04-16 | Mitsubishi Plastics Inc | 積層樹脂シート、エンボス付与シート及び被覆基材 |
JP2009170943A (ja) * | 2004-04-28 | 2009-07-30 | Nakajima Glass Co Inc | 太陽電池モジュールの製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5101260A (en) * | 1989-05-01 | 1992-03-31 | Energy Conversion Devices, Inc. | Multilayer light scattering photovoltaic back reflector and method of making same |
US6248948B1 (en) * | 1998-05-15 | 2001-06-19 | Canon Kabushiki Kaisha | Solar cell module and method of producing the same |
JP2003298076A (ja) * | 2002-03-29 | 2003-10-17 | Tdk Corp | 太陽電池およびその製造方法 |
-
2011
- 2011-02-10 JP JP2012552403A patent/JP2013520001A/ja active Pending
- 2011-02-10 US US13/577,410 patent/US8945972B2/en not_active Expired - Fee Related
- 2011-02-10 KR KR1020127023531A patent/KR20120130204A/ko not_active Application Discontinuation
- 2011-02-10 AU AU2011214291A patent/AU2011214291B2/en not_active Ceased
- 2011-02-10 WO PCT/EP2011/052002 patent/WO2011098544A1/en active Application Filing
- 2011-02-10 EP EP11702841A patent/EP2534702A1/en not_active Withdrawn
- 2011-02-10 CN CN201180009261.4A patent/CN102812563B/zh not_active Expired - Fee Related
- 2011-02-10 CA CA2789573A patent/CA2789573C/en not_active Expired - Fee Related
Patent Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62224981A (ja) * | 1986-03-27 | 1987-10-02 | Sumitomo Electric Ind Ltd | 非晶質半導体素子 |
JPS62252976A (ja) * | 1986-04-25 | 1987-11-04 | Mitsubishi Electric Corp | 光発電素子基板の表面加工法 |
JPH05505911A (ja) * | 1991-02-04 | 1993-08-26 | パウル・シエーレル・インステイトウト | 太陽電池 |
JPH06106643A (ja) * | 1992-05-20 | 1994-04-19 | Sidel Sa | Pet製容器をその製造時に熱処理するための装置 |
JPH06240441A (ja) * | 1992-07-21 | 1994-08-30 | Basf Ag | ポリマー/金属複合体またはポリマー/半導体複合体の製造方法 |
JPH09241863A (ja) * | 1996-03-05 | 1997-09-16 | Tokyo Metropolis | レーザ溶射法による高耐食性改質層の作製方法 |
JP2003532801A (ja) * | 1998-03-24 | 2003-11-05 | ミネソタ マイニング アンド マニュファクチャリング カンパニー | 寸法安定性のある不織繊維状ウェブの作成方法および装置 |
JP2009078561A (ja) * | 2001-11-28 | 2009-04-16 | Mitsubishi Plastics Inc | 積層樹脂シート、エンボス付与シート及び被覆基材 |
JP2003298088A (ja) * | 2002-04-02 | 2003-10-17 | Kanegafuchi Chem Ind Co Ltd | シリコン系薄膜光電変換装置 |
JP2004034489A (ja) * | 2002-07-03 | 2004-02-05 | Toppan Printing Co Ltd | 化粧シート |
WO2004098883A1 (ja) * | 2003-05-09 | 2004-11-18 | Mitsubishi Plastics, Inc. | エンボス意匠シート及びエンボス意匠シート被覆金属板 |
JP2009170943A (ja) * | 2004-04-28 | 2009-07-30 | Nakajima Glass Co Inc | 太陽電池モジュールの製造方法 |
WO2008074879A2 (en) * | 2006-12-21 | 2008-06-26 | Helianthos B.V. | Method for making solar sub-cells from a solar cell |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015195315A (ja) * | 2014-03-31 | 2015-11-05 | 株式会社神戸製鋼所 | 金属基板 |
Also Published As
Publication number | Publication date |
---|---|
AU2011214291B2 (en) | 2014-02-27 |
AU2011214291A1 (en) | 2012-09-06 |
CA2789573A1 (en) | 2011-08-18 |
CN102812563B (zh) | 2015-12-09 |
EP2534702A1 (en) | 2012-12-19 |
US8945972B2 (en) | 2015-02-03 |
WO2011098544A1 (en) | 2011-08-18 |
KR20120130204A (ko) | 2012-11-29 |
CA2789573C (en) | 2017-02-07 |
US20120298198A1 (en) | 2012-11-29 |
CN102812563A (zh) | 2012-12-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2013520001A (ja) | 太陽電池を金属基材上に製造する積層システム、および該積層システムを製造する方法 | |
NL1013900C2 (nl) | Werkwijze voor de vervaardiging van een zonnecelfolie met in serie geschakelde zonnecellen. | |
JP5365140B2 (ja) | 太陽電池バックシート | |
EP2486600A2 (en) | Method for manufacturing multilayer films and solar panel backsheets formed thereof | |
US20140326306A1 (en) | Highly efficient solar cell module | |
WO2012056941A1 (ja) | 太陽電池モジュールおよびその製造方法 | |
CN216915146U (zh) | 一种光伏背板 | |
EP2693101A1 (en) | Solar lighting system | |
JP2010287682A (ja) | 太陽電池モジュール用裏面保護シート | |
TW201208097A (en) | Solar cell module and production method for solar cell module | |
JPH06318728A (ja) | 太陽電池モジュール | |
CN101752453A (zh) | 玻璃衬底双面铜铟镓硒薄膜太阳电池组件的制备方法 | |
WO2005074068A1 (ja) | 色素増感型太陽電池用積層フィルム ならびに色素増感型太陽電池用電極およびその製造方法 | |
CN105074939A (zh) | 用于光伏应用的多层层合物 | |
WO2010096700A2 (en) | Photovoltaic module configuration | |
JP2008537643A (ja) | たとえばtcoの無機コーティングを有する箔片の製造方法 | |
JP2006073793A (ja) | 太陽電池用バックシート及びその製造方法及び太陽電池 | |
CN110757916A (zh) | 一种高耐候、高水汽阻隔型太阳能电池背膜及其制备方法 | |
JP2012204458A (ja) | 太陽電池モジュールの製造方法 | |
TW201133890A (en) | Solar cell module and production method for solar cell module | |
JP2011086715A (ja) | 有機太陽電池用電極 | |
KR20120088972A (ko) | 다층 시트 및 이를 포함하는 광전지 모듈 | |
JP2015056579A (ja) | 太陽電池保護シート及び該保護シートを用いた太陽電池モジュール | |
KR101189288B1 (ko) | 태양전지 및 태양전지 제조방법 | |
CN111183027B (zh) | 包含铝和金属层的导电背板 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140207 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140613 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140618 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140916 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150123 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150416 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20150609 |