JP2013519201A - セラミック線材形成方法、セラミック線材形成システム、及びこれを利用する超伝導線材 - Google Patents
セラミック線材形成方法、セラミック線材形成システム、及びこれを利用する超伝導線材 Download PDFInfo
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- 239000000919 ceramic Substances 0.000 title claims abstract description 69
- 238000000034 method Methods 0.000 title claims abstract description 63
- 239000000758 substrate Substances 0.000 claims abstract description 77
- 238000010438 heat treatment Methods 0.000 claims abstract description 50
- 239000012700 ceramic precursor Substances 0.000 claims abstract description 47
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 39
- 239000001301 oxygen Substances 0.000 claims abstract description 39
- 239000007788 liquid Substances 0.000 claims abstract description 23
- 239000010409 thin film Substances 0.000 claims abstract description 11
- 239000010408 film Substances 0.000 claims description 65
- 239000010949 copper Substances 0.000 claims description 24
- 238000000427 thin-film deposition Methods 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052788 barium Inorganic materials 0.000 claims description 12
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 10
- 150000002910 rare earth metals Chemical class 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 5
- 238000007740 vapor deposition Methods 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 241000954177 Bangana ariza Species 0.000 claims description 3
- 230000007423 decrease Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 description 10
- 238000010587 phase diagram Methods 0.000 description 9
- 239000002243 precursor Substances 0.000 description 8
- 239000012071 phase Substances 0.000 description 7
- 238000011084 recovery Methods 0.000 description 7
- 239000002887 superconductor Substances 0.000 description 6
- 229910010293 ceramic material Inorganic materials 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 238000000354 decomposition reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052746 lanthanum Inorganic materials 0.000 description 4
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical group [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 4
- 230000000704 physical effect Effects 0.000 description 4
- 229910052692 Dysprosium Inorganic materials 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 2
- 229910052693 Europium Inorganic materials 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- 229910052689 Holmium Inorganic materials 0.000 description 2
- 229910052765 Lutetium Inorganic materials 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 229910052772 Samarium Inorganic materials 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 2
- 229910052775 Thulium Inorganic materials 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- 238000010549 co-Evaporation Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical group [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910052685 Curium Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- BTGZYWWSOPEHMM-UHFFFAOYSA-N [O].[Cu].[Y].[Ba] Chemical compound [O].[Cu].[Y].[Ba] BTGZYWWSOPEHMM-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000005339 levitation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
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- H10N60/0548—Processes for depositing or forming copper oxide superconductor layers by deposition and subsequent treatment, e.g. oxidation of pre-deposited material
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Abstract
【解決手段】線材基板の上にセラミック前駆体を提供し、前記セラミック前駆体が提供された線材基板を熱処理して結晶化されたセラミック線材が得られる。前記熱処理工程は、前記セラミック前駆体が液体状態を有するようにプロセッシングチャンバーの温度及び/又は酸素分圧を調節し、前記液体状態のセラミック薄膜から前記線材基板の上にエピタキシセラミック薄膜を形成することを含む。
【選択図】図1
Description
Claims (21)
- 線材基板の上にセラミック前駆体膜を蒸着することと、
前記セラミック前駆体膜が蒸着された線材基板を熱処理することと、を含み、
前記線材基板を熱処理することは、前記セラミック前駆体膜が液体状態を有するように前記線材基板が提供されたプロセッシングチャンバーの温度及び/又は酸素分圧を調節することと、前記液体状態のセラミック前駆体膜から前記線材基板の上にエピタキシセラミック薄膜を形成することと、を含むセラミック線材形成方法。 - 前記セラミック前駆体膜が液体状態を有するようにすることは、前記セラミック前駆体膜が蒸着された線材基板の温度を増加させることを含み、前記エピタキシセラミック薄膜を形成することは前記線材基板の温度を減少させることを含む請求項1に記載のセラミック線材形成方法。
- 前記セラミック前駆体膜が液体状態を有するようにすること又は前記エピタキシセラミック薄膜を形成することは、前記プロセッシングチャンバーの酸素分圧を増加させることを含む請求項2に記載のセラミック線材形成方法。
- 前記セラミック前駆体膜を蒸着することと前記線材基板を熱処理することとは互いに離隔されて分離された空間で遂行される請求項1に記載のセラミック線材形成方法。
- 前記プロセッシングチャンバーは順に隣接する第1容器、第2容器、及び第3容器を含み、
前記セラミック前駆体膜が蒸着された線材基板を熱処理することは、
前記線材基板を連続的に通過させ、前記第1容器、前記第2容器、及び前記第3容器内で順次的に遂行される請求項1に記載のセラミック線材形成方法。 - 前記第1容器内の酸素分圧は前記第3容器内の酸素分圧より低くて、前記第2容器内の酸素分圧は前記第1容器内と前記第3容器内との酸素分圧の間に維持されるようにする請求項5に記載のセラミック線材形成方法。
- 前記第1容器に隣接する部分から前記第3容器に隣接する部分に行くほど、前記第2容器内の酸素分圧は増加する請求項6に記載のセラミック線材形成方法。
- 前記第2容器内の温度は前記第1容器及び前記第3容器内の温度より高い請求項5に記載のセラミック線材形成方法。
- 前記第1容器及び前記第3容器内の温度は前記第2容器から遠くなるほど、低くなる請求項8に記載のセラミック線材形成方法。
- 前記第2容器内の温度は800℃以上であり、前記第2容器内の酸素分圧は0.01Torrから0.3Torrの範囲内である請求項5に記載のセラミック線材形成方法。
- 前記セラミック前駆体膜が蒸着された線材基板を熱処理することは、
前記線材基板を連続的に通過させ得る前記プロセッシングチャンバー内で遂行され、前記プロセッシングチャンバー中心部分から遠くなるほど、温度は減少する請求項1に記載のセラミック線材形成方法。 - 前記セラミック前駆体膜を蒸着することは、前記線材基板の上に希土類Re、バリウムBa及び銅Cuを提供することを含む請求項1に記載のセラミック線材形成方法。
- 前記セラミック前駆体膜はRe2BaCuO5、ReBa3Cu2O6、及びBaCu2O2に分解された状態を有し、前記セラミック前駆体膜が液体状態を有するようにすることは前記セラミック前駆体膜でBaCu2O2が液体状態を有するようにすることを含む請求項12に記載のセラミック線材形成方法。
- 前記セラミック前駆体膜は蒸発法又は有機金属蒸着法によって形成される請求項1に記載のセラミック線材形成方法。
- テープ形状の基板と、
前記基板の上のバッファ層と、
前記バッファ層の上に、希土類、バリウム、及び銅を含む超伝導膜と、を含み、
前記超伝導膜は前記バッファ層に隣接し、超伝導相を有する第1部分と、前記第1部分上に超伝導相と異なる相を有する第2部分と、を含む超伝導線材。 - 前記第2部分は前記第1部分と異なる結晶構造を有する少なくとも1つの相を含む請求項15に記載の超伝導線材。
- 前記超伝導線材は77Kの温度で1MA/cm2以上の電流密度を有する請求項15に記載の超伝導線材。
- 線材基板の上にセラミック薄膜を形成するための薄膜蒸着ユニットと、
前記薄膜蒸着ユニットで形成されたセラミック薄膜を含む線材基板を熱処理するための熱処理ユニットと、を含み、
前記熱処理ユニットは、前記線材基板を連続的に通過させることができ、順に隣接する第1容器、第2容器、及び第3容器を含み、前記第1容器、前記第2容器、及び前記第3容器は互いに独立的にポンピングされて独立的な真空を維持でき、互いに独立的に温度を維持できるように構成されたセラミック線材形成システム。 - 前記第1容器内の酸素分圧は前記第3容器内の酸素分圧より低くて、前記第2容器内の酸素分圧は前記第1容器内と前記第3容器内との酸素分圧との間に維持される請求項18に記載のセラミック線材形成システム。
- 前記第2容器内の温度は前記第1容器及び前記第3容器内の温度より高い請求項19に記載のセラミック線材形成システム。
- 前記第1容器及び前記第3容器内の温度は前記第2容器から離れるほど、低くなる請求項19に記載のセラミック線材形成システム。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20100011151 | 2010-02-05 | ||
KR10-2010-0011151 | 2010-02-05 | ||
KR10-2010-0074924 | 2010-08-03 | ||
PCT/KR2010/005103 WO2011096624A1 (en) | 2010-02-05 | 2010-08-03 | Method of forming ceramic wire, system of forming the same, and superconductor wire using the same |
KR1020100074924A KR101158747B1 (ko) | 2010-02-05 | 2010-08-03 | 세라믹 선재 형성 방법, 세라믹 선재 형성 시스템, 및 이를 이용한 초전도 선재 |
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JP2015532630A (ja) * | 2012-08-06 | 2015-11-12 | エスエヌユー アールアンドディービー ファウンデイション | 超伝導体及び超伝導体の形成方法 |
KR20160083829A (ko) * | 2016-06-27 | 2016-07-12 | 서울대학교산학협력단 | 초전도체, 초전도 선재, 및 초전도체 형성방법 |
US9634223B2 (en) | 2014-07-09 | 2017-04-25 | Sunam Co., Ltd. | Superconductor, superconducting wire, and method of forming the superconductor |
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EP2532013B1 (en) | 2016-01-13 |
ES2567462T3 (es) | 2016-04-22 |
RU2012134904A (ru) | 2014-03-10 |
US20120329658A1 (en) | 2012-12-27 |
US9362477B2 (en) | 2016-06-07 |
JP5671556B2 (ja) | 2015-02-18 |
KR101183158B1 (ko) | 2012-09-17 |
KR20110091422A (ko) | 2011-08-11 |
RU2521827C2 (ru) | 2014-07-10 |
KR20120079456A (ko) | 2012-07-12 |
EP2532013A1 (en) | 2012-12-12 |
EP2532013A4 (en) | 2013-09-04 |
WO2011096624A1 (en) | 2011-08-11 |
KR101123830B1 (ko) | 2012-03-16 |
KR20110122082A (ko) | 2011-11-09 |
CN102884594A (zh) | 2013-01-16 |
CN102884594B (zh) | 2016-06-08 |
KR20110122081A (ko) | 2011-11-09 |
KR101158747B1 (ko) | 2012-06-22 |
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