JP2013516793A5 - - Google Patents

Download PDF

Info

Publication number
JP2013516793A5
JP2013516793A5 JP2012548085A JP2012548085A JP2013516793A5 JP 2013516793 A5 JP2013516793 A5 JP 2013516793A5 JP 2012548085 A JP2012548085 A JP 2012548085A JP 2012548085 A JP2012548085 A JP 2012548085A JP 2013516793 A5 JP2013516793 A5 JP 2013516793A5
Authority
JP
Japan
Prior art keywords
field effect
type field
effect transistor
asymmetric
implant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2012548085A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013516793A (ja
JP5717763B2 (ja
Filing date
Publication date
Priority claimed from US12/683,634 external-priority patent/US8643107B2/en
Application filed filed Critical
Publication of JP2013516793A publication Critical patent/JP2013516793A/ja
Publication of JP2013516793A5 publication Critical patent/JP2013516793A5/ja
Application granted granted Critical
Publication of JP5717763B2 publication Critical patent/JP5717763B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2012548085A 2010-01-07 2011-01-05 非対称ｎ型電界効果トランジスタおよびこれを形成するための方法 Expired - Fee Related JP5717763B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/683,634 2010-01-07
US12/683,634 US8643107B2 (en) 2010-01-07 2010-01-07 Body-tied asymmetric N-type field effect transistor
PCT/US2011/020173 WO2011084975A2 (en) 2010-01-07 2011-01-05 A body-tied asymmetric n-type field effect transistor

Publications (3)

Publication Number Publication Date
JP2013516793A JP2013516793A (ja) 2013-05-13
JP2013516793A5 true JP2013516793A5 (https=) 2014-08-14
JP5717763B2 JP5717763B2 (ja) 2015-05-13

Family

ID=44224203

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012548085A Expired - Fee Related JP5717763B2 (ja) 2010-01-07 2011-01-05 非対称ｎ型電界効果トランジスタおよびこれを形成するための方法

Country Status (5)

Country Link
US (1) US8643107B2 (https=)
EP (1) EP2522032A4 (https=)
JP (1) JP5717763B2 (https=)
CN (1) CN102714222B (https=)
WO (1) WO2011084975A2 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102332394A (zh) * 2011-07-28 2012-01-25 上海宏力半导体制造有限公司 半导体器件、mos晶体管及其形成方法
US8674422B2 (en) * 2012-01-30 2014-03-18 Synopsys, Inc. Asymmetric dense floating gate nonvolatile memory with decoupled capacitor
US8853761B2 (en) 2012-01-30 2014-10-07 Synopsys, Inc. Asymmetric dense floating gate nonvolatile memory with decoupled capacitor
US8822278B2 (en) * 2012-03-29 2014-09-02 International Business Machines Corporation Asymmetric FET formed through use of variable pitch gate for use as logic device and test structure
US9842858B2 (en) 2015-11-18 2017-12-12 Peregrine Semiconductor Corporation Butted body contact for SOI transistor
US9837965B1 (en) 2016-09-16 2017-12-05 Peregrine Semiconductor Corporation Standby voltage condition for fast RF amplifier bias recovery
US9960737B1 (en) 2017-03-06 2018-05-01 Psemi Corporation Stacked PA power control
CN113327983B (zh) * 2021-05-26 2023-05-05 武汉新芯集成电路制造有限公司 半导体器件及其制造方法

Family Cites Families (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USH986H (en) * 1989-06-09 1991-11-05 International Business Machines Corporation Field effect-transistor with asymmetrical structure
US5095348A (en) * 1989-10-02 1992-03-10 Texas Instruments Incorporated Semiconductor on insulator transistor
US5185280A (en) * 1991-01-29 1993-02-09 Texas Instruments Incorporated Method of fabricating a soi transistor with pocket implant and body-to-source (bts) contact
USH1435H (en) * 1991-10-21 1995-05-02 Cherne Richard D SOI CMOS device having body extension for providing sidewall channel stop and bodytie
US5145802A (en) * 1991-11-12 1992-09-08 United Technologies Corporation Method of making SOI circuit with buried connectors
US5317181A (en) * 1992-09-10 1994-05-31 United Technologies Corporation Alternative body contact for fully-depleted silicon-on-insulator transistors
US5358879A (en) * 1993-04-30 1994-10-25 Loral Federal Systems Company Method of making gate overlapped lightly doped drain for buried channel devices
JP3514500B2 (ja) * 1994-01-28 2004-03-31 株式会社ルネサステクノロジ 半導体装置及びその製造方法
US5650340A (en) * 1994-08-18 1997-07-22 Sun Microsystems, Inc. Method of making asymmetric low power MOS devices
US5767549A (en) * 1996-07-03 1998-06-16 International Business Machines Corporation SOI CMOS structure
US5677224A (en) * 1996-09-03 1997-10-14 Advanced Micro Devices, Inc. Method of making asymmetrical N-channel and P-channel devices
US6083794A (en) * 1997-07-10 2000-07-04 International Business Machines Corporation Method to perform selective drain engineering with a non-critical mask
JP3447927B2 (ja) * 1997-09-19 2003-09-16 株式会社東芝 半導体装置およびその製造方法
US6353245B1 (en) * 1998-04-09 2002-03-05 Texas Instruments Incorporated Body-tied-to-source partially depleted SOI MOSFET
US6198142B1 (en) * 1998-07-31 2001-03-06 Intel Corporation Transistor with minimal junction capacitance and method of fabrication
TW432545B (en) * 1998-08-07 2001-05-01 Ibm Method and improved SOI body contact structure for transistors
US6380572B1 (en) * 1998-10-07 2002-04-30 California Institute Of Technology Silicon-on-insulator (SOI) active pixel sensors with the photosite implemented in the substrate
US6420761B1 (en) * 1999-01-20 2002-07-16 International Business Machines Corporation Asymmetrical semiconductor device for ESD protection
US6242329B1 (en) * 1999-02-03 2001-06-05 Advanced Micro Devices, Inc. Method for manufacturing asymmetric channel transistor
US6268630B1 (en) * 1999-03-16 2001-07-31 Sandia Corporation Silicon-on-insulator field effect transistor with improved body ties for rad-hard applications
US6384457B2 (en) * 1999-05-03 2002-05-07 Intel Corporation Asymmetric MOSFET devices
US6482724B1 (en) * 1999-09-07 2002-11-19 Texas Instruments Incorporated Integrated circuit asymmetric transistors
US6255219B1 (en) * 1999-09-07 2001-07-03 Advanced Micro Devices, Inc. Method for fabricating high-performance submicron MOSFET with lateral asymmetric channel
US6362665B1 (en) * 1999-11-19 2002-03-26 Intersil Americas Inc. Backwards drivable MOS output driver
US6255694B1 (en) * 2000-01-18 2001-07-03 International Business Machines Corporation Multi-function semiconductor structure and method
US6201761B1 (en) * 2000-01-26 2001-03-13 Advanced Micro Devices, Inc. Field effect transistor with controlled body bias
US6667512B1 (en) * 2000-01-28 2003-12-23 Advanced Micro Devices, Inc. Asymmetric retrograde halo metal-oxide-semiconductor field-effect transistor (MOSFET)
US6274441B1 (en) * 2000-04-27 2001-08-14 International Business Machines Corporation Method of forming bitline diffusion halo under gate conductor ledge
US6429482B1 (en) * 2000-06-08 2002-08-06 International Business Machines Corporation Halo-free non-rectifying contact on chip with halo source/drain diffusion
JP2002246600A (ja) * 2001-02-13 2002-08-30 Mitsubishi Electric Corp 半導体装置及びその製造方法
US6466489B1 (en) * 2001-05-18 2002-10-15 International Business Machines Corporation Use of source/drain asymmetry MOSFET devices in dynamic and analog circuits
US6509609B1 (en) * 2001-06-18 2003-01-21 Motorola, Inc. Grooved channel schottky MOSFET
US6489223B1 (en) * 2001-07-03 2002-12-03 International Business Machines Corporation Angled implant process
US6756637B2 (en) * 2001-07-06 2004-06-29 International Business Machines Corporation Method of controlling floating body effects in an asymmetrical SOI device
JP4134545B2 (ja) * 2001-10-02 2008-08-20 日本電気株式会社 半導体装置
US20030062571A1 (en) * 2001-10-03 2003-04-03 Franca-Neto Luiz M. Low noise microwave transistor based on low carrier velocity dispersion control
US6610576B2 (en) * 2001-12-13 2003-08-26 International Business Machines Corporation Method for forming asymmetric dual gate transistor
US6620656B2 (en) * 2001-12-19 2003-09-16 Motorola, Inc. Method of forming body-tied silicon on insulator semiconductor device
JP3636691B2 (ja) * 2001-12-26 2005-04-06 旭化成マイクロシステム株式会社 半導体装置の製造方法
US6596594B1 (en) * 2002-02-22 2003-07-22 Taiwan Semiconductor Manufacturing Co., Ltd Method for fabricating field effect transistor (FET) device with asymmetric channel region and asymmetric source and drain regions
US7226843B2 (en) * 2002-09-30 2007-06-05 Intel Corporation Indium-boron dual halo MOSFET
US20040087094A1 (en) * 2002-10-30 2004-05-06 Advanced Micro Devices, Inc. Semiconductor component and method of manufacture
US6833307B1 (en) * 2002-10-30 2004-12-21 Advanced Micro Devices, Inc. Method for manufacturing a semiconductor component having an early halo implant
US6746924B1 (en) * 2003-02-27 2004-06-08 International Business Machines Corporation Method of forming asymmetric extension mosfet using a drain side spacer
US7138318B2 (en) * 2003-05-28 2006-11-21 Advanced Micro Devices, Inc. Method of fabricating body-tied SOI transistor having halo implant region underlying hammerhead portion of gate
US7009248B2 (en) * 2003-10-02 2006-03-07 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with asymmetric pocket implants
US6953738B2 (en) * 2003-12-12 2005-10-11 Freescale Semiconductor, Inc. Method and apparatus for forming an SOI body-contacted transistor
KR100521440B1 (ko) * 2003-12-27 2005-10-13 동부아남반도체 주식회사 ｎ채널형 모스 트랜지스터의 할로 영역 형성 방법
US7132683B1 (en) * 2004-05-05 2006-11-07 Advanced Micro Devices, Inc. Dual purpose test structure for gate-body current measurement in PD/SOI and for direct extraction of physical gate length in scaled CMOS technologies
US7125777B2 (en) * 2004-07-15 2006-10-24 Fairchild Semiconductor Corporation Asymmetric hetero-doped high-voltage MOSFET (AH2MOS)
DE102004042156B4 (de) * 2004-08-31 2010-10-28 Advanced Micro Devices, Inc., Sunnyvale Transistor mit asymmetrischem Source/Drain- und Halo- Implantationsgebiet und Verfahren zum Herstellen desselben
US6949796B1 (en) * 2004-09-21 2005-09-27 International Business Machines Corporation Halo implant in semiconductor structures
US6982216B1 (en) * 2004-10-27 2006-01-03 Sony Corporation MOSFET having reduced parasitic resistance and method of forming same
JP2006210653A (ja) * 2005-01-28 2006-08-10 Fujitsu Ltd 半導体装置、半導体集積回路装置および半導体装置の製造方法
DE102005009023B4 (de) * 2005-02-28 2011-01-27 Advanced Micro Devices, Inc., Sunnyvale Verfahren zum Herstellen einer Gateelektrodenstruktur mit asymmetrischen Abstandselementen und Gateestruktur
US7129138B1 (en) * 2005-04-14 2006-10-31 International Business Machines Corporation Methods of implementing and enhanced silicon-on-insulator (SOI) box structures
US7605429B2 (en) * 2005-04-15 2009-10-20 International Business Machines Corporation Hybrid crystal orientation CMOS structure for adaptive well biasing and for power and performance enhancement
US7274072B2 (en) * 2005-04-15 2007-09-25 International Business Machines Corporation Hybrid bulk-SOI 6T-SRAM cell for improved cell stability and performance
JP5154000B2 (ja) * 2005-05-13 2013-02-27 ラピスセミコンダクタ株式会社 半導体装置
US7465976B2 (en) * 2005-05-13 2008-12-16 Intel Corporation Tunneling field effect transistor using angled implants for forming asymmetric source/drain regions
US7396713B2 (en) * 2005-10-07 2008-07-08 International Business Machines Corporation Structure and method for forming asymmetrical overlap capacitance in field effect transistors
US20070099386A1 (en) * 2005-10-31 2007-05-03 International Business Machines Corporation Integration scheme for high gain fet in standard cmos process
US20070257310A1 (en) * 2006-05-02 2007-11-08 Honeywell International Inc. Body-tied MOSFET device with strained active area
US7803670B2 (en) * 2006-07-20 2010-09-28 Freescale Semiconductor, Inc. Twisted dual-substrate orientation (DSO) substrates
US8586981B2 (en) * 2006-10-05 2013-11-19 Advanced Micro Devices, Inc. Silicon-on-insulator (“SOI”) transistor test structure for measuring body-effect
ITMI20070353A1 (it) * 2007-02-23 2008-08-24 Univ Padova Transistore ad effetto di campo con giunzione metallo-semiconduttore.
US8587062B2 (en) * 2007-03-26 2013-11-19 International Business Machines Corporation Silicon on insulator (SOI) field effect transistors (FETs) with adjacent body contacts
US7595247B2 (en) * 2007-05-25 2009-09-29 International Business Machines Corporation Halo-first ultra-thin SOI FET for superior short channel control
US7655983B2 (en) * 2007-06-04 2010-02-02 International Business Machines Corporation SOI FET with source-side body doping
US7679139B2 (en) * 2007-09-11 2010-03-16 Honeywell International Inc. Non-planar silicon-on-insulator device that includes an “area-efficient” body tie
US7880229B2 (en) * 2007-10-18 2011-02-01 Globalfoundries Inc. Body tie test structure for accurate body effect measurement
JP2009266868A (ja) * 2008-04-22 2009-11-12 Oki Semiconductor Co Ltd Ｍｏｓｆｅｔおよびｍｏｓｆｅｔの製造方法
US7820530B2 (en) * 2008-10-01 2010-10-26 Freescale Semiconductor, Inc. Efficient body contact field effect transistor with reduced body resistance

Similar Documents

Publication Publication Date Title
JP2013516791A5 (https=)
JP2013516793A5 (https=)
WO2011031565A3 (en) Super junction trench power mosfet device fabrication
GB2488642B (en) Method and structure for forming finfets with multiple doping regions on a same chip
WO2011123333A3 (en) Ldmos device with p-body for reduced capacitance
WO2011031563A3 (en) Super junction trench power mosfet devices
GB201212740D0 (en) Fabrication of a vertical heterojunction tunnel-fet
SG151209A1 (en) Method for fabricating semiconductor devices with reduced junction diffusion
EP2811527A3 (en) Dual-mode transistor devices and methods for operating same
EP2704188A3 (en) Semiconductor device and method of fabricating the same
TW201712873A (en) High electron mobility transistors with localized sub-fin isolation
ATE544182T1 (de) Feldeffekttransistor des fin-typs
WO2012119125A3 (en) High performance graphene transistors and fabrication processes thereof
TW200733251A (en) Power device utilizing chemical mechanical planarization
SG170670A1 (en) Method of fabricating a silicon tunneling field effect transistor (tfet) with high drive current
WO2012145025A3 (en) Source/drain extension control for advanced transistors
WO2009105466A3 (en) Reduced leakage current field-effect transistor having asymmetric doping and fabrication method therefor
JP2010206100A5 (https=)
GB2453495A (en) A transistor having a strained channel region including a performance enhancing material composition
WO2011160041A3 (en) High voltage transistor using diluted drain
WO2011084975A3 (en) A body-tied asymmetric n-type field effect transistor
WO2011149768A3 (en) Self-aligned semiconductor devices with reduced gate-source leakage under reverse bias and methods of making
US10665676B2 (en) Body contact layouts for semiconductor structures
WO2011056391A3 (en) High-drive current mosfet
WO2012106834A8 (en) Semiconductor device and related fabrication methods