JP2013514643A5 - - Google Patents
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- JP2013514643A5 JP2013514643A5 JP2012543594A JP2012543594A JP2013514643A5 JP 2013514643 A5 JP2013514643 A5 JP 2013514643A5 JP 2012543594 A JP2012543594 A JP 2012543594A JP 2012543594 A JP2012543594 A JP 2012543594A JP 2013514643 A5 JP2013514643 A5 JP 2013514643A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- metal oxide
- solution
- dielectric
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 31
- 229910044991 metal oxide Inorganic materials 0.000 claims description 21
- 150000004706 metal oxides Chemical class 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 19
- 150000001875 compounds Chemical class 0.000 claims description 16
- -1 modified silicon oxide compound Chemical class 0.000 claims description 16
- 239000002243 precursor Substances 0.000 claims description 16
- 239000006185 dispersion Substances 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 claims 8
- 239000005020 polyethylene terephthalate Substances 0.000 claims 8
- 239000000203 mixture Substances 0.000 claims 6
- 125000005842 heteroatom Chemical group 0.000 claims 5
- 125000000217 alkyl group Chemical group 0.000 claims 4
- 229910052751 metal Inorganic materials 0.000 claims 4
- 239000002184 metal Substances 0.000 claims 4
- 239000011112 polyethylene naphthalate Substances 0.000 claims 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims 4
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 claims 3
- 239000004642 Polyimide Substances 0.000 claims 3
- 229910021432 inorganic complex Inorganic materials 0.000 claims 3
- 229920002492 poly(sulfone) Polymers 0.000 claims 3
- 229920000515 polycarbonate Polymers 0.000 claims 3
- 239000004417 polycarbonate Substances 0.000 claims 3
- 229920000728 polyester Polymers 0.000 claims 3
- 229920001721 polyimide Polymers 0.000 claims 3
- 150000001298 alcohols Chemical class 0.000 claims 2
- 150000001299 aldehydes Chemical class 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- 150000001408 amides Chemical class 0.000 claims 2
- 150000001412 amines Chemical class 0.000 claims 2
- 150000001491 aromatic compounds Chemical class 0.000 claims 2
- 125000003118 aryl group Chemical group 0.000 claims 2
- 150000001735 carboxylic acids Chemical class 0.000 claims 2
- 150000001768 cations Chemical class 0.000 claims 2
- 150000002148 esters Chemical class 0.000 claims 2
- 150000002170 ethers Chemical class 0.000 claims 2
- 150000002576 ketones Chemical class 0.000 claims 2
- 230000003647 oxidation Effects 0.000 claims 2
- 238000007254 oxidation reaction Methods 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 239000002904 solvent Substances 0.000 claims 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 2
- 125000003358 C2-C20 alkenyl group Chemical group 0.000 claims 1
- 125000000304 alkynyl group Chemical group 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 125000000732 arylene group Chemical group 0.000 claims 1
- 125000004429 atom Chemical group 0.000 claims 1
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 125000000753 cycloalkyl group Chemical group 0.000 claims 1
- 238000003618 dip coating Methods 0.000 claims 1
- 239000002270 dispersing agent Substances 0.000 claims 1
- 125000000524 functional group Chemical group 0.000 claims 1
- 125000001072 heteroaryl group Chemical group 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- KBXJHRABGYYAFC-UHFFFAOYSA-N octaphenylsilsesquioxane Chemical group O1[Si](O2)(C=3C=CC=CC=3)O[Si](O3)(C=4C=CC=CC=4)O[Si](O4)(C=5C=CC=CC=5)O[Si]1(C=1C=CC=CC=1)O[Si](O1)(C=5C=CC=CC=5)O[Si]2(C=2C=CC=CC=2)O[Si]3(C=2C=CC=CC=2)O[Si]41C1=CC=CC=C1 KBXJHRABGYYAFC-UHFFFAOYSA-N 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 238000009832 plasma treatment Methods 0.000 claims 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 claims 1
- 229920003217 poly(methylsilsesquioxane) Polymers 0.000 claims 1
- 229920006290 polyethylene naphthalate film Polymers 0.000 claims 1
- 238000004528 spin coating Methods 0.000 claims 1
- 238000005507 spraying Methods 0.000 claims 1
- 229910052717 sulfur Inorganic materials 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP09179923 | 2009-12-18 | ||
| EP09179923.9 | 2009-12-18 | ||
| PCT/EP2010/068867 WO2011073044A1 (de) | 2009-12-18 | 2010-12-03 | Metalloxid-feldeffekttransistoren auf mechanisch flexiblem polymersubstrat mit aus lösung prozessierbarem dielektrikum bei niedrigen temperaturen |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2013514643A JP2013514643A (ja) | 2013-04-25 |
| JP2013514643A5 true JP2013514643A5 (https=) | 2014-01-23 |
Family
ID=43608708
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012543594A Pending JP2013514643A (ja) | 2009-12-18 | 2010-12-03 | 機械的に可撓性のポリマー基体上に低温で溶液から処理可能な誘電体を有する金属酸化物電界効果トランジスタ |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9263591B2 (https=) |
| EP (1) | EP2513971A1 (https=) |
| JP (1) | JP2013514643A (https=) |
| KR (1) | KR20120123343A (https=) |
| CN (1) | CN102668086B (https=) |
| TW (1) | TW201144059A (https=) |
| WO (1) | WO2011073044A1 (https=) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110107130A (ko) * | 2010-03-24 | 2011-09-30 | 삼성전자주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
| DE102011084145A1 (de) * | 2011-10-07 | 2013-04-11 | Evonik Degussa Gmbh | Verfahren zur Herstellung von hochperformanten und elektrisch stabilen, halbleitenden Metalloxidschichten, nach dem Verfahren hergestellte Schichten und deren Verwendung |
| KR20130042867A (ko) * | 2011-10-19 | 2013-04-29 | 삼성디스플레이 주식회사 | 보호막 용액 조성물, 박막 트랜지스터 표시판 및 박막 트랜지스터 표시판 제조 방법 |
| CN104081498A (zh) * | 2012-01-27 | 2014-10-01 | 默克专利有限公司 | 生产具有改进电导率的半导电或导电层的方法 |
| EP3011373B1 (de) * | 2013-06-20 | 2017-11-15 | Merck Patent GmbH | Verfahren zur steuerung der optischen eigenschaften von uv-filterschichten |
| US10060033B2 (en) | 2013-09-03 | 2018-08-28 | Merck Patent Gmbh | Precursors for the production of thin oxide layers and the use thereof |
| KR102045027B1 (ko) * | 2017-12-27 | 2019-11-21 | (주)바이오필리아 | 산화물 박막 트랜지스터 제조 방법 및 이를 이용해서 제조되는 산화물 박막 트랜지스터 |
| US10665545B2 (en) * | 2018-09-19 | 2020-05-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor devices, semiconductor packages and methods of forming the same |
| FI20236200A1 (en) * | 2023-10-27 | 2025-04-28 | Pibond Oy | Solution-processable organometallic complexes and their use |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5198673A (en) * | 1992-01-23 | 1993-03-30 | General Electric Company | Radiation image detector with optical gain selenium photosensors |
| US6391690B2 (en) * | 1995-12-14 | 2002-05-21 | Seiko Epson Corporation | Thin film semiconductor device and method for producing the same |
| US7323634B2 (en) * | 1998-10-14 | 2008-01-29 | Patterning Technologies Limited | Method of forming an electronic device |
| US6322860B1 (en) * | 1998-11-02 | 2001-11-27 | Rohm And Haas Company | Plastic substrates for electronic display applications |
| US6891237B1 (en) | 2000-06-27 | 2005-05-10 | Lucent Technologies Inc. | Organic semiconductor device having an active dielectric layer comprising silsesquioxanes |
| US7242039B2 (en) | 2004-03-12 | 2007-07-10 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
| US7374984B2 (en) * | 2004-10-29 | 2008-05-20 | Randy Hoffman | Method of forming a thin film component |
| US7691666B2 (en) * | 2005-06-16 | 2010-04-06 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
| EP1998373A3 (en) * | 2005-09-29 | 2012-10-31 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method thereof |
| US8097877B2 (en) * | 2005-12-20 | 2012-01-17 | Northwestern University | Inorganic-organic hybrid thin-film transistors using inorganic semiconducting films |
| US20080012074A1 (en) * | 2006-07-14 | 2008-01-17 | Air Products And Chemicals, Inc. | Low Temperature Sol-Gel Silicates As Dielectrics or Planarization Layers For Thin Film Transistors |
| US7652339B2 (en) * | 2007-04-06 | 2010-01-26 | Xerox Corporation | Ambipolar transistor design |
| WO2009038606A2 (en) * | 2007-06-01 | 2009-03-26 | Northwestern University | Transparent nanowire transistors and methods for fabricating same |
| US8354674B2 (en) * | 2007-06-29 | 2013-01-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer |
| DE102007043920A1 (de) * | 2007-07-17 | 2009-01-22 | Merck Patent Gmbh | Funktionelles Material für gedruckte elektronische Bauteile |
| CN101896537B (zh) | 2007-12-10 | 2012-10-24 | 株式会社钟化 | 具有碱显影性的固化性组合物、使用该组合物的绝缘性薄膜以及薄膜晶体管 |
| US8017458B2 (en) * | 2008-01-31 | 2011-09-13 | Northwestern University | Solution-processed high mobility inorganic thin-film transistors |
| JP5368014B2 (ja) * | 2008-06-24 | 2013-12-18 | 共同印刷株式会社 | フレキシブル有機ｅｌディスプレイの製造方法 |
| JP2010056541A (ja) * | 2008-07-31 | 2010-03-11 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| US8212246B2 (en) * | 2008-08-13 | 2012-07-03 | Board Of Regents, The University Of Texas System | N-type doping in metal oxides and metal chalcogenides by electrochemical methods |
| JP5599797B2 (ja) | 2008-09-04 | 2014-10-01 | ビーエーエスエフ ソシエタス・ヨーロピア | 変性された粒子、及びこれらを含む分散液 |
| WO2010125011A2 (de) | 2009-04-28 | 2010-11-04 | Basf Se | Verfahren zur herstellung von halbleitenden schichten |
| WO2010146053A1 (de) | 2009-06-16 | 2010-12-23 | Basf Se | Thermolabile vorläufer-verbindungen zur verbesserung der interpartikulären kontaktstellen und zum auffüllen der zwischenräume in halbleitenden metalloxidpartikelschichten |
| US8691168B2 (en) * | 2010-04-28 | 2014-04-08 | Basf Se | Process for preparing a zinc complex in solution |
-
2010
- 2010-12-03 JP JP2012543594A patent/JP2013514643A/ja active Pending
- 2010-12-03 EP EP10785431A patent/EP2513971A1/de not_active Ceased
- 2010-12-03 KR KR1020127018846A patent/KR20120123343A/ko not_active Withdrawn
- 2010-12-03 US US13/515,303 patent/US9263591B2/en not_active Expired - Fee Related
- 2010-12-03 WO PCT/EP2010/068867 patent/WO2011073044A1/de not_active Ceased
- 2010-12-03 CN CN201080057432.6A patent/CN102668086B/zh not_active Expired - Fee Related
- 2010-12-17 TW TW099144621A patent/TW201144059A/zh unknown
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