JP2013514643A - 機械的に可撓性のポリマー基体上に低温で溶液から処理可能な誘電体を有する金属酸化物電界効果トランジスタ - Google Patents

機械的に可撓性のポリマー基体上に低温で溶液から処理可能な誘電体を有する金属酸化物電界効果トランジスタ Download PDF

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JP2013514643A
JP2013514643A JP2012543594A JP2012543594A JP2013514643A JP 2013514643 A JP2013514643 A JP 2013514643A JP 2012543594 A JP2012543594 A JP 2012543594A JP 2012543594 A JP2012543594 A JP 2012543594A JP 2013514643 A JP2013514643 A JP 2013514643A
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substrate
solution
metal oxide
dielectric
semiconductor metal
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JP2013514643A5 (https=
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フライシュハーカー フリーデリケ
ウロカ ヴェロニカ
カイザー トーマス
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BASF SE
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3426—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0241—Manufacture or treatment of multiple TFTs using liquid deposition, e.g. printing

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  • Thin Film Transistor (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Formation Of Insulating Films (AREA)
JP2012543594A 2009-12-18 2010-12-03 機械的に可撓性のポリマー基体上に低温で溶液から処理可能な誘電体を有する金属酸化物電界効果トランジスタ Pending JP2013514643A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP09179923 2009-12-18
EP09179923.9 2009-12-18
PCT/EP2010/068867 WO2011073044A1 (de) 2009-12-18 2010-12-03 Metalloxid-feldeffekttransistoren auf mechanisch flexiblem polymersubstrat mit aus lösung prozessierbarem dielektrikum bei niedrigen temperaturen

Publications (2)

Publication Number Publication Date
JP2013514643A true JP2013514643A (ja) 2013-04-25
JP2013514643A5 JP2013514643A5 (https=) 2014-01-23

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JP2012543594A Pending JP2013514643A (ja) 2009-12-18 2010-12-03 機械的に可撓性のポリマー基体上に低温で溶液から処理可能な誘電体を有する金属酸化物電界効果トランジスタ

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Country Link
US (1) US9263591B2 (https=)
EP (1) EP2513971A1 (https=)
JP (1) JP2013514643A (https=)
KR (1) KR20120123343A (https=)
CN (1) CN102668086B (https=)
TW (1) TW201144059A (https=)
WO (1) WO2011073044A1 (https=)

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DE102011084145A1 (de) * 2011-10-07 2013-04-11 Evonik Degussa Gmbh Verfahren zur Herstellung von hochperformanten und elektrisch stabilen, halbleitenden Metalloxidschichten, nach dem Verfahren hergestellte Schichten und deren Verwendung
KR20130042867A (ko) * 2011-10-19 2013-04-29 삼성디스플레이 주식회사 보호막 용액 조성물, 박막 트랜지스터 표시판 및 박막 트랜지스터 표시판 제조 방법
CN104081498A (zh) * 2012-01-27 2014-10-01 默克专利有限公司 生产具有改进电导率的半导电或导电层的方法
EP3011373B1 (de) * 2013-06-20 2017-11-15 Merck Patent GmbH Verfahren zur steuerung der optischen eigenschaften von uv-filterschichten
US10060033B2 (en) 2013-09-03 2018-08-28 Merck Patent Gmbh Precursors for the production of thin oxide layers and the use thereof
KR102045027B1 (ko) * 2017-12-27 2019-11-21 (주)바이오필리아 산화물 박막 트랜지스터 제조 방법 및 이를 이용해서 제조되는 산화물 박막 트랜지스터
US10665545B2 (en) * 2018-09-19 2020-05-26 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices, semiconductor packages and methods of forming the same
FI20236200A1 (en) * 2023-10-27 2025-04-28 Pibond Oy Solution-processable organometallic complexes and their use

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WO2009010142A2 (en) * 2007-07-17 2009-01-22 Merck Patent Gmbh Organometallic zinc coumpoud for preparing zinc oxide films
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Publication number Publication date
US9263591B2 (en) 2016-02-16
WO2011073044A1 (de) 2011-06-23
TW201144059A (en) 2011-12-16
US20120280228A1 (en) 2012-11-08
CN102668086A (zh) 2012-09-12
KR20120123343A (ko) 2012-11-08
CN102668086B (zh) 2016-01-06
EP2513971A1 (de) 2012-10-24

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