KR20120123343A - 저온에서 용액으로부터 가공될 수 있는 유전체를 갖는 기계적 가요성 중합체 기판 상의 금속 산화물 전계 효과 트랜지스터 - Google Patents

저온에서 용액으로부터 가공될 수 있는 유전체를 갖는 기계적 가요성 중합체 기판 상의 금속 산화물 전계 효과 트랜지스터 Download PDF

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KR20120123343A
KR20120123343A KR1020127018846A KR20127018846A KR20120123343A KR 20120123343 A KR20120123343 A KR 20120123343A KR 1020127018846 A KR1020127018846 A KR 1020127018846A KR 20127018846 A KR20127018846 A KR 20127018846A KR 20120123343 A KR20120123343 A KR 20120123343A
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solution
substrate
metal oxide
dielectric
semiconductor metal
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Korean (ko)
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프리데리케 플라이쉬하커
베로니카 블로카
토마스 카이저
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바스프 에스이
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3426—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0241—Manufacture or treatment of multiple TFTs using liquid deposition, e.g. printing

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  • Thin Film Transistor (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Formation Of Insulating Films (AREA)
KR1020127018846A 2009-12-18 2010-12-03 저온에서 용액으로부터 가공될 수 있는 유전체를 갖는 기계적 가요성 중합체 기판 상의 금속 산화물 전계 효과 트랜지스터 Withdrawn KR20120123343A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP09179923 2009-12-18
EP09179923.9 2009-12-18
PCT/EP2010/068867 WO2011073044A1 (de) 2009-12-18 2010-12-03 Metalloxid-feldeffekttransistoren auf mechanisch flexiblem polymersubstrat mit aus lösung prozessierbarem dielektrikum bei niedrigen temperaturen

Publications (1)

Publication Number Publication Date
KR20120123343A true KR20120123343A (ko) 2012-11-08

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KR1020127018846A Withdrawn KR20120123343A (ko) 2009-12-18 2010-12-03 저온에서 용액으로부터 가공될 수 있는 유전체를 갖는 기계적 가요성 중합체 기판 상의 금속 산화물 전계 효과 트랜지스터

Country Status (7)

Country Link
US (1) US9263591B2 (https=)
EP (1) EP2513971A1 (https=)
JP (1) JP2013514643A (https=)
KR (1) KR20120123343A (https=)
CN (1) CN102668086B (https=)
TW (1) TW201144059A (https=)
WO (1) WO2011073044A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190078913A (ko) * 2017-12-27 2019-07-05 (주)바이오필리아 산화물 박막 트랜지스터 제조 방법 및 이를 이용해서 제조되는 산화물 박막 트랜지스터

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110107130A (ko) * 2010-03-24 2011-09-30 삼성전자주식회사 박막 트랜지스터 기판 및 이의 제조 방법
DE102011084145A1 (de) * 2011-10-07 2013-04-11 Evonik Degussa Gmbh Verfahren zur Herstellung von hochperformanten und elektrisch stabilen, halbleitenden Metalloxidschichten, nach dem Verfahren hergestellte Schichten und deren Verwendung
KR20130042867A (ko) * 2011-10-19 2013-04-29 삼성디스플레이 주식회사 보호막 용액 조성물, 박막 트랜지스터 표시판 및 박막 트랜지스터 표시판 제조 방법
CN104081498A (zh) * 2012-01-27 2014-10-01 默克专利有限公司 生产具有改进电导率的半导电或导电层的方法
EP3011373B1 (de) * 2013-06-20 2017-11-15 Merck Patent GmbH Verfahren zur steuerung der optischen eigenschaften von uv-filterschichten
US10060033B2 (en) 2013-09-03 2018-08-28 Merck Patent Gmbh Precursors for the production of thin oxide layers and the use thereof
US10665545B2 (en) * 2018-09-19 2020-05-26 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices, semiconductor packages and methods of forming the same
FI20236200A1 (en) * 2023-10-27 2025-04-28 Pibond Oy Solution-processable organometallic complexes and their use

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5198673A (en) * 1992-01-23 1993-03-30 General Electric Company Radiation image detector with optical gain selenium photosensors
US6391690B2 (en) * 1995-12-14 2002-05-21 Seiko Epson Corporation Thin film semiconductor device and method for producing the same
US7323634B2 (en) * 1998-10-14 2008-01-29 Patterning Technologies Limited Method of forming an electronic device
US6322860B1 (en) * 1998-11-02 2001-11-27 Rohm And Haas Company Plastic substrates for electronic display applications
US6891237B1 (en) 2000-06-27 2005-05-10 Lucent Technologies Inc. Organic semiconductor device having an active dielectric layer comprising silsesquioxanes
US7242039B2 (en) 2004-03-12 2007-07-10 Hewlett-Packard Development Company, L.P. Semiconductor device
US7374984B2 (en) * 2004-10-29 2008-05-20 Randy Hoffman Method of forming a thin film component
US7691666B2 (en) * 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
EP1998373A3 (en) * 2005-09-29 2012-10-31 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
US8097877B2 (en) * 2005-12-20 2012-01-17 Northwestern University Inorganic-organic hybrid thin-film transistors using inorganic semiconducting films
US20080012074A1 (en) * 2006-07-14 2008-01-17 Air Products And Chemicals, Inc. Low Temperature Sol-Gel Silicates As Dielectrics or Planarization Layers For Thin Film Transistors
US7652339B2 (en) * 2007-04-06 2010-01-26 Xerox Corporation Ambipolar transistor design
WO2009038606A2 (en) * 2007-06-01 2009-03-26 Northwestern University Transparent nanowire transistors and methods for fabricating same
US8354674B2 (en) * 2007-06-29 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer
DE102007043920A1 (de) * 2007-07-17 2009-01-22 Merck Patent Gmbh Funktionelles Material für gedruckte elektronische Bauteile
CN101896537B (zh) 2007-12-10 2012-10-24 株式会社钟化 具有碱显影性的固化性组合物、使用该组合物的绝缘性薄膜以及薄膜晶体管
US8017458B2 (en) * 2008-01-31 2011-09-13 Northwestern University Solution-processed high mobility inorganic thin-film transistors
JP5368014B2 (ja) * 2008-06-24 2013-12-18 共同印刷株式会社 フレキシブル有機ｅｌディスプレイの製造方法
JP2010056541A (ja) * 2008-07-31 2010-03-11 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US8212246B2 (en) * 2008-08-13 2012-07-03 Board Of Regents, The University Of Texas System N-type doping in metal oxides and metal chalcogenides by electrochemical methods
JP5599797B2 (ja) 2008-09-04 2014-10-01 ビーエーエスエフ ソシエタス・ヨーロピア 変性された粒子、及びこれらを含む分散液
WO2010125011A2 (de) 2009-04-28 2010-11-04 Basf Se Verfahren zur herstellung von halbleitenden schichten
WO2010146053A1 (de) 2009-06-16 2010-12-23 Basf Se Thermolabile vorläufer-verbindungen zur verbesserung der interpartikulären kontaktstellen und zum auffüllen der zwischenräume in halbleitenden metalloxidpartikelschichten
US8691168B2 (en) * 2010-04-28 2014-04-08 Basf Se Process for preparing a zinc complex in solution

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190078913A (ko) * 2017-12-27 2019-07-05 (주)바이오필리아 산화물 박막 트랜지스터 제조 방법 및 이를 이용해서 제조되는 산화물 박막 트랜지스터

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US9263591B2 (en) 2016-02-16
WO2011073044A1 (de) 2011-06-23
TW201144059A (en) 2011-12-16
US20120280228A1 (en) 2012-11-08
CN102668086A (zh) 2012-09-12
CN102668086B (zh) 2016-01-06
JP2013514643A (ja) 2013-04-25
EP2513971A1 (de) 2012-10-24

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