JP2013513956A5 - - Google Patents

Download PDF

Info

Publication number
JP2013513956A5
JP2013513956A5 JP2012543557A JP2012543557A JP2013513956A5 JP 2013513956 A5 JP2013513956 A5 JP 2013513956A5 JP 2012543557 A JP2012543557 A JP 2012543557A JP 2012543557 A JP2012543557 A JP 2012543557A JP 2013513956 A5 JP2013513956 A5 JP 2013513956A5
Authority
JP
Japan
Prior art keywords
region
web
semiconductor
semiconductor substrate
line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2012543557A
Other languages
English (en)
Japanese (ja)
Other versions
JP5744054B2 (ja
JP2013513956A (ja
Filing date
Publication date
Priority claimed from DE102009058345.9A external-priority patent/DE102009058345B4/de
Application filed filed Critical
Publication of JP2013513956A publication Critical patent/JP2013513956A/ja
Publication of JP2013513956A5 publication Critical patent/JP2013513956A5/ja
Application granted granted Critical
Publication of JP5744054B2 publication Critical patent/JP5744054B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2012543557A 2009-12-15 2010-11-12 半導体基体を製造する方法 Expired - Fee Related JP5744054B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009058345.9A DE102009058345B4 (de) 2009-12-15 2009-12-15 Halbleiterlaser
DE102009058345.9 2009-12-15
PCT/EP2010/067402 WO2011072964A1 (de) 2009-12-15 2010-11-12 Halbleiterlaser

Publications (3)

Publication Number Publication Date
JP2013513956A JP2013513956A (ja) 2013-04-22
JP2013513956A5 true JP2013513956A5 (https=) 2013-09-26
JP5744054B2 JP5744054B2 (ja) 2015-07-01

Family

ID=43567921

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012543557A Expired - Fee Related JP5744054B2 (ja) 2009-12-15 2010-11-12 半導体基体を製造する方法

Country Status (8)

Country Link
US (1) US8879596B2 (https=)
EP (1) EP2514049B1 (https=)
JP (1) JP5744054B2 (https=)
KR (1) KR101723143B1 (https=)
CN (1) CN102668277B (https=)
DE (1) DE102009058345B4 (https=)
TW (1) TWI438992B (https=)
WO (1) WO2011072964A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013107971A1 (de) * 2013-07-25 2015-01-29 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip, Halbleiterbauelement und Verfahren zur Herstellung von optoelektronischen Halbleiterchips
DE102013216527A1 (de) * 2013-08-21 2015-02-26 Osram Opto Semiconductors Gmbh Laserbauelement und Verfahren zum Herstellen eines Laserbauelements
DE102013220641A1 (de) 2013-10-14 2015-04-16 Osram Opto Semiconductors Gmbh Halbleiterlaser mit einseitig verbreiterter Ridgestruktur

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2044717A1 (en) 1990-06-18 1991-12-19 Candadai S. Ramadoss Process for the separation of proteins, polypeptides or metals
JPH0679172U (ja) * 1993-04-14 1994-11-04 松下電器産業株式会社 半導体レーザ
EP0874405A3 (en) 1997-03-25 2004-09-15 Mitsubishi Cable Industries, Ltd. GaN group crystal base member having low dislocation density, use thereof and manufacturing methods thereof
JPH11233877A (ja) * 1998-02-16 1999-08-27 Nec Corp アレイ型レーザダイオード
WO2002065556A1 (en) * 2001-02-15 2002-08-22 Sharp Kabushiki Kaisha Nitride semiconductor light emitting element and production therefor
US7498608B2 (en) 2001-10-29 2009-03-03 Sharp Kabushiki Kaisha Nitride-composite semiconductor laser element, its manufacturing method, and semiconductor optical device
US6812496B2 (en) 2002-01-10 2004-11-02 Sharp Kabushiki Kaisha Group III nitride semiconductor laser device
JP2003332676A (ja) * 2002-05-08 2003-11-21 Mitsubishi Electric Corp 半導体光装置
JP2004095859A (ja) * 2002-08-30 2004-03-25 Sharp Corp 半導体レーザ及びその製造方法
US7372077B2 (en) * 2003-02-07 2008-05-13 Sanyo Electric Co., Ltd. Semiconductor device
JP4880456B2 (ja) * 2004-11-22 2012-02-22 パナソニック株式会社 窒素化合物系半導体装置およびその製造方法
JP4617907B2 (ja) * 2005-02-03 2011-01-26 ソニー株式会社 光集積型半導体発光素子
JP2007173402A (ja) * 2005-12-20 2007-07-05 Matsushita Electric Ind Co Ltd 半導体レーザ装置
US20100085996A1 (en) * 2006-10-17 2010-04-08 Sanyo Electric Co., Ltd. Nitride semiconductor laser device and its manufacturing method
US20080130698A1 (en) * 2006-11-30 2008-06-05 Sanyo Electric Co., Ltd. Nitride-based semiconductor device and method of fabricating the same
JP2009088270A (ja) * 2007-09-28 2009-04-23 Sanyo Electric Co Ltd 半導体素子の製造方法
JP2009200478A (ja) * 2008-01-21 2009-09-03 Sanyo Electric Co Ltd 半導体レーザ素子およびその製造方法
JP2009200341A (ja) * 2008-02-22 2009-09-03 Sharp Corp 窒化物系半導体ウェハ、窒化物系半導体レーザ素子および窒化物系半導体レーザ素子の製造方法

Similar Documents

Publication Publication Date Title
WO2010116694A3 (en) Method of manufacturing semiconductor device
WO2008102548A1 (ja) 半導体発光素子および半導体発光装置の製造方法
EP2302703A3 (en) Method for manufacturing semiconductor light-emitting device and semiconductor light emitting device
US9859478B2 (en) Light emitting device having micro epitaxial structures and manufacturing method thereof
JP2009051002A5 (https=)
WO2011031098A3 (ko) 반도체 발광소자
WO2012165903A3 (ko) 반도체 발광 소자，그 제조 방법，이를 포함하는 반도체 발광 소자 패키지 및 레이저 가공 장치
CN101853842A (zh) 芯片封装体及其制作方法
JP2011522427A5 (https=)
JP2011513957A5 (https=)
JP2012118073A5 (https=)
EP2254167A3 (en) Light emitting device and light emitting device package having the same
EP1975998A3 (en) Method for manufacturing a plurality of island-shaped SOI structures
JP2009111375A5 (https=)
JP2012504875A5 (https=)
JP2013520024A5 (ja) 基板支持構造及び基板支持構造と基板支持構造の表面上にクランプされている基板との組み合わせ
JP2013069807A5 (https=)
TW201320203A (zh) 藉使用開槽基板以達成之低彎曲晶圓接合
EP2477218A3 (en) Double-sided substrate, semiconductor device and method for the same
WO2014017871A3 (ko) 반도체 발광소자
WO2007142865A3 (en) Thin film photovoltaic structure and fabrication
JP2013513956A5 (https=)
EP2031653A3 (en) Semiconductor device having multiple element formation regions and manufacturing method thereof
WO2010127320A3 (en) Methods for wafer bonding, and for nucleating bonding nanophases
JP2010251724A5 (https=)