TWI438992B - 半導體雷射 - Google Patents

半導體雷射 Download PDF

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Publication number
TWI438992B
TWI438992B TW099143215A TW99143215A TWI438992B TW I438992 B TWI438992 B TW I438992B TW 099143215 A TW099143215 A TW 099143215A TW 99143215 A TW99143215 A TW 99143215A TW I438992 B TWI438992 B TW I438992B
Authority
TW
Taiwan
Prior art keywords
semiconductor
region
semiconductor structure
bridge
bridge region
Prior art date
Application number
TW099143215A
Other languages
English (en)
Chinese (zh)
Other versions
TW201131918A (en
Inventor
迪米崔 迪尼
馬克 史屈格里斯
Original Assignee
歐斯朗奧托半導體股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 歐斯朗奧托半導體股份有限公司 filed Critical 歐斯朗奧托半導體股份有限公司
Publication of TW201131918A publication Critical patent/TW201131918A/zh
Application granted granted Critical
Publication of TWI438992B publication Critical patent/TWI438992B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/12—Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2201—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure in a specific crystallographic orientation

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
TW099143215A 2009-12-15 2010-12-10 半導體雷射 TWI438992B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102009058345.9A DE102009058345B4 (de) 2009-12-15 2009-12-15 Halbleiterlaser

Publications (2)

Publication Number Publication Date
TW201131918A TW201131918A (en) 2011-09-16
TWI438992B true TWI438992B (zh) 2014-05-21

Family

ID=43567921

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099143215A TWI438992B (zh) 2009-12-15 2010-12-10 半導體雷射

Country Status (8)

Country Link
US (1) US8879596B2 (https=)
EP (1) EP2514049B1 (https=)
JP (1) JP5744054B2 (https=)
KR (1) KR101723143B1 (https=)
CN (1) CN102668277B (https=)
DE (1) DE102009058345B4 (https=)
TW (1) TWI438992B (https=)
WO (1) WO2011072964A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013107971A1 (de) * 2013-07-25 2015-01-29 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip, Halbleiterbauelement und Verfahren zur Herstellung von optoelektronischen Halbleiterchips
DE102013216527A1 (de) * 2013-08-21 2015-02-26 Osram Opto Semiconductors Gmbh Laserbauelement und Verfahren zum Herstellen eines Laserbauelements
DE102013220641A1 (de) 2013-10-14 2015-04-16 Osram Opto Semiconductors Gmbh Halbleiterlaser mit einseitig verbreiterter Ridgestruktur

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2044717A1 (en) 1990-06-18 1991-12-19 Candadai S. Ramadoss Process for the separation of proteins, polypeptides or metals
JPH0679172U (ja) * 1993-04-14 1994-11-04 松下電器産業株式会社 半導体レーザ
EP0874405A3 (en) 1997-03-25 2004-09-15 Mitsubishi Cable Industries, Ltd. GaN group crystal base member having low dislocation density, use thereof and manufacturing methods thereof
JPH11233877A (ja) * 1998-02-16 1999-08-27 Nec Corp アレイ型レーザダイオード
WO2002065556A1 (en) * 2001-02-15 2002-08-22 Sharp Kabushiki Kaisha Nitride semiconductor light emitting element and production therefor
US7498608B2 (en) 2001-10-29 2009-03-03 Sharp Kabushiki Kaisha Nitride-composite semiconductor laser element, its manufacturing method, and semiconductor optical device
US6812496B2 (en) 2002-01-10 2004-11-02 Sharp Kabushiki Kaisha Group III nitride semiconductor laser device
JP2003332676A (ja) * 2002-05-08 2003-11-21 Mitsubishi Electric Corp 半導体光装置
JP2004095859A (ja) * 2002-08-30 2004-03-25 Sharp Corp 半導体レーザ及びその製造方法
US7372077B2 (en) * 2003-02-07 2008-05-13 Sanyo Electric Co., Ltd. Semiconductor device
JP4880456B2 (ja) * 2004-11-22 2012-02-22 パナソニック株式会社 窒素化合物系半導体装置およびその製造方法
JP4617907B2 (ja) * 2005-02-03 2011-01-26 ソニー株式会社 光集積型半導体発光素子
JP2007173402A (ja) * 2005-12-20 2007-07-05 Matsushita Electric Ind Co Ltd 半導体レーザ装置
US20100085996A1 (en) * 2006-10-17 2010-04-08 Sanyo Electric Co., Ltd. Nitride semiconductor laser device and its manufacturing method
US20080130698A1 (en) * 2006-11-30 2008-06-05 Sanyo Electric Co., Ltd. Nitride-based semiconductor device and method of fabricating the same
JP2009088270A (ja) * 2007-09-28 2009-04-23 Sanyo Electric Co Ltd 半導体素子の製造方法
JP2009200478A (ja) * 2008-01-21 2009-09-03 Sanyo Electric Co Ltd 半導体レーザ素子およびその製造方法
JP2009200341A (ja) * 2008-02-22 2009-09-03 Sharp Corp 窒化物系半導体ウェハ、窒化物系半導体レーザ素子および窒化物系半導体レーザ素子の製造方法

Also Published As

Publication number Publication date
EP2514049B1 (de) 2018-08-08
JP5744054B2 (ja) 2015-07-01
DE102009058345B4 (de) 2021-05-12
WO2011072964A1 (de) 2011-06-23
KR101723143B1 (ko) 2017-04-04
US8879596B2 (en) 2014-11-04
US20120287956A1 (en) 2012-11-15
KR20120112559A (ko) 2012-10-11
DE102009058345A1 (de) 2011-06-16
TW201131918A (en) 2011-09-16
JP2013513956A (ja) 2013-04-22
EP2514049A1 (de) 2012-10-24
CN102668277B (zh) 2014-06-18
CN102668277A (zh) 2012-09-12

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