JP2013500606A - Iii族窒化物半導体デバイス及びその製造方法 - Google Patents
Iii族窒化物半導体デバイス及びその製造方法 Download PDFInfo
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- JP2013500606A JP2013500606A JP2012522847A JP2012522847A JP2013500606A JP 2013500606 A JP2013500606 A JP 2013500606A JP 2012522847 A JP2012522847 A JP 2012522847A JP 2012522847 A JP2012522847 A JP 2012522847A JP 2013500606 A JP2013500606 A JP 2013500606A
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
- H01L29/66863—Lateral single gate transistors
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Abstract
【選択図】図1F
Description
20:チャネル層
22:バリア層
24:第1の保護層
24A:ビアホール
25:マスク
26、52:第1のレジスト層
28、54:第2のレジスト層
26A:第1のアパーチャ
27:不純物イオン
28A:第2のアパーチャ
30:マスキングゲート材料
32:マスキングゲート
34:ソース/ドレイン領域
36:第2の保護層
36A:開口部
38:随意的なレジスト層
40:ソースドレイン・コンタクト
42、62、82:ゲート・コンタクト
42A:ゲート・コンタクトの第1の部分
42B:ゲート・コンタクトの第2の部分
45:新たな保護層
56:第3のレジスト層
60:金属層
70:ゲート誘電体
80:導電性材料層
86:第2の保護層
88:被覆層
Claims (22)
- III族窒化物トランジスタ・デバイスを形成する方法であって、
III族窒化物半導体層上に保護層を形成するステップと、
前記III族窒化物半導体層の一部を露出するように前記保護層を貫通するビアホールを形成するステップと、
前記保護層上に、前記ビアホールの幅より大きい幅を有する上部を含み、かつ該ビアホールの中に延びる下部を有するマスキングゲートを形成するステップと、
前記マスキングゲートを注入マスクとして用いて、前記III族窒化物半導体層にソース/ドレイン領域を注入するステップと、
を含むことを特徴とする方法。 - 前記マスキングゲートを除去するステップと、
前記ビアホール内にゲート・コンタクトを形成するステップと
をさらに含むことを特徴とする請求項1に記載の方法。 - 前記保護層が、第1の保護層を含み、前記方法が、
前記ソース/ドレイン領域を注入した後で、前記第1の保護層及び前記マスキングゲート上に第2の保護層を形成するステップと、
前記マスキングゲートを露出するように前記第2の保護層をエッチングするステップと
をさらに含み、前記マスキングゲートを除去するステップが、前記第2の保護層をエッチングした後で該マスキングゲートを除去し、該第2の保護層内にアパーチャを形成するステップを含むことを特徴とする請求項2に記載の方法。 - 前記マスキングゲートを除去した後、前記ビアホールの中、及び前記第2の保護層内の前記アパーチャの中に導電性材料を堆積するステップと、
ゲート・コンタクトを形成するように前記導電性材料をパターン形成するステップと
をさらに含み、
前記ゲート・コンタクトの一部が、前記保護層を横切って横方向に延びることを特徴とする請求項3に記載の方法。 - 前記ゲート・コンタクトの第2の部分が、前記第2の保護層内の前記アパーチャを越えて該第2の保護層を横切って横方向に延びることを特徴とする請求項4に記載の方法。
- 前記ゲート・コンタクト上に金属被覆層を形成するステップをさらに含むことを特徴とする請求項2に記載の方法。
- 前記マスキングゲートの外縁から前記ビアホールの縁までの横方向の距離が、約100nmから約300nmまでであることを特徴とする請求項1に記載の方法。
- 前記ビアホールが、約100nmの幅を有することを特徴とする請求項1に記載の方法。
- 前記マスキングゲートを形成するステップが、
前記保護層上に第1のレジスト層を形成するステップと、
前記第1のレジスト層上に、該第1のレジスト層が第2のレジスト層と前記保護層との間に存在するように第2のレジスト層を形成するステップと、
前記第1のレジスト層及び前記第2のレジスト層を、該第1のレジスト層内に第1のアパーチャが、該第2のレジスト層内に第2のアパーチャがそれぞれ形成され、前記第1のアパーチャが前記第2のアパーチャと前記保護層との間に存在し、かつ該第1のアパーチャが該第2のアパーチャより大きい幅を有するように、パターン形成するステップと
を含み、
前記ビアホールを形成するステップが、前記第2のレジスト層をエッチングマスクとして用いて、前記保護層をエッチングするステップを含む
ことを特徴とする請求項1に記載の方法。 - 前記マスキングゲートを形成するステップが、前記第1のアパーチャ及び前記ビアホール内にマスキング材料を堆積するステップを含み、前記マスキング材料は、前記保護層及び前記III族窒化物層に対してエッチング選択性を有することを特徴とする請求項9に記載の方法。
- 前記第1のアパーチャ及び前記ビアホール内に前記マスキング材料を堆積するステップが、該第1のアパーチャ及び該ビアホール内に窒化アルミニウムを堆積するステップを含むことを特徴とする請求項10に記載の方法。
- 前記第1のレジスト及び前記第2のレジストが、異なる現像剤感度を有する電子ビームレジストを含み、前記第1のレジスト層及び前記第2のレジスト層をパターン形成するステップが、該第1のレジスト層及び該第2のレジスト層を電子ビームに露光させ、異なる現像剤を用いて、該第1のレジスト層及び該第2のレジスト層を現像するステップを含むことを特徴とする請求項9に記載の方法。
- 前記マスキングゲートをそのままの状態にして、前記注入されたソース/ドレイン領域をアニールするステップをさらに含み、前記マスキングゲートは、該注入されたソース/ドレイン領域をアニールした後で除去されることを特徴とする請求項1に記載の方法。
- 前記ソース/ドレイン領域をアニールした後で、前記マスキングゲートを除去する前に、前記保護層を除去するステップと、
前記マスキングゲートを除去する前に、前記III族窒化物層及び前記マスキングゲート上に第2の保護層を形成するステップと
をさらに含むことを特徴とする請求項13に記載の方法。 - 前記マスキングゲートを形成する前に、前記第2のアパーチャの幅を拡げるステップ
をさらに含み、前記マスキングゲートの幅は、前記第2のアパーチャの拡げられた幅により定められることを特徴とする請求項9に記載の方法。 - 前記第2のアパーチャの幅を拡げるステップが、前記第2のレジスト層をアッシングするステップを含むことを特徴とする請求項15に記載の方法。
- 前記マスキングゲートが、高融点金属、窒化アルミニウム、多結晶シリコン及び/又は金属シリサイドを含むことを特徴とする請求項1に記載の方法。
- 前記保護層が、窒化シリコンを含むことを特徴とする請求項1に記載の方法。
- 前記マスキングゲートの前記上部の外縁から前記ビアホールの縁までの横方向距離が、約300nm未満であることを特徴とする請求項1に記載の方法。
- III族窒化物ベースの半導体デバイスであって、
III族窒化物の半導体層と、
前記III族窒化物の半導体層内の離間されたソース及びドレイン領域と、
前記III族窒化物半導体層を露出させるビアホールが貫通した、前記III族窒化物半導体層上の保護層と、
前記ビアホール内のゲート・コンタクトと
を含み、
前記ソース領域及び前記ドレイン領域の少なくとも一方の縁が、前記ゲート・コンタクトの縁から約300nm又はそれ未満の範囲内に配置されることを特徴とするデバイス。 - 前記ソース領域及び前記ドレイン領域の少なくとも一方の縁が、前記ゲート・コンタクトの縁から約100nmから300nm以内に配置されることを特徴とする請求項20に記載のデバイス。
- 前記保護層上に第2の保護層をさらに含み、前記第2の保護層は、該保護層を貫通する、前記ビアホールと位置合わせされたアパーチャを含み、
前記ゲート・コンタクトが、前記アパーチャ内にあり、かつ前記第2の保護層の一部を横切って横方向に延びていることを特徴とする請求項19に記載のデバイス。
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JP2016062936A (ja) * | 2014-09-16 | 2016-04-25 | 株式会社東芝 | 半導体装置の製造方法 |
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JP5767637B2 (ja) | 2015-08-19 |
DE112010003087B4 (de) | 2018-07-26 |
US20110018040A1 (en) | 2011-01-27 |
DE112010003087T5 (de) | 2012-12-20 |
WO2011016940A3 (en) | 2011-05-19 |
US8105889B2 (en) | 2012-01-31 |
WO2011016940A2 (en) | 2011-02-10 |
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