JP2019125802A - ガリウム窒化物電界効果トランジスタ - Google Patents
ガリウム窒化物電界効果トランジスタ Download PDFInfo
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- JP2019125802A JP2019125802A JP2019044822A JP2019044822A JP2019125802A JP 2019125802 A JP2019125802 A JP 2019125802A JP 2019044822 A JP2019044822 A JP 2019044822A JP 2019044822 A JP2019044822 A JP 2019044822A JP 2019125802 A JP2019125802 A JP 2019125802A
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- 229910002601 GaN Inorganic materials 0.000 title abstract description 18
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title abstract description 10
- 230000005669 field effect Effects 0.000 title abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims abstract description 116
- 239000002184 metal Substances 0.000 claims abstract description 116
- 239000004065 semiconductor Substances 0.000 claims abstract description 55
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 52
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 52
- 239000010703 silicon Substances 0.000 claims abstract description 52
- 238000000034 method Methods 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 27
- 238000004544 sputter deposition Methods 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 12
- 238000000137 annealing Methods 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 claims description 4
- 230000005641 tunneling Effects 0.000 claims description 4
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- 238000002161 passivation Methods 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
- H01L29/4975—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2 being a silicide layer, e.g. TiSi2
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- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
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- Insulated Gate Type Field-Effect Transistor (AREA)
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Abstract
Description
Claims (20)
- 半導体デバイスであって、
基板であって、前記基板の頂部表面の上に配置される半導体層を有する、前記基板、
前記半導体層の上に配置され、シリコンを含む、ゲート誘電体層、
前記ゲート誘電体層の上に配置される金属ゲートであって、2原子パーセント〜10原子パーセントのシリコンを含む、前記金属ゲート、及び
前記金属ゲートに近接するソース及びドレインコンタクトホールに配置されるコンタクト金属、
を含む、半導体デバイス。 - 半導体デバイスであって、
基板であって、前記基板の頂部表面の上に配置されるIII−N半導体材料を含む半導体層を有する、前記基板、
前記半導体層の上に配置され、シリコンを含む、ゲート誘電体層、
前記ゲート誘電体層の上に配置される金属ゲートであって、2原子パーセント〜10原子パーセントのシリコンを含む、前記金属ゲート、及び
前記金属ゲートに近接して配置されるソース及びドレイントンネリングコンタクト、
を含み、
前記ソース及びドレイントンネリングコンタクトが、ソース及びドレインコンタクトホールに配置されるコンタクト金属を有し、前記ソース及びドレインコンタクトホールが、前記III−N半導体材料内に配置される二次元電子ガスへのトンネリング接続を成す、半導体デバイス。 - 請求項2に記載の半導体デバイスであって、
前記金属ゲートが4原子パーセント〜6原子パーセントのシリコンを含む、半導体デバイス。 - 請求項2に記載の半導体デバイスであって、
前記ゲート誘電体層がシリコン窒化物を含む、半導体デバイス。 - 請求項2に記載の半導体デバイスであって、
前記金属ゲートが少なくとも10パーセントのチタンを含む、半導体デバイス。 - 請求項2に記載の半導体デバイスであって、
前記金属ゲートがチタンタングステンを含む、半導体デバイス。 - 請求項2に記載の半導体デバイスであって、
前記コンタクト金属が、前記半導体層に接するチタン層を含む、半導体デバイス。 - 請求項7に記載の半導体デバイスであって、
前記コンタクト金属が、前記チタン層上に配置されるスパッタされたアルミニウム層を含む、半導体デバイス。 - 半導体デバイスを形成するプロセスであって、
基板を提供すること、
前記基板の頂部表面の上に半導体層を形成すること、
前記半導体層の上にゲート誘電体層を形成することであって、前記ゲート誘電体層がシリコンを含むこと、
前記ゲート誘電体層の上に金属ゲートを形成することであって、前記金属ゲートが2原子パーセント〜10原子パーセントのシリコンを含むこと、
続いて前記基板上にコンタクト金属を形成すること、及び 前記金属コンタクトを少なくとも750℃の温度で少なくとも30秒間アニーリングすること、
を含む、プロセス。 - 請求項9に記載のプロセスであって、
前記金属ゲートが4原子パーセント〜6原子パーセントのシリコンを含む、プロセス。 - 請求項9に記載のプロセスであって、
前記ゲート誘電体層がシリコン窒化物を含む、プロセス。 - 請求項9に記載のプロセスであって、
前記半導体層がIII−N半導体材料を含む、プロセス。 - 請求項9に記載のプロセスであって、
前記金属ゲートがチタンタングステンを含む、プロセス。 - 請求項9に記載のプロセスであって、
前記コンタクト金属が、前記半導体層に接するチタン層を含む、プロセス。 - 請求項14に記載のプロセスであって、
前記コンタクト金属が、前記チタン層上に配置されるスパッタされたアルミニウム層を含む、プロセス。 - 請求項9に記載のプロセスであって、
アニーリングすることが、前記コンタクト金属を少なくとも800℃の温度で少なくとも30秒間加熱することを含む、プロセス。 - 請求項9に記載のプロセスであって、
アニーリングすることが、前記コンタクト金属を少なくとも850℃の温度で少なくとも30秒間加熱することを含む、プロセス。 - 請求項9に記載のプロセスであって、
前記金属ゲートを形成することが、前記金属ターゲットに含まれるシリコンを有する金属ターゲットから金属ゲート層をスパッタリングすることを含む、プロセス。 - 請求項9に記載のプロセスであって、
前記金属ゲートを形成することが、不活性ガス及びシリコン種を含むスパッタリングガスを用いて、1原子パーセント未満のシリコンを有する金属ターゲットから金属ゲート層をスパッタリングすることを含む、プロセス。 - 請求項9に記載のプロセスであって、
前記金属ゲートを形成することが、金属ターゲット及び別個のシリコンターゲットから金属ゲート層をスパッタリングすることを含む、プロセス。
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US13/886,744 | 2013-05-03 | ||
US13/886,744 US8916427B2 (en) | 2013-05-03 | 2013-05-03 | FET dielectric reliability enhancement |
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EP (1) | EP2992557A4 (ja) |
JP (2) | JP6562559B2 (ja) |
CN (1) | CN105164810B (ja) |
WO (1) | WO2014179809A1 (ja) |
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US8916427B2 (en) * | 2013-05-03 | 2014-12-23 | Texas Instruments Incorporated | FET dielectric reliability enhancement |
US9941384B2 (en) | 2015-08-29 | 2018-04-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and method for fabricating the same |
JP2021120966A (ja) * | 2018-04-27 | 2021-08-19 | ソニーセミコンダクタソリューションズ株式会社 | スイッチングトランジスタ及び半導体モジュール |
Citations (8)
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JP2007053185A (ja) * | 2005-08-17 | 2007-03-01 | Oki Electric Ind Co Ltd | オーミック電極、オーミック電極の製造方法、電界効果型トランジスタ、電界効果型トランジスタの製造方法、および、半導体装置 |
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CN105164810A (zh) | 2015-12-16 |
US20140327047A1 (en) | 2014-11-06 |
JP2016522991A (ja) | 2016-08-04 |
US9112011B2 (en) | 2015-08-18 |
WO2014179809A1 (en) | 2014-11-06 |
JP7000641B2 (ja) | 2022-01-19 |
EP2992557A1 (en) | 2016-03-09 |
CN105164810B (zh) | 2019-01-01 |
US8916427B2 (en) | 2014-12-23 |
JP6562559B2 (ja) | 2019-08-21 |
EP2992557A4 (en) | 2017-07-12 |
US20150060949A1 (en) | 2015-03-05 |
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