JP2013500581A5 - - Google Patents
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- Publication number
- JP2013500581A5 JP2013500581A5 JP2012521046A JP2012521046A JP2013500581A5 JP 2013500581 A5 JP2013500581 A5 JP 2013500581A5 JP 2012521046 A JP2012521046 A JP 2012521046A JP 2012521046 A JP2012521046 A JP 2012521046A JP 2013500581 A5 JP2013500581 A5 JP 2013500581A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- boundary region
- type conductive
- component
- conductive layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102009034588 | 2009-07-24 | ||
| DE102009034588.4 | 2009-07-24 | ||
| DE102009040438A DE102009040438A1 (de) | 2009-07-24 | 2009-09-07 | Optoelektronischer Halbleiterkörper mit einer Quantentopfstruktur |
| DE102009040438.4 | 2009-09-07 | ||
| PCT/EP2010/060658 WO2011009923A1 (de) | 2009-07-24 | 2010-07-22 | Optoelektronischer halbleiterkörper mit einer quantentopfstruktur |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013500581A JP2013500581A (ja) | 2013-01-07 |
| JP2013500581A5 true JP2013500581A5 (enExample) | 2013-08-15 |
| JP5745514B2 JP5745514B2 (ja) | 2015-07-08 |
Family
ID=43384046
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012521046A Expired - Fee Related JP5745514B2 (ja) | 2009-07-24 | 2010-07-22 | 量子井戸構造を有するオプトエレクトロニクス半導体ボディ |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20120298951A1 (enExample) |
| EP (1) | EP2457296B1 (enExample) |
| JP (1) | JP5745514B2 (enExample) |
| KR (2) | KR20170113686A (enExample) |
| CN (1) | CN102498626B (enExample) |
| DE (1) | DE102009040438A1 (enExample) |
| TW (1) | TWI440216B (enExample) |
| WO (1) | WO2011009923A1 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102014111058A1 (de) * | 2014-08-04 | 2016-02-04 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5276698A (en) * | 1990-09-20 | 1994-01-04 | Sumitomo Electric Ind., Ltd. | Semiconductor laser having an optical waveguide layer including an AlGaInP active layer |
| US5828684A (en) * | 1995-12-29 | 1998-10-27 | Xerox Corporation | Dual polarization quantum well laser in the 200 to 600 nanometers range |
| US6319742B1 (en) * | 1998-07-29 | 2001-11-20 | Sanyo Electric Co., Ltd. | Method of forming nitride based semiconductor layer |
| JP2001102690A (ja) * | 1999-09-29 | 2001-04-13 | Toshiba Corp | 窒化物系半導体レーザ装置 |
| JP3453558B2 (ja) * | 2000-12-25 | 2003-10-06 | 松下電器産業株式会社 | 窒化物半導体素子 |
| US7058105B2 (en) * | 2002-10-17 | 2006-06-06 | Samsung Electro-Mechanics Co., Ltd. | Semiconductor optoelectronic device |
| KR100525545B1 (ko) * | 2003-06-25 | 2005-10-31 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
| JP3857295B2 (ja) * | 2004-11-10 | 2006-12-13 | 三菱電機株式会社 | 半導体発光素子 |
| JP2006324280A (ja) * | 2005-05-17 | 2006-11-30 | Rohm Co Ltd | 半導体発光素子 |
| JP2007019399A (ja) * | 2005-07-11 | 2007-01-25 | Toshiba Corp | 半導体レーザ装置 |
| JP2007080896A (ja) * | 2005-09-12 | 2007-03-29 | Sanyo Electric Co Ltd | 半導体素子 |
| JP4341702B2 (ja) * | 2007-06-21 | 2009-10-07 | 住友電気工業株式会社 | Ｉｉｉ族窒化物系半導体発光素子 |
| JP2009049416A (ja) * | 2007-08-20 | 2009-03-05 | Samsung Electro-Mechanics Co Ltd | 窒化物半導体発光素子 |
| JP2009054782A (ja) * | 2007-08-27 | 2009-03-12 | Institute Of Physical & Chemical Research | 光半導体素子及びその製造方法 |
| DE102007044439B4 (de) * | 2007-09-18 | 2022-03-24 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterchip mit Quantentopfstruktur |
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2009
- 2009-09-07 DE DE102009040438A patent/DE102009040438A1/de not_active Ceased
-
2010
- 2010-07-14 TW TW099123097A patent/TWI440216B/zh not_active IP Right Cessation
- 2010-07-22 WO PCT/EP2010/060658 patent/WO2011009923A1/de not_active Ceased
- 2010-07-22 US US13/386,861 patent/US20120298951A1/en not_active Abandoned
- 2010-07-22 KR KR1020177026723A patent/KR20170113686A/ko not_active Ceased
- 2010-07-22 JP JP2012521046A patent/JP5745514B2/ja not_active Expired - Fee Related
- 2010-07-22 KR KR1020127004670A patent/KR101782954B1/ko active Active
- 2010-07-22 EP EP10735290.8A patent/EP2457296B1/de active Active
- 2010-07-22 CN CN201080042606.1A patent/CN102498626B/zh active Active