CN102498626B - 具有量子阱结构的光电子半导体本体 - Google Patents

具有量子阱结构的光电子半导体本体 Download PDF

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Publication number
CN102498626B
CN102498626B CN201080042606.1A CN201080042606A CN102498626B CN 102498626 B CN102498626 B CN 102498626B CN 201080042606 A CN201080042606 A CN 201080042606A CN 102498626 B CN102498626 B CN 102498626B
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China
Prior art keywords
layer
quantum well
semiconductor body
component
conducting
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Chinese (zh)
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CN102498626A (zh
Inventor
M·彼得
R·布滕戴希
泷哲也
J·奥夫
A·瓦尔特
T·迈耶
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
    • H01S5/3063—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping using Mg
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3213—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities asymmetric clading layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/347—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIBVI compounds, e.g. ZnCdSe- laser
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3215—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities graded composition cladding layers

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Led Devices (AREA)
  • Photovoltaic Devices (AREA)
CN201080042606.1A 2009-07-24 2010-07-22 具有量子阱结构的光电子半导体本体 Active CN102498626B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102009034588 2009-07-24
DE102009034588.4 2009-07-24
DE102009040438A DE102009040438A1 (de) 2009-07-24 2009-09-07 Optoelektronischer Halbleiterkörper mit einer Quantentopfstruktur
DE102009040438.4 2009-09-07
PCT/EP2010/060658 WO2011009923A1 (de) 2009-07-24 2010-07-22 Optoelektronischer halbleiterkörper mit einer quantentopfstruktur

Publications (2)

Publication Number Publication Date
CN102498626A CN102498626A (zh) 2012-06-13
CN102498626B true CN102498626B (zh) 2015-03-25

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CN201080042606.1A Active CN102498626B (zh) 2009-07-24 2010-07-22 具有量子阱结构的光电子半导体本体

Country Status (8)

Country Link
US (1) US20120298951A1 (enExample)
EP (1) EP2457296B1 (enExample)
JP (1) JP5745514B2 (enExample)
KR (2) KR20170113686A (enExample)
CN (1) CN102498626B (enExample)
DE (1) DE102009040438A1 (enExample)
TW (1) TWI440216B (enExample)
WO (1) WO2011009923A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014111058A1 (de) * 2014-08-04 2016-02-04 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6319742B1 (en) * 1998-07-29 2001-11-20 Sanyo Electric Co., Ltd. Method of forming nitride based semiconductor layer
US20060081831A1 (en) * 2003-06-25 2006-04-20 Lee Suk H Light emitting device using nitride semiconductor and fabrication method of the same
US20070057337A1 (en) * 2005-09-12 2007-03-15 Sanyo Electric Co., Ltd. Semiconductor device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5276698A (en) * 1990-09-20 1994-01-04 Sumitomo Electric Ind., Ltd. Semiconductor laser having an optical waveguide layer including an AlGaInP active layer
US5828684A (en) * 1995-12-29 1998-10-27 Xerox Corporation Dual polarization quantum well laser in the 200 to 600 nanometers range
JP2001102690A (ja) * 1999-09-29 2001-04-13 Toshiba Corp 窒化物系半導体レーザ装置
JP3453558B2 (ja) * 2000-12-25 2003-10-06 松下電器産業株式会社 窒化物半導体素子
US7058105B2 (en) * 2002-10-17 2006-06-06 Samsung Electro-Mechanics Co., Ltd. Semiconductor optoelectronic device
JP3857295B2 (ja) * 2004-11-10 2006-12-13 三菱電機株式会社 半導体発光素子
JP2006324280A (ja) * 2005-05-17 2006-11-30 Rohm Co Ltd 半導体発光素子
JP2007019399A (ja) * 2005-07-11 2007-01-25 Toshiba Corp 半導体レーザ装置
JP4341702B2 (ja) * 2007-06-21 2009-10-07 住友電気工業株式会社 Ｉｉｉ族窒化物系半導体発光素子
JP2009049416A (ja) * 2007-08-20 2009-03-05 Samsung Electro-Mechanics Co Ltd 窒化物半導体発光素子
JP2009054782A (ja) * 2007-08-27 2009-03-12 Institute Of Physical & Chemical Research 光半導体素子及びその製造方法
DE102007044439B4 (de) * 2007-09-18 2022-03-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip mit Quantentopfstruktur

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6319742B1 (en) * 1998-07-29 2001-11-20 Sanyo Electric Co., Ltd. Method of forming nitride based semiconductor layer
US20060081831A1 (en) * 2003-06-25 2006-04-20 Lee Suk H Light emitting device using nitride semiconductor and fabrication method of the same
US20070057337A1 (en) * 2005-09-12 2007-03-15 Sanyo Electric Co., Ltd. Semiconductor device

Also Published As

Publication number Publication date
KR20120038006A (ko) 2012-04-20
US20120298951A1 (en) 2012-11-29
KR20170113686A (ko) 2017-10-12
JP5745514B2 (ja) 2015-07-08
JP2013500581A (ja) 2013-01-07
CN102498626A (zh) 2012-06-13
WO2011009923A1 (de) 2011-01-27
EP2457296A1 (de) 2012-05-30
TW201115785A (en) 2011-05-01
DE102009040438A1 (de) 2011-01-27
KR101782954B1 (ko) 2017-09-28
TWI440216B (zh) 2014-06-01
EP2457296B1 (de) 2019-11-06

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