JP5745514B2 - 量子井戸構造を有するオプトエレクトロニクス半導体ボディ - Google Patents

量子井戸構造を有するオプトエレクトロニクス半導体ボディ Download PDF

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JP5745514B2
JP5745514B2 JP2012521046A JP2012521046A JP5745514B2 JP 5745514 B2 JP5745514 B2 JP 5745514B2 JP 2012521046 A JP2012521046 A JP 2012521046A JP 2012521046 A JP2012521046 A JP 2012521046A JP 5745514 B2 JP5745514 B2 JP 5745514B2
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quantum well
type conductive
side termination
component
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JP2013500581A (ja
JP2013500581A5 (enExample
Inventor
マティアス ペーター
マティアス ペーター
レイナー バーテンダイヒ
レイナー バーテンダイヒ
瀧　哲也
瀧　　哲也
ユルゲン オフ
ユルゲン オフ
アレキサンダー ワルター
アレキサンダー ワルター
トビアス マイヤー
トビアス マイヤー
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3213—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities asymmetric clading layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3215—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities graded composition cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/347—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIBVI compounds, e.g. ZnCdSe- laser
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
    • H01S5/3063—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping using Mg

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Led Devices (AREA)
  • Photovoltaic Devices (AREA)
JP2012521046A 2009-07-24 2010-07-22 量子井戸構造を有するオプトエレクトロニクス半導体ボディ Expired - Fee Related JP5745514B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102009034588 2009-07-24
DE102009034588.4 2009-07-24
DE102009040438A DE102009040438A1 (de) 2009-07-24 2009-09-07 Optoelektronischer Halbleiterkörper mit einer Quantentopfstruktur
DE102009040438.4 2009-09-07
PCT/EP2010/060658 WO2011009923A1 (de) 2009-07-24 2010-07-22 Optoelektronischer halbleiterkörper mit einer quantentopfstruktur

Publications (3)

Publication Number Publication Date
JP2013500581A JP2013500581A (ja) 2013-01-07
JP2013500581A5 JP2013500581A5 (enExample) 2013-08-15
JP5745514B2 true JP5745514B2 (ja) 2015-07-08

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JP2012521046A Expired - Fee Related JP5745514B2 (ja) 2009-07-24 2010-07-22 量子井戸構造を有するオプトエレクトロニクス半導体ボディ

Country Status (8)

Country Link
US (1) US20120298951A1 (enExample)
EP (1) EP2457296B1 (enExample)
JP (1) JP5745514B2 (enExample)
KR (2) KR20170113686A (enExample)
CN (1) CN102498626B (enExample)
DE (1) DE102009040438A1 (enExample)
TW (1) TWI440216B (enExample)
WO (1) WO2011009923A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014111058A1 (de) * 2014-08-04 2016-02-04 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5276698A (en) * 1990-09-20 1994-01-04 Sumitomo Electric Ind., Ltd. Semiconductor laser having an optical waveguide layer including an AlGaInP active layer
US5828684A (en) * 1995-12-29 1998-10-27 Xerox Corporation Dual polarization quantum well laser in the 200 to 600 nanometers range
US6319742B1 (en) * 1998-07-29 2001-11-20 Sanyo Electric Co., Ltd. Method of forming nitride based semiconductor layer
JP2001102690A (ja) * 1999-09-29 2001-04-13 Toshiba Corp 窒化物系半導体レーザ装置
JP3453558B2 (ja) * 2000-12-25 2003-10-06 松下電器産業株式会社 窒化物半導体素子
US7058105B2 (en) * 2002-10-17 2006-06-06 Samsung Electro-Mechanics Co., Ltd. Semiconductor optoelectronic device
KR100525545B1 (ko) * 2003-06-25 2005-10-31 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
JP3857295B2 (ja) * 2004-11-10 2006-12-13 三菱電機株式会社 半導体発光素子
JP2006324280A (ja) * 2005-05-17 2006-11-30 Rohm Co Ltd 半導体発光素子
JP2007019399A (ja) * 2005-07-11 2007-01-25 Toshiba Corp 半導体レーザ装置
JP2007080896A (ja) * 2005-09-12 2007-03-29 Sanyo Electric Co Ltd 半導体素子
JP4341702B2 (ja) * 2007-06-21 2009-10-07 住友電気工業株式会社 Ｉｉｉ族窒化物系半導体発光素子
JP2009049416A (ja) * 2007-08-20 2009-03-05 Samsung Electro-Mechanics Co Ltd 窒化物半導体発光素子
JP2009054782A (ja) * 2007-08-27 2009-03-12 Institute Of Physical & Chemical Research 光半導体素子及びその製造方法
DE102007044439B4 (de) * 2007-09-18 2022-03-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip mit Quantentopfstruktur

Also Published As

Publication number Publication date
KR20120038006A (ko) 2012-04-20
US20120298951A1 (en) 2012-11-29
CN102498626B (zh) 2015-03-25
KR20170113686A (ko) 2017-10-12
JP2013500581A (ja) 2013-01-07
CN102498626A (zh) 2012-06-13
WO2011009923A1 (de) 2011-01-27
EP2457296A1 (de) 2012-05-30
TW201115785A (en) 2011-05-01
DE102009040438A1 (de) 2011-01-27
KR101782954B1 (ko) 2017-09-28
TWI440216B (zh) 2014-06-01
EP2457296B1 (de) 2019-11-06

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