JP2013254764A - 量子カスケードレーザ - Google Patents
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- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
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- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
- H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
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- H01S5/0071—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for beam steering, e.g. using a mirror outside the cavity to change the beam direction
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
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- H01S5/0282—Passivation layers or treatments
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
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Abstract
【解決手段】 半導体基板10と、基板10上に設けられ、量子井戸発光層及び注入層からなる単位積層体16が多段に積層されることで発光層と注入層とが交互に積層されたカスケード構造を有し、量子井戸構造でのサブバンド間遷移によって光を生成する活性層15とを備えて量子カスケードレーザ1Aを構成する。また、活性層15で生成される所定波長の光に対するレーザ共振器構造において、互いに対向する第1端面11及び第2端面12に、少なくとも1層のCeO2膜を含む反射制御膜20、30を形成する。
【選択図】 図1
Description
ここで、rp、rsは入射面での偏光(p偏光、s偏光)に対する測定試料の反射係数である。分光エリプソメトリーは、この複素比ρを波長の関数として測定する。
ここで、φは光の入射角である。入射角を変えて何点か(例えば3点)の測定を行い、入射角の変化によって光路長が変わっても同時に関係式を満足するようにフィッティングを行うことにより、膜厚に依存することなく、測定試料の屈折率n、消衰係数kを精度良く求めることができる。
nd=qλ/4 (q=1,3,5,…)
n=(n0nm)1/2
となる。この2式はそれぞれ、波長と膜厚の関係、及び屈折率の関係を示している。
1C〜1E…量子カスケードレーザ、20c…反射防止膜、30c…高反射膜、20d…反射防止膜、30d…反射防止膜、20e…反射防止膜、30e…高反射膜、31e…絶縁膜、61…回折格子ミラー、62…反射ミラー、71…下部クラッド層、72…下部ガイド層、73…上部ガイド層、74…上部クラッド層、75…回折格子構造、
50…InP基板、51…InP下部クラッド層、52…InGaAs下部ガイド層、53…InGaAs上部ガイド層、54…InP上部クラッド層、55…InGaAsコンタクト層。
Claims (7)
- 半導体基板と、
前記半導体基板上に設けられ、量子井戸発光層及び注入層からなる単位積層体が多段に積層されることで前記量子井戸発光層と前記注入層とが交互に積層されたカスケード構造を有し、量子井戸構造でのサブバンド間遷移によって光を生成する活性層とを備え、
前記活性層で生成される所定波長の光に対するレーザ共振器構造において、互いに対向する第1端面及び第2端面の少なくとも一方に、少なくとも1層のCeO2膜を含む反射制御膜が形成されていることを特徴とする量子カスケードレーザ。 - 前記反射制御膜は、低屈折率膜である前記CeO2膜と、高屈折率膜とが積層された多層膜であることを特徴とする請求項1記載の量子カスケードレーザ。
- 前記多層膜における前記高屈折率膜は、Ge膜であることを特徴とする請求項2記載の量子カスケードレーザ。
- 前記反射制御膜は、単一の前記CeO2膜から構成されていることを特徴とする請求項1記載の量子カスケードレーザ。
- 前記反射制御膜は、前記所定波長の光に対する反射防止膜、または前記所定波長の光を所定の反射率で反射する反射膜であることを特徴とする請求項1〜4のいずれか一項記載の量子カスケードレーザ。
- 前記レーザ共振器構造は、前記第1端面に第1反射制御膜として前記反射防止膜が形成され、前記第2端面に第2反射制御膜として前記反射膜が形成されて、外部共振器型に構成されていることを特徴とする請求項5記載の量子カスケードレーザ。
- 前記レーザ共振器構造は、前記第1端面に第1反射制御膜として前記反射防止膜が形成され、前記第2端面に第2反射制御膜として前記反射防止膜が形成されて、分布帰還型に構成されていることを特徴とする請求項5記載の量子カスケードレーザ。
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JP2012127676A JP2013254764A (ja) | 2012-06-05 | 2012-06-05 | 量子カスケードレーザ |
US13/909,611 US9246309B2 (en) | 2012-06-05 | 2013-06-04 | Quantum cascade laser |
DE102013210438.3A DE102013210438B4 (de) | 2012-06-05 | 2013-06-05 | Quantenkaskadenlaser |
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Cited By (3)
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JP2015125280A (ja) * | 2013-12-26 | 2015-07-06 | ウシオ電機株式会社 | グリッド偏光素子、紫外線偏光光照射方法、紫外線偏光光照射装置、光配向層付き基板の製造方法及び光配向装置 |
WO2017179243A1 (ja) * | 2016-04-12 | 2017-10-19 | 新日鐵住金株式会社 | 被検査体撮像装置、被検査体撮像方法、表面検査装置及び表面検査方法 |
DE112021002102T5 (de) | 2020-04-02 | 2023-02-09 | Hamamatsu Photonics K.K. | Quantenkaskadenlaserelement, Quantenkaskadenlaservorrichtung und Verfahren zur Fertigung der Quantenkaskadenlaservorrichtung |
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US20210057875A1 (en) * | 2019-08-21 | 2021-02-25 | Hamamatsu Photonics K.K. | Sintered body, sputtering target, film, quantum cascade laser, and method of film formation |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015125280A (ja) * | 2013-12-26 | 2015-07-06 | ウシオ電機株式会社 | グリッド偏光素子、紫外線偏光光照射方法、紫外線偏光光照射装置、光配向層付き基板の製造方法及び光配向装置 |
WO2017179243A1 (ja) * | 2016-04-12 | 2017-10-19 | 新日鐵住金株式会社 | 被検査体撮像装置、被検査体撮像方法、表面検査装置及び表面検査方法 |
KR20170129949A (ko) * | 2016-04-12 | 2017-11-27 | 신닛테츠스미킨 카부시키카이샤 | 피검사체 촬상 장치, 피검사체 촬상 방법, 표면 검사 장치 및 표면 검사 방법 |
JPWO2017179243A1 (ja) * | 2016-04-12 | 2018-04-19 | 新日鐵住金株式会社 | 被検査体撮像装置、被検査体撮像方法、表面検査装置及び表面検査方法 |
US10281408B2 (en) | 2016-04-12 | 2019-05-07 | Nippon Steel & Sumitomo Metal Corporation | Inspection object imaging apparatus, inspection object imaging method, surface inspection apparatus, and surface inspection method |
KR101992042B1 (ko) | 2016-04-12 | 2019-06-21 | 닛폰세이테츠 가부시키가이샤 | 피검사체 촬상 장치, 피검사체 촬상 방법, 표면 검사 장치 및 표면 검사 방법 |
DE112021002102T5 (de) | 2020-04-02 | 2023-02-09 | Hamamatsu Photonics K.K. | Quantenkaskadenlaserelement, Quantenkaskadenlaservorrichtung und Verfahren zur Fertigung der Quantenkaskadenlaservorrichtung |
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