JP6134989B2 - 連鎖段構成活性コアをもつ中赤外多波長連鎖構成分布帰還型レーザ - Google Patents
連鎖段構成活性コアをもつ中赤外多波長連鎖構成分布帰還型レーザ Download PDFInfo
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- JP6134989B2 JP6134989B2 JP2014552313A JP2014552313A JP6134989B2 JP 6134989 B2 JP6134989 B2 JP 6134989B2 JP 2014552313 A JP2014552313 A JP 2014552313A JP 2014552313 A JP2014552313 A JP 2014552313A JP 6134989 B2 JP6134989 B2 JP 6134989B2
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3425—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising couples wells or superlattices
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- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
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- G01N21/47—Scattering, i.e. diffuse reflection
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- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06256—Controlling the frequency of the radiation with DBR-structure
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1092—Multi-wavelength lasing
- H01S5/1096—Multi-wavelength lasing in a single cavity
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- G—PHYSICS
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
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- G01N2201/0612—Laser diodes
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0287—Facet reflectivity
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
- H01S5/1215—Multiplicity of periods
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
- H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
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Description
図7に示されるスペクトルはコアが3つの活性スタックでつくられているcDFB型レーザによって得られた。(a)と示されているコアによるエレクトロルミネセンススペクトルは利得スペクトルを示す。曲線(b),(c),(d)及び(e)と示されている4つのレーザ発振スペクトルは同じウエハで作製された4つの異なるレーザ区画からのレーザ発振スペクトルである。
cDFBの第2のレーザ区画のパルス光−電流曲線(図8)も、第1の(すなわち、前面ファセットの隣の)レーザ区画のDCバイアスの関数として測定した。示されているバイアスは、11V(黒色の密破線;---)、10V(黒色の粗破線;- - -)、9V(灰色の実線;−)、8V(灰色の長破線;―――)、4V(灰色の点線;・・・)及び0V(黒色の実線;−)である。第2のレーザ区画からの出力パワーはDCバイアスを高めるにともなって、第1のレーザ区画のキャビティによる光損失の減少のため、高くなる。DCバイアスの電力消費は、電流が9Vにおいて0.12Aより小さいため、低く(〜0.1W)抑えることができる。電力消費はパルスバイアスを用いることでさらに低減することができる。
パルス内の、及び同じレーザ区画に印加される隣り合うパルスからの、加熱を最小限に抑えるため、発明者等は図9に示されるような以下の時間シーケンス動作及び、コア温度上昇を20℃未満に保つため、数100ns以下のオーダー、例えば200nsのパルス幅を提案する。図9に示される時間シーケンス動作中、その前にあるレーザ区画にわたって連鎖しているいずれのレーザ区画からの出力の光損失も最小限に抑えるため、レーザ区画は、レーザ発振モードにある必要がないときには、閾値より下にDCまたはパルスでバイアスされるべきである。これにより、リ(Li)等、IEEE Journal of Quantum Electronics,2000年,第36巻,第10号,p.1110〜1116に触れられているように、レーザ発振していないレーザ段による帰還が最小限に抑えられるであろう。
Claims (7)
- レーザにおいて、
a.超格子を形成する、組成が同じではない少なくとも2つの層を含む、利得材料であって、サブバンド間遷移により光子を発生する利得材料、
b.反射防止材料で被覆された2つの端面を有する光導波路、及び
c.直列に配置された少なくとも2つのレーザ発振区画であって、それぞれが、等しくない周期すなわち等しくないブラッグ波長を有する1/4波長シフト回折格子を有し、電気絶縁分離領域により分離される少なくとも2つのレーザ発振区画、
を有することを特徴とするレーザ。 - 前記レーザ発振区画が、n型クラッド層内のp型層を含む電気絶縁分離領域によるか、またはn型クラッド層の高ドープ部の除去により、分離されることを特徴とする請求項1に記載のレーザ。
- 前記レーザ発振区画の少なくとも1つからの発光波長が約2.5μmから約15μmであることを特徴とする請求項1に記載のレーザ。
- 前記超格子の少なくとも1つの層が、xが0から1である、GaxIn1−xAs、またはyが0から1である、AlyIn1−yAsを含むことを特徴とする請求項1に記載のレーザ。
- 前記レーザ発振区画がパルスモードでレーザ発振し、レーザパルスの幅が約10nsから約1msであることを特徴とする請求項1に記載のレーザ。
- サンプルからの信号出力を検出する方法において、
a.請求項1に記載のレーザからの少なくとも1つのレーザ光照射を前記サンプルに与える工程、及び
b.前記光が前記サンプルと相互作用した後に前記光の少なくともいくらかを収集する工程、
を含むことを特徴とする方法。 - 前記光を収集する前記工程が前記サンプルの赤外吸光度に関する情報を与えることを特徴とする請求項6に記載の方法。
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US201261586327P | 2012-01-13 | 2012-01-13 | |
US61/586,327 | 2012-01-13 | ||
PCT/US2013/021102 WO2013106619A1 (en) | 2012-01-13 | 2013-01-11 | Mid-ir multiwavelength concatenated distributed-feedback laser with an active core made of cascaded stages |
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JP2015503857A JP2015503857A (ja) | 2015-02-02 |
JP6134989B2 true JP6134989B2 (ja) | 2017-05-31 |
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US (1) | US9455551B2 (ja) |
EP (1) | EP2803122B1 (ja) |
JP (1) | JP6134989B2 (ja) |
KR (1) | KR20140112071A (ja) |
CN (1) | CN104205531B (ja) |
TW (1) | TW201334335A (ja) |
WO (1) | WO2013106619A1 (ja) |
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CN103746288B (zh) * | 2013-12-23 | 2017-07-14 | 南京大学 | 基于叠印啁啾结构的dfb半导体激光器及激光器阵列 |
US9531155B2 (en) * | 2014-04-09 | 2016-12-27 | Applied Optoelectronics, Inc. | Switched radio frequency (RF) driver for tunable laser with multiple in-line sections |
EP2940808B1 (en) | 2014-05-02 | 2019-11-27 | EMPA Eidgenössische Materialprüfungs- und Forschungsanstalt | Time-multiplexed driving of multi-colour lasers for quasi-simultaneous spectroscopic analysis |
CN105846312A (zh) * | 2015-01-12 | 2016-08-10 | 南京大学(苏州)高新技术研究院 | 一种单片集成两段式dfb半导体激光器及阵列 |
TWI696822B (zh) | 2015-10-05 | 2020-06-21 | 財團法人工業技術研究院 | 載子濃度的量測方法及其設備 |
WO2017123309A2 (en) * | 2016-01-06 | 2017-07-20 | Northwestern University | Monolithical widely tunable quantum cascade laser devices |
CN105846304A (zh) * | 2016-04-24 | 2016-08-10 | 西南技术物理研究所 | 全固态高功率中长波激光光学参量放大器 |
DE102016116779A1 (de) * | 2016-09-07 | 2018-03-08 | Rofin-Sinar Laser Gmbh | Resonatorspiegel für einen optischen Resonator einer Laservorrichtung und Laservorrichtung |
JP2018046128A (ja) * | 2016-09-14 | 2018-03-22 | 株式会社東芝 | 量子カスケードレーザ装置 |
CN114825050B (zh) * | 2022-06-29 | 2023-02-03 | 日照市艾锐光电科技有限公司 | 一种级联多波长集成半导体激光器及其应用 |
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JPS63143788A (ja) * | 1986-12-05 | 1988-06-16 | 松下電器産業株式会社 | 高周波加熱装置 |
JPS63147388A (ja) * | 1986-12-10 | 1988-06-20 | Nec Corp | 半導体レ−ザ |
DE69027368T2 (de) * | 1989-06-30 | 1997-01-30 | Optical Measurement Technology | Halbleiterlaser und Verfahren zur Herstellung desselben |
SE507376C2 (sv) * | 1996-09-04 | 1998-05-18 | Ericsson Telefon Ab L M | Våglängdsavstämbar laseranordning |
JP2001015858A (ja) * | 1999-06-29 | 2001-01-19 | Nec Corp | 多波長半導体レーザ装置とその製造方法及び波長多重光伝送装置 |
WO2001013480A1 (en) * | 1999-08-13 | 2001-02-22 | Wisconsin Alumni Research Foundation | Single mode, single lobe surface emitting distributed feedback semiconductor laser |
JP2003174230A (ja) * | 2001-09-28 | 2003-06-20 | Furukawa Electric Co Ltd:The | 半導体レーザ装置、半導体レーザモジュールおよび半導体レーザモジュールを用いた光ファイバ増幅器 |
ATE361565T1 (de) * | 2002-03-08 | 2007-05-15 | Nanoplus Gmbh Nanosystems And | Ein halbleiterlaserarray mit seitlicher gratingstruktur |
US6760354B2 (en) * | 2002-03-12 | 2004-07-06 | Lucent Technologies Inc. | Intersubband light emitters with injection/relaxation regions doped to different levels |
US6608855B1 (en) * | 2002-05-31 | 2003-08-19 | Applied Optoelectronics, Inc. | Single-mode DBR laser with improved phase-shift section |
US6826223B1 (en) * | 2003-05-28 | 2004-11-30 | The United States Of America As Represented By The Secretary Of The Navy | Surface-emitting photonic crystal distributed feedback laser systems and methods |
US7301977B2 (en) * | 2004-06-10 | 2007-11-27 | Nanoplus Gmbh | Tuneable unipolar lasers |
US7554668B2 (en) * | 2005-09-06 | 2009-06-30 | Carl Zeiss Meditec, Inc. | Light source for swept source optical coherence tomography based on cascaded distributed feedback lasers with engineered band gaps |
KR100842288B1 (ko) * | 2006-12-08 | 2008-06-30 | 한국전자통신연구원 | 인터밴드 터널링 부밴드 천이 반도체 레이저 |
US20110255089A1 (en) * | 2010-04-14 | 2011-10-20 | Vikram Bhatia | Methods for Aligning Wavelength Converted Light Sources |
US8320418B2 (en) * | 2010-05-18 | 2012-11-27 | Corning Incorporated | Multiple wavelength optical systems |
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- 2013-01-11 EP EP13700830.6A patent/EP2803122B1/en active Active
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- 2013-01-11 WO PCT/US2013/021102 patent/WO2013106619A1/en active Application Filing
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EP2803122A1 (en) | 2014-11-19 |
CN104205531A (zh) | 2014-12-10 |
KR20140112071A (ko) | 2014-09-22 |
TW201334335A (zh) | 2013-08-16 |
CN104205531B (zh) | 2017-07-11 |
US9455551B2 (en) | 2016-09-27 |
WO2013106619A1 (en) | 2013-07-18 |
JP2015503857A (ja) | 2015-02-02 |
EP2803122B1 (en) | 2020-06-10 |
US20150008327A1 (en) | 2015-01-08 |
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