JP2013235987A - 発光装置、スーパールミネッセントダイオード、およびプロジェクター - Google Patents

発光装置、スーパールミネッセントダイオード、およびプロジェクター Download PDF

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Publication number
JP2013235987A
JP2013235987A JP2012107959A JP2012107959A JP2013235987A JP 2013235987 A JP2013235987 A JP 2013235987A JP 2012107959 A JP2012107959 A JP 2012107959A JP 2012107959 A JP2012107959 A JP 2012107959A JP 2013235987 A JP2013235987 A JP 2013235987A
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JP
Japan
Prior art keywords
light
gain
electrode
emitting device
active layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2012107959A
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English (en)
Japanese (ja)
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JP2013235987A5 (https=
Inventor
Masamitsu Mochizuki
理光 望月
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2012107959A priority Critical patent/JP2013235987A/ja
Priority to US13/886,696 priority patent/US8955987B2/en
Priority to CN2013101636471A priority patent/CN103390702A/zh
Publication of JP2013235987A publication Critical patent/JP2013235987A/ja
Priority to US14/591,527 priority patent/US9172003B2/en
Publication of JP2013235987A5 publication Critical patent/JP2013235987A5/ja
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00—Projectors or projection-type viewers; Accessories therefor
    • G03B21/14—Details
    • G03B21/20—Lamp housings
    • G03B21/2006—Lamp housings characterised by the light source
    • G03B21/2033—LED or laser light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/042—Superluminescent diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00—Projectors or projection-type viewers; Accessories therefor
    • G03B21/14—Details
    • G03B21/16—Cooling; Preventing overheating
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B33/00—Colour photography, other than mere exposure or projection of a colour film
    • G03B33/10—Simultaneous recording or projection
    • G03B33/12—Simultaneous recording or projection using beam-splitting or beam-combining systems, e.g. dichroic mirrors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B35/00—Stereoscopic photography
    • G03B35/18—Stereoscopic photography by simultaneous viewing
    • G03B35/20—Stereoscopic photography by simultaneous viewing using two or more projectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Projection Apparatus (AREA)
  • Led Devices (AREA)
JP2012107959A 2012-05-09 2012-05-09 発光装置、スーパールミネッセントダイオード、およびプロジェクター Withdrawn JP2013235987A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2012107959A JP2013235987A (ja) 2012-05-09 2012-05-09 発光装置、スーパールミネッセントダイオード、およびプロジェクター
US13/886,696 US8955987B2 (en) 2012-05-09 2013-05-03 Light emitting device, super-luminescent diode, and projector
CN2013101636471A CN103390702A (zh) 2012-05-09 2013-05-07 发光装置、超辐射发光二极管及投影仪
US14/591,527 US9172003B2 (en) 2012-05-09 2015-01-07 Light emitting device, super-luminescent diode, and projector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012107959A JP2013235987A (ja) 2012-05-09 2012-05-09 発光装置、スーパールミネッセントダイオード、およびプロジェクター

Publications (2)

Publication Number Publication Date
JP2013235987A true JP2013235987A (ja) 2013-11-21
JP2013235987A5 JP2013235987A5 (https=) 2015-06-25

Family

ID=49534916

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012107959A Withdrawn JP2013235987A (ja) 2012-05-09 2012-05-09 発光装置、スーパールミネッセントダイオード、およびプロジェクター

Country Status (3)

Country Link
US (2) US8955987B2 (https=)
JP (1) JP2013235987A (https=)
CN (1) CN103390702A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016225448A (ja) * 2015-05-29 2016-12-28 セイコーエプソン株式会社 光源装置およびプロジェクター
JP2019192889A (ja) * 2018-04-27 2019-10-31 セイコーエプソン株式会社 発光装置およびプロジェクター

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013051340A (ja) * 2011-08-31 2013-03-14 Seiko Epson Corp 発光装置、スーパールミネッセントダイオード、およびプロジェクター
JP2013235987A (ja) * 2012-05-09 2013-11-21 Seiko Epson Corp 発光装置、スーパールミネッセントダイオード、およびプロジェクター
GB201418506D0 (en) * 2014-10-17 2014-12-03 Univ College Cork Nat Univ Ie A light source
JP6421928B2 (ja) * 2014-12-24 2018-11-14 セイコーエプソン株式会社 発光装置およびプロジェクター
KR102563894B1 (ko) * 2017-02-08 2023-08-10 서울반도체 주식회사 발광 다이오드 및 이를 포함하는 발광 모듈
CN110707189B (zh) 2017-02-08 2023-09-01 首尔半导体株式会社 发光模块
CN112086547A (zh) * 2019-06-13 2020-12-15 光宝光电(常州)有限公司 发光二极管封装结构
US12519288B2 (en) 2020-05-26 2026-01-06 Brolis Sensor Technology, Uab Optoelectronic devices with tunable optical mode and carrier distribution in the waveguides

Citations (4)

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JPH07263752A (ja) * 1994-03-18 1995-10-13 Sony Corp 半導体カラー発光素子
JP2002217456A (ja) * 2001-01-19 2002-08-02 Ngk Insulators Ltd 半導体発光素子
JP2010016172A (ja) * 2008-07-03 2010-01-21 Seiko Epson Corp 発光装置
JP2011155103A (ja) * 2010-01-27 2011-08-11 Panasonic Corp 半導体発光素子

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US6040590A (en) * 1996-12-12 2000-03-21 California Institute Of Technology Semiconductor device with electrostatic control
US6058124A (en) * 1997-11-25 2000-05-02 Xerox Corporation Monolithic independently addressable Red/IR side by side laser
US6661824B2 (en) * 2000-02-18 2003-12-09 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device and method for fabricating the same
US6546035B2 (en) * 2000-02-29 2003-04-08 Matsushita Electric Industrial Co., Ltd. Semiconductor laser diode array and method of fabricating the same
DE10057698A1 (de) * 2000-11-21 2002-06-06 Osram Opto Semiconductors Gmbh Übereinander gestapelte Halbleiter-Diodenlaser
US6803604B2 (en) * 2001-03-13 2004-10-12 Ricoh Company, Ltd. Semiconductor optical modulator, an optical amplifier and an integrated semiconductor light-emitting device
JP2002299750A (ja) 2001-04-04 2002-10-11 Matsushita Electric Ind Co Ltd 半導体レーザ装置およびその製造方法
US6696311B2 (en) * 2001-05-03 2004-02-24 Spectra-Physics Semicond. Lasers, In Increasing the yield of precise wavelength lasers
JP4761426B2 (ja) * 2003-07-25 2011-08-31 三菱電機株式会社 光デバイスおよび半導体レーザ発振器
WO2005122349A1 (en) * 2004-06-07 2005-12-22 Nl Nanosemiconductor Gmbh Electrooptically wavelength-tunable resonant cavity optoelectronic device for high-speed data transfer
JP2010074131A (ja) * 2008-08-21 2010-04-02 Panasonic Corp 半導体発光素子及びその製造方法
JP5153535B2 (ja) 2008-09-16 2013-02-27 キヤノン株式会社 画像投射装置
JP4962743B2 (ja) * 2008-12-19 2012-06-27 セイコーエプソン株式会社 発光装置
JP5196179B2 (ja) * 2009-01-29 2013-05-15 セイコーエプソン株式会社 発光装置
JP5257611B2 (ja) * 2009-03-16 2013-08-07 セイコーエプソン株式会社 発光装置
JP2011077327A (ja) 2009-09-30 2011-04-14 Sumitomo Electric Ind Ltd 半導体レーザ集積素子及びその作製方法
JP5681002B2 (ja) * 2011-03-09 2015-03-04 セイコーエプソン株式会社 発光装置およびプロジェクター
JP5679117B2 (ja) * 2011-03-09 2015-03-04 セイコーエプソン株式会社 発光装置、照射装置、およびプロジェクター
JP5736872B2 (ja) * 2011-03-17 2015-06-17 セイコーエプソン株式会社 発光装置およびプロジェクター
JP2013051340A (ja) * 2011-08-31 2013-03-14 Seiko Epson Corp 発光装置、スーパールミネッセントダイオード、およびプロジェクター
JP5880063B2 (ja) * 2012-01-18 2016-03-08 住友電気工業株式会社 光集積素子の製造方法
JP2013235987A (ja) * 2012-05-09 2013-11-21 Seiko Epson Corp 発光装置、スーパールミネッセントダイオード、およびプロジェクター

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07263752A (ja) * 1994-03-18 1995-10-13 Sony Corp 半導体カラー発光素子
JP2002217456A (ja) * 2001-01-19 2002-08-02 Ngk Insulators Ltd 半導体発光素子
JP2010016172A (ja) * 2008-07-03 2010-01-21 Seiko Epson Corp 発光装置
JP2011155103A (ja) * 2010-01-27 2011-08-11 Panasonic Corp 半導体発光素子

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016225448A (ja) * 2015-05-29 2016-12-28 セイコーエプソン株式会社 光源装置およびプロジェクター
JP2019192889A (ja) * 2018-04-27 2019-10-31 セイコーエプソン株式会社 発光装置およびプロジェクター
JP7206629B2 (ja) 2018-04-27 2023-01-18 セイコーエプソン株式会社 発光装置およびプロジェクター

Also Published As

Publication number Publication date
US20130301012A1 (en) 2013-11-14
US20150131060A1 (en) 2015-05-14
US9172003B2 (en) 2015-10-27
US8955987B2 (en) 2015-02-17
CN103390702A (zh) 2013-11-13

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