JP2013235893A - 半導体装置およびその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 52
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 39
- 238000000034 method Methods 0.000 title claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 28
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 25
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 15
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 13
- 239000011229 interlayer Substances 0.000 claims description 45
- 229910052751 metal Inorganic materials 0.000 claims description 42
- 239000002184 metal Substances 0.000 claims description 42
- 239000010410 layer Substances 0.000 claims description 30
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 7
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 6
- 230000000149 penetrating effect Effects 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 13
- 238000009413 insulation Methods 0.000 abstract description 9
- 239000004411 aluminium Substances 0.000 abstract 1
- 210000000746 body region Anatomy 0.000 description 16
- 239000012535 impurity Substances 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Abstract
【解決手段】MOSFET1は、基板10と、ゲート絶縁膜20と、ゲート電極30と、ゲート絶縁膜20上においてゲート電極30を取り囲むように形成された層間絶縁膜40と、TiおよびNを含み、Alを含まないバッファ膜51と、Ti、AlおよびSiを含むソース電極52とを備えている。MOSFET1には、層間絶縁膜40を貫通し、基板10の主表面10Aを露出させるコンタクトホール80がゲート電極30から離れて形成されている。バッファ膜51は、コンタクトホール80の側壁面80Aに接触するように形成されている。ソース電極52は、バッファ膜51およびコンタクトホール80を形成することにより露出した基板10の主表面10A上に接触するように形成されている。
【選択図】図1
Description
Claims (8)
- 炭化珪素からなる基板と、
前記基板の表面上に形成されたゲート絶縁膜と、
前記ゲート絶縁膜上に形成されたゲート電極と、
前記ゲート絶縁膜上において前記ゲート電極を取り囲むように形成された層間絶縁膜と、
TiおよびNを含み、Alを含まないバッファ膜と、
Ti、AlおよびSiを含むソース電極とを備え、
前記層間絶縁膜を貫通し、前記基板の前記表面を露出させるコンタクトホールが前記ゲート電極から離れて形成されており、
前記バッファ膜は、前記コンタクトホールの側壁面上に接触するように形成されており、
前記ソース電極は、前記バッファ膜、および前記コンタクトホールを形成することにより露出した前記基板の前記表面上に接触するように形成されている、半導体装置。 - 前記バッファ膜は、TiNからなっている、請求項1に記載の半導体装置。
- 前記バッファ膜は、0.025μm以上0.15μm以下の厚みを有している、請求項1または2に記載の半導体装置。
- 炭化珪素からなる基板を準備する工程と、
前記基板の表面上にゲート絶縁膜を形成する工程と、
前記ゲート絶縁膜上にゲート電極を形成する工程と、
前記ゲート絶縁膜上に前記ゲート電極を取り囲む層間絶縁膜を形成する工程と、
前記層間絶縁膜を貫通し、前記基板の前記表面を露出させるコンタクトホールを前記ゲート電極から離れて形成する工程と、
前記コンタクトホールの側壁面上に接触し、TiおよびNを含み、Alを含まないバッファ膜を形成する工程と、
前記バッファ膜、およびコンタクトホールを形成することにより露出した前記基板の前記表面上に接触し、Ti、AlおよびSiを含むソース電極を形成する工程とを備える、半導体装置の製造方法。 - 前記ソース電極を形成する工程は、
Tiを含む第1金属層と、前記第1金属層上に接触しAlを含む第2金属層と、前記第2金属層上に接触しSiを含む第3金属層とが積層された金属膜を形成する工程と、
前記金属膜を加熱することにより前記ソース電極を形成する工程とを含む、請求項4に記載の半導体装置の製造方法。 - 前記ソース電極を形成する工程は、
Ti、AlおよびSiが混合された金属膜を形成する工程と、
前記金属膜を加熱することにより前記ソース電極を形成する工程とを含む、請求項4に記載の半導体装置の製造方法。 - 前記バッファ膜を形成する工程では、TiNからなる前記バッファ膜が形成される、請求項4〜6のいずれか1項に記載の半導体装置の製造方法。
- 前記バッファ膜を形成する工程では、0.025μm以上0.15μm以下の厚みを有する前記バッファ膜が形成される、請求項4〜7のいずれか1項に記載の半導体装置の製造方法。
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JP2012106022A JP5809596B2 (ja) | 2012-05-07 | 2012-05-07 | 半導体装置およびその製造方法 |
EP13788394.8A EP2849231B1 (en) | 2012-05-07 | 2013-03-29 | Semiconductor device and method for manufacturing same |
CN201380015255.9A CN104170093B (zh) | 2012-05-07 | 2013-03-29 | 半导体器件及其制造方法 |
PCT/JP2013/059491 WO2013168484A1 (ja) | 2012-05-07 | 2013-03-29 | 半導体装置およびその製造方法 |
US13/856,950 US9177856B2 (en) | 2012-05-07 | 2013-04-04 | Semiconductor device and method for manufacturing same |
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JP2015115569A (ja) * | 2013-12-16 | 2015-06-22 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
JP2016025285A (ja) * | 2014-07-23 | 2016-02-08 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法および炭化珪素半導体装置 |
JP2021012996A (ja) * | 2019-07-09 | 2021-02-04 | 株式会社豊田中央研究所 | 半導体装置 |
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JP2014038899A (ja) | 2012-08-13 | 2014-02-27 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置およびその製造方法 |
JP5949305B2 (ja) * | 2012-08-13 | 2016-07-06 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
JP6191587B2 (ja) * | 2014-12-08 | 2017-09-06 | トヨタ自動車株式会社 | 半導体装置 |
CN109300947B (zh) * | 2018-09-28 | 2021-09-07 | 京东方科技集团股份有限公司 | 柔性显示基板及其制造方法、显示装置 |
WO2020076710A1 (en) * | 2018-10-08 | 2020-04-16 | Applied Materials, Inc. | Methods and apparatus for n-type metal oxide semiconductor (nmos) metal gate materials using atomic layer deposition (ald) processes with metal based precursors |
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JP2010272766A (ja) * | 2009-05-22 | 2010-12-02 | Sumitomo Electric Ind Ltd | 半導体装置およびその製造方法 |
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JPH07202185A (ja) * | 1993-12-28 | 1995-08-04 | Sharp Corp | 縦型mosトランジスタの製造方法 |
JP4003296B2 (ja) | 1998-06-22 | 2007-11-07 | 株式会社デンソー | 炭化珪素半導体装置及びその製造方法 |
US6391785B1 (en) | 1999-08-24 | 2002-05-21 | Interuniversitair Microelektronica Centrum (Imec) | Method for bottomless deposition of barrier layers in integrated circuit metallization schemes |
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JP2016025285A (ja) * | 2014-07-23 | 2016-02-08 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法および炭化珪素半導体装置 |
JP2021012996A (ja) * | 2019-07-09 | 2021-02-04 | 株式会社豊田中央研究所 | 半導体装置 |
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CN104170093A (zh) | 2014-11-26 |
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US9177856B2 (en) | 2015-11-03 |
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