JP2013225624A5 - - Google Patents
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- Publication number
- JP2013225624A5 JP2013225624A5 JP2012097927A JP2012097927A JP2013225624A5 JP 2013225624 A5 JP2013225624 A5 JP 2013225624A5 JP 2012097927 A JP2012097927 A JP 2012097927A JP 2012097927 A JP2012097927 A JP 2012097927A JP 2013225624 A5 JP2013225624 A5 JP 2013225624A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- plasma etching
- etching method
- gas
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001020 plasma etching Methods 0.000 claims 24
- 238000000034 method Methods 0.000 claims 22
- 239000007789 gas Substances 0.000 claims 14
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims 7
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 7
- 229910001882 dioxygen Inorganic materials 0.000 claims 7
- 229920002120 photoresistant polymer Polymers 0.000 claims 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims 6
- 238000005530 etching Methods 0.000 claims 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- 229910018503 SF6 Inorganic materials 0.000 claims 2
- 229910052804 chromium Inorganic materials 0.000 claims 2
- 229910052735 hafnium Inorganic materials 0.000 claims 2
- 229910052741 iridium Inorganic materials 0.000 claims 2
- 229910052742 iron Inorganic materials 0.000 claims 2
- 229910052748 manganese Inorganic materials 0.000 claims 2
- 230000000873 masking effect Effects 0.000 claims 2
- 229910052750 molybdenum Inorganic materials 0.000 claims 2
- 229910052759 nickel Inorganic materials 0.000 claims 2
- 229910052758 niobium Inorganic materials 0.000 claims 2
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 229910052707 ruthenium Inorganic materials 0.000 claims 2
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims 2
- 229960000909 sulfur hexafluoride Drugs 0.000 claims 2
- 229910052727 yttrium Inorganic materials 0.000 claims 2
- 229910052726 zirconium Inorganic materials 0.000 claims 2
- 229910052786 argon Inorganic materials 0.000 claims 1
- 239000001307 helium Substances 0.000 claims 1
- 229910052734 helium Inorganic materials 0.000 claims 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012097927A JP5815459B2 (ja) | 2012-04-23 | 2012-04-23 | プラズマエッチング方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012097927A JP5815459B2 (ja) | 2012-04-23 | 2012-04-23 | プラズマエッチング方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013225624A JP2013225624A (ja) | 2013-10-31 |
| JP2013225624A5 true JP2013225624A5 (enExample) | 2014-10-30 |
| JP5815459B2 JP5815459B2 (ja) | 2015-11-17 |
Family
ID=49595486
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012097927A Active JP5815459B2 (ja) | 2012-04-23 | 2012-04-23 | プラズマエッチング方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5815459B2 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101794738B1 (ko) | 2014-11-19 | 2017-11-07 | 가부시키가이샤 히다치 하이테크놀로지즈 | 플라즈마 처리 방법 |
-
2012
- 2012-04-23 JP JP2012097927A patent/JP5815459B2/ja active Active
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