JP5815459B2 - プラズマエッチング方法 - Google Patents

プラズマエッチング方法 Download PDF

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Publication number
JP5815459B2
JP5815459B2 JP2012097927A JP2012097927A JP5815459B2 JP 5815459 B2 JP5815459 B2 JP 5815459B2 JP 2012097927 A JP2012097927 A JP 2012097927A JP 2012097927 A JP2012097927 A JP 2012097927A JP 5815459 B2 JP5815459 B2 JP 5815459B2
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film
gas
plasma etching
etching method
mask
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JP2013225624A5 (enExample
JP2013225624A (ja
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直広 山本
直広 山本
島田　剛
剛 島田
荒瀬　高男
高男 荒瀬
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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JP2012097927A 2012-04-23 2012-04-23 プラズマエッチング方法 Active JP5815459B2 (ja)

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JP2012097927A JP5815459B2 (ja) 2012-04-23 2012-04-23 プラズマエッチング方法

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JP2012097927A JP5815459B2 (ja) 2012-04-23 2012-04-23 プラズマエッチング方法

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JP2013225624A JP2013225624A (ja) 2013-10-31
JP2013225624A5 JP2013225624A5 (enExample) 2014-10-30
JP5815459B2 true JP5815459B2 (ja) 2015-11-17

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Publication number Priority date Publication date Assignee Title
KR101794738B1 (ko) 2014-11-19 2017-11-07 가부시키가이샤 히다치 하이테크놀로지즈 플라즈마 처리 방법

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