TWI419228B - 蝕刻之方法與設備 - Google Patents
蝕刻之方法與設備 Download PDFInfo
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- TWI419228B TWI419228B TW099117056A TW99117056A TWI419228B TW I419228 B TWI419228 B TW I419228B TW 099117056 A TW099117056 A TW 099117056A TW 99117056 A TW99117056 A TW 99117056A TW I419228 B TWI419228 B TW I419228B
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- Taiwan
- Prior art keywords
- etching
- gas
- substrate
- reactor
- plasma
- Prior art date
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- 238000000034 method Methods 0.000 title claims 28
- 238000005530 etching Methods 0.000 title claims 16
- 239000007789 gas Substances 0.000 claims 22
- 239000000758 substrate Substances 0.000 claims 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 9
- 239000001301 oxygen Substances 0.000 claims 9
- 229910052760 oxygen Inorganic materials 0.000 claims 9
- 239000000203 mixture Substances 0.000 claims 8
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 5
- 229910052731 fluorine Inorganic materials 0.000 claims 5
- 239000011737 fluorine Substances 0.000 claims 5
- 229910052707 ruthenium Inorganic materials 0.000 claims 5
- 229910052732 germanium Inorganic materials 0.000 claims 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 3
- 239000000463 material Substances 0.000 claims 3
- 229920000642 polymer Polymers 0.000 claims 3
- 238000000151 deposition Methods 0.000 claims 2
- 238000001020 plasma etching Methods 0.000 claims 2
- 238000006116 polymerization reaction Methods 0.000 claims 2
- 229910014263 BrF3 Inorganic materials 0.000 claims 1
- 229910020323 ClF3 Inorganic materials 0.000 claims 1
- 101100441092 Danio rerio crlf3 gene Proteins 0.000 claims 1
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 claims 1
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 claims 1
- 238000000746 purification Methods 0.000 claims 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims 1
- FQFKTKUFHWNTBN-UHFFFAOYSA-N trifluoro-$l^{3}-bromane Chemical compound FBr(F)F FQFKTKUFHWNTBN-UHFFFAOYSA-N 0.000 claims 1
- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 claims 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
- B81C1/00531—Dry etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
- C23F4/04—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00 by physical dissolution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
- H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0111—Bulk micromachining
- B81C2201/0112—Bosch process
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Drying Of Semiconductors (AREA)
Claims (20)
- 一種用以在一電漿蝕刻反應器中蝕刻一基材之方法，包含以下步驟：a)在一蝕刻反應器中沉積一聚合物於一基材上；b)在該蝕刻反應器中使用一氣體混合物蝕刻該基材，該氣體混合物包括一含氟氣體與氧，其中該氣體混合物包括小於20sccm之氧；c)在該蝕刻反應器中使用一沒有混合氧之含氟氣體蝕刻位在該基材上之一含矽層；及d)重複步驟a)、b)及c)，直至達到了蝕刻到該含矽層內之一特徵結構的終點。
- 如申請專利範圍第1項所述之方法，其中步驟b)更包含：在He或HeO2 之至少一者存在下蝕刻該基材。
- 如申請專利範圍第1項所述之方法，其中步驟b)係執行在比步驟c)更低之壓力。
- 如申請專利範圍第1項所述之方法，其中步驟b)係使用比步驟c)更高之偏壓功率來執行。
- 如申請專利範圍第1項所述之方法，其中步驟c)更包 含：從SF6 形成一電漿。
- 如申請專利範圍第1項所述之方法，其中步驟b)更包含：從SF6 與O2 形成一電漿。
- 如申請專利範圍第1項所述之方法，其中步驟b)更包含：從SF6 與O2 之氣體混合物以及He與HeO2 之至少一者形成一電漿；及步驟c)更包含：從SF6 形成一電漿。
- 如申請專利範圍第1項所述之方法，其中步驟b)更包含：在HeO2 存在下蝕刻該基材。
- 如申請專利範圍第1項所述之方法，更包含：使一背側製程氣體從該基材之一邊緣與一基材組件之間流出且流入該電漿蝕刻反應器，其中該背側製程氣體是一氣體，該氣體會影響步驟d)期間藉由和該電漿蝕刻反應器中材料反應的蝕刻或聚合速率。
- 如申請專利範圍第9項所述之方法，其中該背側製程 氣體包括至少氧。
- 如申請專利範圍第1項所述之方法，更包含：在步驟a)與步驟b)之間淨化該蝕刻反應器。
- 如申請專利範圍第11項所述之方法，其中該淨化的步驟更包含：使He或HeO2 之至少一者流入該蝕刻反應器。
- 如申請專利範圍第11項所述之方法，其中該淨化的步驟更包含：在該蝕刻反應器中從He或HeO2 之至少一者形成一電漿。
- 如申請專利範圍第13項所述之方法，其中該淨化的步驟更包含：以RF功率來偏壓該基材。
- 一種用以在一電漿蝕刻反應器中蝕刻一基材之方法，包含以下步驟：a)在一蝕刻反應器中沉積一聚合物於位在一基材上之一含矽層上；b)在維持於一第一壓力之該蝕刻反應器中使用一氣體混合物來等向性蝕刻該聚合物與該含矽層，該 氣體混合物包括一含氟氣體與氧，其中該氣體混合物包括小於20sccm之氧；c)在維持於一第二壓力之該蝕刻反應器中使用一沒有混合氧之含氟氣體來非等向性蝕刻該含矽層，該第二壓力大於該第一壓力，其中該含氟氣體包含選自從SF6 、NF3 、CF4 、CHF3 、ClF3 、BrF3 、IF3 、及其衍生物所構成之群組的氣體混合物；及d)重複步驟a)、b)及c)，直至達到了蝕刻到該含矽層內之一特徵結構的終點。
- 如申請專利範圍第15項所述之方法，更包含：在步驟a)與步驟b)之間以He或HeO2 之至少一者來淨化該蝕刻反應器。
- 如申請專利範圍第16項所述之方法，其中該淨化的步驟更包含：在淨化期間，在該蝕刻反應器中從He或HeO2 之至少一者形成一電漿；及在淨化期間，偏壓該基材。
- 如申請專利範圍第15項所述之方法，更包含：使一背側製程氣體從該基材之一邊緣與一基材組件之間流出且流入該電漿蝕刻反應器，其中該背側製程氣體是一氣體，該氣體會影響步驟d)期間藉由和 該電漿蝕刻反應器中材料反應的蝕刻或聚合速率。
- 如申請專利範圍第18項所述之方法，其中該背側製程氣體包括至少氧。
- 如申請專利範圍第19項所述之方法，其中該背側製程氣體更包含氦，其中氦對氧之重量或質量比例為約50：50至約70：30。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US18360409P | 2009-06-03 | 2009-06-03 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201104746A TW201104746A (en) | 2011-02-01 |
| TWI419228B true TWI419228B (zh) | 2013-12-11 |
Family
ID=43298404
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099117056A TWI419228B (zh) | 2009-06-03 | 2010-05-27 | 蝕刻之方法與設備 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8298959B2 (zh) |
| KR (1) | KR101360876B1 (zh) |
| CN (1) | CN102459704B (zh) |
| TW (1) | TWI419228B (zh) |
| WO (1) | WO2010141257A2 (zh) |
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- 2010-05-24 KR KR1020127000165A patent/KR101360876B1/ko active IP Right Grant
- 2010-05-24 CN CN201080025011.5A patent/CN102459704B/zh not_active Expired - Fee Related
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|---|---|
| KR101360876B1 (ko) | 2014-02-11 |
| US8298959B2 (en) | 2012-10-30 |
| KR20120027459A (ko) | 2012-03-21 |
| TW201104746A (en) | 2011-02-01 |
| CN102459704A (zh) | 2012-05-16 |
| CN102459704B (zh) | 2014-08-20 |
| WO2010141257A3 (en) | 2011-03-03 |
| US20100308014A1 (en) | 2010-12-09 |
| WO2010141257A2 (en) | 2010-12-09 |
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