JP2013211411A5 - - Google Patents
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- Publication number
- JP2013211411A5 JP2013211411A5 JP2012080643A JP2012080643A JP2013211411A5 JP 2013211411 A5 JP2013211411 A5 JP 2013211411A5 JP 2012080643 A JP2012080643 A JP 2012080643A JP 2012080643 A JP2012080643 A JP 2012080643A JP 2013211411 A5 JP2013211411 A5 JP 2013211411A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- memory
- transition metal
- electrode
- ion source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052723 transition metal Inorganic materials 0.000 claims description 25
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 22
- 229910052760 oxygen Inorganic materials 0.000 claims description 22
- 239000001301 oxygen Substances 0.000 claims description 22
- 229910052798 chalcogen Inorganic materials 0.000 claims description 18
- 150000001787 chalcogens Chemical class 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229910052735 hafnium Inorganic materials 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 230000000737 periodic effect Effects 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 230000007547 defect Effects 0.000 claims description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 2
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 description 21
- 230000001133 acceleration Effects 0.000 description 10
- 238000002474 experimental method Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 230000014759 maintenance of location Effects 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 150000003498 tellurium compounds Chemical class 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012080643A JP6050015B2 (ja) | 2012-03-30 | 2012-03-30 | 記憶素子および記憶装置 |
| TW102106320A TWI540776B (zh) | 2012-03-30 | 2013-02-22 | 儲存裝置及儲存單元 |
| KR1020130024345A KR102062403B1 (ko) | 2012-03-30 | 2013-03-07 | 기억 소자 및 기억 장치 |
| CN201310093311.2A CN103367635B (zh) | 2012-03-30 | 2013-03-22 | 存储元件和存储装置 |
| US13/848,996 US9466791B2 (en) | 2012-03-30 | 2013-03-22 | Storage device and storage unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012080643A JP6050015B2 (ja) | 2012-03-30 | 2012-03-30 | 記憶素子および記憶装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013211411A JP2013211411A (ja) | 2013-10-10 |
| JP2013211411A5 true JP2013211411A5 (enExample) | 2015-04-16 |
| JP6050015B2 JP6050015B2 (ja) | 2016-12-21 |
Family
ID=49233652
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012080643A Expired - Fee Related JP6050015B2 (ja) | 2012-03-30 | 2012-03-30 | 記憶素子および記憶装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9466791B2 (enExample) |
| JP (1) | JP6050015B2 (enExample) |
| KR (1) | KR102062403B1 (enExample) |
| CN (1) | CN103367635B (enExample) |
| TW (1) | TWI540776B (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8921821B2 (en) | 2013-01-10 | 2014-12-30 | Micron Technology, Inc. | Memory cells |
| US9252359B2 (en) | 2013-03-03 | 2016-02-02 | Adesto Technologies Corporation | Resistive switching devices having a switching layer and an intermediate electrode layer and methods of formation thereof |
| JP6430306B2 (ja) | 2015-03-19 | 2018-11-28 | 東芝メモリ株式会社 | 不揮発性記憶装置 |
| WO2016158430A1 (ja) * | 2015-03-31 | 2016-10-06 | ソニーセミコンダクタソリューションズ株式会社 | スイッチ素子および記憶装置 |
| US10840442B2 (en) | 2015-05-22 | 2020-11-17 | Crossbar, Inc. | Non-stoichiometric resistive switching memory device and fabrication methods |
| JP6865561B2 (ja) * | 2016-05-20 | 2021-04-28 | クロスバー， インコーポレイテッドＣｒｏｓｓｂａｒ， Ｉｎｃ． | 非確率論抵抗性スイッチングメモリデバイス及び製造方法 |
| KR101858557B1 (ko) * | 2017-11-10 | 2018-05-16 | 주식회사 옥타곤엔지니어링 | 다중 x형 보강철근체가 구비된 철근콘크리트 기둥 |
| JP2019129239A (ja) * | 2018-01-25 | 2019-08-01 | ソニーセミコンダクタソリューションズ株式会社 | 記憶素子および記憶装置 |
| JP2021048258A (ja) * | 2019-09-18 | 2021-03-25 | キオクシア株式会社 | 抵抗変化素子 |
| US11158791B2 (en) * | 2019-11-21 | 2021-10-26 | Applied Materials, Inc. | MIEC and tunnel-based selectors with improved rectification characteristics and tunability |
| KR102674105B1 (ko) | 2019-12-12 | 2024-06-12 | 에스케이하이닉스 주식회사 | 가변 저항 소자를 포함하는 반도체 장치 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4815804B2 (ja) | 2005-01-11 | 2011-11-16 | ソニー株式会社 | 記憶素子及び記憶装置 |
| KR101100427B1 (ko) * | 2005-08-24 | 2011-12-30 | 삼성전자주식회사 | 이온 전도층을 포함하는 불휘발성 반도체 메모리 장치와 그제조 및 동작 방법 |
| JP4539885B2 (ja) * | 2007-08-06 | 2010-09-08 | ソニー株式会社 | 記憶素子および記憶装置 |
| JP4466738B2 (ja) * | 2008-01-09 | 2010-05-26 | ソニー株式会社 | 記憶素子および記憶装置 |
| JP4549401B2 (ja) * | 2008-03-11 | 2010-09-22 | 富士通株式会社 | 抵抗記憶素子の製造方法 |
| KR20100049824A (ko) * | 2008-11-04 | 2010-05-13 | 삼성전자주식회사 | 저항 메모리 장치 및 그 제조 방법. |
| JP2011124511A (ja) * | 2009-12-14 | 2011-06-23 | Sony Corp | 記憶素子および記憶装置 |
| JP5732827B2 (ja) * | 2010-02-09 | 2015-06-10 | ソニー株式会社 | 記憶素子および記憶装置、並びに記憶装置の動作方法 |
-
2012
- 2012-03-30 JP JP2012080643A patent/JP6050015B2/ja not_active Expired - Fee Related
-
2013
- 2013-02-22 TW TW102106320A patent/TWI540776B/zh not_active IP Right Cessation
- 2013-03-07 KR KR1020130024345A patent/KR102062403B1/ko not_active Expired - Fee Related
- 2013-03-22 US US13/848,996 patent/US9466791B2/en not_active Expired - Fee Related
- 2013-03-22 CN CN201310093311.2A patent/CN103367635B/zh not_active Expired - Fee Related
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