KR102062403B1 - 기억 소자 및 기억 장치 - Google Patents

기억 소자 및 기억 장치 Download PDF

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Publication number
KR102062403B1
KR102062403B1 KR1020130024345A KR20130024345A KR102062403B1 KR 102062403 B1 KR102062403 B1 KR 102062403B1 KR 1020130024345 A KR1020130024345 A KR 1020130024345A KR 20130024345 A KR20130024345 A KR 20130024345A KR 102062403 B1 KR102062403 B1 KR 102062403B1
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South Korea
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layer
memory
ion source
resistance
oxygen
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KR1020130024345A
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Korean (ko)
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KR20130111286A (ko
Inventor
히로아키 세이
카즈히로 오바
타케유키 소네
미노루 이카라시
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소니 세미컨덕터 솔루션즈 가부시키가이샤
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Publication of KR20130111286A publication Critical patent/KR20130111286A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0011—RRAM elements whose operation depends upon chemical change comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/82—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays the switching components having a common active material layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
KR1020130024345A 2012-03-30 2013-03-07 기억 소자 및 기억 장치 Expired - Fee Related KR102062403B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2012-080643 2012-03-30
JP2012080643A JP6050015B2 (ja) 2012-03-30 2012-03-30 記憶素子および記憶装置

Publications (2)

Publication Number Publication Date
KR20130111286A KR20130111286A (ko) 2013-10-10
KR102062403B1 true KR102062403B1 (ko) 2020-01-03

Family

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Family Applications (1)

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KR1020130024345A Expired - Fee Related KR102062403B1 (ko) 2012-03-30 2013-03-07 기억 소자 및 기억 장치

Country Status (5)

Country Link
US (1) US9466791B2 (enExample)
JP (1) JP6050015B2 (enExample)
KR (1) KR102062403B1 (enExample)
CN (1) CN103367635B (enExample)
TW (1) TWI540776B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8921821B2 (en) 2013-01-10 2014-12-30 Micron Technology, Inc. Memory cells
US9252359B2 (en) 2013-03-03 2016-02-02 Adesto Technologies Corporation Resistive switching devices having a switching layer and an intermediate electrode layer and methods of formation thereof
JP6430306B2 (ja) 2015-03-19 2018-11-28 東芝メモリ株式会社 不揮発性記憶装置
WO2016158430A1 (ja) * 2015-03-31 2016-10-06 ソニーセミコンダクタソリューションズ株式会社 スイッチ素子および記憶装置
US10840442B2 (en) 2015-05-22 2020-11-17 Crossbar, Inc. Non-stoichiometric resistive switching memory device and fabrication methods
JP6865561B2 (ja) * 2016-05-20 2021-04-28 クロスバー， インコーポレイテッドＣｒｏｓｓｂａｒ， Ｉｎｃ． 非確率論抵抗性スイッチングメモリデバイス及び製造方法
KR101858557B1 (ko) * 2017-11-10 2018-05-16 주식회사 옥타곤엔지니어링 다중 x형 보강철근체가 구비된 철근콘크리트 기둥
JP2019129239A (ja) * 2018-01-25 2019-08-01 ソニーセミコンダクタソリューションズ株式会社 記憶素子および記憶装置
JP2021048258A (ja) * 2019-09-18 2021-03-25 キオクシア株式会社 抵抗変化素子
US11158791B2 (en) * 2019-11-21 2021-10-26 Applied Materials, Inc. MIEC and tunnel-based selectors with improved rectification characteristics and tunability
KR102674105B1 (ko) 2019-12-12 2024-06-12 에스케이하이닉스 주식회사 가변 저항 소자를 포함하는 반도체 장치

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009043758A (ja) 2007-08-06 2009-02-26 Sony Corp 記憶素子および記憶装置
JP2009164467A (ja) * 2008-01-09 2009-07-23 Sony Corp 記憶素子および記憶装置
US20100108972A1 (en) 2008-11-04 2010-05-06 Samsung Electronics Co., Ltd. Non-volatile semiconductor memory devices
US20110194329A1 (en) 2010-02-09 2011-08-11 Sony Corporation Memory component, memory device, and method of operating memory device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4815804B2 (ja) 2005-01-11 2011-11-16 ソニー株式会社 記憶素子及び記憶装置
KR101100427B1 (ko) * 2005-08-24 2011-12-30 삼성전자주식회사 이온 전도층을 포함하는 불휘발성 반도체 메모리 장치와 그제조 및 동작 방법
JP4549401B2 (ja) * 2008-03-11 2010-09-22 富士通株式会社 抵抗記憶素子の製造方法
JP2011124511A (ja) * 2009-12-14 2011-06-23 Sony Corp 記憶素子および記憶装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009043758A (ja) 2007-08-06 2009-02-26 Sony Corp 記憶素子および記憶装置
JP2009164467A (ja) * 2008-01-09 2009-07-23 Sony Corp 記憶素子および記憶装置
US20100108972A1 (en) 2008-11-04 2010-05-06 Samsung Electronics Co., Ltd. Non-volatile semiconductor memory devices
US20110194329A1 (en) 2010-02-09 2011-08-11 Sony Corporation Memory component, memory device, and method of operating memory device

Also Published As

Publication number Publication date
CN103367635B (zh) 2018-02-06
US20130256622A1 (en) 2013-10-03
US9466791B2 (en) 2016-10-11
JP2013211411A (ja) 2013-10-10
TW201347253A (zh) 2013-11-16
CN103367635A (zh) 2013-10-23
JP6050015B2 (ja) 2016-12-21
TWI540776B (zh) 2016-07-01
KR20130111286A (ko) 2013-10-10

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