JP2013206919A - 薄膜トランジスタおよびその製造方法ならびに表示装置 - Google Patents

薄膜トランジスタおよびその製造方法ならびに表示装置 Download PDF

Info

Publication number
JP2013206919A
JP2013206919A JP2012071028A JP2012071028A JP2013206919A JP 2013206919 A JP2013206919 A JP 2013206919A JP 2012071028 A JP2012071028 A JP 2012071028A JP 2012071028 A JP2012071028 A JP 2012071028A JP 2013206919 A JP2013206919 A JP 2013206919A
Authority
JP
Japan
Prior art keywords
film
oxide semiconductor
electrode
drain electrode
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012071028A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013206919A5 (enrdf_load_stackoverflow
Inventor
Yasuhiro Terai
康浩 寺井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2012071028A priority Critical patent/JP2013206919A/ja
Priority to US13/738,540 priority patent/US9054204B2/en
Priority to CN2013100118418A priority patent/CN103219388A/zh
Publication of JP2013206919A publication Critical patent/JP2013206919A/ja
Publication of JP2013206919A5 publication Critical patent/JP2013206919A5/ja
Pending legal-status Critical Current

Links

Images

Landscapes

  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2012071028A 2012-01-20 2012-03-27 薄膜トランジスタおよびその製造方法ならびに表示装置 Pending JP2013206919A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012071028A JP2013206919A (ja) 2012-03-27 2012-03-27 薄膜トランジスタおよびその製造方法ならびに表示装置
US13/738,540 US9054204B2 (en) 2012-01-20 2013-01-10 Thin-film transistor, method of manufacturing the same, display unit, and electronic apparatus
CN2013100118418A CN103219388A (zh) 2012-01-20 2013-01-11 薄膜晶体管、其制造方法、显示单元和电子装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012071028A JP2013206919A (ja) 2012-03-27 2012-03-27 薄膜トランジスタおよびその製造方法ならびに表示装置

Publications (2)

Publication Number Publication Date
JP2013206919A true JP2013206919A (ja) 2013-10-07
JP2013206919A5 JP2013206919A5 (enrdf_load_stackoverflow) 2015-04-02

Family

ID=49525755

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012071028A Pending JP2013206919A (ja) 2012-01-20 2012-03-27 薄膜トランジスタおよびその製造方法ならびに表示装置

Country Status (1)

Country Link
JP (1) JP2013206919A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10002568B2 (en) 2014-05-09 2018-06-19 Joled Inc. Display unit, display unit driving method, and electronic apparatus with deterioration suppression
JP2019216247A (ja) * 2014-03-19 2019-12-19 株式会社半導体エネルギー研究所 トランジスタの作製方法
KR20200115677A (ko) * 2018-03-09 2020-10-07 어플라이드 머티어리얼스, 인코포레이티드 금속 함유 재료들을 위한 고압 어닐링 프로세스
CN111834465A (zh) * 2019-12-09 2020-10-27 云谷（固安）科技有限公司 阵列基板、显示面板及显示装置
JP2023543645A (ja) * 2021-08-16 2023-10-18 深▲セン▼市▲華▼星光▲電▼半▲導▼体▲顕▼示技▲術▼有限公司 基板及び表示パネル

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05109769A (ja) * 1991-10-18 1993-04-30 Fuji Xerox Co Ltd 薄膜トランジスタの製造方法
US20050275038A1 (en) * 2004-06-14 2005-12-15 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
JP2006242987A (ja) * 2005-02-28 2006-09-14 Casio Comput Co Ltd 薄膜トランジスタパネル
JP2011054951A (ja) * 2009-08-07 2011-03-17 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2011076079A (ja) * 2009-09-04 2011-04-14 Semiconductor Energy Lab Co Ltd 表示装置、および電子機器
JP2011243971A (ja) * 2010-04-23 2011-12-01 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05109769A (ja) * 1991-10-18 1993-04-30 Fuji Xerox Co Ltd 薄膜トランジスタの製造方法
US20050275038A1 (en) * 2004-06-14 2005-12-15 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
JP2006242987A (ja) * 2005-02-28 2006-09-14 Casio Comput Co Ltd 薄膜トランジスタパネル
JP2011054951A (ja) * 2009-08-07 2011-03-17 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2011076079A (ja) * 2009-09-04 2011-04-14 Semiconductor Energy Lab Co Ltd 表示装置、および電子機器
JP2011243971A (ja) * 2010-04-23 2011-12-01 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019216247A (ja) * 2014-03-19 2019-12-19 株式会社半導体エネルギー研究所 トランジスタの作製方法
US10002568B2 (en) 2014-05-09 2018-06-19 Joled Inc. Display unit, display unit driving method, and electronic apparatus with deterioration suppression
KR20200115677A (ko) * 2018-03-09 2020-10-07 어플라이드 머티어리얼스, 인코포레이티드 금속 함유 재료들을 위한 고압 어닐링 프로세스
JP2021515412A (ja) * 2018-03-09 2021-06-17 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 金属含有材料の高圧アニーリングプロセス
JP7239598B2 (ja) 2018-03-09 2023-03-14 アプライド マテリアルズ インコーポレイテッド 金属含有材料の高圧アニーリングプロセス
KR102536820B1 (ko) * 2018-03-09 2023-05-24 어플라이드 머티어리얼스, 인코포레이티드 금속 함유 재료들을 위한 고압 어닐링 프로세스
US11881411B2 (en) 2018-03-09 2024-01-23 Applied Materials, Inc. High pressure annealing process for metal containing materials
CN111834465A (zh) * 2019-12-09 2020-10-27 云谷（固安）科技有限公司 阵列基板、显示面板及显示装置
JP2023543645A (ja) * 2021-08-16 2023-10-18 深▲セン▼市▲華▼星光▲電▼半▲導▼体▲顕▼示技▲術▼有限公司 基板及び表示パネル
JP7618573B2 (ja) 2021-08-16 2025-01-21 深▲セン▼市▲華▼星光▲電▼半▲導▼体▲顕▼示技▲術▼有限公司 基板及び表示パネル
US12310108B2 (en) 2021-08-16 2025-05-20 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Base plate and display panel

Similar Documents

Publication Publication Date Title
US9054204B2 (en) Thin-film transistor, method of manufacturing the same, display unit, and electronic apparatus
JP4752925B2 (ja) 薄膜トランジスタおよび表示装置
JP5668917B2 (ja) 薄膜トランジスタおよびその製造方法
CN101800248B (zh) 薄膜晶体管和显示器件
CN101794823B (zh) 薄膜晶体管和显示装置
JP5743064B2 (ja) 薄膜トランジスタおよびその製造方法、並びに表示装置
CN102738405B (zh) 显示装置和电子设备
US20110215328A1 (en) Thin film transistor, method of manufacturing the thin film transistor, and display device
US9312279B2 (en) Thin film transistor array substrate, method of manufacturing the same, and display apparatus including the same
JP2016146501A (ja) 酸化物薄膜トランジスタ及びその製造方法
JP2010205987A (ja) 薄膜トランジスタおよびその製造方法並びに表示装置
JP2010114213A (ja) 薄膜トランジスタ基板および表示装置
JP2014229814A (ja) 薄膜トランジスタ、表示装置および電子機器
JP2012191008A (ja) 表示装置および電子機器
JP2013206919A (ja) 薄膜トランジスタおよびその製造方法ならびに表示装置
JP2012204548A (ja) 表示装置およびその製造方法
US10847655B2 (en) Semiconductor device
JP2018110184A (ja) 半導体装置およびその製造方法
JP2013149827A (ja) 薄膜トランジスタおよびその製造方法、並びに表示装置および電子機器
US9178074B2 (en) Semiconductor device, display unit, and electronic apparatus
WO2024216554A1 (zh) 显示基板及其制备方法、显示装置

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150213

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20150213

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20150327

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160209

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20160210

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20160809