JP2013201211A - 薄膜トランジスタ、薄膜トランジスタの製造方法および電子機器 - Google Patents

薄膜トランジスタ、薄膜トランジスタの製造方法および電子機器 Download PDF

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Publication number
JP2013201211A
JP2013201211A JP2012067662A JP2012067662A JP2013201211A JP 2013201211 A JP2013201211 A JP 2013201211A JP 2012067662 A JP2012067662 A JP 2012067662A JP 2012067662 A JP2012067662 A JP 2012067662A JP 2013201211 A JP2013201211 A JP 2013201211A
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Japan
Prior art keywords
thin film
film transistor
channel layer
film
plane
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Pending
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JP2012067662A
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English (en)
Japanese (ja)
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JP2013201211A5 (enExample
Inventor
Mikihiro Yokozeki
弥樹博 横関
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Sony Corp
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Sony Corp
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Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2012067662A priority Critical patent/JP2013201211A/ja
Priority to TW102105887A priority patent/TWI500165B/zh
Priority to US13/835,405 priority patent/US8957416B2/en
Priority to KR1020130027981A priority patent/KR20130108133A/ko
Priority to CN2013100846434A priority patent/CN103325817A/zh
Publication of JP2013201211A publication Critical patent/JP2013201211A/ja
Publication of JP2013201211A5 publication Critical patent/JP2013201211A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
JP2012067662A 2012-03-23 2012-03-23 薄膜トランジスタ、薄膜トランジスタの製造方法および電子機器 Pending JP2013201211A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2012067662A JP2013201211A (ja) 2012-03-23 2012-03-23 薄膜トランジスタ、薄膜トランジスタの製造方法および電子機器
TW102105887A TWI500165B (zh) 2012-03-23 2013-02-20 薄膜電晶體、其製造方法及電子設備
US13/835,405 US8957416B2 (en) 2012-03-23 2013-03-15 Thin film transistor, manufacturing method of the same and electronic equipment
KR1020130027981A KR20130108133A (ko) 2012-03-23 2013-03-15 박막 트랜지스터, 그 제조 방법 및 전자 기기
CN2013100846434A CN103325817A (zh) 2012-03-23 2013-03-15 薄膜晶体管、薄膜晶体管制造方法及电子设备

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012067662A JP2013201211A (ja) 2012-03-23 2012-03-23 薄膜トランジスタ、薄膜トランジスタの製造方法および電子機器

Publications (2)

Publication Number Publication Date
JP2013201211A true JP2013201211A (ja) 2013-10-03
JP2013201211A5 JP2013201211A5 (enExample) 2015-04-02

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JP2012067662A Pending JP2013201211A (ja) 2012-03-23 2012-03-23 薄膜トランジスタ、薄膜トランジスタの製造方法および電子機器

Country Status (5)

Country Link
US (1) US8957416B2 (enExample)
JP (1) JP2013201211A (enExample)
KR (1) KR20130108133A (enExample)
CN (1) CN103325817A (enExample)
TW (1) TWI500165B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020155626A (ja) * 2019-03-20 2020-09-24 株式会社リコー 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム
WO2023063352A1 (ja) * 2021-10-14 2023-04-20 出光興産株式会社 結晶酸化物薄膜及びその製造方法、並びに薄膜トランジスタ及びその製造方法
WO2024042997A1 (ja) * 2022-08-25 2024-02-29 株式会社ジャパンディスプレイ 酸化物半導体膜、薄膜トランジスタ、および電子機器

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EP2933825B1 (en) * 2014-03-31 2017-07-05 Flosfia Inc. Crystalline multilayer structure and semiconductor device
US10109707B2 (en) * 2014-03-31 2018-10-23 Flosfia Inc. Crystalline multilayer oxide thin films structure in semiconductor device
US9634097B2 (en) * 2014-11-25 2017-04-25 Sandisk Technologies Llc 3D NAND with oxide semiconductor channel
CN104934330A (zh) * 2015-05-08 2015-09-23 京东方科技集团股份有限公司 一种薄膜晶体管及其制备方法、阵列基板和显示面板
TWI611587B (zh) * 2016-08-31 2018-01-11 明新科技大學 氧化物薄膜電晶體
WO2018111247A1 (en) 2016-12-13 2018-06-21 Intel Corporation Passivation dielectrics for oxide semiconductor thin film transistors
KR102304800B1 (ko) * 2019-12-17 2021-09-24 한양대학교 산학협력단 Igo 채널층 기반의 메모리 장치 및 그 제조방법
JP7180492B2 (ja) * 2019-03-26 2022-11-30 Tdk株式会社 誘電体膜および電子部品
US11616057B2 (en) 2019-03-27 2023-03-28 Intel Corporation IC including back-end-of-line (BEOL) transistors with crystalline channel material

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WO2003098699A1 (fr) * 2002-05-22 2003-11-27 Sharp Kabushiki Kaisha Dispositif semiconducteur et afficheur comprenant ce dispositif
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WO2008114588A1 (ja) * 2007-03-20 2008-09-25 Idemitsu Kosan Co., Ltd. スパッタリングターゲット、酸化物半導体膜及び半導体デバイス
WO2009093625A1 (ja) * 2008-01-23 2009-07-30 Idemitsu Kosan Co., Ltd. 電界効果型トランジスタ及びその製造方法、それを用いた表示装置、並びに半導体装置
JP2012023326A (ja) * 2009-09-04 2012-02-02 Sumitomo Chemical Co Ltd 半導体基板、電界効果トランジスタ、集積回路、及び半導体基板の製造方法
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JP2012049516A (ja) * 2010-07-27 2012-03-08 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020155626A (ja) * 2019-03-20 2020-09-24 株式会社リコー 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム
JP7326795B2 (ja) 2019-03-20 2023-08-16 株式会社リコー 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム
WO2023063352A1 (ja) * 2021-10-14 2023-04-20 出光興産株式会社 結晶酸化物薄膜及びその製造方法、並びに薄膜トランジスタ及びその製造方法
WO2024042997A1 (ja) * 2022-08-25 2024-02-29 株式会社ジャパンディスプレイ 酸化物半導体膜、薄膜トランジスタ、および電子機器

Also Published As

Publication number Publication date
CN103325817A (zh) 2013-09-25
TW201340334A (zh) 2013-10-01
KR20130108133A (ko) 2013-10-02
US20130248852A1 (en) 2013-09-26
TWI500165B (zh) 2015-09-11
US8957416B2 (en) 2015-02-17

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