TWI500165B - 薄膜電晶體、其製造方法及電子設備 - Google Patents

薄膜電晶體、其製造方法及電子設備 Download PDF

Info

Publication number
TWI500165B
TWI500165B TW102105887A TW102105887A TWI500165B TW I500165 B TWI500165 B TW I500165B TW 102105887 A TW102105887 A TW 102105887A TW 102105887 A TW102105887 A TW 102105887A TW I500165 B TWI500165 B TW I500165B
Authority
TW
Taiwan
Prior art keywords
channel layer
thin film
film transistor
film
oxide semiconductor
Prior art date
Application number
TW102105887A
Other languages
English (en)
Chinese (zh)
Other versions
TW201340334A (zh
Inventor
橫關彌樹博
Original Assignee
杰奧萊德股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 杰奧萊德股份有限公司 filed Critical 杰奧萊德股份有限公司
Publication of TW201340334A publication Critical patent/TW201340334A/zh
Application granted granted Critical
Publication of TWI500165B publication Critical patent/TWI500165B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth

Landscapes

  • Thin Film Transistor (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
TW102105887A 2012-03-23 2013-02-20 薄膜電晶體、其製造方法及電子設備 TWI500165B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012067662A JP2013201211A (ja) 2012-03-23 2012-03-23 薄膜トランジスタ、薄膜トランジスタの製造方法および電子機器

Publications (2)

Publication Number Publication Date
TW201340334A TW201340334A (zh) 2013-10-01
TWI500165B true TWI500165B (zh) 2015-09-11

Family

ID=49194473

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102105887A TWI500165B (zh) 2012-03-23 2013-02-20 薄膜電晶體、其製造方法及電子設備

Country Status (5)

Country Link
US (1) US8957416B2 (enExample)
JP (1) JP2013201211A (enExample)
KR (1) KR20130108133A (enExample)
CN (1) CN103325817A (enExample)
TW (1) TWI500165B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2933825B1 (en) 2014-03-31 2017-07-05 Flosfia Inc. Crystalline multilayer structure and semiconductor device
US10109707B2 (en) * 2014-03-31 2018-10-23 Flosfia Inc. Crystalline multilayer oxide thin films structure in semiconductor device
US9634097B2 (en) 2014-11-25 2017-04-25 Sandisk Technologies Llc 3D NAND with oxide semiconductor channel
CN104934330A (zh) * 2015-05-08 2015-09-23 京东方科技集团股份有限公司 一种薄膜晶体管及其制备方法、阵列基板和显示面板
TWI611587B (zh) * 2016-08-31 2018-01-11 明新科技大學 氧化物薄膜電晶體
WO2018111247A1 (en) * 2016-12-13 2018-06-21 Intel Corporation Passivation dielectrics for oxide semiconductor thin film transistors
KR102304800B1 (ko) * 2019-12-17 2021-09-24 한양대학교 산학협력단 Igo 채널층 기반의 메모리 장치 및 그 제조방법
JP7326795B2 (ja) * 2019-03-20 2023-08-16 株式会社リコー 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム
JP7180492B2 (ja) * 2019-03-26 2022-11-30 Tdk株式会社 誘電体膜および電子部品
US11616057B2 (en) 2019-03-27 2023-03-28 Intel Corporation IC including back-end-of-line (BEOL) transistors with crystalline channel material
US20250151354A1 (en) * 2021-10-14 2025-05-08 Idemitsu Kosan Co., Ltd. Crystalline oxide thin film, method for producing same, thin film transistor, and method for producing same
JPWO2024042997A1 (enExample) * 2022-08-25 2024-02-29
WO2026047505A1 (ja) * 2024-08-30 2026-03-05 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090194767A1 (en) * 2008-02-01 2009-08-06 Hiroshi Miura Conductive oxide-deposited substrate and method for producing the same, and mis laminated structure and method for producing the same
TW200941729A (en) * 2008-01-23 2009-10-01 Idemitsu Kosan Co Field-effect transistor, method for manufacturing field-effect transistor, display device using field-effect transistor, and semiconductor device

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2003236143A1 (en) * 2002-05-22 2003-12-02 Masashi Kawasaki Semiconductor device and display comprising same
WO2007058248A1 (ja) * 2005-11-18 2007-05-24 Idemitsu Kosan Co., Ltd. 半導体薄膜、及びその製造方法、並びに薄膜トランジスタ
CN101680081B (zh) * 2007-03-20 2012-10-31 出光兴产株式会社 溅射靶、氧化物半导体膜及半导体器件
JP5242083B2 (ja) 2007-06-13 2013-07-24 出光興産株式会社 結晶酸化物半導体、及びそれを用いてなる薄膜トランジスタ
CN102498542B (zh) * 2009-09-04 2016-05-11 住友化学株式会社 半导体基板、场效应晶体管、集成电路和半导体基板的制造方法
JP2011066070A (ja) * 2009-09-15 2011-03-31 Idemitsu Kosan Co Ltd 多結晶薄膜、その成膜方法、及び薄膜トランジスタ
KR101470303B1 (ko) 2009-12-08 2014-12-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP2011159697A (ja) * 2010-01-29 2011-08-18 Dainippon Printing Co Ltd 薄膜トランジスタ搭載基板、その製造方法及び画像表示装置
KR101881729B1 (ko) * 2010-04-16 2018-07-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 성막 방법 및 반도체 장치를 제작하기 위한 방법
JP5836680B2 (ja) * 2010-07-27 2015-12-24 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
JP2012169344A (ja) * 2011-02-10 2012-09-06 Sony Corp 薄膜トランジスタならびに表示装置および電子機器

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200941729A (en) * 2008-01-23 2009-10-01 Idemitsu Kosan Co Field-effect transistor, method for manufacturing field-effect transistor, display device using field-effect transistor, and semiconductor device
US20090194767A1 (en) * 2008-02-01 2009-08-06 Hiroshi Miura Conductive oxide-deposited substrate and method for producing the same, and mis laminated structure and method for producing the same

Also Published As

Publication number Publication date
US20130248852A1 (en) 2013-09-26
JP2013201211A (ja) 2013-10-03
KR20130108133A (ko) 2013-10-02
CN103325817A (zh) 2013-09-25
US8957416B2 (en) 2015-02-17
TW201340334A (zh) 2013-10-01

Similar Documents

Publication Publication Date Title
TWI500165B (zh) 薄膜電晶體、其製造方法及電子設備
Shin et al. The mobility enhancement of indium gallium zinc oxide transistors via low-temperature crystallization using a tantalum catalytic layer
CN101632179B (zh) 半导体元件及其制造方法、以及包括该半导体元件的电子器件
US9087907B2 (en) Thin film transistor and method of manufacturing the same
KR102518392B1 (ko) 박막트랜지스터 어레이 기판
US20150357480A1 (en) Stable metal-oxide thin film transistor and method of making
US20140252350A1 (en) Thin film transistor and method of manufacturing the same
CN102969362B (zh) 高稳定性非晶态金属氧化物tft器件
US9806097B2 (en) Metal oxide semiconductor thin film, thin film transistor, and their fabricating methods, and display apparatus
US20120012835A1 (en) Metal Oxide Semiconductor Thin Film Transistors
CN104218096B (zh) 钙钛矿结构的无机金属氧化物半导体薄膜及其金属氧化物薄膜晶体管
JP2007150158A (ja) トランジスタおよびその製造方法
US9070597B2 (en) Thin film transistor, display substrate and method of manufacturing a thin film transistor
JP2011029238A (ja) 結晶性ホモロガス化合物層を含む積層体の製造方法及び電界効果型トランジスタ
US20150187574A1 (en) IGZO with Intra-Layer Variations and Methods for Forming the Same
CN105576017A (zh) 一种基于氧化锌薄膜的薄膜晶体管
WO2015032135A1 (zh) 阻挡层及其制备方法、薄膜晶体管、阵列基板
KR101833951B1 (ko) 박막 트랜지스터 및 그 제조 방법
CN103545377A (zh) 一种氧化物薄膜晶体管及其制造方法
KR102090289B1 (ko) 산화물 스퍼터링 타겟, 이를 이용한 박막 트랜지스터 및 그 제조 방법
US20140363932A1 (en) Zinc target including fluorine, method of fabricating zinc nitride thin film by using the same, and method of fabricating thin film transistor by using the same
CN104992982A (zh) 一种具有超晶格结构的薄膜晶体管
KR20180025882A (ko) 박막 트랜지스터 및 그 제조 방법
EP3405980B1 (en) Oxide semiconductor material, thin-film transistor, and fabrication method thereof
TWI915957B (zh) 半導體裝置